2026
Journal Articles
Integrated Thermal Management for a High-Power-Density Silicon Carbide Power Module With Die-Level Heat Flux Over 1000 W/cm2
Ieee Journal Of Emerging And Selected Topics In Power Electronics. 2026. Vol. 13, num. 2, p. 2125 – 2137. DOI : 10.1109/JESTPE.2024.3524214.2025
Journal Articles
Low‐Power Tunable Micro‐Plasma Device for Efficient and Scalable CO2 Valorization
Advanced Science. 2025. DOI : 10.1002/advs.202507687.Dynamic Charge Transport Behavior of Double-layer Thin Film Materials Under Electron Beam Irradiation
JOURNAL OF PHYSICS D-APPLIED PHYSICS. 2025. Vol. 58, num. 23. DOI : 10.1088/1361-6463/add746.p-NiO/LiNiO-GaN heterojunctions: a potential alternative to p-GaN for advanced devices
IEEE Electron Device Letters. 2025. DOI : 10.1109/LED.2025.3549252.Reviews
A review of thermal management of batteries with a focus on immersion cooling
Renewable and Sustainable Energy Reviews. 2025. Vol. 217, p. 115751. DOI : 10.1016/j.rser.2025.115751.2024
Journal Articles
Soft-Switching CO Hysteresis Losses in GaN HEMTs: A Resonant-Sawyer-Tower Measurement Method
IEEE Transactions on Power Electronics. 2024. p. 1 – 11. DOI : 10.1109/TPEL.2024.3443645.In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l
IEEE Transactions on Power Electronics. 2024. Vol. 39, num. 8, p. 9717 – 9723. DOI : 10.1109/TPEL.2024.3396508.Numerical study on a new manifold ring-shaped microchannel structure for circular heat source with excellent temperature uniformity
INTERNATIONAL JOURNAL OF THERMAL SCIENCES. 2024. Vol. 204. DOI : 10.1016/j.ijthermalsci.2024.109225.Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures
Japanese Journal Of Applied Physics. 2024. Vol. 63, num. 6, p. 060904. DOI : 10.35848/1347-4065/ad5480.Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron
IEEE Electron Devices Letters. 2024. DOI : 10.1109/LED.2024.3395112.Chip-Scale Watt-Range Terahertz Generation Based on Fast Transition in Nanoplasma Switches
IEEE Electron Device Letters. 2024. Vol. 45, num. 6, p. 1072 – 1075. DOI : 10.1109/LED.2024.3387066.Theses
Direct high-temperature MOCVD growth of GaN on foreign substrates
Lausanne, EPFL, 2024.2023
Journal Articles
Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State
IEEE Transactions on Power Electronics. 2023. DOI : 10.1109/TPEL.2023.3268890.Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview
IEEE Transactions on Power Electronics. 2023. Vol. 38, num. 3, p. 3569 – 3589. DOI : 10.1109/TPEL.2022.3223730.Electronic metadevices for terahertz applications
Nature. 2023. Vol. 614, num. 7948, p. 451 – +. DOI : 10.1038/s41586-022-05595-z.Conference Papers
Measurement of WBG-based power supplies
2023. 25th European Conference on Power Electronics and Applications (EPE ECCE Europe), Aalborg, DENMARK, SEP 04-08, 2023. DOI : 10.23919/EPE23ECCEEurope58414.2023.10264671.Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis
2023. 25th European Conference on Power Electronics and Applications (EPE ECCE Europe), Aalborg, DENMARK, SEP 04-08, 2023. DOI : 10.23919/EPE23ECCEEurope58414.2023.10264510.Theses
New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation
Lausanne, EPFL, 2023.2022
Journal Articles
GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films
Japanese Journal Of Applied Physics. 2022. Vol. 61, num. 11, p. 118003. DOI : 10.35848/1347-4065/ac980f.Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing
Nature Electronics. 2022. DOI : 10.1038/s41928-022-00812-z.Nanoplasma-based Millimiter-wave Modulators on a Single Metal Layer
