Publications

2024

Chip-Scale Watt-Range Terahertz Generation Based on Fast Transition in Nanoplasma Switches

M. Rezaei; E. Matioli; M. Rezaei; E. Matioli 

IEEE Electron Device Letters. 2024. Vol. 45, num. 6, p. 1072-1075. DOI : 10.1109/LED.2024.3387066.

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

A. Floriduz; Z. Hao; E. Matioli 

IEEE Electron Devices Letters. 2024-04-29. DOI : 10.1109/LED.2024.3395112.

2023

Measurement of WBG-based power supplies

H. Zhu; A. Jafari; K. Machtinger; M. Makoschitz; E. Matioli 

2023-01-01. 25th European Conference on Power Electronics and Applications (EPE ECCE Europe), Aalborg, DENMARK, SEP 04-08, 2023.

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

E. Matioli; H. Zhu; N. Perera; M. S. Nikoo; A. Jafari et al. 

2023-01-01. 25th European Conference on Power Electronics and Applications (EPE ECCE Europe), Aalborg, DENMARK, SEP 04-08, 2023. DOI : 10.23919/EPE23ECCEEurope58414.2023.10264510.

Electronic metadevices for terahertz applications

M. S. Nikoo; E. Matioli 

Nature. 2023-02-16. Vol. 614, num. 7948, p. 451-+. DOI : 10.1038/s41586-022-05595-z.

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

H. Zhu; E. Matioli 

IEEE Transactions on Power Electronics. 2023-04-20. DOI : 10.1109/TPEL.2023.3268890.

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

S. Bhadoria; F. Dijkhuizen; R. Raj; X. Wang; Q. Xu et al. 

Ieee Transactions On Power Electronics. 2023-03-01. Vol. 38, num. 3, p. 3569-3589. DOI : 10.1109/TPEL.2022.3223730.

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

M. Samizadeh Nikooytabalvandani / E. d. N. Matioli (Dir.)  

Lausanne, EPFL, 2023. 

2022

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

A. Floriduz; E. Matioli 

Japanese Journal Of Applied Physics. 2022-11-01. Vol. 61, num. 11, p. 118003. DOI : 10.35848/1347-4065/ac980f.

A Generalized Phase-Shift PWM Extension for Improved Natural and Active Balancing of Flying Capacitor Multilevel Inverters

G. Kampitsis; E. Batzelis; A. Kolokasis; E. Matioli; B. C. Pal 

Ieee Open Journal Of Power Electronics. 2022-01-01. Vol. 3, p. 621-634. DOI : 10.1109/OJPEL.2022.3209540.

Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing

M. Samizadeh Nikoo; R. Soleiman; A. Krammer; G. Migliato Marega; Y. Park et al. 

Nature Electronics. 2022-08-22. DOI : 10.1038/s41928-022-00812-z.

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

T. Wang / E. d. N. Matioli (Dir.)  

Lausanne, EPFL, 2022. 

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

T. Wang; Y. Zong; L. Nela; E. Matioli 

IEEE Electron Device Letters. 2022.  p. 1-1. DOI : 10.1109/LED.2022.3189635.

Nanoplasma-based Millimiter-wave Modulators on a Single Metal Layer

M. Samizadeh Nikoo; M. O. Dilmaghanian; F. Farzaneh; E. Matioli 

IEEE Electron Device Letters. 2022-06-30.  p. 1-1. DOI : 10.1109/LED.2022.3187456.

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

R. F. P. van Erp / E. d. N. Matioli (Dir.)  

Lausanne, EPFL, 2022. 

A perspective on multi-channel technology for the next-generation of GaN power devices

L. Nela; M. Xiao; Y. Zhang; E. Matioli 

Applied Physics Letters. 2022-05-09. Vol. 120, num. 19, p. 190501. DOI : 10.1063/5.0086978.

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

A. Floriduz; E. Matioli 

Japanese Journal Of Applied Physics. 2022-04-01. Vol. 61, num. 4, p. 048002. DOI : 10.35848/1347-4065/ac54fe.

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

L. Nela / E. d. N. Matioli (Dir.)  

Lausanne, EPFL, 2022. 

Beyond 8 THz Displacement-field Nano-switches for 5G and 6G Communications

M. Samizadeh Nikoo; T. Wang; P. Sohi; M. Zhu; F. Qaderi et al. 

2022-03-09. 67th Annual IEEE International Electron Devices Meeting (IEDM 2021), San Francisco, CA, USA, December 11-16, 2021. p. 4.5.1-4.5.4. DOI : 10.1109/IEDM19574.2021.9720575.

Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance

P. S. N. Perera / E. d. N. Matioli (Dir.)  

Lausanne, EPFL, 2022. 

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

L. Nela; C. Erine; A. Miran Zadeh; E. Matioli 

IEEE Transactions on Electron Devices. 2022-03-03. Vol. 69, p. 1798-1804. DOI : 10.1109/TED.2022.3151558.

2021

Microchannel-based Calorimeter for Rapid and Accurate Loss Measurements on High-efficiency Power Converters

R. van Erp; N. Perera; E. Matioli 

2021-01-01. 13th IEEE Energy Conversion Congress and Exposition (IEEE ECCE), ELECTR NETWORK, Oct 10-14, 2021. p. 5709-5715. DOI : 10.1109/ECCE47101.2021.9595598.

