AFM
FIB / SEM / EDX / ProSEM
- Equipement
- – 100, 150 mm wafers and piece parts
– High resolution SEM imaging
– Ion beam patterning (> 100nm)
– Up to 30 kV SEM and FIB acceleration voltages
– Cross-sections, TEM lamellas, Omniprobe manipulator
– Location: Zone 8 - Documentation
- – Manual
- Responsibles
- Z. Benes
J. Pernollet
- Equipement
- – 100, 150 mm wafers, cleaved samples and piece parts
– High resolution SEM imaging (~5nm)
– From 0.5 to 10 kV acceleration voltage
– Location: Zone 1 - Documentation
- – Manual
- Responsibles
- Z. Benes
J. Pernollet
- Equipement
- – 100 wafers, cleaved samples and piece parts
– High resolution SEM imaging (<1nm)
– From 0.02 to 30 kV acceleration voltage
– SE, In-Lens and Energy Selective Backscatter detectors
– EDX Analysis
– Location: Zone 15 - Documentation
- – Manual
- Responsibles
- Z. Benes
J. Pernollet
- Equipement
- – Energy Dispersive X-ray Spectroscopy
– Oxford Instruments X-MAX silicon drift type detector 50mm2
– Resolution 127eV FWHM
– Detection limit about 1 atomic %
– AZtec and INCA software
– Location: Zone 15 - Documentation
- – Manual
- Responsibles
- Z. Benes
J. Pernollet
- Equipement
- – GenISysSEM image analysis software
– CD and line-edge roughness measurements
– Automatic pattern edge detection
– Multiple features in a single image analysis
– Batch processing of multiple images
– Location: BM1132 - Documentation
- – Manual
- Responsibles
- Z. Benes
J. Pernollet
XPS / AES available at MHMC
Please visit “Surface characterization” MHMC page for more details.
Please visit “Surface characterization” MHMC page for more details.
Mechanical profilometers
- Equipement
- – Measurement range in Z : up to 1mm
– Step height repeatability: 5A
– 3D stress and 3D mapping
– Location: Zone 4 - Documentation
- – Manual
– Tutorial for database - Responsibles
- D. Bouvet
G. Clerc
Optical measurement
- Equipement
- – Contact Angle and Surface Free Energy (SFE) measurements
– Multi-dosing system (4 automatic and 1 manual syringes)
– Motor-controlled y– axis for multi-drop experiments
– Droplet volume < 5 µl
– Location: Zone 16 - Documentation
- – Equipment Description
- Responsibles
- J. Dorsaz
- Equipement
- – Phase shifting interferometry (PSI) for roughness and small steps (< 160 nm)
– Vertical scanning interferometry (VSI) for rough surface and steps up to 1 mm high
– PSI vertial resolution : 0.3 nm
– VSI vertical resolution : 3 nm
– Spacial resolution : 1.0 µm
– Location: Zone 15 - Documentation
- – Manual
- Responsibles
- C. Hibert
G. Clerc
- Equipement
- – Measurement range : 10nm up to 20µm
– Spatial resolution : 10µm and wider (spot size depends on objective magnification 4x: 62.5µm, 10x: 25µm, 40x: 6.25µm)
– Mono, bi-layers and tri-layer stack measurements
– Location: Zone 19 - Documentation
- – Manual
- Responsibles
- J. Dorsaz
G.A. Racine
G. Clerc
- Equipement
- – Thickness measurement
– Thickness range : 1nm to 40µm
– Thickness and n and k measurement
– Thickness range : 50nm and up
– Wavelength range : 200nm – 1100nm
– Spot size : 1.5mm
– Measurement of Single layers
– Measurement of Multilayer stacks
– Location: Zone 15 - Documentation
- – Manual
- Responsibles
- J. Dorsaz
G.A. Racine
- Equipement
- – Measurement range : 10nm up to 40µm
– Spatial resolution : 33µm (500um aperture)
– Mono, bi-layers and tri-layer stack measurements
– Location: Zone 3 - Documentation
- – Manual
- Responsibles
- N. Piacentini
J. Dorsaz
G.A. Racine
R. Juttin
- Equipement
- – Location: Zone 16
- Documentation
- – Brochure
- Responsibles
- Junqiu Liu
Electrical measurement
- Equipement
- – DC electrical measurements with up to 4 probes
– Tungsten tips with 12um radius
– Stage travel with fine and coarse mode, up to 200mm x 200mm
– Configurations for resistivity, diode, FET and Bipolar transistors
– Location: Zone 11 - Documentation
- – Equipment Description
– User Manual - Responsibles
- G.A. Racine
Optical microscopy
- Equipements
- – List of microscopes at CMi
- Documentation
- – Manual Leica D800