Our mission is to innovate semiconductor devices with nanoscale design of high-performance materials to exploit their unique properties and conceive new, drastically more efficient devices that outperform the state-of-the-art.

 

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Latest publications

Fully Soft-Switched High Step-Up Nonisolated Three-Port DC-DC Converter Using GaN HEMTs

R. Faraji; H. Farzanehfard; G. Kampitsis; M. Mattavelli; E. Matioli et al. 

Ieee Transactions On Industrial Electronics. 2020-10-01. Vol. 67, num. 10, p. 8371-8380. DOI : 10.1109/TIE.2019.2944068.

Output Capacitance Losses in Wide-Band-Gap Transistors: A Small-Signal Modeling Approach

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

2020-08-18. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). p. 190-193. DOI : 10.1109/ISPSD46842.2020.9170093.

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes

L. Nela; R. F. P. van Erp; G. Kampitsis; H. K. Yildirim; J. Ma et al. 

IEEE Transactions on Power Electronics. 2020-07-09. DOI : 10.1109/TPEL.2020.3008226.

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

N. Perera; G. Kampitsis; R. Van Erp; J. Ancay; A. Jafari et al. 

IEEE Journal of Emerging and Selected Topics in Power Electronics. 2020-05-06.  p. 1-1. DOI : 10.1109/JESTPE.2020.2992946.

Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

N. Perera; M. Samizadeh Nikoo; A. Jafari; L. Nela; E. Matioli 

IEEE Transactions on Power Electronics. 2020-04-27. Vol. 35, num. 12, p. 1-1. DOI : 10.1109/TPEL.2020.2990370.

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