2023
Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State
IEEE Transactions on Power Electronics. 2023-04-20. DOI : 10.1109/TPEL.2023.3268890.Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview
Ieee Transactions On Power Electronics. 2023-03-01. Vol. 38, num. 3, p. 3569-3589. DOI : 10.1109/TPEL.2022.3223730.Electronic metadevices for terahertz applications
Nature. 2023-02-16. Vol. 614, num. 7948, p. 451-+. DOI : 10.1038/s41586-022-05595-z.Measurement of WBG-based power supplies
2023-01-01. 25th European Conference on Power Electronics and Applications (EPE ECCE Europe), Aalborg, DENMARK, SEP 04-08, 2023.Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis
2023-01-01. 25th European Conference on Power Electronics and Applications (EPE ECCE Europe), Aalborg, DENMARK, SEP 04-08, 2023.New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation
Lausanne, EPFL, 2023.2022
GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films
Japanese Journal Of Applied Physics. 2022-11-01. Vol. 61, num. 11, p. 118003. DOI : 10.35848/1347-4065/ac980f.Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing
Nature Electronics. 2022-08-22. DOI : 10.1038/s41928-022-00812-z.Nanoplasma-based Millimiter-wave Modulators on a Single Metal Layer
IEEE Electron Device Letters. 2022-06-30. p. 1-1. DOI : 10.1109/LED.2022.3187456.A perspective on multi-channel technology for the next-generation of GaN power devices
Applied Physics Letters. 2022-05-09. Vol. 120, num. 19, p. 190501. DOI : 10.1063/5.0086978.Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition
Japanese Journal Of Applied Physics. 2022-04-01. Vol. 61, num. 4, p. 048002. DOI : 10.35848/1347-4065/ac54fe.Beyond 8 THz Displacement-field Nano-switches for 5G and 6G Communications
2022-03-09. 67th Annual IEEE International Electron Devices Meeting (IEDM 2021), San Francisco, CA, USA, December 11-16, 2021. p. 4.5.1-4.5.4. DOI : 10.1109/IEDM19574.2021.9720575.Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures
IEEE Transactions on Electron Devices. 2022-03-03. Vol. 69, p. 1798-1804. DOI : 10.1109/TED.2022.3151558.A Generalized Phase-Shift PWM Extension for Improved Natural and Active Balancing of Flying Capacitor Multilevel Inverters
Ieee Open Journal Of Power Electronics. 2022-01-01. Vol. 3, p. 621-634. DOI : 10.1109/OJPEL.2022.3209540.LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor
Lausanne, EPFL, 2022.Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate
IEEE Electron Device Letters. 2022. p. 1-1. DOI : 10.1109/LED.2022.3189635.Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation
Lausanne, EPFL, 2022.New Technologies to Enhance the Figures-of-Merit of GaN Power Devices
Lausanne, EPFL, 2022.Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance
Lausanne, EPFL, 2022.2021
p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes
Applied Physics Letters. 2021-12-29. Vol. 119, num. 26, p. 263508. DOI : 10.1063/5.0074543.Hard-Switching Losses in Power FETs: The Role of Output Capacitance
IEEE Transactions on Power Electronics. 2021-11-25. Vol. 37, num. 7, p. 7604-7616. DOI : 10.1109/TPEL.2021.3130831.Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters
2021-11-16. IEEE Energy Conversion Congress and Exposition (ECCE 2021), Vancouver, BC, Canada, October 10-14, 2021. p. 5312-5319. DOI : 10.1109/ECCE47101.2021.9594950.GaN-based power devices: Physics, reliability, and perspectives
Journal Of Applied Physics. 2021-11-08. Vol. 130, num. 18, p. 181101. DOI : 10.1063/5.0061354.Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs
IEEE Journal of the Electron Devices Society. 2021-11-08. Vol. 9, p. 1066-1075. DOI : 10.1109/JEDS.2021.3125742.Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors
IEEE Electron Device Letters. 2021-09-20. Vol. 42, num. 11, p. 1642-1645. DOI : 10.1109/LED.2021.3114056.Seed Dibbling Method for the Grow of High-Quality Diamond on GaN
