Details of the methods used for precious material billing:
EVA 760 : Au / Ag / Pt / Pd
E-Beam evaporation
- Unit for billing : nm
- Deposition parameters for billing :
- td = thickness measured by the Crystal
- tf = fixed thickness for pre-evaporation
| Materials / Categories | 450 mm | 350 mm | 250 mm |
| Au | 5 nm | 8 nm | 17 nm |
| Ag | To be defined | To be defined | To be defined |
| Pt | 42 nm | 70 nm | 140 nm |
- Billed quantity = td + tf
- Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)
LAB 600 H : Au / Ag / Pt / Pd
E-Beam evaporation
- Unit for billing : nm
- Deposition parameters for billing :
- td = thickness measured by the Crystal
- tf = fixed thickness for pre-evaporation
| Materials / Categories | HRN | LRN |
| Au | 3 nm | 8 nm |
| Ag | 40 nm | 100 nm |
| Pt | 18 nm | 45 nm |
| Pd | 24 nm | 60 nm |
- Billed quantity = td + tf
- Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)
SPIDER 600 : Pt / Ru
Sputtering
- Unit for billing :W.h
- Deposition parameters for billing :
- E1 = initial consumption [W.h]
- E2 = final consumption [W.h]
- Billed quantity = E2 – E1
- Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)
- Standard recipe for Pt :
- Target cleaning : 1mn, 1000W => E ~ 17 W.h
- Consumption at 1000W for a deposition rate of about 260 nm/mn => E ~ 0.064 W.h/nm (per wafer)
- Standard recipe for Ru :
- Target cleaning : 1mn, 1000W => E ~ 17 W.h
- Consumption at 1000W for a deposition rate of about 230 nm/mn => E ~ 0.072 W.h/nm (per wafer)
DP 650 : Au / Ag / Pt / Pd
Sputtering
- Unit for billing :W.h
- Deposition parameters for billing :
- E1 = initial consumption [W.h]
- E2 = final consumption [W.h]
- Billed quantity = E2 – E1
- Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)
- Standard recipes for Au :
- Target cleaning : 20s, 200W => E ~ 1 W.h
- Z=30mm. Consumption at 200W for a deposition rate of about 115 nm/mn => E ~ 0.029 W.h/nm (per wafer)
- Z=80mm. Consumption at 50W for a deposition rate of about 12 nm/mn => E ~ 0.068 W.h/nm (per wafer)
- Z=80mm. Consumption at 250W for a deposition rate of about 74 nm/mn => E ~ 0.056 W.h/nm (per wafer)
- Standard recipes for Ag :
- Target cleaning : 30s, 200W => E ~ 1.7 W.h
- Z=30mm. Consumption at 200W for a deposition rate of about 171 nm/mn => E ~ 0.019 W.h/nm (per wafer)
- Z=80mm. Consumption at 250W for a deposition rate of about 104 nm/mn => E ~ 0.040 W.h/nm (per wafer)
- Standard recipes for Pt :
- Target cleaning : 20s, 200W => E ~ 1 W.h
- Z=30mm. Consumption at 200W for a deposition rate of about 65 nm/mn => E ~ 0.051 W.h/nm (per wafer)
- Z=80mm. Consumption at 250W for a deposition rate of about 40 nm/mn => E ~ 0.104 W.h/nm (per wafer)
- Standard recipes for Pd :
- Target cleaning : 20s, 200W => E ~ 1 W.h
- Z=30mm. Consumption at 200W for a deposition rate of about 100 nm/mn => E ~ 0.033 W.h/nm (per wafer)
- Z=80mm. Consumption at 250W for a deposition rate of about 59 nm/mn => E ~ 0.070 W.h/nm (per wafer)
- Standard recipes for Ir :
- Target cleaning : 60s, 250W => E ~ 4 W.h
- Z=30mm. Consumption at 250W for a deposition rate of about 48 nm/mn => E ~ 0.087 W.h/nm (per wafer)
- Z=80mm. Consumption at 250W for a deposition rate of about 24 nm/mn => E ~ 0.174 W.h/nm (per wafer)
- Standard recipes for IrOx :
- Target cleaning + contionning (reactive sputtering) : 3 min 10s, 200W => E ~ 11 W.h
- Z=80mm. Consumption at 200W for a deposition rate of about 39 nm/mn => E ~ 0.085 W.h/nm (per wafer)