Photoresists available in CMi

Introduction :

To do a smart choice of photoresist (PR), first answer the following questions:

    • What are the layout critical dimensions (CD), i.e. minimum pattern size ?
    • If the next step is substractive (etching), what is the etching chemistry and what is the etching selectivity with the PR ?
    • If the next step is additive (lift-off), what is the thickness of the material to be deposited and which equipment is used ?
    • Do you have any existing topography on the wafer ?

Then, find a suitable photoresist from the list of i-line resists (to expose on CMi’s mask-aligners and laser writers) or DUV resists (to expose on CMi’s DUV stepper).

Positive i-line (λ = 365nm) resists :

Helpful information
AZ 1512 HS is a thin photoresist designed for fast and reproducible photolithography, with high contrast and high development rate as well as improved substrate adhesion. It is the standard resist choice for photolithography steps with no strict requirements in terms of resolution, sidewall profile or thickness.

Coating Tools :
EVG 150; SSE SB20

Thickness range [µm]:
1.1 … 2.5

Recommended Exposure Tools:
MA6; MLA150

Minimum CD / typical aspect ratio:
~ 1.5um / AR ~ 1:1

Substrate topography:
Planar or very low
CMi process details
More about AZ 1512 HS
Datasheet
AZ 1512 HS
Manufacturer
Merck
Helpful information
AZ ECI 3007 is a thin (0.6 to 1.5 um) chemically amplified i-line photoresist designed for high resolution photolithography and accurate pattern transfer. It is the standard resist choice to reach critical dimensions (CD) < 1um with mask-aligners in vaccum contact mode or the VPG200 laser writer.

Coating Tools :
ACS 200; Ritetrack 88; SSE SB20

Recommended Exposure Tools:
MA6 Gen3; VPG200

Thickness range [µm]:
0.6 … 1.5

Minimum CD / typical aspect ratio:
~ 600nm / AR ~ 1:1

Substrate topography:
Planar or very low
CMi process details
More about AZ ECI 3007
Datasheet
AZ ECI 3007
Manufacturer
Merck
Helpful information
AZ ECI 3027 is a chemically amplified i-line photoresist from the AZ ECI family. With an intermediate thickness range (2 to 5 um), it is a good resist choice for dry-etching applications with moderate etching depth but requiring accurate control of the pattern dimensions.

Coating Tools :
RiteTrack 88; SSE SB20

Recommended Exposure Tools:
MA6 Gen3; VPG200

Thickness range [µm]:
2 … 5

Minimum CD / typical aspect ratio:
~ 1um / AR ~ 2:1

Substrate topography:
Medium
CMi process details
More about AZ ECI 3027
Datasheet
AZ ECI 3027
Manufacturer
Merck
Helpful information
AZ 10XT-07 is a thin diluted photoresist from the AZ 10XT family (which replaces the old AZ9200 line of products). Due to its optimal thermal reflow properties, it is specially and specifically recommended for ion beam etching (IBE) to prevent fencing.

Coating Tools :
ACS 200; SSE SB20

Recommended Exposure Tools:
MA6; MLA150

Thickness range [µm]:
0.7 … 1.9

Minimum CD / typical aspect ratio:
~ 2um / AR ~ 2:1

Substrate topography:
Medium
CMi process details
More about AZ 10XT-07
Datasheet
AZ 10XT-07
Manufacturer
Merck
Helpful information
AZ 10XT-20 is a photoresist from the AZ 10XT family (which replaces the old AZ9200 line of products) with a thickness range from 2um to 4um. It is the standard resist choice for dry etching applications requiring steep sidewalls. Transfer of critical dimensions from the mask/design is not accurate and will require the introduction of CD biases (~800nm).

Coating Tools :
RiteTrack 88; SSE SB20

Recommended Exposure Tools:
MA6; MLA150

Thickness range [µm]:
2 … 4

Minimum CD / typical aspect ratio:
~ 2um / AR ~ 2:1

Substrate topography:
Medium
CMi process details
More about AZ 10XT-20
Datasheet
AZ 10XT-20
Manufacturer
Merck
Helpful information
AZ 10XT-60 is a thick photoresist from the AZ 10XT family (which replaces the old AZ9200 line of products). With steep sidewalls and high aspect ratio, it is the ideal resist choice for deep etching of silicon (Bosch process). Transfer of critical dimensions from the mask/design is not accurate and will require the introduction of CD biases (~800nm).

Coating Tools :
EVG 150; SSE SB20

Recommended Exposure Tools:
MA6; MLA150

Thickness range [µm]:
5.5 … 20

Minimum CD / typical aspect ratio:
~ 3um / AR ~ 4:1

Substrate topography:
High
CMi process details
More about AZ 10XT-60
Datasheet
AZ 10XT-60
Manufacturer
Merck
Helpful information
AZ 40XT is a chemically amplified ultrathick positive photoresist, requiring low exposure doses and with high development rate. The field of applications of the resist starts at 15-30 µm, where photolithography processes with conventional positive resists become very time-consuming due to increasing delays for rehydratation or N2-outgassing, both not required for this resist. This resist is recommended for deep etching in harsh environnment.

Coating Tools :
ACS 200; SSE SB20

Recommended Exposure Tools:
MA6 Gen3; MLA150 (375nm)

Thickness range [µm]:
10 … 40

Minimum CD / typical aspect ratio:
~ 3um / AR ~ 4:1

Substrate topography:
High
CMi process details
More about AZ 40XT
Datasheet
AZ 40XT
Manufacturer
Merck

Lift-off / negative i-line (λ = 365nm) resists:

Helpful information
LOR (Lift-Off Resist) 5A is a polymer which dissolve in alkaline solutions. LOR 5A, used as sacrificial material, can be underetched with standard photoresist developers (TMAH- or KOH-based) just by extending the development time of the imaging top resist. This method is known as the double layer lift-off or bi-layer lift-off. Extreme resist profile can be obtained, enabling efficient lift-off of evaporated or even sputtered material.

