Precious material billing

Details of the methods used for precious material billing:

EVA 600 : Au / Ag

Thermal evaporation

  • First, users have to order a tube “Gold grains – 6 grammes” or “Silver grains – 4 grammes” with the help of the user interface
  • Unit price of the tube is fixed each month and is available with the user interface (Rates / Consumables)

A few numbers:

  • Average weight of a gold grain = 0.15g
  • Average gold consumption in EVA 600 : 0.015g/nm
  • 1 gold grain => 80 Å – 120 Å
  • Note : Don’t forget the gold consumption before opening the shutter(preevaporation)

E-beam evaporation

  • Unit for billing : nm
  • Deposition parameters for billing :
    • td = thickness measured by the Crystal
    • tf = fixed thickness for pre-evaporation
      • Au = 10 nm
      • Ag = 100 nm
  • Billed quantity = td + tf
  • Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)

EVA 760 : Au / Ag / Pt / Pd

E-Beam evaporation

  • Unit for billing : nm
  • Deposition parameters for billing :
    • td = thickness measured by the Crystal
    • tf = fixed thickness for pre-evaporation
Materials / Categories 450 mm 350 mm 250 mm
Au 5 nm 8 nm 17 nm
Ag To be defined To be defined To be defined
Pt 42 nm 70 nm 140 nm
  • Billed quantity = td + tf
  • Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)

LAB 600 H : Au / Ag / Pt / Pd

E-Beam evaporation

  • Unit for billing : nm
  • Deposition parameters for billing :
    • td = thickness measured by the Crystal
    • tf = fixed thickness for pre-evaporation
Materials / Categories HRN LRN
Au 3 nm 8 nm
Ag 40 nm 100 nm
Pt 18 nm 45 nm
Pd 24 nm 60 nm
  • Billed quantity = td + tf
  • Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)

SPIDER 600 : Pt / Ru

Sputtering

  • Unit for billing :W.h
  • Deposition parameters for billing :
    • E1 = initial consumption [W.h]
    • E2 = final consumption [W.h]
  • Billed quantity = E2 – E1
  • Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)

 

  • Standard recipe for Pt :
    • Target cleaning : 1mn, 1000W => E ~ 17 W.h
    • Consumption at 1000W for a deposition rate of about 260 nm/mn => E ~ 0.064 W.h/nm (per wafer)

 

  • Standard recipe for Ru :
    • Target cleaning : 1mn, 1000W => E ~ 17 W.h
    • Consumption at 1000W for a deposition rate of about 230 nm/mn => E ~ 0.072 W.h/nm (per wafer)

BAS 450 : Au / Pt / Pd

Sputtering

  • Unit for billing :W.h
  • Deposition parameters for billing :
    • Np1 = number of pulses to clean the target before deposition
    • Np2 = number of pulses for deposition
    • R = range : order of the frequency divider
  • Billed quantity =(Np1 + Np2) x 2R / 100
  • Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)

 

  • Standard recipe for Au :
    • Target cleaning : 1000 pulses, range 1 => E = 20 W.h
    • E ~ 0.32 W.h/nm (per run, up to 9 wafers)

 

  • Standard recipe for Pt :
    • Target cleaning : 1000 pulses, range 1 => E = 20 W.h
    • E ~ 0.68 W.h/nm (per run, up to 9 wafers)

 

  • Standard recipe for Pd :
    • Target cleaning : 1000 pulses, range 1 => E = 20 W.h
    • E ~ 0.50 W.h/nm (per run, up to 9 wafers)

DP 650 : Au / Ag / Pt / Pd

Sputtering

  • Unit for billing :W.h
  • Deposition parameters for billing :
    • E1 = initial consumption [W.h]
    • E2 = final consumption [W.h]
  • Billed quantity = E2 – E1
  • Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)

 

  • Standard recipes for Au :
    • Target cleaning : 20s, 200W => E ~ 1 W.h
    • Z=30mm. Consumption at 200W for a deposition rate of about 115 nm/mn => E ~ 0.029 W.h/nm (per wafer)
    • Z=80mm. Consumption at 50W for a deposition rate of about 12 nm/mn => E ~ 0.068 W.h/nm (per wafer)
    • Z=80mm. Consumption at 250W for a deposition rate of about 74 nm/mn => E ~ 0.056 W.h/nm (per wafer)

 

  • Standard recipes for Ag :
    • Target cleaning : 30s, 200W => E ~ 1.7 W.h
    • Z=30mm. Consumption at 200W for a deposition rate of about 171 nm/mn => E ~ 0.019 W.h/nm (per wafer)
    • Z=80mm. Consumption at 250W for a deposition rate of about 104 nm/mn => E ~ 0.040 W.h/nm (per wafer)

 

  • Standard recipes for Pt :
    • Target cleaning : 20s, 200W => E ~ 1 W.h
    • Z=30mm. Consumption at 200W for a deposition rate of about 65 nm/mn => E ~ 0.051 W.h/nm (per wafer)
    • Z=80mm. Consumption at 250W for a deposition rate of about 40 nm/mn => E ~ 0.104 W.h/nm (per wafer)

 

  • Standard recipes for Pd :
    • Target cleaning : 20s, 200W => E ~ 1 W.h
    • Z=30mm. Consumption at 200W for a deposition rate of about 100 nm/mn => E ~ 0.033 W.h/nm (per wafer)
    • Z=80mm. Consumption at 250W for a deposition rate of about 59 nm/mn => E ~ 0.070 W.h/nm (per wafer)

 

  • Standard recipes for Ir :
    • Target cleaning : 60s, 250W => E ~ 4 W.h
    • Z=30mm. Consumption at 250W for a deposition rate of about 48 nm/mn => E ~ 0.087 W.h/nm (per wafer)
    • Z=80mm. Consumption at 250W for a deposition rate of about 24 nm/mn => E ~ 0.174 W.h/nm (per wafer)

 

  • Standard recipes for IrOx :
    • Target cleaning + contionning (reactive sputtering) : 3 min 10s, 200W => E ~ 11 W.h
    • Z=80mm. Consumption at 200W for a deposition rate of about 39 nm/mn => E ~ 0.085 W.h/nm (per wafer)