Acs Applied Materials & Interfaces. 2021-09-15. Vol. 13, num. 36, p. 43516-43523. DOI : 10.1021/acsami.1c08761.p-NiO junction termination extensions for GaN power devices
Applied Physics Express. 2021-07-01. Vol. 14, num. 7, p. 071006. DOI : 10.35848/1882-0786/ac09ff.Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K
Ieee Transactions On Power Electronics. 2021-07-01. Vol. 36, num. 7, p. 7412-7416. DOI : 10.1109/TPEL.2020.3047466.High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors
2021-06-15. 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, May 30-Jun 03, 2021. p. 143-146. DOI : 10.23919/ISPSD50666.2021.9452238.High conductivity InAlN/GaN multi-channel two-dimensional electron gases
Semiconductor Science And Technology. 2021-05-01. Vol. 36, num. 5, p. 055020. DOI : 10.1088/1361-6641/abf3a7.Quasi-vertical GaN-on-Si reverse blocking power MOSFETs
Applied Physics Express. 2021-04-01. Vol. 14, num. 4, p. 046503. DOI : 10.35848/1882-0786/abf054.Multi-channel nanowire devices for efficient power conversion
Nature Electronics. 2021-03-25. Vol. 4, p. 284–290. DOI : 10.1038/s41928-021-00550-8.Kilowatt-range Picosecond Switching Based on Microplasma Devices
IEEE Electron Device Letters. 2021-03-24. p. 1-1. DOI : 10.1109/LED.2021.3068732.Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors
2021-03-09. 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia), Nanjing, China, 29 Nov.-2 Dec. 2020. DOI : 10.1109/IPEMC-ECCEAsia48364.2020.9367884.Enhanced-DAB Converter: Comprehensive Design Evaluation
2021-03-09. 2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia), Nanjing, China, 29 Nov.-2 Dec. 2020. p. 1844-1851. DOI : 10.1109/IPEMC-ECCEAsia48364.2020.9368193.Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs
IEEE Electron Device Letters. 2021-03-04. p. 1-1. DOI : 10.1109/LED.2021.3064021.Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies (vol 35, pg 12595, 2020)
Ieee Transactions On Power Electronics. 2021-02-01. Vol. 36, num. 2, p. 2444-2445. DOI : 10.1109/TPEL.2020.3017073.Parallel PV Configuration with Magnetic-Free Switched Capacitor Module-Level Converters for Partial Shading Conditions
Energies. 2021-01-15. Vol. 14, num. 2, p. 456. DOI : 10.3390/en14020456.Microchannel-based Calorimeter for Rapid and Accurate Loss Measurements on High-efficiency Power Converters
2021-01-01. 13th IEEE Energy Conversion Congress and Exposition (IEEE ECCE), ELECTR NETWORK, Oct 10-14, 2021. p. 5709-5715. DOI : 10.1109/ECCE47101.2021.9595598.Embedded Microchannel Cooling for Monolithically-integrated GaN Half-bridge ICs
2021-01-01. 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), ELECTR NETWORK, Sep 23, 2021. DOI : 10.1109/THERMINIC52472.2021.9626476.Radio Frequency Temperature Transducers Based On Insulator-Metal Phase Transition In Vo2 And Ge-Doped Vo2 Ald Thin Films
2021-01-01. 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), ELECTR NETWORK, Jun 20-25, 2021. p. 1355-1358. DOI : 10.1109/TRANSDUCERS50396.2021.9495498.Heterostructure design and field management in III-N high-electron mobility electronic devices
Lausanne, EPFL, 2021.Diamond on GaN integration for power semiconductor devices with efficient thermal management
Lausanne, EPFL, 2021.LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors
2021-01-01. 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, JAPAN, May 30-Jun 03, 2021. p. 135-138. DOI : 10.23919/ISPSD50666.2021.9452252.p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices
2021-01-01. 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, JAPAN, May 30-Jun 03, 2021. p. 147-150. DOI : 10.23919/ISPSD50666.2021.9452255.Integrated electronic device with embedded microchannels and a method for producing thereof
US2023037442; EP4078672; WO2021121560.