IEEE Electron Device Letters. 2022. p. 1 – 1. DOI : 10.1109/LED.2022.3187456.A perspective on multi-channel technology for the next-generation of GaN power devices
Applied Physics Letters. 2022. Vol. 120, num. 19, p. 190501. DOI : 10.1063/5.0086978.Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition
Japanese Journal Of Applied Physics. 2022. Vol. 61, num. 4, p. 048002. DOI : 10.35848/1347-4065/ac54fe.Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures
IEEE Transactions on Electron Devices. 2022. Vol. 69, p. 1798 – 1804. DOI : 10.1109/TED.2022.3151558.A Generalized Phase-Shift PWM Extension for Improved Natural and Active Balancing of Flying Capacitor Multilevel Inverters
Ieee Open Journal Of Power Electronics. 2022. Vol. 3, p. 621 – 634. DOI : 10.1109/OJPEL.2022.3209540.Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate
IEEE Electron Device Letters. 2022. p. 1 – 1. DOI : 10.1109/LED.2022.3189635.p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes
Applied Physics Letters. 2022. Vol. 119, num. 26, p. 263508. DOI : 10.1063/5.0074543.Conference Papers
Beyond 8 THz Displacement-field Nano-switches for 5G and 6G Communications
2022. 67th Annual IEEE International Electron Devices Meeting (IEDM 2021), San Francisco, CA, USA, December 11-16, 2021. p. 4.5.1 – 4.5.4. DOI : 10.1109/IEDM19574.2021.9720575.Theses
Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation
Lausanne, EPFL, 2022.Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance
Lausanne, EPFL, 2022.LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor
Lausanne, EPFL, 2022.New Technologies to Enhance the Figures-of-Merit of GaN Power Devices
Lausanne, EPFL, 2022.2021
Journal Articles
Hard-Switching Losses in Power FETs: The Role of Output Capacitance
IEEE Transactions on Power Electronics. 2021. Vol. 37, num. 7, p. 7604 – 7616. DOI : 10.1109/TPEL.2021.3130831.GaN-based power devices: Physics, reliability, and perspectives
Journal Of Applied Physics. 2021. Vol. 130, num. 18, p. 181101. DOI : 10.1063/5.0061354.Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs
IEEE Journal of the Electron Devices Society. 2021. Vol. 9, p. 1066 – 1075. DOI : 10.1109/JEDS.2021.3125742.Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors
IEEE Electron Device Letters. 2021. Vol. 42, num. 11, p. 1642 – 1645. DOI : 10.1109/LED.2021.3114056.Seed Dibbling Method for the Grow of High-Quality Diamond on GaN
ACS Applied Materials & Interfaces. 2021. Vol. 13, num. 36, p. 43516 – 43523. DOI : 10.1021/acsami.1c08761.p-NiO junction termination extensions for GaN power devices
Applied Physics Express. 2021. Vol. 14, num. 7, p. 071006. DOI : 10.35848/1882-0786/ac09ff.Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K
IEEE Transactions on Power Electronics. 2021. Vol. 36, num. 7, p. 7412 – 7416. DOI : 10.1109/TPEL.2020.3047466.High conductivity InAlN/GaN multi-channel two-dimensional electron gases
Semiconductor Science And Technology. 2021. Vol. 36, num. 5, p. 055020. DOI : 10.1088/1361-6641/abf3a7.Quasi-vertical GaN-on-Si reverse blocking power MOSFETs
Applied Physics Express. 2021. Vol. 14, num. 4, p. 046503. DOI : 10.35848/1882-0786/abf054.Multi-channel nanowire devices for efficient power conversion
Nature Electronics. 2021. Vol. 4, p. 284 – 290. DOI : 10.1038/s41928-021-00550-8.Kilowatt-range Picosecond Switching Based on Microplasma Devices
IEEE Electron Device Letters. 2021. p. 1 – 1. DOI : 10.1109/LED.2021.3068732.Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs
IEEE Electron Device Letters. 2021. p. 1 – 1. DOI : 10.1109/LED.2021.3064021.Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies (vol 35, pg 12595, 2020)
IEEE Transactions on Power Electronics. 2021. Vol. 36, num. 2, p. 2444 – 2445. DOI : 10.1109/TPEL.2020.3017073.Parallel PV Configuration with Magnetic-Free Switched Capacitor Module-Level Converters for Partial Shading Conditions
Energies. 2021. Vol. 14, num. 2, p. 456. DOI : 10.3390/en14020456.Optimized kW-Range Boost Converter Based on Impulse Rectification with 52 kW/l and 98.6% Efficiency
IEEE Transactions on Power Electronics. 2021. Vol. 36, num. 7, p. 7389 – 7394. DOI : 10.1109/TPEL.2020.3045062.P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors
Ieee Electron Device Letters. 2021. Vol. 42, num. 1, p. 82 – 85. DOI : 10.1109/LED.2020.3037026.Conference Papers
Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters
2021. IEEE Energy Conversion Congress and Exposition (ECCE 2021), Vancouver, BC, Canada, October 10-14, 2021. p. 5312 – 5319. DOI : 10.1109/ECCE47101.2021.9594950.High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors
2021. 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, May 30-Jun 03, 2021. p. 143 – 146. DOI : 10.23919/ISPSD50666.2021.9452238.Enhanced-DAB Converter: Comprehensive Design Evaluation
2021. 2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia), Nanjing, China, 29 Nov.-2 Dec. 2020. p. 1844 – 1851. DOI : 10.1109/IPEMC-ECCEAsia48364.2020.9368193.Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors
2021. 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia), Nanjing, China, 29 Nov.-2 Dec. 2020. DOI : 10.1109/IPEMC-ECCEAsia48364.2020.9367884.LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors
2021. 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, JAPAN, May 30-Jun 03, 2021. p. 135 – 138. DOI : 10.23919/ISPSD50666.2021.9452252.Microchannel-based Calorimeter for Rapid and Accurate Loss Measurements on High-efficiency Power Converters
2021. 13th IEEE Energy Conversion Congress and Exposition (IEEE ECCE), ELECTR NETWORK, Oct 10-14, 2021. p. 5709 – 5715. DOI : 10.1109/ECCE47101.2021.9595598.p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices
2021. 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, JAPAN, May 30-Jun 03, 2021. p. 147 – 150. DOI : 10.23919/ISPSD50666.2021.9452255.Embedded Microchannel Cooling for Monolithically-integrated GaN Half-bridge ICs
2021. 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), ELECTR NETWORK, Sep 23, 2021. DOI : 10.1109/THERMINIC52472.2021.9626476.Radio Frequency Temperature Transducers Based On Insulator-Metal Phase Transition In Vo2 And Ge-Doped Vo2 Ald Thin Films
2021. 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), ELECTR NETWORK, Jun 20-25, 2021. p. 1355 – 1358. DOI : 10.1109/TRANSDUCERS50396.2021.9495498.Theses
Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits
Lausanne, EPFL, 2021.Diamond on GaN integration for power semiconductor devices with efficient thermal management
Lausanne, EPFL, 2021.GaN vertical power devices on silicon substrates
Lausanne, EPFL, 2021.Heterostructure design and field management in III-N high-electron mobility electronic devices
Lausanne, EPFL, 2021.Pushing the Limits of Efficiency and Power Density in High-Frequency Power Conversion Based on Wide-Band-Gap Technologies
Lausanne, EPFL, 2021.Patents
Integrated electronic device with embedded microchannels and a method for producing thereof
US2023037442; EP4078672; WO2021121560.