GaN-based power devices: Physics, reliability, and perspectives

M. Meneghini; C. De Santi; I. Abid; M. Buffolo; M. Cioni et al. 

Journal Of Applied Physics. 2021-11-08. Vol. 130, num. 18, p. 181101. DOI : 10.1063/5.0061354.

Hard-Switching Losses in Power FETs: The Role of Output Capacitance

N. Perera; A. Jafari; R. Soleiman; N. Bollier; S. G. Abeyratne et al. 

IEEE Transactions on Power Electronics. 2021-11-25. Vol. 37, num. 7, p. 7604-7616. DOI : 10.1109/TPEL.2021.3130831.

Embedded Microchannel Cooling for Monolithically-integrated GaN Half-bridge ICs

R. van Erp; N. Perera; L. Nela; E. Matioli 

2021-01-01. 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), ELECTR NETWORK, Sep 23, 2021. DOI : 10.1109/THERMINIC52472.2021.9626476.

Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters

N. Perera; R. van Erp; J. Ancay; A. Jafari; E. Matioli 

2021-11-16. IEEE Energy Conversion Congress and Exposition (ECCE 2021), Vancouver, BC, Canada, October 10-14, 2021. p. 5312-5319. DOI : 10.1109/ECCE47101.2021.9594950.

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

L. Nela; C. Erine; E. Matioli 

Applied Physics Letters. 2021-12-29. Vol. 119, num. 26, p. 263508. DOI : 10.1063/5.0074543.

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

L. Nela; C. Erine; M. V. Oropallo; E. Matioli 

IEEE Journal of the Electron Devices Society. 2021-11-08. Vol. 9, p. 1066-1075. DOI : 10.1109/JEDS.2021.3125742.

Radio Frequency Temperature Transducers Based On Insulator-Metal Phase Transition In Vo2 And Ge-Doped Vo2 Ald Thin Films

A. A. Muller; R. Khadar; K. M. Niang; G. Bai; E. Matioli et al. 

2021-01-01. 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), ELECTR NETWORK, Jun 20-25, 2021. p. 1355-1358. DOI : 10.1109/TRANSDUCERS50396.2021.9495498.

Heterostructure design and field management in III-N high-electron mobility electronic devices

C. Erine / E. d. N. Matioli (Dir.)  

Lausanne, EPFL, 2021. 

Diamond on GaN integration for power semiconductor devices with efficient thermal management

R. Soleiman Zadeh Ardebili / E. d. N. Matioli (Dir.)  

Lausanne, EPFL, 2021. 

Seed Dibbling Method for the Grow of High-Quality Diamond on GaN

R. Soleimanzadeh; M. Naamoun; A. Floriduz; R. A. Khadar; R. van Erp et al. 

Acs Applied Materials & Interfaces. 2021-09-15. Vol. 13, num. 36, p. 43516-43523. DOI : 10.1021/acsami.1c08761.

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

L. Nela; R. F. P. van Erp; N. Perera; A. Jafari; C. Erine et al. 

IEEE Electron Device Letters. 2021-09-20. Vol. 42, num. 11, p. 1642-1645. DOI : 10.1109/LED.2021.3114056.

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

T. Wang; M. S. Nikoo; L. Nela; E. Matioli 

2021-01-01. 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, JAPAN, May 30-Jun 03, 2021. p. 135-138. DOI : 10.23919/ISPSD50666.2021.9452252.

p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices

R. A. Khadar; A. Floriduz; T. Wang; C. Erine; R. van Erp et al. 

2021-01-01. 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, JAPAN, May 30-Jun 03, 2021. p. 147-150. DOI : 10.23919/ISPSD50666.2021.9452255.

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

L. Nela; C. Erine; J. Ma; H. K. Yildirim; R. F. P. van Erp et al. 

2021-06-15. 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, May 30-Jun 03, 2021. p. 143-146. DOI : 10.23919/ISPSD50666.2021.9452238.

p-NiO junction termination extensions for GaN power devices

R. A. Khadar; A. Floriduz; T. Wang; E. Matioli 

Applied Physics Express. 2021-07-01. Vol. 14, num. 7, p. 071006. DOI : 10.35848/1882-0786/ac09ff.

Integrated electronic device with embedded microchannels and a method for producing thereof

E. D. N. Matioli; R. F. P. Van Erp 

US2023037442; EP4078672; WO2021121560.

2021.

Pushing the Limits of Efficiency and Power Density in High-Frequency Power Conversion Based on Wide-Band-Gap Technologies

A. Jafari / E. d. N. Matioli (Dir.)  

Lausanne, EPFL, 2021. 

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

P. Sohi; Carlin; M. D. Rossell; R. Erni; N. Grandjean et al. 

Semiconductor Science And Technology. 2021-05-01. Vol. 36, num. 5, p. 055020. DOI : 10.1088/1361-6641/abf3a7.

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

R. Abdul Khadar; A. Floriduz; C. Liu; R. Soleimanzadeh; E. Matioli 

Applied Physics Express. 2021-04-01. Vol. 14, num. 4, p. 046503. DOI : 10.35848/1882-0786/abf054.

