LPCVD / Dry or wet oxidation / Alloying / Doping / Diffusion / Densification / Annealing / ALD
- Equipement
- – 6 x LPCVD tubes
– 1-1 polysilicon, amorphous silicon
– 1-2 stoichiometric silicon nitrideSi3N4, low stress silicon nitride SixNy
– 3-1 low temperature oxide (LTO), undoped oxide, PSG, BPSG, BSG
– 3-2 TEOS
– 4-1 stoichiometric silicon nitrideSi3N4, low stress silicon nitride SixNy
– 4-2 high temperature oxide (HTO), undoped oxide
– 5 x Oxidation tubes
– 2-1 dry oxide, densification
– 2-3 dry oxide, very clean processes for gate oxide
– 2-2 wet oxide
– 3-4 wet or dry oxide or annealing for non-microelectronic compatible processes
– 4-3 wet oxide
– 2 x Diffusion tubes
– 2-4 wet oxide, dopants diffusion, tube made of SiC for very high temperature processes (up to 1250°C)
– 4-4 annealing, tube made of SiC for very high temperature processes (up to 1250°C)
– 1 x Alloying tube
– 1-3 alloying of silicon and aluminum at junctions
– 1 x POCl3 doping tube
– 1-4 “N” doping (Phosphore) of silicon and polysilicon
– RCA cleaning mandatory before oxidation & LPCVD
– Location: Zone 3 - Documentation
- – Manual
- Responsibles (Process)
- D. Bouvet
A. Toros
R. Juttin - Responsibles (Maintenance)
- N. Roch
M. Marmelo
P. Madliger
- Equipement
- – RCA cleaning mandatory before oxidation & LPCVD
– Non CMOS compatible materials are prohibited in this bench
– Location: Zone 3 - Documentation
- – Manual
- Responsibles (Process)
- D. Bouvet
G. Kumuntu - Responsibles (Maintenance)
- P. Madliger
- Equipement
- – For activation and crystallization processes
– Flash head : 6 lamps (3 lamp circuits, 2 lamps each)
– Power supply : 160 W each circuit
– Vacuum system with inert gas supply and IR heater (up to 880°C)
– Substrate size : 4 inch wafer (thickness max. 2mm)
– Pulse duration : 0.35 to 13.9 ms
– Max energy : 4 to 55 J/cm2
– Location: Zone 8 - Documentation
- – Manual
- Responsibles (Process)
- D. Bouvet
A. Toros - Responsibles (Maintenance)
- N. Roch
PECVD
The ICP CVD is for the moment only accessible to LPQM lab members for development.
- Equipement
- – PlasmaPro 100 platform equiped with an Inductively Couple Plasma Chemical Vapor Deposition (ICP CVD) process module.
– 5kW ICP Plasma deposition source
– RF 600 W generator for etch
– Up to 400°C table temperature
– From 100mm to 200mm wafers
– Location: Zone 3 - Documentation
- Manual
- Responsibles
- B. Cuénod
R. Juttin
O. Feijo
Evaporation
- Equipement
- – 1 x e-beam gun (6 pockets)
– 1 x ion source (Ar, O2) for Ion Assisted Deposition (IAD)
– Chamber designed for lift-off evaporation (high distance source-substrates)
– Heaters (evaporation from room temperature and up to 200°C)
– Up to 8 x 100 mm or 4 x 150 mm wafers
– Location: Zone 4 - Documentation
- – Manual
- Responsibles
- R. Juttin
G. Clerc
B. Cuénod
Sputtering
- Equipement
- 5 x modules [+ Load lock & Transfer module]:
– N°2 – Oxides & Nitrides (3 x cathodes Ø 100 mm confocal,
RF/DC-pulsed)
– N°3 – UHV Ferromagnetic metals & Metals (4 x cathodes Ø 100mm confocal, RF/DC-pulsed + HIPIMS)
RF/DC-pulsed)
– N°4 – Dielectrics (1 x cathode Ø 250mm, planar,
RF-Sputtering)
– N°5 – UHV Semiconductors & Metals (4 x cathodes Ø 100mm confocal, RF/DC-pulsed + HIPIMS)
– N°6 – Nitrides (3 x cathodes Ø 100 mm confocal,
RF/DC-pulsed)
Process:
– Deposition at Room Temperature or High Temperature
– RF-Etch for substrate cleaning or activation prior deposition
– Up to 200 mm wafers
– Location: Zone 4 - Documentation
- – Manual
- Responsibles
- R. Juttin
B. Cuénod
G. Clerc
Pulsed Laser Deposition
Parylene coating
- Equipement
- – Any kind of wafers and samples coating
– Parylene C
– Biocompatible material
– Thickness range from 50nm up to 10um
– Room temperature and double side coating
– Conformal and stress free layer
– Acids, bases and solvents resistant layers
– Location: Zone 10 - Documentation
- – Manual
– Silanization
– Recristallization - Responsibles
- C. Hibert
M. Marmelo