180nm CMOS Parameters

EKV v301.01 indicative data

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***  EKV v301.01 indicative parameters for 180nm CMOS (C) MB 2007
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* Intrinsic paremeters for a n-mosfet are based on [3] and *NOT* intended 
* for use in real design. The set includes all intrinsic model parameters.
* Use of extrinsic model parameters and models (series resistance, 
* junction currents and capacitances) is in general simulator-dependent.
* Parameters do *NOT* correspond to a particular technology but
* have reasonable values for standard 180nm CMOS.

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*  [3] M. Bucher, D. Diamantakos, A. Bazigos and F. Krummenacher 
*      Design-oriented Characterization and Parameter Extraction 
*      Methodologies for the EKV3 MOSFET Model”,
*      WCM NSTI NANOTECH 2007 Santa Clara, California, May 21-24, 2007
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*
.MODEL NMOS180 NMOS 
* Flags              
+ SIGN = 1 TG = -1             
* Scale parameters        
+ SCALE = 1.0 XL = 0.0 XW = 0.0            
* Cgate parameters        
+ COX = 8.58E-3 GAMMAG = 18.4 AQMA = 0.0 AQMI = 0.0 ETAQM = 0.75          
* Nch. parameters         
+ VTO = 400.0E-3 PHIF = 450.0E-3 GAMMA = 300.0E-3 XJ = 30.0E-9 N0 = 1.025           
* Mobility            
+ KP = 390.0E-6 E0 = 438.0E+6 E1 = 159.0E+6 ETA = 0.57 ZC = 1.0E-6 THC = 0.0            
* Source and Drain Charge Sharing       
+ LETA0 = 1.0E+6 LETA = 1.3 LETA2 = 0.0 WETA = 1.0 NCS = 0.5
* DIBL (Drain Induced Barrier Lowering)
+ ETAD = 0.75 SIGMAD = 1.0
* RSCE (Reverse Short Channel Effect)
+ LR = 100E-9 QLR = 580E-6 NLR = 100.0E-3 FLR = 2
* INWE (Inverse Narrow Width Effect)
+ WR = 80.0E-9 QWR = 500.0E-6 NWR = 12.0E-3      
* Series resistance
+ RLX = 170.0E-6     
* Overlap & fringing    
+ LOV = 25.0E-9 GAMMAOV = 5.0 VFBOV = 0.0 KJF = 150.0E-12 CJF = 300.0E-3       
* Long-ch. gds degr.        
+ PDITS = 2.58E-6 PDITSD = 0.91 PDITSL = 0.0 FPROUT = 1.85E+6 DDITS = 0.1            
* Matching par.           
+ AVTO = 0.0 AKP = 0.0 AGAMMA = 0.0           
* Vsat & CLM (Channel Length Modulation)          
+ UCRIT = 5.0E+6 DELTA = 1.5 LAMBDA = 0.5 ACLM = 0.85              
* Gate current (IGS, IGD, IGB)        
+ KG = 50.0E-6 XB = 5.5 EB = 21.0E+9 LOVIG = 40.0E-12
* Temperature par. scaling    
+ TNOM = 30.0 TCV = 600.0E-6 BEX = -1.6 TE0EX = -4.15 TE1EX = 0.0
+ TETA = 2.0E-3 UCEX = 1.2 TLAMBDA = 0.15 TCVL = 0.0 TCVW = 0.0 TCVWL = 0.0
* Geometrical par. scaling         
+ DL = -16.7E-9 DLC = -23.0E-9 LL = 0.0             
+ DW = -45.3E-9 DWC = 0.0 LDW = 0.0 WDL = 0.0 LLN = 1.0 
*
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