- The TEL etcher must NOT be exposed to any metallics or even traces of metallics. Wafers that were once in contact with layers of metallics must NOT be loaded in this etcher.
- If any doubts, please get in touch with etching staff before proceeding.
RESERVATION RULES AND BOOKING FEES POLICY:
1. Maximum allowed booking per person between 9am and 5pm is 2 hours. It is still possible to get 4 consecutive hours from 7am to 11am or from 3pm to 7pm.
2. Reservation names must correspond to operators.
Contents
I. Introduction
TEL Unity Me system is an automatic plasma etching production tool from Tokyo Electronic (TEL). As shown in figure 1, the tool contains two cassette loaders (C1-100mm wafers and C2-200mm wafers), one transfer chamber (T/C), and two process modules (P1-100mm and P2-200mm). P1 is a DRM (Dipole Ring Magnet) chamber, and P2 is a SCCM (Super Capacitively Coupled Module) chamber. Both chambers designs are optimized for etching dielectrics (e.g. SiO2 and SixNy)
II. DRM chamber for 100mm wafers processing
DRM is a RIE chamber (Reactive Ion Etching) with assistance of a magnetic field. It is structured as shown in the figure 2.
Available process gases: C4F8 [30 sccm], CF4 [100 sccm], CHF3 [100 sccm], CH2F2 [100 sccm], O2 [30 sccm & 1000sccm], N2 [100 sccm], Ar [1000 sccm].
| Materials | Gap (mm) / SH temp (°C) | Process name | Chemistry | Mask material | Etch rate (nm/min) | Selectivity |
| DUV42P BARC from Brewer | 47 / 40 | CMI.BARC | CF4 | JSR M108Y JSR M35G | JSR M35G DUV42P: 110 M108Y, M35G: 110 SiO2: 170 Si: 85 | 1:1 |
| SiO2 | 47 / 40 | CMI.OX.PR @1100W | C4F8 O2 Ar | PR | SiO2: 415 @600W, SiO2: 230 @500W, SiO2: 200 @400W, SiO2: 160 @300W, SiO2: 125 @200W, SiO2: 85 | >3:1 |
| SiO2 | 47 / 40 | CMI.OX.ASI | CH2F2 C4F8 O2 Ar | aSi | SiO2: 450 aSi: 35 JSR M108Y: 130 | 12:1 |
| Si3N4 | 37 / 40 | CMI.SIN.OX | CH2F2 O2 Ar | HSQ PR | Si3N4: 130 Si: 25 HSQ: 80 PR: 125 | >1:1 |
| Chamber Clean | 27 / XX according to etch process | O2/CLN/XXC | O2 | — | — | — |
III. SCCM chamber for 200mm wafers processing
Figure 3 shows SCCM chamber configuration. RF power of 2 MHz is applied through the matcher to the lower elctrode. RF power of 60 MHz is applied similarly through the matcher to the upper electrode. Because the upper and the lower power rode lines are sepparetely connected to the ground potential through the high frequency and low frequency filters, the relative high frequency power supply will not enter the power supply of the opposite side. The wafer is placed on the lower electrode, and remains on it by electrostatic clamping.
Available process gases: C4F8 [30 sccm], CF4 [100 sccm], CHF3 [100 sccm], CH2F2 [100 sccm], O2 [30 sccm & 1000sccm], N2 [100 sccm], Ar [1000 sccm].
IV. Photos gallery
