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New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors
IEEE Transactions on Power Electronics. 2019-12-06. p. 1-1. DOI : 10.1109/TPEL.2019.2958000.Fast-switching Tri-Anode Schottky Barrier Diodes for monolithically integrated GaN-on-Si power circuits
IEEE Electron Device Letters. 2019-12-04. Vol. 41, num. 1. DOI : 10.1109/LED.2019.2957700.H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon
IEEE Electron Device Letters. 2019-11-13. p. 1-1. DOI : 10.1109/LED.2019.2953245.Near-junction heat spreaders for hot spot thermal management of high power density electronic devices
Journal of Applied Physics. 2019-10-30. Vol. 126, num. 16, p. 165113. DOI : 10.1063/1.5123615.Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance
IEEE Transactions on Power Electronics. 2019-09-02. p. 1-1. DOI : 10.1109/TPEL.2019.2938922.Impact of Fin Width on Tri-Gate GaN MOSHEMTs
IEEE Transactions on Electron Devices. 2019-09-01. Vol. 66, num. 9, p. 4068-4074. DOI : 10.1109/TED.2019.2925859.High-performance normally-off tri-gate GaN power MOSFETs
2019-07-11. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 19-23 May 2019. p. 71-74. DOI : 10.1109/ISPSD.2019.8757690.High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance
IEEE Electron Device Letters. 2019-06-12. Vol. 40, num. 8, p. 1289-1292. DOI : 10.1109/LED.2019.2922204.GaN Transistors for Miniaturized Pulsed-Power Sources
IEEE Transactions on Plasma Science. 2019-06-06. Vol. 47, num. 7, p. 3241-3245. DOI : 10.1109/TPS.2019.2917657.On the Dynamic Performance of Laterally Gated Transistors
IEEE Electron Device Letters. 2019-05-30. Vol. 40, num. 7, p. 1171-1174. DOI : 10.1109/LED.2019.2920116.Funding
