Thin films

LPCVD / Dry or wet oxidation / Alloying / Doping / Diffusion / Densification / Annealing / ALD

Equipement
– 6 x LPCVD tubes
– 1-1 polysilicon, amorphous silicon
– 1-2 stoichiometric silicon nitrideSi3N4, low stress silicon nitride SixNy
– 3-1 low temperature oxide (LTO), undoped oxide, PSG, BPSG, BSG
– 3-2 TEOS
– 4-1 stoichiometric silicon nitrideSi3N4, low stress silicon nitride SixNy
– 4-2 high temperature oxide (HTO), undoped oxide
– 5 x Oxidation tubes
– 2-1 dry oxide, densification
– 2-3 dry oxide, very clean processes for gate oxide
– 2-2 wet oxide
– 3-4 wet or dry oxide or annealing for non-microelectronic compatible processes
– 4-3 wet oxide
– 2 x Diffusion tubes
– 2-4 wet oxide, dopants diffusion, tube made of SiC for very high temperature processes (up to 1250°C)
– 4-4 annealing, tube made of SiC for very high temperature processes (up to 1250°C)
– 1 x Alloying tube
– 1-3 alloying of silicon and aluminum at junctions
– 1 x POCl3 doping tube
– 1-4 “N” doping (Phosphore) of silicon and polysilicon

RCA cleaning mandatory before oxidation & LPCVD

– Location: Zone 3
Documentation
Manual
Responsibles (Process)
D. Bouvet
A. Toros
R. Juttin
Responsibles (Maintenance)
N. Roch
M. Marmelo
P. Madliger
Equipement
– RCA cleaning mandatory before oxidation & LPCVD
– Non CMOS compatible materials are prohibited in this bench
– Location: Zone 3
Documentation
Manual
Responsibles (Process)
D. Bouvet
G. Kumuntu
Responsibles (Maintenance)
P. Madliger
Equipement
– Thermal deposition
– Plasma assisted deposition
– Ozone generator
– Deposition temperature from 200°C to 450°C
– Location: Zone 4
Documentation
Manual
Responsibles (Process)
D. Bouvet
A. Toros
Responsibles (Maintenance)
N. Roch
M. Marmelo
Equipement
– Thermal deposition
– Plasma assisted deposition
– Ozone generator
– Deposition temperature from 200°C to 450°C
– Location: Zone 4
Documentation
Manual
Responsibles (Process)
D. Bouvet
A. Toros
Responsibles (Maintenance)
N. Roch
M. Marmelo
Equipement
– Thermal treatment from 200°C to 1200°C
– N2, O2, NH3 and forming gas (5% H2 in N2) or vacuum
– From dies to 8” wafers
– Ramp up 100°C/s max
– Location: Zone 3
Documentation
Manual
Responsibles (Process)
D. Bouvet
A. Toros
Responsibles (Maintenance)
N. Roch
M. Marmelo
Equipement
– For activation and crystallization processes
– Flash head : 6 lamps (3 lamp circuits, 2 lamps each)
– Power supply : 160 W each circuit
– Vacuum system with inert gas supply and IR heater (up to 880°C)
– Substrate size : 4 inch wafer (thickness max. 2mm)
– Pulse duration : 0.35 to 13.9 ms
– Max energy : 4 to 55 J/cm2
– Location: Zone 8
Documentation
Manual
Responsibles (Process)
D. Bouvet
A. Toros
Responsibles (Maintenance)
N. Roch

PECVD

Equipement
– PlasmaPro 100 platform equiped with an Inductively Couple Plasma Chemical Vapor Deposition (ICP CVD) process module.
– 5kW ICP Plasma deposition source
– RF 600 W generator for etch
– Up to 400°C table temperature
– From 100mm to 200mm wafers
– Location: Zone 3
Documentation
Coming Soon
Responsibles
B. Cuénod
R. Juttin
O. Feijo

Evaporation

Equipement
– 1 x e-beam gun (6 pockets)
– 3 x working distances (450mm / 350mm / 250mm)
– Plasma Ar/O2 for substrate cleaning or activation prior deposition
– Up to 8 x 100 mm or 5 x 150 mm wafers
– Location: Zone 11
Documentation
Manual
Responsibles
R. Juttin
G. Clerc
B. Cuénod
Equipement
– 1 x e-beam gun (6 pockets)
– 1 x ion source (Ar, O2) for Ion Assisted Deposition (IAD)
– Chamber designed for lift-off evaporation (high distance source-substrates)
– Heaters (evaporation from room temperature and up to 200°C)
– Up to 8 x 100 mm or 4 x 150 mm wafers
– Location: Zone 4
Documentation
Manual
Responsibles
R. Juttin
G. Clerc
B. Cuénod
Equipement
– 2 x boat for thermal evaporation
– Location: Zone 10
Documentation
Manual
Responsibles
G. Clerc
Equipement
– 3 x boat for thermal evaporation
– Location: Zone 10
Documentation
Manual
Responsibles
G. Clerc
Equipement
– 1 x Loadlock (Descum & Ion milling)
– 1 x Evaporation chamber
– 1 x Oxidation chamber
– System specially designed for Josephson junctions fabrication
– Location: Zone 19
Documentation
Manual
Responsibles
R. Juttin
B. Cuénod

Sputtering

Equipement
– 2 x DC Magnetron
– 1 x pulsed DC Magnetron
– 1 x RF Magnetron
– 1 x RF-Etch for substrate cleaning prior deposition
– Heaters (sputtering from room temperature and up to 350°C)
– Location: Zone 4
Documentation
Manual
Responsibles
R. Juttin
G. Clerc
B. Cuénod
Equipement
– 2 x DC/RF Magnetron
– 4 x DC Magnetron
– 1 x Cold post (cold water cooling)
– 1 x Hot post (50°C – 400°C)
– RF-Etch (Ar/O2) for substrate cleaning or activation prior deposition on both posts
– Location: Zone 11
Documentation
Manual
Responsibles
R. Juttin
G. Clerc
B. Cuénod

Pulsed Laser Deposition

Equipement
– Pulsed Laser Deposition
– Up to 8 inches wafers (Target-dependent)
– 2 x SMP 800 Chambers
– 1 x Pulsed excimer laser (UV – 248 nm)
– Location: Zone 18
Documentation
Manual
Responsibles
R. Juttin

Parylene coating

Equipement
– Any kind of wafers and samples coating
– Parylene C
– Biocompatible material
– Thickness range from 50nm up to 10um
– Room temperature and double side coating
– Conformal and stress free layer
– Acids, bases and solvents resistant layers
– Location: Zone 10
Documentation
Manual
Silanization
Recristallization
Responsibles
C. Hibert
M. Marmelo