Available PVD targets in CMi

Evaporation

  • EB : E-Beam evaporation.
  • RH : Resistance Heated Evaporation
    • RH1 : Materials supplied by CMi.
    • RH2 : Materials that must be ordered through the CMi user interface.
    • RH3 : Authorized materials, but not supplied by CMi.
    • RH4 : Materials that can be supplied by CMi in small quantities.
ElementLAB 600 HEVA 760VACO 250VACOTECEVA451 at IPHYSEbeam 2000 at IPHYS
AgEB
[99.99%]		EB
[99.99%] 		RH4
[99.99%] 		EB
[99.99%]		EB
[99.99%]
AgClRH3
Ag2O
Al EB
[99.999%] 		EB
[99.999%] 		RH1
[99.999%] 		EB
[99.99%]		EB
[99.99%]
Al:Cu:Si 4%,1% (95:4:1)
Al2O3 EB
[99.99%]
AlN
AlSc 6.4 at%
(Sc 10.2 wt%)
AlSc 17.5 at%
(Sc 26.1 wt%)
AlSc 40.0 at%
(Sc 52.6 wt%)
AlScN
Al:Si 0.5%
Al:Si 0.8%
Al:Si 1.0%
Al:Si 1.2%
Al:Si 1.5%
Al:Si 2.0%
Al:Si 4.0%
Au EB
[99.99%] 		EB
[99.99%] 		RH4EB
[99.999%]		EB
[99.999%]
AuGe12%RH3
AZO
ZnO:Al2O3 98:2 (wt%)
BiRH4
[99.999%]
CaRH3
CoEB
[99.95%]
CrEB
[99.6%] 		EB
[99.6%] 		RH1
[99.6%]		EB
[99.994-99.998%]		EB
[99.994-99.998%]
CuEB
[99.99%] 		RH1
[99.99%] 		EB
[99.999%]
Fe
Fe2O3
Fe:Co:B 60:20:20 (at%)
GaRH4
[99.99%]
GeEB
[99.999%] 		EB
[99.999%]
GeO2
Ge:Sn
80:20 (at%)
Ge:Sn
84:16 (at%)
Ge:Sn
90:10 (at%)
Ge:Sn
94:6 (at%)
Hf
HfOx
HfO2:Gd
96.5:3.5 (%at)
HZO
IGZO
InGaZnOx
InEB
[99.999%]
Ir
IrOx
ITO 90:10 wt%
In2O3 – SnO2 		EB
[99.99%] 		EB
[99.99%]
ITZO
In,Zn,Sn
IWO
In,W
IZO
In,Zn
LNO
LaNiO3
La2O3 EB
[99.99%]
LiFRH3
MgRH3RH3
MgF2 EB
[99.99%]
MgO EB
[99.5%]
MoEB
[99.95%]
MoOx
MoO3RH3
Mo:Si 75:25 (at%)
Nb EB
[99.9%] (Nb + Ta)
Ta = 530ppm
NbO
Nb:Ti
50:50 (at%)
Nb:Ti
85:15 (at%)
NbTiN
NiEB
[99.95%] 		EB
[99.95%] 		EB
[99.995%]		EB
[99.995%]
NiCr 19%
Ni:Cu 50:50 (at%)
NiCuOx
NiFe 19%EB
[99.9%]
NiO
NiO/Li 91/9 (%at)
NiO/Li 85/15 (%at)
NiO/Li 75/25 (%at)
PbRH3
PbSnRH3
PBZT
Pb(Zrx,Ti1-x)O3
(Ba 10.0 wt%)
PdEB
[99.95%] 		EB
[99.95%]		EB
[99.95%]
Polyethylene
C2H4 		RH3
Polypropylene
C3H6 		RH3
Polystyrene_ butadiene