Multi-channel nanowire devices for efficient power conversion

L. Nela; J. Ma; C. Erine; P. Xiang; T. -H. Shen et al. 

Nature Electronics. 2021-03-25. Vol. 4, p. 284–290. DOI : 10.1038/s41928-021-00550-8.

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

L. Nela; N. Perera; C. Erine; E. Matioli 

Ieee Transactions On Power Electronics. 2021-07-01. Vol. 36, num. 7, p. 7412-7416. DOI : 10.1109/TPEL.2020.3047466.

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

M. Zhu / E. d. N. Matioli (Dir.)  

Lausanne, EPFL, 2021. 

Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies (vol 35, pg 12595, 2020)

A. Jafari; M. Samizadeh Nikoo; N. Perera; H. K. Yildirim; F. Karakaya et al. 

Ieee Transactions On Power Electronics. 2021-02-01. Vol. 36, num. 2, p. 2444-2445. DOI : 10.1109/TPEL.2020.3017073.

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

M. Zhu; C. Erine; J. Ma; M. S. Nikoo; L. Nela et al. 

Ieee Electron Device Letters. 2021-01-01. Vol. 42, num. 1, p. 82-85. DOI : 10.1109/LED.2020.3037026.

Kilowatt-range Picosecond Switching Based on Microplasma Devices

M. Samizadeh Nikoo; A. Jafari; R. Van Erp; E. Matioli 

IEEE Electron Device Letters. 2021-03-24.  p. 1-1. DOI : 10.1109/LED.2021.3068732.

Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

M. Samizadeh Nikoo; A. Jafari; N. Perera; H. K. Yildirim; E. Matioli 

2021-03-09. 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia), Nanjing, China, 29 Nov.-2 Dec. 2020. DOI : 10.1109/IPEMC-ECCEAsia48364.2020.9367884.

Enhanced-DAB Converter: Comprehensive Design Evaluation

A. Jafari; M. Samizadeh Nikoo; F. Karakaya; E. Matioli 

2021-03-09. 2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia), Nanjing, China, 29 Nov.-2 Dec. 2020. p. 1844-1851. DOI : 10.1109/IPEMC-ECCEAsia48364.2020.9368193.

Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs

M. Samizadeh Nikoo; R. A. Khadar; A. Jafari; M. Zhu; E. Matioli 

IEEE Electron Device Letters. 2021-03-04.  p. 1-1. DOI : 10.1109/LED.2021.3064021.

Parallel PV Configuration with Magnetic-Free Switched Capacitor Module-Level Converters for Partial Shading Conditions

G. Kampitsis; E. Batzelis; R. F. P. van Erp; E. Matioli 

Energies. 2021-01-15. Vol. 14, num. 2, p. 456. DOI : 10.3390/en14020456.

GaN vertical power devices on silicon substrates

R. M. Abdul Khadar / E. d. N. Matioli (Dir.)  

Lausanne, EPFL, 2021. 

Optimized kW-Range Boost Converter Based on Impulse Rectification with 52 kW/l and 98.6% Efficiency

A. Jafari; M. Samizadeh Nikoo; R. Van Erp; E. Matioli 

IEEE Transactions on Power Electronics. 2021. Vol. 36, num. 7, p. 7389-7394. DOI : 10.1109/TPEL.2020.3045062.

2020

Analysis of Output Capacitance Co-Energy and Discharge Losses in Hard-Switched FETs

N. Perera; N. Bollier; E. Figini; R. Soleimanzadeh; R. van Erp et al. 

2020-01-01. IEEE 9th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia), Nanjing, PEOPLES R CHINA, Nov 29-Dec 02, 2020. p. 52-59. DOI : 10.1109/IPEMC-ECCEAsia48364.2020.9367701.

Mixed Simulation-Experimental Optimization of a Modular Multilevel Switched Capacitors Converter Cell

G. Kampitsis; M. Chevron; R. van Erp; N. Perera; S. Papathanassiou et al. 

2020-01-01. IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL), Aalborg, DENMARK, Nov 09-12, 2020. p. 883-888. DOI : 10.1109/COMPEL49091.2020.9265665.

Co-designing electronics with microfluidics for more sustainable cooling

R. van Erp; R. Soleimanzadeh; L. Nela; G. Kampitsis; E. Matioli 

Nature. 2020-09-09. Vol. 585, num. 7824, p. 211-216. DOI : 10.1038/s41586-020-2666-1.

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

L. Nela; H. K. Yildirim; C. Erine; R. F. P. van Erp; P. Xiang et al. 

IEEE Electron Device Letters. 2020-11-17. Vol. 42, num. 1, p. 86-89. DOI : 10.1109/LED.2020.3038808.

Output-Capacitance Hysteresis Losses of Field-Effect Transistors

N. Perera; A. Jafari; L. Nela; G. Kampitsis; M. S. Nikoo et al. 

2020-11-12. 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL), Aalborg, Denmark, November 9-12, 2020. p. 1-8. DOI : 10.1109/COMPEL49091.2020.9265823.

Small-Signal Approach for Precise Evaluation of Gate Losses in Soft-Switched Wide-Band-Gap Transistors

A. Jafari; M. S. Nikoo; N. Perera; F. Karakaya; R. Soleimanzadeh et al. 

2020-11-30. 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL), Aalborg, Denmark, November 9-12, 2020. p. 1-5. DOI : 10.1109/COMPEL49091.2020.9265751.