2021.Pushing the Limits of Efficiency and Power Density in High-Frequency Power Conversion Based on Wide-Band-Gap Technologies
Lausanne, EPFL, 2021.Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits
Lausanne, EPFL, 2021.P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors
Ieee Electron Device Letters. 2021-01-01. Vol. 42, num. 1, p. 82-85. DOI : 10.1109/LED.2020.3037026.GaN vertical power devices on silicon substrates
Lausanne, EPFL, 2021.Optimized kW-Range Boost Converter Based on Impulse Rectification with 52 kW/l and 98.6% Efficiency
IEEE Transactions on Power Electronics. 2021. Vol. 36, num. 7, p. 7389-7394. DOI : 10.1109/TPEL.2020.3045062.2020
Small-Signal Approach for Precise Evaluation of Gate Losses in Soft-Switched Wide-Band-Gap Transistors
2020-11-30. 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL), Aalborg, Denmark, November 9-12, 2020. p. 1-5. DOI : 10.1109/COMPEL49091.2020.9265751.Calibration-Free Calorimeter for Sensitive Loss Measurements: Case of High-Frequency Inductors
2020-11-30. 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL), Aalborg, Denmark, November 9-12, 2020. p. 1-8. DOI : 10.1109/COMPEL49091.2020.9265756.Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse
IEEE Electron Device Letters. 2020-11-17. Vol. 42, num. 1, p. 86-89. DOI : 10.1109/LED.2020.3038808.Output-Capacitance Hysteresis Losses of Field-Effect Transistors
2020-11-12. 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL), Aalborg, Denmark, November 9-12, 2020. p. 1-8. DOI : 10.1109/COMPEL49091.2020.9265823.Fully Soft-Switched High Step-Up Nonisolated Three-Port DC-DC Converter Using GaN HEMTs
Ieee Transactions On Industrial Electronics. 2020-10-01. Vol. 67, num. 10, p. 8371-8380. DOI : 10.1109/TIE.2019.2944068.Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits
2020-09-10. 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), Orlando, FL, USA, USA, July 21-23, 2020. p. 53-59. DOI : 10.1109/ITherm45881.2020.9190356.Co-designing electronics with microfluidics for more sustainable cooling
Nature. 2020-09-09. Vol. 585, num. 7824, p. 211-216. DOI : 10.1038/s41586-020-2666-1.Co-designing electronics with microfluidics for more sustainable cooling
Nature. 2020-09-09. Vol. 585, num. 7824, p. 211-216. DOI : 10.1038/s41586-020-2666.Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs
2020-08-18. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, September 13-18, 2020. p. 345-348. DOI : 10.1109/ISPSD46842.2020.9170183.High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs
2020-08-18. 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Septembre 13-18, 2020. p. 517-520. DOI : 10.1109/ISPSD46842.2020.9170092.Output Capacitance Losses in Wide-Band-Gap Transistors: A Small-Signal Modeling Approach
2020-08-18. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). p. 190-193. DOI : 10.1109/ISPSD46842.2020.9170093.Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes
IEEE Transactions on Power Electronics. 2020-07-09. Vol. 36, num. 2, p. 1269-1273. DOI : 10.1109/TPEL.2020.3008226.Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit
IEEE Journal of Emerging and Selected Topics in Power Electronics. 2020-05-06. p. 1-1. DOI : 10.1109/JESTPE.2020.2992946.Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses
IEEE Transactions on Power Electronics. 2020-04-27. Vol. 35, num. 12, p. 1-1. DOI : 10.1109/TPEL.2020.2990370.Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies
IEEE Transactions on Power Electronics. 2020-04-27. p. 1-1. DOI : 10.1109/TPEL.2020.2990628.Efficient High Step-up Operation in Boost Converters Based on Impulse Rectification
