Precious material billing

Details of the methods used for precious material billing:

• EVA 760
• LAB 600 H
• LTE 700
• SPIDER 600
• DP 650
• CT 200

E-Beam evaporation

• Unit for billing : nm
• Deposition parameters for billing :
  
  • t_d = thickness measured by the Crystal
  • t_f = fixed thickness for pre-evaporation

• Billed quantity = t_d + t_f
• Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)

E-Beam evaporation

• Unit for billing : nm
• Deposition parameters for billing :
  • t_d = thickness measured by the Crystal
  • t_f = fixed thickness for pre-evaporation

• Billed quantity = t_d + t_f
• Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)

E-Beam evaporation

• Unit for billing : nm
• Deposition parameters for billing :
  • t_d = thickness measured by the Crystal
  • t_f = fixed thickness for pre-evaporation

• Billed quantity = t_d + t_f
• Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)

Sputtering

• Unit for billing :W.h
• Deposition parameters for billing :
  • E₁ = initial consumption [W.h]
  • E₂ = final consumption [W.h]
• Billed quantity = E₂ – E₁
• Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)

 

• Standard recipe for Pt :
  • Target cleaning : 1mn, 1000W => E ~ 17 W.h
  • Consumption at 1000W for a deposition rate of about 260 nm/mn => E ~ 0.064 W.h/nm (per wafer)

 

• Standard recipe for Ru :
  • Target cleaning : 1mn, 1000W => E ~ 17 W.h
  • Consumption at 1000W for a deposition rate of about 230 nm/mn => E ~ 0.072 W.h/nm (per wafer)

Sputtering

• Unit for billing : W.h
• Deposition parameters for billing :
  • E₁ = initial consumption [W.h]
  • E₂ = final consumption [W.h]
• Billed quantity = E₂ – E₁
• Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)

 

• Standard recipe for Pt :
  • Target cleaning : 1mn, ramp from 100W to 150W  + 30 sec at 150 W => E ~ 3.33 W.h
  • Consumption at 150W for a deposition rate of about 14.47 nm/mn => E ~ 0.17 W.h/nm (per wafer)
• Standard recipe for Ir :
  • Target cleaning : 1mn, ramp from 100W to 150W  + 30 sec at 150 W => E ~ 3.33 W.h
  • Consumption at 150W for a deposition rate of about 6 nm/mn => E ~ 0.414 W.h/nm (per wafer)

Sputtering

• Unit for billing :W.h
• Deposition parameters for billing :
  • E₁ = initial consumption [W.h]
  • E₂ = final consumption [W.h]
• Billed quantity = E₂ – E₁
• Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)

 

• Standard recipes for Au :
  • Target cleaning : 20s, 200W => E ~ 1 W.h
  • Z=30mm. Consumption at 200W for a deposition rate of about 115 nm/mn => E ~ 0.029 W.h/nm (per wafer)
  • Z=80mm. Consumption at 50W for a deposition rate of about 12 nm/mn => E ~ 0.068 W.h/nm (per wafer)
  • Z=80mm. Consumption at 250W for a deposition rate of about 74 nm/mn => E ~ 0.056 W.h/nm (per wafer)

 

• Standard recipes for Ag :
  • Target cleaning : 30s, 200W => E ~ 1.7 W.h
  • Z=30mm. Consumption at 200W for a deposition rate of about 171 nm/mn => E ~ 0.019 W.h/nm (per wafer)
  • Z=80mm. Consumption at 250W for a deposition rate of about 104 nm/mn => E ~ 0.040 W.h/nm (per wafer)

 

• Standard recipes for Pt :
  • Target cleaning : 20s, 200W => E ~ 1 W.h
  • Z=30mm. Consumption at 200W for a deposition rate of about 65 nm/mn => E ~ 0.051 W.h/nm (per wafer)
  • Z=80mm. Consumption at 250W for a deposition rate of about 40 nm/mn => E ~ 0.104 W.h/nm (per wafer)

 

• Standard recipes for Pd :
  • Target cleaning : 20s, 200W => E ~ 1 W.h
  • Z=30mm. Consumption at 200W for a deposition rate of about 100 nm/mn => E ~ 0.033 W.h/nm (per wafer)
  • Z=80mm. Consumption at 250W for a deposition rate of about 59 nm/mn => E ~ 0.070 W.h/nm (per wafer)

 

• Standard recipes for Ir :
  • Target cleaning : 60s, 250W => E ~ 4 W.h
  • Z=30mm. Consumption at 250W for a deposition rate of about 48 nm/mn => E ~ 0.087 W.h/nm (per wafer)
  • Z=80mm. Consumption at 250W for a deposition rate of about 24 nm/mn => E ~ 0.174 W.h/nm (per wafer)

 

• Standard recipes for IrOx :
  • Target cleaning + contionning (reactive sputtering) : 3 min 10s, 200W => E ~ 11 W.h
  • Z=80mm. Consumption at 200W for a deposition rate of about 39 nm/mn => E ~ 0.085 W.h/nm (per wafer)