Thin films

LPCVD / Dry or wet oxidation / Alloying / Doping / Diffusion / Densification / Annealing / ALD

Equipement
– 4 x LPCVD tube
– 1-1 polysilicon, amorphous silicon
– 1-2 stoichiometric silicon nitrideSi3N4, low stress silicon nitride SixNy
– 3-1 low temperature oxide (LTO), undoped oxide, PSG, BPSG, BSG
– 3-2 TEOS
– 4 x Oxidation tube
– 2-1 dry oxide, densification
– 2-3 dry oxide, very clean processes for gate oxide
– 2-2 wet oxide
– 3-4 wet or dry oxide or annealing for non-microelectronic compatible processes
– 1 x Diffusion tube
– 2-4 wet oxide, dopants diffusion, tube made of SiC for very high temperature processes (up to 1250°C)
– 1 x Alloying tube
– 1-3 alloying of silicon and aluminum at junctions
– 1 x POCl3 doping tube
– 1-4 “N” doping (Phosphore) of silicon and polysilicon
RCA cleaning mandatory before oxidation & LPCVD
– Location: Zone 3
Documentation
Manual
Responsibles
D. Bouvet
R. Juttin
G. Clerc
J. Pernollet
Equipement
– RCA cleaning mandatory before oxidation & LPCVD
– Non CMOS compatible materials are prohibited in this bench
– Location: Zone 3
Documentation
Manual
Responsibles
D. Bouvet
R. Juttin
J. Pernollet
G. Kumuntu
G. Clerc
Equipement
– Deglazing mandatory immediately after POCl3 doping
– Non CMOS compatible materials are prohibited in this bench
– Location: Zone 3
Documentation
Manual
Responsibles
D. Bouvet
G. Kumuntu
G. Clerc
Equipement
– Thermal deposition
– Plasma assisted deposition
– Ozone generator
– Deposition temperature from 200°C to 450°C
– Location: Zone 4
Documentation
Manual
Responsibles
D. Bouvet
A. Toros
R. Juttin
Equipement
– Thermal deposition
– Plasma assisted deposition
– Ozone generator
– Deposition temperature from 200°C to 450°C
– Location: Zone 4
Documentation
Manual
Responsibles
D. Bouvet
A. Toros
Equipement
– Thermal treatment from 200°C to 1200°C
– N2, O2, NH3 forming gas or vacuum
– From dies to 8” wafers
– Ramp up 100°C/s max
– Location: Zone 3
Documentation
Manual
Responsibles
D. Bouvet
P.A. Madliger

Evaporation

Equipement
– 1 x e-beam gun
– 2 x boat for thermal evaporation
– Up to 15 x 100 mm or 3 x 150 mm wafers
– Location: Zone 4
Documentation
Manual
Responsibles
G. Clerc
Ph. Langlet
Equipement
– 1 x e-beam gun (6 pockets)
– 3 x working distances (450mm / 350mm / 250mm)
– Plasma Ar/O2 for substrate cleaning or activation prior deposition
– Up to 8 x 100 mm or 5 x 150 mm wafers
– Location: Zone 11
Documentation
Manual
Responsibles
R. Juttin
G. Clerc
Ph. Langlet
Equipement
– 1 x e-beam gun (6 pockets)
– 1 x ion source (Ar, O2) for Ion Assisted Deposition (IAD)
– Chamber designed for lift-off evaporation (high distance source-substrates)
– Heaters (evaporation from room temperature and up to 200°C)
– Up to 8 x 100 mm or 4 x 150 mm wafers
– Location: Zone 4
Documentation
Manual
Responsibles
R. Juttin
G. Clerc
Ph. Langlet
Equipement
– 2 x boat for thermal evaporation
– Location: Zone 10
Documentation
Manual
Responsibles
G. Clerc
Equipement
– 3 x boat for thermal evaporation
– Location: Zone 10
Documentation
Manual
Responsibles
G. Clerc

Sputtering

Equipement
– 2 x DC Magnetron
– 1 x RF Magnetron
– 1 x RF-Etch for substrate cleaning prior deposition
– Heaters (sputtering from room temperature and up to 300°C)
– Location: Zone 4
Documentation
Manual
Responsibles
G. Clerc
Ph. Langlet
Equipement
– 2 x DC Magnetron
– 1 x pulsed DC Magnetron
– 1 x RF Magnetron
– 1 x RF-Etch for substrate cleaning prior deposition
– Heaters (sputtering from room temperature and up to 350°C)
– Location: Zone 4
Documentation
Manual
Responsibles
R. Juttin
G. Clerc
Ph. Langlet
Equipement
– 2 x DC/RF Magnetron
– 4 x DC Magnetron
– 1 x Cold post (cold water cooling)
– 1 x Hot post (50°C – 400°C)
– RF-Etch (Ar/O2) for substrate cleaning or activation prior deposition on both posts
– Location: Zone 11
Documentation
Manual
Responsibles
R. Juttin
G. Clerc
Ph. Langlet

Pulsed Laser Deposition

Equipement
– Pulsed Laser Deposition
– Up to 8 inches wafers (Target-dependent)
– 2 x SMP 800 Chambers
– 1 x Pulsed excimer laser (UV – 248 nm)
– Location: Zone 18
Documentation
Manual
Responsibles
R. Juttin

Electroplating / Parylene coating

Equipement
– Wet bench for electroplating of Copper and Nickel
– Chucks for 100mm wafers only
– DC current source up to 2A
– Possibility to heat all baths up to 60°C with thermal control
– Mechanical agitation system for chuck with adjustable speed (back and forth movement)
– Bath consumption measurement device (“Integrateur”)
– Location: Zone 19
Documentation
Manual
Responsibles
D. Bouvet
Equipement
Futur Equipement – Not available in CMi yet
Documentation
Manual
Responsibles
D. Bouvet
Equipement
– Any kind of wafers and samples coating
– Parylene C
– Biocompatible material
– Thickness range from 50nm up to 10um
– Room temperature and double side coating
– Conformal and stress free layer
– Acids, bases and solvents resistant layers
– Location: Zone 10
Documentation
Manual
Responsibles
C. Hibert
M. Marmelo