(C8H8)n
(C4H6)m 		RH3
PMMA
Poly(methyl methacrylate)
[CH2C(CH3
(CO2CH3)]n 		RH3
PtEB
[99.95%] 		EB
[99.95%] 		EB
[99.99%]		EB
[99.99%]
Ru
RuO2
Sb
SeRH4
[99.999%]
SiEB
[99.999%]
SiO
SiO2EB
[99.99%]
Sn RH4
[99.999%]
TaEB
[99.9%]
TaN
TaO
Ta2O5
TiEB
[99.9%] 		EB
[99.9%]		EB
[99.995%]		EB
[99.995%]
TiC
TiO
TiO2
TiO2:Cr
87:13 (%at)
TiO2:Cr
74:26 (%at)
Ti2O3 EB
[99.5%]
Ti3O5 EB
[99.5%]
TiN
V2O3
V2O5
V2O5:Ge
96:4 (%at)
V2O5:Ge
94.5:5.5 (%at)
V2O5:Ge
94:6 (%at)
V2O5:Ge
93.5:6.5 (%at)
V2O5:Ge
92.5:7.5 (%at)
W
WOx
WSi2
W:Ti 10% (wt%)
YEB
[99.9%]
Y2O3 EB
[99.99%]
Zn
ZrOx
ZrO2 EB
[99.3%]
ZTO
Zn,Sn

Sputtering / Laser ablation

  • SP : Sputtering
    • SP-DC : DC
    • SP-RF : RF
    • SP-PDC : Pulsed DC
  • RSP : Reactive Sputtering
  • LA : Laser Ablation
    • LA1 : PLD Chamber n°1
    • LA2 : PLD Chamber n°2
ElementSPIDER 600DP 650PLDKenositec at IPHYS OERLIKON CLUSTERLINE
at CSEM 		UNIVEX
at PV-LAB
AgSP-DC
[99.99%]
AgCl
Ag2ORSP
Ag [99.99%]
AlSP-DC
or
SP-PDC
[99.9995%]		SP-DC
[99.9995%]
Al:Cu:Si 4%,1%
(95:4:1)
Al2O3 SP-RF
[99.99%]
AlNRSP
Al [99.9995%] 		SP
AlSc 6.4 at%
(Sc 10.2 wt%) 		SP-PDC
[99.9%]
AlSc 17.5 at%
(Sc 26.1 wt%) 		SP-PDC
[99.99%]
AlSc 40.0 at%
(Sc 52.6 wt%) 		SP-PDC
[99.9%]
AlScNRSP
AlSc 6.4 at% [99.9%]
AlSc 17.5 at% [99.99%]
AlSc 40.0 at% [99.9%]
Al:Si 0.5%
Al:Si 0.8%
Al:Si 1.0%SP-DC
[99.9995%] 		SP-DC
[99.999%]
Al:Si 1.2%
Al:Si 1.5%
Al:Si 2.0%SP-DC
[99.9995%]
(Si 1.95 wt% photometry)
Al:Si 4.0%SP-DC
[99.9995%]
(Si 3.82 wt% photometry)
AuSP-DC
[99.99%]
AuGe12%
AZO
ZnO:Al2O3 98:2 (wt%) 		SP-RF
[99.99%]		SP
(often installed)
BiSP-DC
Ca
Co
CrSP-DC
[99.95%]
CuSP-DC
[99.995%]
FeSP-RF
[99.99%]
Fe2O3SP-RF
[99.5%]
Fe:Co:B 60:20:20 (at%)SP-RF
[99.9%]
Ga
GeSp-DC
[99.999%]
GeO2SP-RF
[99.99%]
Ge:Sn
80:20 (at%) 		SP-DC
[99.99%]
Ge:Sn
84:16 (at%) 		SP-DC
[99.99%]
Ge:Sn
90:10 (at%) 		SP-DC
[99.99%]
Ge:Sn
94:6 (at%) 		SP-DC
[99.99%]
Hf
HfOx
HfO2:Gd
96.5:3.5 (%at) 		LA1
HZOLA1