Calibration-Free Calorimeter for Sensitive Loss Measurements: Case of High-Frequency Inductors

A. Jafari; M. Heijnemans; R. Soleimanzadeh; R. van Erp; M. Samizadeh Nikoo et al. 

2020-11-30. 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL), Aalborg, Denmark, November 9-12, 2020. p. 1-8. DOI : 10.1109/COMPEL49091.2020.9265756.

Co-designing electronics with microfluidics for more sustainable cooling

R. F. P. van Erp; R. Soleiman Zadeh Ardebili; L. Nela; G. Kampitsis; E. Matioli 

Nature. 2020-09-09. Vol. 585, num. 7824, p. 211-216. DOI : 10.1038/s41586-020-2666.

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

R. F. P. van Erp; G. Kampitsis; L. Nela; R. Soleiman Zadeh Ardebili; E. Matioli 

2020-09-10. 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), Orlando, FL, USA, USA, July 21-23, 2020. p. 53-59. DOI : 10.1109/ITherm45881.2020.9190356.

Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs

M. Zhu; J. Ma; E. Matioli 

2020-08-18. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, September 13-18, 2020. p. 345-348. DOI : 10.1109/ISPSD46842.2020.9170183.

High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs

L. Nela; G. Kampitsis; h. yildirim; R. F. P. van Erp; J. Ma et al. 

2020-08-18. 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Septembre 13-18, 2020. p. 517-520. DOI : 10.1109/ISPSD46842.2020.9170092.

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

G. Santoruvo / E. d. N. Matioli (Dir.)  

Lausanne, EPFL, 2020. 

Output Capacitance Losses in Wide-Band-Gap Transistors: A Small-Signal Modeling Approach

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

2020-08-18. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). p. 190-193. DOI : 10.1109/ISPSD46842.2020.9170093.

97.4%-Efficient All-GaN Dual-Active-Bridge Converter with High Step-up High-Frequency Matrix Transformer

A. Jafari; M. Samizadeh Nikoo; F. Karakya; N. Perera; E. Matioli 

2020. PCIM Europe digital days 2020, Online, July 7-8, 2020.

Fully Soft-Switched High Step-Up Nonisolated Three-Port DC-DC Converter Using GaN HEMTs

R. Faraji; H. Farzanehfard; G. Kampitsis; M. Mattavelli; E. Matioli et al. 

Ieee Transactions On Industrial Electronics. 2020-10-01. Vol. 67, num. 10, p. 8371-8380. DOI : 10.1109/TIE.2019.2944068.

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes

L. Nela; R. F. P. van Erp; G. Kampitsis; H. K. Yildirim; J. Ma et al. 

IEEE Transactions on Power Electronics. 2020-07-09. Vol. 36, num. 2, p. 1269-1273. DOI : 10.1109/TPEL.2020.3008226.

High-Accuracy Calibration-Free Calorimeter for the Measurement of Low Power Losses

A. Jafari; M. Heijnemans; R. Soleiman Zadeh Ardebili; R. van Erp; M. Samizadeh Nikoo et al. 

IEEE Transactions on Power Electronics. 2020.  p. 1-1. DOI : 10.1109/TPEL.2020.3001001.

Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

N. Perera; M. Samizadeh Nikoo; A. Jafari; L. Nela; E. Matioli 

IEEE Transactions on Power Electronics. 2020-04-27. Vol. 35, num. 12, p. 1-1. DOI : 10.1109/TPEL.2020.2990370.

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

N. Perera; G. Kampitsis; R. Van Erp; J. Ancay; A. Jafari et al. 

IEEE Journal of Emerging and Selected Topics in Power Electronics. 2020-05-06.  p. 1-1. DOI : 10.1109/JESTPE.2020.2992946.

Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies

A. Jafari; M. Samizadeh; N. Perera; H. K. Yildirim; F. Karakaya et al. 

IEEE Transactions on Power Electronics. 2020-04-27.  p. 1-1. DOI : 10.1109/TPEL.2020.2990628.

Efficient High Step-up Operation in Boost Converters Based on Impulse Rectification

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

IEEE Transactions on Power Electronics. 2020-03-30.  p. 1-1. DOI : 10.1109/TPEL.2020.2982931.

Nanoplasma-enabled picosecond switches for ultrafast electronics

M. Samizadeh Nikoo; A. Jafari; N. Perera; M. Zhu; G. Santoruvo et al. 

Nature. 2020-03-25. Vol. 579, num. 7800, p. 534-539. DOI : 10.1038/s41586-020-2118-y.

Negative Resistance in Cascode Transistors

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

IEEE Transactions on Power Electronics. 2020-03-06.  p. 1-1. DOI : 10.1109/TPEL.2020.2978658.

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

C. Erine; J. Ma; G. Santoruvo; E. Matioli 

IEEE Electron Device Letters. 2020-01-17. Vol. 41, num. 3, p. 321-324. DOI : 10.1109/LED.2020.2967458.

