AZ 1512 HS is a thin photoresist designed for fast and reproducible photolithography, with high contrast and high development rate as well as improved substrate adhesion. It is the standard resist choice for photolithography steps with no strict requirements in terms of resolution, sidewall profile or thickness.
AZ ECI 3007 is a thin (0.6 to 1.5 um) chemically amplified i-line photoresist designed for high resolution photolithography and accurate pattern transfer. It is the standard resist choice to reach critical dimensions (CD) < 1um with mask-aligners in vaccum contact mode or the VPG200 laser writer.
AZ ECI 3027 is a chemically amplified i-line photoresist from the AZ ECI family. With an intermediate thickness range (2 to 5 um), it is a good resist choice for dry-etching applications with moderate etching depth but requiring accurate control of the pattern dimensions.
AZ 10XT-20 is a photoresist from the AZ 10XT family (which replaces the old AZ9200 line of products) with a thickness range from 2um to 4um. It is the standard resist choice for dry etching applications requiring steep sidewalls. Transfer of critical dimensions from the mask/design is not accurate and will require the introduction of CD biases (~800nm).
AZ 10XT-60 is a thick photoresist from the AZ 10XT family (which replaces the old AZ9200 line of products). With steep sidewalls and high aspect ratio, it is the ideal resist choice for deep etching of silicon (Bosch process). Transfer of critical dimensions from the mask/design is not accurate and will require the introduction of CD biases (~800nm).
AZ 40XT is a chemically amplified ultrathick positive photoresist, requiring low exposure doses and with high development rate. The field of applications of the resist starts at 15-30 µm, where photolithography processes with conventional positive resists become very time-consuming due to increasing delays for rehydratation or N2-outgassing, both not required for this resist. This resist is recommended for deep etching in harsh environnment.
LOR (Lift-Off Resist) 5A is a polymer which dissolve in alkaline solutions. LOR 5A, used as sacrificial material, can be underetched with standard photoresist developers (TMAH- or KOH-based) just by extending the development time of the imaging top resist. This method is known as the double layer lift-off or bi-layer lift-off. Extreme resist profile can be obtained, enabling efficient lift-off of evaporated or even sputtered material.
AZ nLOF 2020 is a negative photoresist, whereby the exposed resist remains after development with an adjustable undercut. The negative profile in combination with its high softening point makes AZ nLOF 2020 a well-suited resist for lift-off aswell as for any other processes requiring resist structures with high to very high thermal stability.
AZ 15 nXT is a cross-linking negative resist for resist film thicknesses up to approximatively 30 µm. The high stability and superior adhesion make the AZ 15 nXT well suited for most deep etching and electroplating applications. The resist sidewalls are very steep.
M108Y (8cP) is a multipurpose thin DUV resist compatible with the ASML PAS5500/350C platform. It is designed for 0.15 µm technology. This high-resolution resist is associated with a bottom anti-reflection coating (DUV 42P BARC) for improved imaging performances. With optimized dose and focus parameters, line & space (L&S) patterns down to 120 nm and iso patterns < 110nm have been demonstrated on DUV exposure equipment.
M35G (27cP) is a thick DUV resist, designed for 0.25 µm technology. This resist can be used with or without bottom anti-reflection coating (BARC). With optimized dose and focus parameters, line & space (L&S) patterns down to 180 nm and iso patterns < 170nm have been demonstrated on DUV exposure equipment.
DUV 42P (6cP) is a thin (~65nm), conformal bottom anti-reflection coating (BARC) that helps reducing standing waves in the exposed DUV resist in order to improve resolution and resist profiles. The film has high absorption at the exposure wavelength (λ = 248nm) to prevent any backside reflections. After the photoresist development step, DUV 42P is etched down with conventional plasma chemistries.
SU-8 photoresist is based on an epoxy resist developed by IBM. SU-8 is a thick (single coating up to 300um), near-UV photoresist (i-line), specifically used for applications requiring high aspect ratios with vertical sidewall profiles. SU-8, after exposure and cross-linking, is resistant to wet chemistry (solvent or base) and cannot be stripped.
The ORDYL dry film is a negative tone i-line photoresists, rolled over the substrate by hot laminators, and offering high resistance to plating baths and acid etching processes. After exposure it is developed and stripped in alkaline solutions. Although it does not reach the printing resolution of spin-coated photoresists, it offer an interesting alternative for substrate with extremely high topography. CMi offers access to ORDYL 920 and 940 grades from ELGA Europe but dry films from other companies can also be used in CMi.
Polyimide PI 2610 and PI 2611 are rigid polymers with desirable film properties such as low stress, low thermal expansion (CTE matching silicon) , low moisture uptake, good ductility. It is ideally suited as a dielectric layer for most semiconductor applications requiring thick films or stacked layers of metallization. Patterning is typically done by dry etch or laser ablation techniques.
AZ P4K-AP is used for wafer surface protection during physical or chemical related processes. It has the same base polymer than common i-line photoresist but without the photosensitive component, therefore it cannot be patterned through exposition.