TEL Unity Me

Preliminary and fundamental remarks:
  • The TEL etcher must NOT be exposed to any metallics or even traces of metallics. Wafers that were once in contact with layers of metallics must NOT be loaded in this etcher.
  • If any doubts, please get in touch with etching staff before proceeding.

RESERVATION RULES AND BOOKING FEES POLICY:

1. Maximum allowed booking per person between 9am and 5pm is 2 hours. It is still possible to get 4 consecutive hours from 7am to 11am or from 3pm to 7pm.
2. Reservation names must correspond to operators.

Contents

  1. Introduction
  2. DRM chamber
  3. SCCM chamber
  4. Photos gallery

I. Introduction

TEL Unity Me system is an automatic plasma etching production tool from Tokyo Electronic (TEL). As shown in figure 1, the tool contains two cassette loaders (C1-100mm wafers and C2-200mm wafers), one transfer chamber (T/C), and two process modules (P1-100mm and P2-200mm). P1 is a DRM (Dipole Ring Magnet) chamber, and P2 is a SCCM (Super Capacitively Coupled Module) chamber. Both chambers designs are optimized for etching dielectrics (e.g. SiO2 and SixNy)

Figure1: top view of the TEL Unity Me etcher

II. DRM chamber for 100mm wafers processing

DRM is a RIE chamber (Reactive Ion Etching) with assistance of a magnetic field. It is structured as shown in the figure 2.

Figure2: DRM chamber cross-view

Available process gases: C4F8 [30 sccm], CF4 [100 sccm], CHF3 [100 sccm], CH2F2 [100 sccm], O2 [30 sccm & 1000sccm], N2 [100 sccm], Ar [1000 sccm].

MaterialsGap (mm) / SH temp (°C)Process nameChemistryMask materialEtch rate (nm/min)Selectivity
DUV42P
BARC from Brewer
47 / 40
CMI.BARC
CF4 JSR M108Y
JSR M35G

JSR M35G
DUV42P: 110
M108Y, M35G: 110
SiO2: 170
Si: 85
1:1
SiO2 47 / 40
CMI.OX.PR

@1100W
C4F8
O2
Ar
PR SiO2: 350
@600W, SiO2: 230
@500W, SiO2: 200
@400W, SiO2: 160
@300W, SiO2: 125
@200W, SiO2: 85
>3:1
SiO2 47 / 40
CMI.OX.ASI

CH2F2
C4F8
O2
Ar
aSi
SiO2: 450

aSi: 35
JSR M108Y: 130
12:1
Si3N4 37 / 40
CMI.SIN.OX

CH2F2
O2
Ar
HSQ
PR
Si3N4: 130
Si: 25
HSQ: 80
PR: 125
>1:1
Chamber Clean
27 / XX according to etch process
O2/CLN/XXC O2

III. SCCM chamber for 200mm wafers processing

Figure 3 shows SCCM chamber configuration. RF power of 2 MHz is applied through the matcher to the lower elctrode. RF power of 60 MHz is applied similarly through the matcher to the upper electrode. Because the upper and the lower power rode lines are sepparetely connected to the ground potential through the high frequency and low frequency filters, the relative high frequency power supply will not enter the power supply of the opposite side. The wafer is placed on the lower electrode, and remains on it by electrostatic clamping.

Figure3: SCCM chamber cross-view

Available process gases: C4F8 [30 sccm], CF4 [100 sccm], CHF3 [100 sccm], CH2F2 [100 sccm], O2 [30 sccm & 1000sccm], N2 [100 sccm], Ar [1000 sccm].

IV. Photos gallery