2021.2020
Journal Articles
Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse
IEEE Electron Device Letters. 2020. Vol. 42, num. 1, p. 86 – 89. DOI : 10.1109/LED.2020.3038808.Fully Soft-Switched High Step-Up Nonisolated Three-Port DC-DC Converter Using GaN HEMTs
Ieee Transactions On Industrial Electronics. 2020. Vol. 67, num. 10, p. 8371 – 8380. DOI : 10.1109/TIE.2019.2944068.Co-designing electronics with microfluidics for more sustainable cooling
Nature. 2020. Vol. 585, num. 7824, p. 211 – 216. DOI : 10.1038/s41586-020-2666.Co-designing electronics with microfluidics for more sustainable cooling
Nature. 2020. Vol. 585, num. 7824, p. 211 – 216. DOI : 10.1038/s41586-020-2666-1.Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes
IEEE Transactions on Power Electronics. 2020. Vol. 36, num. 2, p. 1269 – 1273. DOI : 10.1109/TPEL.2020.3008226.Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit
IEEE Journal of Emerging and Selected Topics in Power Electronics. 2020. p. 1 – 1. DOI : 10.1109/JESTPE.2020.2992946.Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses
IEEE Transactions on Power Electronics. 2020. Vol. 35, num. 12, p. 1 – 1. DOI : 10.1109/TPEL.2020.2990370.Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies
IEEE Transactions on Power Electronics. 2020. p. 1 – 1. DOI : 10.1109/TPEL.2020.2990628.Efficient High Step-up Operation in Boost Converters Based on Impulse Rectification
IEEE Transactions on Power Electronics. 2020. p. 1 – 1. DOI : 10.1109/TPEL.2020.2982931.Nanoplasma-enabled picosecond switches for ultrafast electronics
Nature. 2020. Vol. 579, num. 7800, p. 534 – 539. DOI : 10.1038/s41586-020-2118-y.Negative Resistance in Cascode Transistors
IEEE Transactions on Power Electronics. 2020. p. 1 – 1. DOI : 10.1109/TPEL.2020.2978658.Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors
IEEE Electron Device Letters. 2020. Vol. 41, num. 3, p. 321 – 324. DOI : 10.1109/LED.2020.2967458.High-Accuracy Calibration-Free Calorimeter for the Measurement of Low Power Losses
IEEE Transactions on Power Electronics. 2020. p. 1 – 1. DOI : 10.1109/TPEL.2020.3001001.Fast-switching Tri-Anode Schottky Barrier Diodes for monolithically integrated GaN-on-Si power circuits
IEEE Electron Device Letters. 2020. Vol. 41, num. 1, p. 99 – 102. DOI : 10.1109/LED.2019.2957700.Efficient Microchannel Cooling of Multiple Power Devices with Compact Flow Distribution for High Power-Density Converters
IEEE Transactions on Power Electronics. 2020. Vol. 35, num. 7, p. 7235 – 7245. DOI : 10.1109/TPEL.2019.2959736.Conference Papers
Small-Signal Approach for Precise Evaluation of Gate Losses in Soft-Switched Wide-Band-Gap Transistors
2020. 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL), Aalborg, Denmark, November 9-12, 2020. p. 1 – 5. DOI : 10.1109/COMPEL49091.2020.9265751.Calibration-Free Calorimeter for Sensitive Loss Measurements: Case of High-Frequency Inductors
2020. 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL), Aalborg, Denmark, November 9-12, 2020. p. 1 – 8. DOI : 10.1109/COMPEL49091.2020.9265756.Output-Capacitance Hysteresis Losses of Field-Effect Transistors
2020. 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL), Aalborg, Denmark, November 9-12, 2020. p. 1 – 8. DOI : 10.1109/COMPEL49091.2020.9265823.Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits
2020. 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), Orlando, FL, USA, USA, July 21-23, 2020. p. 53 – 59. DOI : 10.1109/ITherm45881.2020.9190356.Output Capacitance Losses in Wide-Band-Gap Transistors: A Small-Signal Modeling Approach
2020. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). p. 190 – 193. DOI : 10.1109/ISPSD46842.2020.9170093.Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs
2020. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, September 13-18, 2020. p. 345 – 348. DOI : 10.1109/ISPSD46842.2020.9170183.High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs
2020. 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Septembre 13-18, 2020. p. 517 – 520. DOI : 10.1109/ISPSD46842.2020.9170092.97.4%-Efficient All-GaN Dual-Active-Bridge Converter with High Step-up High-Frequency Matrix Transformer
2020. PCIM Europe digital days 2020, Online, July 7-8, 2020.Analysis of Output Capacitance Co-Energy and Discharge Losses in Hard-Switched FETs
