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Our mission is to innovate semiconductor devices with nanoscale design of high-performance materials to exploit their unique properties and conceive new, drastically more efficient devices that outperform the state-of-the-art.

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News

Best presentation award at APEC 2019

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Read moresur Tech Transfer.

Remco van Erp receives the best presentation award at APEC 2019 on the work: A manifold microchannel heat sink for ultra-high power density liquid-cooled converters, presented in March 2019.

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High Power Density Magnetic-Less DC–DC Converters

NewsEPFL

Our work on “Ultra-High Power Density Magnetic-Less dc–dc Converter Using GaN Transistors,” presented by Dr. Georgios Kampitsis at APEC 2019 was featured at the IEEE POWER ELECTRONICS MAGAZINE

First fully vertical gallium nitride transistors on silicon

NewsEPFL

Our work on the first demonstration of fully vertical gallium nitride transistors on silicon was featured in Semiconductor Today magazine

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Latest publications

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

R. Soleimanzadeh; M. Naamoun; R. A. Khadar; R. van Erp; E. Matioli 

IEEE Electron Device Letters. 2019-11-13.  p. 1-1. DOI : 10.1109/LED.2019.2953245.

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Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

R. Soleimanzadeh; R. A. Khadar; M. Naamoun; R. van Erp; E. Matioli 

Journal of Applied Physics. 2019-10-30. Vol. 126, num. 16, p. 165113. DOI : 10.1063/1.5123615.

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Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

IEEE Transactions on Power Electronics. 2019-09-02.  p. 1-1. DOI : 10.1109/TPEL.2019.2938922.

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Impact of Fin Width on Tri-Gate GaN MOSHEMTs

J. Ma; G. Santoruvo; L. Nela; T. Wang; E. Matioli 

IEEE Transactions on Electron Devices. 2019-09-01. Vol. 66, num. 9, p. 4068-4074. DOI : 10.1109/TED.2019.2925859.

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High-performance normally-off tri-gate GaN power MOSFETs

M. Zhu; J. Ma; L. Nela; E. Matioli 

2019-07-11. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 19-23 May 2019. p. 71-74. DOI : 10.1109/ISPSD.2019.8757690.

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High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

M. Zhu; J. Ma; L. Nela; C. Erine; E. Matioli 

IEEE Electron Device Letters. 2019-06-12. Vol. 40, num. 8, p. 1289-1292. DOI : 10.1109/LED.2019.2922204.

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GaN Transistors for Miniaturized Pulsed-Power Sources

M. Samizadeh Nikoo; A. Jafari; E. Matioli 

IEEE Transactions on Plasma Science. 2019-06-06. Vol. 47, num. 7, p. 3241-3245. DOI : 10.1109/TPS.2019.2917657.

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On the Dynamic Performance of Laterally Gated Transistors

M. Samizadeh Nikoo; G. Santoruvo; C. Erine; A. Jafari; E. Matioli 

IEEE Electron Device Letters. 2019-05-30. Vol. 40, num. 7, p. 1171-1174. DOI : 10.1109/LED.2019.2920116.

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Ultra-High Power Density Magnetic-less DC/DC Converter Utilizing GaN Transistors

G. Kampitsis; R. v. Erp; E. Matioli 

2019-05-27. 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), Anaheim, CA, USA, 17-21 March, 2019. p. 1609-1615. DOI : 10.1109/APEC.2019.8721783.

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Enhanced transformation of sulfonamide antibiotics by manganese(IV) oxide in the presence of model humic constituents

Y. Song; J. Jiang; J. Ma; Y. Zhou; U. von Gunten 

Water Research. 2019-04-15. Vol. 153, p. 200-207. DOI : 10.1016/j.watres.2019.01.011.

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