Etching

Ion Beam Etching

Equipement
– Argon ions 350mm broad-beam
– Large range energy capability (50V to 800V)
– High uniformity and high collimation
– Pure physical sputtering of any material
– Low temperature substrate fixture (<90°C)
– Secondary Ions Mass Spectroscopy
– Location: Zone 11
Documentation
Manual
Responsibles
J. Pernollet
C. Hibert
R. Juttin

Plasma Etching

Equipment
– ICP plasma etcher 100mm wafers
– Chlorine and Bromine chemistry
– Electrostatic clamping
– Microelectronic compatible equipment
– Metals etching
– Deep polymer eching
– Si, SiO2 and Si3N4 thin films etching
– Location: Zone 2
Documentation
Manual
Responsibles
J. Pernollet
C. Hibert
R. Juttin
Equipment
– ICP plasma etcher 100mm wafers
– Fluorine chemistry
– Electrostatic clamping
– Non microelectronic compatible equipment
– Si bulk and thin films etching
– Deep Si etching (Bosch process)
– Notch free SOI processing
– Location: Zone 2
Documentation
Manual
Si etching SPC
Responsibles
J. Pernollet
C. Hibert
R. Juttin
Equipment
– ICP plasma etcher 100mm wafers
– Fluorine chemistry
– Electrostatic clamping
– Non microelectronic compatible equipment
– SiO2 and Si3N4 thin films etching
– Deep SiO2 and glasses etching
– Location: Zone 2
Documentation
Manual
SiO2 etching SPC
Responsibles
J. Pernollet
C. Hibert
R. Juttin
Equipment
– Barrel plasma stripper
– Oxygen chemistry
– Microelectronic compatible equipment
– Polymer stripping
– Descuming before wet etching
– Location: Zone 2
Documentation
Manual
Responsibles
J. Pernollet
C. Hibert
R. Juttin
Equipment
– Barrel plasma stripper
– Oxygen chemistry
– Non microelectronic compatible equipment
– Polymer stripping
– Descuming before wet etching
– Location: Zone 11
Documentation
Manual
Responsibles
J. Pernollet
C. Hibert
R. Juttin
Equipment
– Barrel plasma stripper
– Oxygen chemistry
– Non microelectronic compatible equipment
– Polymer stripping
– Descuming before wet etching
– Location: Zone 2
Documentation
Manual
Responsibles
J. Pernollet
C. Hibert
R. Juttin
Equipment
– DRM (Dipole Ring Magnet) – 100mm – RIE with magnetic field assistance
– SCCM (Super Capacitive Coupled Plasma Module) – 200 mm
– Fluorine chemistry
– Electrostatic clamping
– Microelectronic compatible equipment
– SiO2 and Si3N4 thin films etching
– Location: Zone 2
Documentation
Manual
Responsibles
J. Pernollet
C. Hibert
R. Juttin

Gas Etching

Equipment
– 8 inches wafers to piece parts
– HF chemistry
– SiO2 etch – Controllable etch rate (nm/min to um/min)
– Dry process without sticking issues
– Location: Zone 2
Documentation
Manual
Responsibles
J. Pernollet
C. Hibert
R. Juttin
Equipment
– 100mm and piece parts
– XeF2 chemistry
– Si etch
– Location: Zone 11
Documentation
Manual
Responsibles
J. Pernollet
C. Hibert
R. Juttin

Grinding / Polishing

Equipment
– Dielectrics, semiconductors and metals polishing and planarization
– Location: Zone 18/19
Documentation
Manual
Safety
Responsibles
D. Bouvet
Equipment
– Silicon, III/V materials and glass types grinding
– Single wafers, stacked wafers and chips (from a few mm2 to full 8″ wafers)
– Frame mounting on UV-tape
– Disco DCS1440 atomizing cleaning
– Roughness < 100nm, TTV ~ 1micron
– Location: Zone 11
Documentation
Manual
Grinding request
Responsibles
J. Pernollet
C. Hibert

Wet Etching

Equipment
– 100, 150 mm wafers and piece parts
– Sulphuric acid with peroxide (100°C)
– Organic residue cleaning
Documentation
Manual
Safety
Available holders
Empty bottles
Responsibles
J. Pernollet
C. Hibert
R. Juttin
Equipment
– 100, 150 mm wafers and piece parts
– Remover 1165 (70°C)
– Photoresist strip
– Location: Zone 2
Documentation
Manual
Safety
Available holders
Responsibles
J. Pernollet
C. Hibert
R. Juttin
Equipment
– 100, 150 mm wafers and piece parts
– HF and BHF chemistry
– SiO2 and fused silica etch
– Pyrex and float glass etch
– Location: Zone 2
Documentation
Manual
Safety
Available holders
Responsibles
J. Pernollet
C. Hibert
R. Juttin
Equipment
– 100, 150 mm wafers and piece parts
– Aluminium etch
– Titanium etch (HF 1%)
– Pad etch
– Polysilicon etch
– Location: Zone 2
Documentation
Manual
Safety
Available holders
Responsibles
J. Pernollet
C. Hibert
R. Juttin
Equipment
– 100, 150 mm wafers and piece parts
– 100 mm chuck to protect wafer back side
– KOH chemistry (23%/90°C and 40%/60°C)
– Silicon anisotropic etch
– Location: Zone 18/19
Documentation
Manual
Protek protective stop layer
Safety
Available holders
Responsibles
J. Pernollet
C. Hibert
R. Juttin
Equipment
– 100, 150 mm wafers and piece parts
– Supercritical point dryer to limit sticking issues
– Location: Zone 14
Documentation
Manual
Responsibles
J. Pernollet
C. Hibert
Equipment
– 100 mm wafers and piece parts
– Multiple acids chemistry
– SiO2, fused silica, Al2O3 etch
– Pyrex and float glass etch
– Al, Ti, Ni, Au, Cr, Cu, Pt etch
– Location: Zone 14
Documentation
Manual
Safety
Available holders
Empty bottles
Responsibles
J. Pernollet
C. Hibert
R. Juttin
Equipment
– 100 mm wafers and piece parts
– Multiple bases chemistry
– Si etch
– RCA 1 cleaning
– Location: Zone 14
Documentation
Manual
Safety
Available holders
Empty bottles
Responsibles
J. Pernollet
C. Hibert
R. Juttin
Equipment
– 100 mm wafers and piece parts
– Multiple solvents chemistry
– Silanisation prior parylene deposition
– Solvent cleaning
– Ultrasonic treatment
– Location: Zone 14
Documentation
Manual
Safety
Available holders
Empty bottles
Responsibles
J. Pernollet
C. Hibert
R. Juttin