Precious material billing

Details of the methods used for precious material billing:

EVA 760 : Au / Ag / Pt / Pd

E-Beam evaporation

  • Unit for billing : nm
  • Deposition parameters for billing :
    • td = thickness measured by the Crystal
    • tf = fixed thickness for pre-evaporation
Materials / Categories450 mm350 mm250 mm
Au5 nm8 nm17 nm
AgTo be definedTo be definedTo be defined
Pt42 nm70 nm140 nm
  • Billed quantity = td + tf
  • Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)

LAB 600 H : Au / Ag / Pt / Pd

E-Beam evaporation

  • Unit for billing : nm
  • Deposition parameters for billing :
    • td = thickness measured by the Crystal
    • tf = fixed thickness for pre-evaporation
Materials / CategoriesHRNLRN
Au3 nm8 nm
Ag40 nm100 nm
Pt18 nm45 nm
Pd24 nm60 nm
  • Billed quantity = td + tf
  • Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)

SPIDER 600 : Pt / Ru

Sputtering

  • Unit for billing :W.h
  • Deposition parameters for billing :
    • E1 = initial consumption [W.h]
    • E2 = final consumption [W.h]
  • Billed quantity = E2 – E1
  • Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)

 

  • Standard recipe for Pt :
    • Target cleaning : 1mn, 1000W => E ~ 17 W.h
    • Consumption at 1000W for a deposition rate of about 260 nm/mn => E ~ 0.064 W.h/nm (per wafer)

 

  • Standard recipe for Ru :
    • Target cleaning : 1mn, 1000W => E ~ 17 W.h
    • Consumption at 1000W for a deposition rate of about 230 nm/mn => E ~ 0.072 W.h/nm (per wafer)

DP 650 : Au / Ag / Pt / Pd

Sputtering

  • Unit for billing :W.h
  • Deposition parameters for billing :
    • E1 = initial consumption [W.h]
    • E2 = final consumption [W.h]
  • Billed quantity = E2 – E1
  • Unit prices are fixed each month and are available with the user interface (Rates / Process overcharges)

 

  • Standard recipes for Au :
    • Target cleaning : 20s, 200W => E ~ 1 W.h
    • Z=30mm. Consumption at 200W for a deposition rate of about 115 nm/mn => E ~ 0.029 W.h/nm (per wafer)
    • Z=80mm. Consumption at 50W for a deposition rate of about 12 nm/mn => E ~ 0.068 W.h/nm (per wafer)
    • Z=80mm. Consumption at 250W for a deposition rate of about 74 nm/mn => E ~ 0.056 W.h/nm (per wafer)

 

  • Standard recipes for Ag :
    • Target cleaning : 30s, 200W => E ~ 1.7 W.h
    • Z=30mm. Consumption at 200W for a deposition rate of about 171 nm/mn => E ~ 0.019 W.h/nm (per wafer)
    • Z=80mm. Consumption at 250W for a deposition rate of about 104 nm/mn => E ~ 0.040 W.h/nm (per wafer)

 

  • Standard recipes for Pt :
    • Target cleaning : 20s, 200W => E ~ 1 W.h
    • Z=30mm. Consumption at 200W for a deposition rate of about 65 nm/mn => E ~ 0.051 W.h/nm (per wafer)
    • Z=80mm. Consumption at 250W for a deposition rate of about 40 nm/mn => E ~ 0.104 W.h/nm (per wafer)

 

  • Standard recipes for Pd :
    • Target cleaning : 20s, 200W => E ~ 1 W.h
    • Z=30mm. Consumption at 200W for a deposition rate of about 100 nm/mn => E ~ 0.033 W.h/nm (per wafer)
    • Z=80mm. Consumption at 250W for a deposition rate of about 59 nm/mn => E ~ 0.070 W.h/nm (per wafer)

 

  • Standard recipes for Ir :
    • Target cleaning : 60s, 250W => E ~ 4 W.h
    • Z=30mm. Consumption at 250W for a deposition rate of about 48 nm/mn => E ~ 0.087 W.h/nm (per wafer)
    • Z=80mm. Consumption at 250W for a deposition rate of about 24 nm/mn => E ~ 0.174 W.h/nm (per wafer)

 

  • Standard recipes for IrOx :
    • Target cleaning + contionning (reactive sputtering) : 3 min 10s, 200W => E ~ 11 W.h
    • Z=80mm. Consumption at 200W for a deposition rate of about 39 nm/mn => E ~ 0.085 W.h/nm (per wafer)