– 6 x LPCVD tubes – 1-1 polysilicon, amorphous silicon – 1-2 stoichiometric silicon nitrideSi3N4, low stress silicon nitride SixNy – 3-1 low temperature oxide (LTO), undoped oxide, PSG, BPSG, BSG – 3-2 TEOS – 4-1 stoichiometric silicon nitrideSi3N4, low stress silicon nitride SixNy – 4-2 high temperature oxide (HTO), undoped oxide – 5 x Oxidation tubes – 2-1 dry oxide, densification – 2-3 dry oxide, very clean processes for gate oxide – 2-2 wet oxide – 3-4 wet or dry oxide or annealing for non-microelectronic compatible processes – 4-3 wet oxide – 2 x Diffusion tubes – 2-4 wet oxide, dopants diffusion, tube made of SiC for very high temperature processes (up to 1250°C) – 4-4 annealing, tube made of SiC for very high temperature processes (up to 1250°C) – 1 x Alloying tube – 1-3 alloying of silicon and aluminum at junctions – 1 x POCl3 doping tube – 1-4 “N” doping (Phosphore) of silicon and polysilicon
– Thermal treatment from 200°C to 1200°C – N2, O2, NH3 and forming gas (5% H2 in N2) or vacuum – From dies to 8” wafers – Ramp up 100°C/s max – Location: Zone 3
– For activation and crystallization processes – Flash head : 6 lamps (3 lamp circuits, 2 lamps each) – Power supply : 160 W each circuit – Vacuum system with inert gas supply and IR heater (up to 880°C) – Substrate size : 4 inch wafer (thickness max. 2mm) – Pulse duration : 0.35 to 13.9 ms – Max energy : 4 to 55 J/cm2 – Location: Zone 8
– PlasmaPro 100 platform equiped with an Inductively Couple Plasma Chemical Vapor Deposition (ICP CVD) process module. – 5kW ICP Plasma deposition source – RF 600 W generator for etch – Up to 400°C table temperature – From 100mm to 200mm wafers – Location: Zone 3
– 1 x e-beam gun (6 pockets) – 3 x working distances (450mm / 350mm / 250mm) – Plasma Ar/O2 for substrate cleaning or activation prior deposition – Up to 8 x 100 mm or 5 x 150 mm wafers – Location: Zone 11
– 1 x e-beam gun (6 pockets) – 1 x ion source (Ar, O2) for Ion Assisted Deposition (IAD) – Chamber designed for lift-off evaporation (high distance source-substrates) – Heaters (evaporation from room temperature and up to 200°C) – Up to 8 x 100 mm or 4 x 150 mm wafers – Location: Zone 4
– 1 x Loadlock (Descum & Ion milling) – 1 x Evaporation chamber – 1 x Oxidation chamber – System specially designed for Josephson junctions fabrication – Location: Zone 19
– 2 x DC Magnetron – 1 x pulsed DC Magnetron – 1 x RF Magnetron – 1 x RF-Etch for substrate cleaning prior deposition – Heaters (sputtering from room temperature and up to 350°C) – Location: Zone 4
– 2 x DC/RF Magnetron – 4 x DC Magnetron – 1 x Cold post (cold water cooling) – 1 x Hot post (50°C – 400°C) – RF-Etch (Ar/O2) for substrate cleaning or activation prior deposition on both posts – Location: Zone 11
– Any kind of wafers and samples coating – Parylene C – Biocompatible material – Thickness range from 50nm up to 10um – Room temperature and double side coating – Conformal and stress free layer – Acids, bases and solvents resistant layers – Location: Zone 10
