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Our mission is to innovate semiconductor devices with nanoscale design of high-performance materials to exploit their unique properties and conceive new, drastically more efficient devices that outperform the state-of-the-art.

Research

POWERlab news

Therminic best paper award

19-10-2020

Awarded to Remco van Erp at the 2020 International Workshop on Thermal Investigations of ICs and Systems (Therminic). Congratulations Remco!

IEEE ISPSD Charitat Award

19-10-2020

Awarded to Luca Nela, as the best paper presented at the International Symposium on Power Semiconductor Devices and ICs. Congratulations Luca!

Nature paper

19-10-2020

Our paper on embedded microchannel cooling was published in Nature and featured in many news outlets: Scientific American – Le Figaro – Le Temps – NRC – IEEE Spectrum – New Scientist – Nature podcast – Olhar Digital – RTSCongratulations Remco!

Marie Skłodowska-Curie actions fellowship

19-10-2020

Awarded to Georgios Kampitsis to move to the Imperial College – UK. Congratulations George!

 

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News

© 2020 EPFL

Transistor-integrated cooling for a more powerful chip

  • News
  • EPFL
Read moresur Tech Transfer.

EPFL researchers have created a single chip that combines a transistor and micro-fluidic cooling system. Their research, which has been published in Nature, should help save energy and further shrink the size of electronic components.

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A nanoscale device that can see through walls

NewsResearch

Researchers at EPFL have developed a nanodevice that operates more than 10 times faster than today’s fastest transistors, and about 100 times faster than the transistors you have on your computers. This new device enables the generation of high-power terahertz waves. These waves, which are notoriously difficult to produce, are useful in a rich variety of applications ranging from imaging and sensing to high-speed wireless communications. The high-power picosecond operation of these device also hold immense promise to some advanced medical treatment techniques such as cancer therapy. The team’s pioneering compact source, described today in Nature, paves the way for untold new applications.

Multi-channel power transistors shape up

NewsEPFL

Our IEDM 2019 paper has been featured in Nature Electronics: A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance.

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Latest publications

Fully Soft-Switched High Step-Up Nonisolated Three-Port DC-DC Converter Using GaN HEMTs

R. Faraji; H. Farzanehfard; G. Kampitsis; M. Mattavelli; E. Matioli et al. 

Ieee Transactions On Industrial Electronics. 2020-10-01. Vol. 67, num. 10, p. 8371-8380. DOI : 10.1109/TIE.2019.2944068.

Detailed record

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Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

R. F. P. van Erp; G. Kampitsis; L. Nela; R. Soleiman Zadeh Ardebili; E. Matioli 

2020-09-10. 2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), Orlando, FL, USA, USA, July 21-23, 2020. p. 53-59. DOI : 10.1109/ITherm45881.2020.9190356.

Detailed record

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Co-designing electronics with microfluidics for more sustainable cooling

R. F. P. van Erp; R. Soleiman Zadeh Ardebili; L. Nela; G. Kampitsis; E. Matioli 

Nature. 2020-09-09. Vol. 585, num. 7824, p. 211-216. DOI : 10.1038/s41586-020-2666-1.

Detailed record

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Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs

M. Zhu; J. Ma; E. Matioli 

2020-08-18. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, September 13-18, 2020. p. 345-348. DOI : 10.1109/ISPSD46842.2020.9170183.

Detailed record

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High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs

L. Nela; G. Kampitsis; h. yildirim; R. F. P. van Erp; J. Ma et al. 

2020-08-18. 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Septembre 13-18, 2020. DOI : 10.1109/ISPSD46842.2020.9170092.

Detailed record

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