Our mission is to innovate semiconductor devices with nanoscale design of high-performance materials to exploit their unique properties and conceive new, drastically more efficient devices that outperform the state-of-the-art.

 

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Latest publications

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

R. Soleimanzadeh; M. Naamoun; R. A. Khadar; R. van Erp; E. Matioli 

IEEE Electron Device Letters. 2019-11-13.  p. 1-1. DOI : 10.1109/LED.2019.2953245.

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

R. Soleimanzadeh; R. A. Khadar; M. Naamoun; R. van Erp; E. Matioli 

Journal of Applied Physics. 2019-10-30. Vol. 126, num. 16, p. 165113. DOI : 10.1063/1.5123615.

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

IEEE Transactions on Power Electronics. 2019-09-02.  p. 1-1. DOI : 10.1109/TPEL.2019.2938922.

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

J. Ma; G. Santoruvo; L. Nela; T. Wang; E. Matioli 

IEEE Transactions on Electron Devices. 2019-09-01. Vol. 66, num. 9, p. 4068-4074. DOI : 10.1109/TED.2019.2925859.

High-performance normally-off tri-gate GaN power MOSFETs

M. Zhu; J. Ma; L. Nela; E. Matioli 

2019-07-11. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 19-23 May 2019. p. 71-74. DOI : 10.1109/ISPSD.2019.8757690.

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

M. Zhu; J. Ma; L. Nela; C. Erine; E. Matioli 

IEEE Electron Device Letters. 2019-06-12. Vol. 40, num. 8, p. 1289-1292. DOI : 10.1109/LED.2019.2922204.

GaN Transistors for Miniaturized Pulsed-Power Sources

M. Samizadeh Nikoo; A. Jafari; E. Matioli 

IEEE Transactions on Plasma Science. 2019-06-06. Vol. 47, num. 7, p. 3241-3245. DOI : 10.1109/TPS.2019.2917657.

On the Dynamic Performance of Laterally Gated Transistors

M. Samizadeh Nikoo; G. Santoruvo; C. Erine; A. Jafari; E. Matioli 

IEEE Electron Device Letters. 2019-05-30. Vol. 40, num. 7, p. 1171-1174. DOI : 10.1109/LED.2019.2920116.

Ultra-High Power Density Magnetic-less DC/DC Converter Utilizing GaN Transistors

G. Kampitsis; R. v. Erp; E. Matioli 

2019-05-27. 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), Anaheim, CA, USA, 17-21 March, 2019. p. 1609-1615. DOI : 10.1109/APEC.2019.8721783.

Enhanced transformation of sulfonamide antibiotics by manganese(IV) oxide in the presence of model humic constituents

Y. Song; J. Jiang; J. Ma; Y. Zhou; U. von Gunten 

Water Research. 2019-04-15. Vol. 153, p. 200-207. DOI : 10.1016/j.watres.2019.01.011.

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