– Argon ions 350mm broad-beam – Large range energy capability (50V to 800V) – High uniformity and high collimation – Pure physical sputtering of any material – Low temperature substrate fixture (<90°C) – Secondary Ions Mass Spectroscopy – Location: Zone 11
– ICP plasma etcher 100mm wafers – Fluorine chemistry – Electrostatic clamping – Non microelectronic compatible equipment – Si bulk and thin films etching – Deep Si etching (Bosch process) – Notch free SOI processing – Location: Zone 2
– DRM (Dipole Ring Magnet) – 100mm – RIE with magnetic field assistance – Fluorine chemistry – Electrostatic clamping – Microelectronic compatible equipment – SiO2 and Si3N4 thin films etching – Location: Zone 2
– 8 inches wafers to piece parts – HF chemistry – SiO2 etch – Controllable etch rate (nm/min to um/min) – Dry process without sticking issues – Location: Zone 2
– Post CMP Cleaning of 4”, 6” and 8” wafers – Metal contaminated wafers can be processed with dedicated brushes, please contact staff – Location: Zone 18/19
– Silicon, III/V materials and glass types grinding – Single wafers, stacked wafers and chips (from a few mm2 to full 8″ wafers) – Frame mounting on UV-tape – Disco DCS1440 atomizing cleaning – Roughness < 100nm, TTV ~ 1micron – Location: Zone 11
– 100, 150 mm wafers and piece parts – 100 mm chuck to protect wafer back side – KOH chemistry 40%/60°C – Silicon anisotropic etch – Location: Zone 18/19