Coating Tools :
EVG 150; SSE SB20

Recommended Exposure Tools:
MA6; MLA150

Thickness range [µm]:
0.4 … 1

Minimum CD
~ 2um

Substrate topography:
Planar or very low
CMi process details
More about LOR 5A
Datasheet
LOR 5A
Manufacturer
Kayaku Advanced Material
Helpful information
AZ nLOF 2020 is a negative photoresist, whereby the exposed resist remains after development with an adjustable undercut. The negative profile in combination with its high softening point makes AZ nLOF 2020 a well-suited resist for lift-off aswell as for any other processes requiring resist structures with high to very high thermal stability.

Coating Tools :
EVG 150; SSE SB20

Recommended Exposure Tools:
MA6 Gen3; MLA150 (375nm)

Thickness range [µm]:
1.4 … 3

Minimum CD
~ 1.5um

Substrate topography:
Medium
CMi process details
More about AZ nLOF 2020
Datasheet
AZ nLOF 2020
Manufacturer
Merck

DUV (λ = 248nm) resists :

Helpful information
M108Y (6cP) is a multipurpose thin DUV resist compatible with the ASML PAS5500/350C platform. It is designed for 0.15 µm technology. This high-resolution resist is associated with a bottom anti-reflection coating (DUV 42P BARC) for improved imaging performances. With optimized dose and focus parameters, line & space (L&S) patterns down to 120 nm and iso patterns < 110nm have been demonstrated on DUV exposure equipment.

Coating Tools :
ACS 200

Recommended Exposure Tools:
ASML PAS 5500/350C

Thickness range [µm]:
0.25 … 0.6

Minimum CD / typical aspect ratio:
~ 0.15um / AR ~ 3:1

Substrate topography:
Planar
CMi process details
More about M108Y
Datasheet
M108Y
Manufacturer
JSR Micro NV
Helpful information
M35G (27cP) is a thick DUV resist, designed for 0.25 µm technology. This resist can be used with or without bottom anti-reflection coating (BARC). With optimized dose and focus parameters, line & space (L&S) patterns down to 180 nm and iso patterns < 170nm have been demonstrated on DUV exposure equipment.

Coating Tools :
ACS200

Recommended Exposure Tools:
ASML PAS 5500/350C

Thickness range [µm]:
0.8 … 1.7

Minimum CD / typical aspect ratio:
~ 0.25um / AR ~ 4:1

Substrate topography:
Low
CMi process details
More about M35G
Datasheet
M35G
Helpful information
DUV 42P (6cP) is a thin (~65nm), conformal bottom anti-reflection coating (BARC) that helps reducing standing waves in the exposed DUV resist in order to improve resolution and resist profiles. The film has high absorption at the exposure wavelength (λ = 248nm) to prevent any backside reflections. After the photoresist development step, DUV 42P is etched down with conventional plasma chemistries.

Coating Tools :
ACS200

Recommended Exposure Tools:
NA

Thickness range [µm]:
~65nm

Substrate topography:
Planar or low
Datasheet
DUV 42P
Manufacturer
Brewer Science

Structural resists :

Helpful information
SU-8 photoresist is based on an epoxy resist developed by IBM. SU-8 is a thick (single coating up to 300um), near-UV photoresist (i-line), specifically used for applications requiring high aspect ratios with vertical sidewall profiles. SU-8, after exposure and cross-linking, is resistant to wet chemistry (solvent or base) and cannot be stripped.

Coating Tools :
Sawatec LSM200 or Sawatec LSM250

Recommended Exposure Tools:
MJB4

Thickness range [µm]:
0.8 … 250 (several grades)

Minimum CD / typical aspect ratio:
~ 1um / AR up to 8:1

Substrate topography:
Any
CMi process details
More about SU-8
Datasheet
Please visit CMi Restricted Area
Manufacturers
Gersteltec
Kayaku Advanced Materials
Helpful information
The ORDYL dry film is a negative tone i-line photoresists, rolled over the substrate by hot laminators, and offering high resistance to plating baths and acid etching processes. After exposure it is developed and stripped in alkaline solutions. Although it does not reach the printing resolution of spin-coated photoresists, it offer an interesting alternative for substrate with extremely high topography. CMi offers access to ORDYL 920 and 940 grades from ELGA Europe but dry films from other companies can also be used in CMi.

Coating Tools :
Dry film laminators

Recommended Exposure Tools:
MJB4

Thickness range [µm]:
20 or 40 (other grades available)

Minimum CD / typical aspect ratio:
~ 20um / AR ~1:1

Substrate topography:
Any
Description
More about Ordyl Alpha 920 & Alpha 940
Datasheet
Please visit CMi Restricted Area
Manufacturer
ELGA Europe

Non-photosensitive resists :

Helpful information
Polyimide PI 2610 and PI 2611 are rigid polymers with desirable film properties such as low stress, low thermal expansion (CTE matching silicon) , low moisture uptake, good ductility. It is ideally suited as a dielectric layer for most semiconductor applications requiring thick films or stacked layers of metallization. Patterning is typically done by dry etch or laser ablation techniques.

Coating Tools :
Sawatec LSM200

Recommended Exposure Tools:
NA

Thickness range [µm]:
1 … 10 (several grades)

Substrate topography:
Any
CMi process details
More about PI-2610 & PI-2611
Datasheet
Please visit CMi Restricted Area
Manufacturer
Hitachi DuPont Microsystems