In this research line we explore the circuit and technology challenges associated to the integration of emerging technologies and concepts inside memory architectures. Indeed, with the arrival of the Edge AI concept, the energy efficiency bottleneck moves towards memories which now need to be big and provide a large throughput. Hence, in this research line, we propose to work towards two directions :
- the integration of emerging resistive memory technologies and
- the integration of SIMD operators inside SRAM memories.