Tepla 300

Contents

  1. Introduction
  2. Equipement description
  3. Standard processes
  4. How to use the system
  5. Allowed materials
  6. Forbidden processes

To be read first:

  • Materials that deteriorate easily upon exposure to oxygen (Ag, Cu, Cr, Fe, …) should not be processed in this machine!
  • This equipment is NOT micro-electronic compatible. For micro-electronic compatibility, please use Oxford PRS900 (zone 2).
  • Processes that have not been tested are: isotropic etching of glass, ceramic, SiO2, Si3N4, Si.

I. Introduction ↑

The Tepla 300 uses high frequency plasma. Main applications are:

  • Photo Resist (PR) stripping.
  • Wafers surface cleaning before subsequent processes.
  • Enhancement of hydrophilic behavior of plastics surfaces.

II. Equipement description ↑

  • Quartz primary vacuum chamber (dimension: Dint. 245 mm x Prof. 380 mm)
  • Plasma frequency: 2.45 GHz
  • Plasma power:  200 to 1000 W
  • Gas : O2 and CF4 (max. flow 500 ml/min)
  • Quartz holders for 25 wafers from 75 mm to 100 mm

III. Standard processes ↑

Resist strip

Positive resists etch rate = 350 nm/min depending on the number of wafers to be processed in the batch.

Program Gas 1 (O2, ml/min)Gas 2 (CF4, ml/min) Power (W)Time (mm:ss) EPD (0, 1, 2) Remarks
01400050001:0011 min over-etch after end point detection
02400050000:300
03400050001:000
04400050004:000
05400050007:000
06400050010:000
08400050020:000
075000100030:000Strip for 25 wafers batch

Si3N4 strip

Si3N4 etch rate= 230nm/min epending on the number of wafers to be processed in the batch.
Uniformity: 16%
Selectivity to SiO2: 3.5
Selectivity to resist: < 1 !

ProgramGas 1 (O2, ml/min)Gas 2 (CF4, ml/min)Power (W) Time (mm:ss) EPD (0, 1, 2) Remarks
213520040000:300
223520040000:500
233520040001:200

Surface activation

ProgramGas 1 (O2, ml/min)Gas 2 (CF4, ml/min)Power (W)Time (mm:ss)EPD (0, 1, 2)Remarks
104000100001:000
114000100000:300
124000100000:150
13400075001:000
14400075000:300
15400075000:150
16400060001:000
17400060000:300
18400060000:150
25200010000:100
26400050000:450
27400050000:300
28400050000:150
29400050000:100
30400050000:050
35400035005:000
36400035000:450
37400035000:300
38400035000:150
39400035000:100
40400035000:050
41400015010:000
42400020010:000
43400020000:300
44400020000:150
45400020000:100
46400020000:050

IV. How to use the system ↑

The substrates are processed following this procedure:

  1. Login on the Tepla plasma stripper on zone 11 computer.
  2. Activate the rectangular green “I” button on the machine
  3. The machine is on stand-by mode (“Idle” mode). Kill this mode by pressing the “abort” button
  4. Prepare the quartz carrier: CAUTION, it is very fragile! Use the fork to delicately manipulate the carrier.
    Reminder: Materials that deteriorate easily upon exposure to oxygen (Ag, Cu, Cr, Fe, …) should not be processed in this machine!
  5. Select the program: press “enter”, use the arrows to make your choice in the menu and press “enter” to validate
    • programs 1 to 8 : resist
    • programs 21 to 23: Si3N4
    • programs 10 to 18 and 25 to 46: surface activation
  6. Start the process by pressing “run” (close the door to start the pumping). You can stop the process at anytime by pressing “abort”
  7. The chamber returns automatically at atmospheric pressure
  8. Take back the quartz carrier (CAUTION, it is hot: delicately use the fork) and your substrates
  9. Check the cleanliness of the chamber
  10. Put the equipment in stand-by mode: press “enter”, use the arrows to select “idle mode” and press “enter” (close the door to start the pumping)
  11. Perform Tepla logout on zone 11 computer

V. Allowed materials ↑

  • Wafers: Si, glass, Pyrex, without metallic layers if possible.
  • Plastics foils: Caution, special holder and limited power (material fusion)

VI. Forbidden processes ↑

Processes that use the following equipments:

  • Zone 3
    • All equipments of 3.
  • Zone 4
    • Deposition at temperature higher than room temperature in SPIDER

These processes must use the Oxford PRS900 (zone 2).