IGZO
InGaZnOx 		SP-RF
[99.99%]		SP
In
IrSP-DC
99.9%]
IrOxRSP
Ir [99.9%]
ITO 90:10 wt%
In2O3 – SnO2 		SP-RF
[99.99%] 		SP
(often installed)
ITZO
In,Zn,Sn 		SP
IWO
In,W 		SP
(often installed)
IZO
In,Zn 		SP SP
LNO
LaNiO3		LA2
La2O3
LiF
Mg
MgF2 SP
MgO SP-RF
[99.95%]
MoSP-DC
[99.99%] 		SP-DC
[99.95%]
MoO3
MoOxSP
Mo:Si 75:25 (at%)SP-DC
[99.9%]
NbSP-DC
[99.9%]
Ta = 334ppm
NbOSP
Nb:Ti
50:50 (at%) 		SP-DC
[99.9%]
Nb:Ti
85:15 (at%)		SP-DC
[99.9%]
NbTiNRSP
Nb:Ti 50:50 [99.9%]
Nb:Ti 85:15 [99.9%]
NiSP-RF
[99.95%]
NiCr 19%
Ni:Cu 50:50 (at%)SP-RF
[99.95%]
NiCuOxRSP
Ni:Cu 50:50 at% [99.95%]
NiFe 19%
NiORSP
Ni [99.95%]
SP-RF
[99.9%]
SP
NiO/Li 91/9 (%at)LA2
NiO/Li 85/15 (%at) LA2
NiO/Li 75/25 (%at) LA2
Pb
PbSn
PBZT
Pb(Zrx,Ti1-x)O3
(Ba 10.0 wt%)		LA2
PdSP-DC
[99.95%]
Polyethylene
C2H4
Polypropylene
C3H6
Polystyrene_ butadiene
(C8H8)n
(C4H6)m
PMMA
Poly(methyl methacrylate)
[CH2C(CH3
(CO2CH3)]n
PtSP-DC
[99.95%] 		SP-DC
[99.99%]
RuSP-DC
[99.95%]
RuO2SP-RF
Ru [99.95%]
SbSP-DC
[99.999%]
Se
SiSP-DC
Boron doped
5-30 mΩ.cm
2.1019 – 1018 at/cm3
[99.9999%] 		SP-DC
Boron doped
5-30 mΩ.cm
[99.9999%]
SiNSP
SiOSP
SiO2SP-RF
[99.99%] 		SP
Sn SP-DC
[99.998%]
TaSP-DC
[99.98%] 		SP-DC
[99.99%]
TaNSP-RF
[99.95%]
TaOSP
Ta2O5SP-RF
[99.99%] 		SP
TiSP-DC
[99.995%] 		SP-DC
[99.995%]		SP
TiCSP-RF
[99.5%]
TiOSP
TiO2RSP
Ti [99.995%]
SP-RF
[99.5%] 		SP-RF
[99.99%]		SP
TiO2:Cr
87:13 (%at)		LA2
[99.9%]
(no process available!)
TiO2:Cr
74:26
(%at)		LA2
[99.9%]
(no process available!)
Ti2O3
Ti3O5
TiNRSP
Ti [99.995%] 		SP-RF
[99.5%]		LA1
[99.5%]
(no process available!)
V2O3LA1
V2O5SP-RF
[99.9%] 		LA1
V2O5:Ge 96:4 (%at)LA1
[99.9%]
V2O5:Ge 94.5:5.5 (%at) LA1
[99.9%]
V2O5:Ge 94:6 (%at) LA1
[99.9%]
V2O5:Ge 93.5:6.5 (%at) LA1
[99.9%]
V2O5:Ge 92.5:7.5 (%at) LA1
[99.9%]
WSP-DC
[99.95%]		SP-DC
[99.95%]
WOxRSP
W [99.95%]
WSi2
W:Ti 10% (wt%)SP-DC
[99.99%] 		SP-DC
[99.99%]
Y
Y2O3
ZnSP-DC
[99.99%]
Zr
ZrOx
ZrO2 SP
ZTO
Zn,Sn 		SP