Efficient Microchannel Cooling of Multiple Power Devices with Compact Flow Distribution for High Power-Density Converters

R. Van Erp; G. Kampitsis; E. Matioli 

IEEE Transactions on Power Electronics. 2020. Vol. 35, num. 7, p. 7235-7245. DOI : 10.1109/TPEL.2019.2959736.

Fast-switching Tri-Anode Schottky Barrier Diodes for monolithically integrated GaN-on-Si power circuits

L. Nela; G. kampitsis; J. Ma; E. Matioli 

IEEE Electron Device Letters. 2020. Vol. 41, num. 1, p. 99-102. DOI : 10.1109/LED.2019.2957700.

2019

High performance Fully-vertical GaN-on-Si power MOSFETs

R. M. A. Khadar; C. Liu; R. Soleimanzadeh; E. Matioli 

2019-01-01. Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019. DOI : 10.1109/ICIPRM.2019.8819025.

High-performance nanowire-based E-mode Power GaN MOSHEMTs

L. Nela; M. Zhu; J. Ma; E. Matioli 

2019-01-01. Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019. DOI : 10.1109/ICIPRM.2019.8819328.

Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide

T. Wang; L. Nela; J. Ma; E. Matioli 

2019-01-01. Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019. DOI : 10.1109/ICIPRM.2019.8818997.

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

J. Ma; C. Erine; M. Zhu; N. Luca; P. Xiang et al. 

2019-12-07. 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, December 7-11, 2019. p. 4.1.1-4.1.4. DOI : 10.1109/IEDM19573.2019.8993536.

Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires

G. Santoruvo; M. Samizadeh Nikoo; E. Matioli 

IEEE Microwave and Wireless Components Letters. 2019-12-23. Vol. 30, num. 1, p. 66-69. DOI : 10.1109/LMWC.2019.2953632.

Enhanced DAB for Efficiency Preservation using Adjustable-Tap High-Frequency Transformer

A. Jafari; M. Samizadeh Nikoo; F. Karakaya; E. Matioli 

IEEE Transactions on Power Electronics. 2019.  p. 1-1. DOI : 10.1109/TPEL.2019.2958632.

New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

IEEE Transactions on Power Electronics. 2019-12-06.  p. 1-1. DOI : 10.1109/TPEL.2019.2958000.

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

R. Soleimanzadeh; M. Naamoun; R. A. Khadar; R. van Erp; E. Matioli 

IEEE Electron Device Letters. 2019-11-13.  p. 1-1. DOI : 10.1109/LED.2019.2953245.

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

M. Zhu; J. Ma; L. Nela; C. Erine; E. Matioli 

IEEE Electron Device Letters. 2019-06-12. Vol. 40, num. 8, p. 1289-1292. DOI : 10.1109/LED.2019.2922204.

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

R. Soleimanzadeh; R. A. Khadar; M. Naamoun; R. van Erp; E. Matioli 

Journal of Applied Physics. 2019-10-30. Vol. 126, num. 16, p. 165113. DOI : 10.1063/1.5123615.

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

J. Ma; G. Santoruvo; L. Nela; T. Wang; E. Matioli 

IEEE Transactions on Electron Devices. 2019-09-01. Vol. 66, num. 9, p. 4068-4074. DOI : 10.1109/TED.2019.2925859.

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

IEEE Transactions on Power Electronics. 2019-09-02.  p. 1-1. DOI : 10.1109/TPEL.2019.2938922.

Tri-gate technologies for high-performance power GaN devices

J. Ma / E. d. N. Matioli (Dir.)  

Lausanne, EPFL, 2019. 

A manifold microchannel heat sink for ultra-high power density liquid-cooled converters

R. van Erp; G. Kampitsis; E. Matioli 

2019-01-01. 34th Annual IEEE Applied Power Electronics Conference and Exposition (APEC), Anaheim, CA, Mar 17-21, 2019. p. 1383-1389. DOI : 10.1109/APEC.2019.8722308.

High-performance normally-off tri-gate GaN power MOSFETs

M. Zhu; J. Ma; L. Nela; E. Matioli 

2019-07-11. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 19-23 May 2019. p. 71-74. DOI : 10.1109/ISPSD.2019.8757690.

GaN Transistors for Miniaturized Pulsed-Power Sources

M. Samizadeh Nikoo; A. Jafari; E. Matioli 

IEEE Transactions on Plasma Science. 2019-06-06. Vol. 47, num. 7, p. 3241-3245. DOI : 10.1109/TPS.2019.2917657.

On the Dynamic Performance of Laterally Gated Transistors

M. Samizadeh Nikoo; G. Santoruvo; C. Erine; A. Jafari; E. Matioli 

IEEE Electron Device Letters. 2019-05-30. Vol. 40, num. 7, p. 1171-1174. DOI : 10.1109/LED.2019.2920116.

Ultra-High Power Density Magnetic-less DC/DC Converter Utilizing GaN Transistors

G. Kampitsis; R. v. Erp; E. Matioli 

2019-05-27. 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), Anaheim, CA, USA, 17-21 March, 2019. p. 1609-1615. DOI : 10.1109/APEC.2019.8721783.

Enhanced transformation of sulfonamide antibiotics by manganese(IV) oxide in the presence of model humic constituents

Y. Song; J. Jiang; J. Ma; Y. Zhou; U. von Gunten 

Water Research. 2019-04-15. Vol. 153, p. 200-207. DOI : 10.1016/j.watres.2019.01.011.