IEEE Transactions on Power Electronics. 2020-03-30. p. 1-1. DOI : 10.1109/TPEL.2020.2982931.Nanoplasma-enabled picosecond switches for ultrafast electronics
Nature. 2020-03-25. Vol. 579, num. 7800, p. 534-539. DOI : 10.1038/s41586-020-2118-y.Negative Resistance in Cascode Transistors
IEEE Transactions on Power Electronics. 2020-03-06. p. 1-1. DOI : 10.1109/TPEL.2020.2978658.Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors
IEEE Electron Device Letters. 2020-01-17. Vol. 41, num. 3, p. 321-324. DOI : 10.1109/LED.2020.2967458.Analysis of Output Capacitance Co-Energy and Discharge Losses in Hard-Switched FETs
2020-01-01. IEEE 9th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia), Nanjing, PEOPLES R CHINA, Nov 29-Dec 02, 2020. p. 52-59. DOI : 10.1109/IPEMC-ECCEAsia48364.2020.9367701.Mixed Simulation-Experimental Optimization of a Modular Multilevel Switched Capacitors Converter Cell
2020-01-01. IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL), Aalborg, DENMARK, Nov 09-12, 2020. p. 883-888. DOI : 10.1109/COMPEL49091.2020.9265665.AlGaN/GaN Nanowires: from Electron Transport to RF Applications
Lausanne, EPFL, 2020.97.4%-Efficient All-GaN Dual-Active-Bridge Converter with High Step-up High-Frequency Matrix Transformer
2020. PCIM Europe digital days 2020, Online, July 7-8, 2020.High-Accuracy Calibration-Free Calorimeter for the Measurement of Low Power Losses
IEEE Transactions on Power Electronics. 2020. p. 1-1. DOI : 10.1109/TPEL.2020.3001001.Efficient Microchannel Cooling of Multiple Power Devices with Compact Flow Distribution for High Power-Density Converters
IEEE Transactions on Power Electronics. 2020. Vol. 35, num. 7, p. 7235-7245. DOI : 10.1109/TPEL.2019.2959736.Fast-switching Tri-Anode Schottky Barrier Diodes for monolithically integrated GaN-on-Si power circuits
IEEE Electron Device Letters. 2020. Vol. 41, num. 1, p. 99-102. DOI : 10.1109/LED.2019.2957700.2019
Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires
IEEE Microwave and Wireless Components Letters. 2019-12-23. Vol. 30, num. 1, p. 66-69. DOI : 10.1109/LMWC.2019.2953632.1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance
2019-12-07. 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, December 7-11, 2019. p. 4.1.1-4.1.4. DOI : 10.1109/IEDM19573.2019.8993536.New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors
IEEE Transactions on Power Electronics. 2019-12-06. p. 1-1. DOI : 10.1109/TPEL.2019.2958000.H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon
IEEE Electron Device Letters. 2019-11-13. p. 1-1. DOI : 10.1109/LED.2019.2953245.Near-junction heat spreaders for hot spot thermal management of high power density electronic devices
Journal of Applied Physics. 2019-10-30. Vol. 126, num. 16, p. 165113. DOI : 10.1063/1.5123615.Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance
IEEE Transactions on Power Electronics. 2019-09-02. p. 1-1. DOI : 10.1109/TPEL.2019.2938922.Impact of Fin Width on Tri-Gate GaN MOSHEMTs
IEEE Transactions on Electron Devices. 2019-09-01. Vol. 66, num. 9, p. 4068-4074. DOI : 10.1109/TED.2019.2925859.High-performance normally-off tri-gate GaN power MOSFETs
2019-07-11. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 19-23 May 2019. p. 71-74. DOI : 10.1109/ISPSD.2019.8757690.High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance
IEEE Electron Device Letters. 2019-06-12. Vol. 40, num. 8, p. 1289-1292. DOI : 10.1109/LED.2019.2922204.GaN Transistors for Miniaturized Pulsed-Power Sources
IEEE Transactions on Plasma Science. 2019-06-06. Vol. 47, num. 7, p. 3241-3245. DOI : 10.1109/TPS.2019.2917657.On the Dynamic Performance of Laterally Gated Transistors
