– 4 x LPCVD tube – 1-1 polysilicon, amorphous silicon – 1-2 stoichiometric silicon nitrideSi3N4, low stress silicon nitride SixNy – 3-1 low temperature oxide (LTO), undoped oxide, PSG, BPSG, BSG – 3-2 TEOS – 4 x Oxidation tube – 2-1 dry oxide, densification – 2-3 dry oxide, very clean processes for gate oxide – 2-2 wet oxide – 3-4 wet or dry oxide or annealing for non-microelectronic compatible processes – 1 x Diffusion tube – 2-4 wet oxide, dopants diffusion, tube made of SiC for very high temperature processes (up to 1250°C) – 1 x Alloying tube – 1-3 alloying of silicon and aluminum at junctions – 1 x POCl3 doping tube – 1-4 “N” doping (Phosphore) of silicon and polysilicon – RCA cleaning mandatory before oxidation & LPCVD – Location: Zone 3
– Thermal treatment from 200°C to 1200°C – N2, O2, NH3 and forming gas (5% H2 in N2) or vacuum – From dies to 8” wafers – Ramp up 100°C/s max – Location: Zone 3
– 1 x e-beam gun (6 pockets) – 3 x working distances (450mm / 350mm / 250mm) – Plasma Ar/O2 for substrate cleaning or activation prior deposition – Up to 8 x 100 mm or 5 x 150 mm wafers – Location: Zone 11
– 1 x e-beam gun (6 pockets) – 1 x ion source (Ar, O2) for Ion Assisted Deposition (IAD) – Chamber designed for lift-off evaporation (high distance source-substrates) – Heaters (evaporation from room temperature and up to 200°C) – Up to 8 x 100 mm or 4 x 150 mm wafers – Location: Zone 4
– 2 x DC Magnetron – 1 x pulsed DC Magnetron – 1 x RF Magnetron – 1 x RF-Etch for substrate cleaning prior deposition – Heaters (sputtering from room temperature and up to 350°C) – Location: Zone 4
– 2 x DC/RF Magnetron – 4 x DC Magnetron – 1 x Cold post (cold water cooling) – 1 x Hot post (50°C – 400°C) – RF-Etch (Ar/O2) for substrate cleaning or activation prior deposition on both posts – Location: Zone 11
– Wet bench for electroplating of Copper and Nickel – Chucks for 100mm wafers only – DC current source up to 2A – Possibility to heat all baths up to 60°C with thermal control – Mechanical agitation system for chuck with adjustable speed (back and forth movement) – Bath consumption measurement device (“Integrateur”) – Location: Zone 19
– Any kind of wafers and samples coating – Parylene C – Biocompatible material – Thickness range from 50nm up to 10um – Room temperature and double side coating – Conformal and stress free layer – Acids, bases and solvents resistant layers – Location: Zone 10