On-Chip High-Voltage Sensors Based on Trap-Assisted 2DEG Channel Control

M. Samizadeh Nikoo; A. Jafari; E. Matioli 

IEEE Electron Device Letters. 2019-02-07. Vol. 40, num. 4, p. 613-615. DOI : 10.1109/LED.2019.2898043.

High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal

L. Nela; M. Zhu; J. Ma; E. Matioli 

IEEE Electron Device Letters. 2019-01-30.  p. 1-1. DOI : 10.1109/LED.2019.2896359.

Fully-vertical GaN-on-Si power MOSFETs

R. A. Khadar; C. Liu; R. Soleimanzadeh; E. Matioli 

IEEE Electron Device Letters. 2019-01-22. Vol. 40, num. 3, p. 443-446. DOI : 10.1109/LED.2019.2894177.

2018

Semiconductor device comprising a three-dimensional field plate

E. D. N. Matioli; J. Ma 

US11476357; EP3520142; EP3520142; US2019229208; WO2018060918.

2018.

Semiconductor devices with multiple channels and three-dimensional electrodes

E. D. N. Matioli; J. Ma 

EP3539159; US10985253; EP3539159; US2019267454; WO2018087728.

2018.

1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

T. Wang; J. Ma; E. Matioli 

IEEE Electron Device Letters. 2018. Vol. 39, num. 7, p. 1038-1041. DOI : 10.1109/LED.2018.2842031.

Multi-Channel Tri-gate GaN Power Schottky Diodes with Low ON-Resistance

J. Ma; G. Kampitsis; P. Xiang; K. Cheng; E. Matioli 

IEEE Electron Device Letters. 2018-12-17. Vol. 40, num. 2, p. 275-278. DOI : 10.1109/LED.2018.2887199.

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

J. Ma; C. Erine; P. Xiang; K. Cheng; E. Matioli 

Applied Physics Letters. 2018-12-10. Vol. 113, num. 24, p. 242102. DOI : 10.1063/1.5064407.

Electromechanics of suspended spiral capacitors and inductors

S. Khorasani 

Applied Physics Letters. 2018. Vol. 112, p. 031906. DOI : 10.1063/1.5012867.

High Step-Up High-Frequency Zero-Voltage Switched GaN-Based Single-Stage Isolated DC-DC Converter for PV Integration and Future DC Grids

A. Jafari; E. Matioli 

2018-06-05. PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany,

645 V quasi-vertical GaN power transistors on silicon substrates

C. Liu; R. A. Khadar; E. Matioli 

2018-05-13. 30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, May 13-17, 2018. p. 240-243. DOI : 10.1109/ISPSD.2018.8393647.

Monolithic integration of GaN-based NMOS digital logic gate circuits with E-mode power GaN MOSHEMTs

M. Zhu; E. Matioli 

2018-05-13. 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, May 13-17, 2018. p. 236-239. DOI : 10.1109/ISPSD.2018.8393646.

Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain

J. Ma; E. Matioli 

2018-05-13. 30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, May 13-17, 2018. p. 192-195. DOI : 10.1109/ISPSD.2018.8393635.

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

C. Liu; R. Abdul Khadar; E. Matioli 

IEEE Electron Device Letters. 2018-06-01. Vol. 39, num. 7, p. 1034-1037. DOI : 10.1109/LED.2018.2841959.

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

J. Ma; E. Matioli 

Applied Physics Letters. 2018. Vol. 112, num. 5, p. 052101. DOI : 10.1063/1.5012866.

820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2

R. A. Khadar; C. Liu; L. Zhang; P. Xiang; K. Cheng et al. 

IEEE Electron Device Letters. 2018. Vol. 39, num. 3, p. 401-404. DOI : 10.1109/LED.2018.2793669.

GaN-on-Si Quasi-Vertical Power MOSFETs

C. Liu; R. Abdul Khadar; E. Matioli 

IEEE Electron Device Letters. 2018. Vol. 39, num. 1, p. 71-74. DOI : 10.1109/LED.2017.2779445.

2017

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

J. Ma; M. Zhu; E. Matioli 

IEEE Electron Device Letters. 2017. Vol. 38, num. 12, p. 1704-1707. DOI : 10.1109/LED.2017.2761911.

In-Plane-Gate GaN Transistors for High-Power RF Applications

G. Santoruvo; E. Matioli 

IEEE Electron Device Letters. 2017. Vol. 38, num. 10, p. 1413-1416. DOI : 10.1109/LED.2017.2737658.

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-Off Voltage

J. Ma; D. C. Zanuz; E. Matioli 

IEEE Electron Device Letters. 2017. Vol. 38, num. 9, p. 1298-1301. DOI : 10.1109/LED.2017.2734644.

Slanted Tri-gates for High-Voltage GaN Power Devices

J. Ma; E. Matioli 

IEEE Electron Device Letters. 2017. Vol. 38, num. 9, p. 1305-1308. DOI : 10.1109/LED.2017.2731799.

Internal Quantum Efficiency in Light-Emitting Diodes

E. Matioli; C. Weisbuch 

III-Nitride Based Light Emitting Diodes and Applications; Singapore: Springer Singapore, 2017. p. 129-161.