IEEE Electron Device Letters. 2019-05-30. Vol. 40, num. 7, p. 1171-1174. DOI : 10.1109/LED.2019.2920116.Ultra-High Power Density Magnetic-less DC/DC Converter Utilizing GaN Transistors
2019-05-27. 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), Anaheim, CA, USA, 17-21 March, 2019. p. 1609-1615. DOI : 10.1109/APEC.2019.8721783.Enhanced transformation of sulfonamide antibiotics by manganese(IV) oxide in the presence of model humic constituents
Water Research. 2019-04-15. Vol. 153, p. 200-207. DOI : 10.1016/j.watres.2019.01.011.On-Chip High-Voltage Sensors Based on Trap-Assisted 2DEG Channel Control
IEEE Electron Device Letters. 2019-02-07. Vol. 40, num. 4, p. 613-615. DOI : 10.1109/LED.2019.2898043.High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal
IEEE Electron Device Letters. 2019-01-30. p. 1-1. DOI : 10.1109/LED.2019.2896359.Fully-vertical GaN-on-Si power MOSFETs
IEEE Electron Device Letters. 2019-01-22. Vol. 40, num. 3, p. 443-446. DOI : 10.1109/LED.2019.2894177.High performance Fully-vertical GaN-on-Si power MOSFETs
2019-01-01. Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019. DOI : 10.1109/ICIPRM.2019.8819025.High-performance nanowire-based E-mode Power GaN MOSHEMTs
2019-01-01. Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019. DOI : 10.1109/ICIPRM.2019.8819328.Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide
2019-01-01. Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019. DOI : 10.1109/ICIPRM.2019.8818997.Enhanced DAB for Efficiency Preservation using Adjustable-Tap High-Frequency Transformer
IEEE Transactions on Power Electronics. 2019. p. 1-1. DOI : 10.1109/TPEL.2019.2958632.Tri-gate technologies for high-performance power GaN devices
Lausanne, EPFL, 2019.A manifold microchannel heat sink for ultra-high power density liquid-cooled converters
2019-01-01. 34th Annual IEEE Applied Power Electronics Conference and Exposition (APEC), Anaheim, CA, Mar 17-21, 2019. p. 1383-1389. DOI : 10.1109/APEC.2019.8722308.2018
Multi-Channel Tri-gate GaN Power Schottky Diodes with Low ON-Resistance
IEEE Electron Device Letters. 2018-12-17. Vol. 40, num. 2, p. 275-278. DOI : 10.1109/LED.2018.2887199.Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance
Applied Physics Letters. 2018-12-10. Vol. 113, num. 24, p. 242102. DOI : 10.1063/1.5064407.High Step-Up High-Frequency Zero-Voltage Switched GaN-Based Single-Stage Isolated DC-DC Converter for PV Integration and Future DC Grids
2018-06-05. PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany,Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes
IEEE Electron Device Letters. 2018-06-01. Vol. 39, num. 7, p. 1034-1037. DOI : 10.1109/LED.2018.2841959.645 V quasi-vertical GaN power transistors on silicon substrates
2018-05-13. 30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, May 13-17, 2018. p. 240-243. DOI : 10.1109/ISPSD.2018.8393647.Monolithic integration of GaN-based NMOS digital logic gate circuits with E-mode power GaN MOSHEMTs
2018-05-13. 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, May 13-17, 2018. p. 236-239. DOI : 10.1109/ISPSD.2018.8393646.Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain
2018-05-13. 30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, May 13-17, 2018. p. 192-195. DOI : 10.1109/ISPSD.2018.8393635.Semiconductor device comprising a three-dimensional field plate
US11476357; EP3520142; EP3520142; US2019229208; WO2018060918.
2018.Semiconductor devices with multiple channels and three-dimensional electrodes
EP3539159; US10985253; EP3539159; US2019267454; WO2018087728.
2018.