Our mission is to innovate semiconductor devices with nanoscale design of high-performance materials to exploit their unique properties and conceive new, drastically more efficient devices that outperform the state-of-the-art.

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Latest publications

Fully Soft-Switched High Step-Up Nonisolated Three-Port DC-DC Converter Using GaN HEMTs

R. Faraji; H. Farzanehfard; G. Kampitsis; M. Mattavelli; E. Matioli et al. 

Ieee Transactions On Industrial Electronics. 2020-10-01. Vol. 67, num. 10, p. 8371-8380. DOI : 10.1109/TIE.2019.2944068.

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

R. F. P. van Erp; G. Kampitsis; L. Nela; R. Soleiman Zadeh Ardebili; E. Matioli 

2020-09-10. 2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), Orlando, FL, USA, USA, July 21-23, 2020. p. 53-59. DOI : 10.1109/ITherm45881.2020.9190356.

Co-designing electronics with microfluidics for more sustainable cooling

R. F. P. van Erp; R. Soleiman Zadeh Ardebili; L. Nela; G. Kampitsis; E. Matioli 

Nature. 2020-09-09. Vol. 585, num. 7824, p. 211-216. DOI : 10.1038/s41586-020-2666-1.

Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs

M. Zhu; J. Ma; E. Matioli 

2020-08-18. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, September 13-18, 2020. p. 345-348. DOI : 10.1109/ISPSD46842.2020.9170183.

High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs

L. Nela; G. Kampitsis; h. yildirim; R. F. P. van Erp; J. Ma et al. 

2020-08-18. 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Septembre 13-18, 2020. DOI : 10.1109/ISPSD46842.2020.9170092.

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