High Performance Tri-gate GaN Power MOSHEMTs on Silicon Substrate

J. Ma; E. Matioli 

IEEE Electron Device Letters. 2017. Vol. 38, num. 3, p. 367-370. DOI : 10.1109/LED.2017.2661755.

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

J. Ma; E. Matioli 

IEEE Electron Device Letters. 2017. Vol. 38, num. 1, p. 83-86. DOI : 10.1109/LED.2016.2632044.

GaN-Based Nanowire Transistors

E. Matioli; B. Lu; D. Piedra; T. Palacios 

Power GaN Devices; Cham: Springer International Publishing, 2017. p. 123-144.

2016

Magneto-ballistic transport in GaN nanowires

G. Santoruvo; A. Allain; D. Ovchinnikov; E. Matioli 

Applied Physics Letters. 2016. Vol. 109, num. 10, p. 103102. DOI : 10.1063/1.4962332.

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

J. Ma; G. Santoruvo; P. Tandon; E. Matioli 

IEEE Transactions on Electron Devices. 2016. Vol. 63, num. 9, p. 3614-3619. DOI : 10.1109/TED.2016.2587801.

Improved electrical and thermal performances in nanostructured GaN devices

J. Ma; E. Matioli 

2016. 2016 International Conference on IC Design and Technology (ICICDT), Ho Chi Minh, Vietnam, 27-29 June 2016. p. 1-4. DOI : 10.1109/ICICDT.2016.7542061.

Compound Semiconductors Preface

T. Palacios; E. Matioli; R. Myers; S. Rajan; H. Wang 

Physica Status Solidi A-Applications And Materials Science. 2016. Vol. 213, num. 4, p. 850-850. DOI : 10.1002/pssa.201670627.

2015

Advanced power electronic devices based on Gallium Nitride (GaN)

D. Piedra; B. Lu; M. Sun; Y. Zhang; E. Matioli et al. 

2015. 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA, 7-9 December 2015. p. 16.6.1-16.6.4. DOI : 10.1109/IEDM.2015.7409713.

Room-Temperature Ballistic Transport in III-Nitride Heterostructures

E. Matioli; T. Palacios 

Nano Letters. 2015. Vol. 15, num. 2, p. 1070-1075. DOI : 10.1021/nl504029r.

2013

Nitride-based electron devices for high-power/high-frequency applications

Y. Cordier; T. Fujishima; B. Lu; E. Matioli; T. Palacios 

III-Nitride Semiconductors and their Modern Devices; Oxford University Press, 2013.

Active Region Part A. Internal Quantum Efficiency in LEDs

E. Matioli; C. Weisbuch 

Iii-Nitride Based Light Emitting Diodes And Applications; Berlin: Springer-Verlag Berlin, 2013. p. 121-152.

Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

J. Sakaguchi; T. Araki; T. Fujishima; E. Matioli; T. Palacios et al. 

Japanese Journal Of Applied Physics. 2013. Vol. 52, num. 8, p. 08JD06. DOI : 10.7567/Jjap.52.08Jd06.

Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure

E. Matioli; B. Lu; T. Palacios 

Ieee Transactions On Electron Devices. 2013. Vol. 60, num. 10, p. 3365-3370. DOI : 10.1109/Ted.2013.2279120.

2012

Low Leakage Normally-off Tri-gate GaN MISFET

B. Lu; E. Matioli; T. Palacios 

2012. 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD). p. 33-36. DOI : 10.1109/ISPSD.2012.6229016.

Tri-Gate Normally-Off GaN Power MISFET

B. Lu; E. Matioli; T. Palacios 

IEEE Electron Device Letters. 2012. Vol. 33, num. 3, p. 360-362. DOI : 10.1109/Led.2011.2179971.

High-brightness polarized light-emitting diodes

E. Matioli; S. Brinkley; K. M. Kelchner; Y-L. Hu; S. Nakamura et al. 

Light-Science & Applications. 2012. Vol. 1, p. e22. DOI : 10.1038/lsa.2012.22.

2011

YAG:Ce nanoparticle based converter layer for white LEDs

A. Revaux; G. Dantelle; S. Brinkley; E. Matioli; C. Weisbuch et al. 

2011. Conference on Nanoengineering – Fabrication, Properties, Optics, and Devices VIII. p. 81020R. DOI : 10.1117/12.892717.

Impact of the Vertical Layer Structure on the Emission Directionality of Thin-Film InGaN Photonic Crystal LEDs

E. Rangel; E. Matioli; H-T. Chen; C. Weisbuch; J. S. Speck et al. 

2011. Conference on Lasers and Electro-Optics (CLEO). DOI : 10.1364/CLEO_SI.2011.CMA3.

High internal and external quantum efficiency InGaN/GaN solar cells

E. Matioli; C. Neufeld; M. Iza; S. C. Cruz; A. A. Al-Heji et al. 

Applied Physics Letters. 2011. Vol. 98, num. 2, p. 021102. DOI : 10.1063/1.3540501.

Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes

E. Rangel; E. Matioli; Y-S. Choi; C. Weisbuch; J. S. Speck et al. 

Applied Physics Letters. 2011. Vol. 98, num. 8, p. 081104. DOI : 10.1063/1.3554417.

High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

J. R. Lang; C. J. Neufeld; C. A. Hurni; S. C. Cruz; E. Matioli et al. 

Applied Physics Letters. 2011. Vol. 98, num. 13, p. 131115. DOI : 10.1063/1.3575563.

Direct measurement of internal quantum efficiency in light emitting diodes under electrical injection

E. Matioli; C. Weisbuch 

Journal Of Applied Physics. 2011. Vol. 109, num. 7, p. 073114. DOI : 10.1063/1.3549730.

Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals

E. Matioli; S. Brinkley; K. M. Kelchner; S. Nakamura; S. Denbaars et al. 

Applied Physics Letters. 2011. Vol. 98, num. 25, p. 251112. DOI : 10.1063/1.3602319.

2010

High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes: Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals

E. Matioli; B. Fleury; E. Rangel; T. Melo; E. Hu et al. 

Applied Physics Express. 2010. Vol. 3, num. 3, p. 032103. DOI : 10.1143/Apex.3.032103.

High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals

E. Matioli; E. Rangel; M. Iza; B. Fleury; N. Pfaff et al. 

Applied Physics Letters. 2010. Vol. 96, num. 3, p. 031108. DOI : 10.1063/1.3293442.

Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes

E. Matioli; B. Fleury; E. Rangel; E. Hu; J. Speck et al. 

Journal Of Applied Physics. 2010. Vol. 107, num. 5, p. 053114. DOI : 10.1063/1.3309837.

Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes

E. Rangel; E. Matioli; H-T. Chen; Y-S. Choi; C. Weisbuch et al. 

Applied Physics Letters. 2010. Vol. 97, num. 6, p. 061118. DOI : 10.1063/1.3480421.

Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs

E. Matioli; C. Weisbuch 

Journal Of Physics D-Applied Physics. 2010. Vol. 43, num. 35, p. 354005. DOI : 10.1088/0022-3727/43/35/354005.

CdSe Nanorods Dominate Photocurrent of Hybrid CdSe-P3HT Photovoltaic Cell

M. Schierhorn; S. W. Boettcher; J. H. Peet; E. Matioli; G. C. Bazan et al. 

Acs Nano. 2010. Vol. 4, num. 10, p. 6132-6136. DOI : 10.1021/nn101742c.

2009

GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization

E. Matioli; M. Iza; Y-S. Choi; F. Wu; S. Keller et al. 

2009. International Workshop on Nitride Semiconductors (IWN). p. S675-S679. DOI : 10.1002/pssc.200880987.

Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal

T. A. Truong; L. M. Campos; E. Matioli; I. Meinel; C. J. Hawker et al. 

Applied Physics Letters. 2009. Vol. 94, num. 2, p. 023101. DOI : 10.1063/1.3067837.

Electroluminescent measurement of the internal quantum efficiency of light emitting diodes

A. Getty; E. Matioli; M. Iza; C. Weisbuch; J. S. Speck 

Applied Physics Letters. 2009. Vol. 94, num. 18, p. 181102. DOI : 10.1063/1.3129866.

Growth of embedded photonic crystals for GaN-based optoelectronic devices

E. Matioli; S. Keller; F. Wu; Y-S. Choi; E. Hu et al. 

Journal Of Applied Physics. 2009. Vol. 106, num. 2, p. 024309. DOI : 10.1063/1.3174385.

2008

Submicron-thick microcavity InGaN light emitting diodes

Y. Choi; M. Iza; E. Matioli; G. Koblmuller; J. Speck et al. 

2008. Integrated Optoelectronic Devices 2008, San Jose, California, United States, DOI : 10.1117/12.764696.

GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

A. David; B. Moran; K. Mcgroddy; E. Matioli; E. L. Hu et al. 

Applied Physics Letters. 2008. Vol. 92, num. 11, p. 113514. DOI : 10.1063/1.2898513.

Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes

K. Mcgroddy; A. David; E. Matioli; M. Iza; S. Nakamura et al. 

Applied Physics Letters. 2008. Vol. 93, num. 10, p. 103502. DOI : 10.1063/1.2978068.

2007

Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells

S. Keller; N. A. Fichtenbaum; C. Schaake; C. J. Neufeld; A. David et al. 

physica status solidi (b). 2007. Vol. 244, num. 6, p. 1797-1801. DOI : 10.1002/pssb.200674752.

2.5 lambda microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process

Y-S. Choi; M. Iza; E. Matioli; G. Koblmueller; J. S. Speck et al. 

Applied Physics Letters. 2007. Vol. 91, num. 6, p. 061120. DOI : 10.1063/1.2769397.

2006

Omnidirectional light extraction in GaN LEDs using an Archimedean tiling photonic crystal

A. David; T. Fujii; E. Matioli; R. Sharma; S. Nakamura et al. 

2006. Conference on Physics and Simulation of Optoelectronic Devices XIV. p. 61151X. DOI : 10.1117/12.648218.

GaN light-emitting diodes with Archimedean lattice photonic crystals

A. David; T. Fujii; E. Matioli; R. Sharma; S. Nakamura et al. 

Applied Physics Letters. 2006. Vol. 88, num. 7, p. 073510. DOI : 10.1063/1.2168673.