2020. IEEE 9th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia), Nanjing, PEOPLES R CHINA, Nov 29-Dec 02, 2020. p. 52 – 59. DOI : 10.1109/IPEMC-ECCEAsia48364.2020.9367701.Mixed Simulation-Experimental Optimization of a Modular Multilevel Switched Capacitors Converter Cell
2020. IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL), Aalborg, DENMARK, Nov 09-12, 2020. p. 883 – 888. DOI : 10.1109/COMPEL49091.2020.9265665.Bringing the Heat Sink Closer to the Heat: Evaluating Die-embedded Microchannel Cooling of GaN-on-Si Power Devices
2020. 26th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), ELECTR NETWORK, 2020-09-14 – 2020-10-09. p. 18 – 24. DOI : 10.1109/THERMINIC49743.2020.9420501.Theses
AlGaN/GaN Nanowires: from Electron Transport to RF Applications
Lausanne, EPFL, 2020.2019
Journal Articles
Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires
IEEE Microwave and Wireless Components Letters. 2019. Vol. 30, num. 1, p. 66 – 69. DOI : 10.1109/LMWC.2019.2953632.New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors
IEEE Transactions on Power Electronics. 2019. p. 1 – 1. DOI : 10.1109/TPEL.2019.2958000.H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon
IEEE Electron Device Letters. 2019. p. 1 – 1. DOI : 10.1109/LED.2019.2953245.Near-junction heat spreaders for hot spot thermal management of high power density electronic devices
Journal of Applied Physics. 2019. Vol. 126, num. 16, p. 165113. DOI : 10.1063/1.5123615.Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance
IEEE Transactions on Power Electronics. 2019. p. 1 – 1. DOI : 10.1109/TPEL.2019.2938922.Impact of Fin Width on Tri-Gate GaN MOSHEMTs
IEEE Transactions on Electron Devices. 2019. Vol. 66, num. 9, p. 4068 – 4074. DOI : 10.1109/TED.2019.2925859.High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance
IEEE Electron Device Letters. 2019. Vol. 40, num. 8, p. 1289 – 1292. DOI : 10.1109/LED.2019.2922204.GaN Transistors for Miniaturized Pulsed-Power Sources
IEEE Transactions on Plasma Science. 2019. Vol. 47, num. 7, p. 3241 – 3245. DOI : 10.1109/TPS.2019.2917657.On the Dynamic Performance of Laterally Gated Transistors
IEEE Electron Device Letters. 2019. Vol. 40, num. 7, p. 1171 – 1174. DOI : 10.1109/LED.2019.2920116.Enhanced transformation of sulfonamide antibiotics by manganese(IV) oxide in the presence of model humic constituents
Water Research. 2019. Vol. 153, p. 200 – 207. DOI : 10.1016/j.watres.2019.01.011.On-Chip High-Voltage Sensors Based on Trap-Assisted 2DEG Channel Control
IEEE Electron Device Letters. 2019. Vol. 40, num. 4, p. 613 – 615. DOI : 10.1109/LED.2019.2898043.High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal
IEEE Electron Device Letters. 2019. p. 1 – 1. DOI : 10.1109/LED.2019.2896359.Fully-vertical GaN-on-Si power MOSFETs
IEEE Electron Device Letters. 2019. Vol. 40, num. 3, p. 443 – 446. DOI : 10.1109/LED.2019.2894177.Enhanced DAB for Efficiency Preservation using Adjustable-Tap High-Frequency Transformer
IEEE Transactions on Power Electronics. 2019. p. 1 – 1. DOI : 10.1109/TPEL.2019.2958632.Conference Papers
1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance
2019. 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, December 7-11, 2019. p. 4.1.1 – 4.1.4. DOI : 10.1109/IEDM19573.2019.8993536.High-performance normally-off tri-gate GaN power MOSFETs
2019. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 19-23 May 2019. p. 71 – 74. DOI : 10.1109/ISPSD.2019.8757690.Ultra-High Power Density Magnetic-less DC/DC Converter Utilizing GaN Transistors
2019. 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), Anaheim, CA, USA, 17-21 March, 2019. p. 1609 – 1615. DOI : 10.1109/APEC.2019.8721783.A manifold microchannel heat sink for ultra-high power density liquid-cooled converters
2019. 34th Annual IEEE Applied Power Electronics Conference and Exposition (APEC), Anaheim, CA, Mar 17-21, 2019. p. 1383 – 1389. DOI : 10.1109/APEC.2019.8722308.High performance Fully-vertical GaN-on-Si power MOSFETs
2019. Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019. DOI : 10.1109/ICIPRM.2019.8819025.High-performance nanowire-based E-mode Power GaN MOSHEMTs
2019. Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019. DOI : 10.1109/ICIPRM.2019.8819328.Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide
2019. Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019. DOI : 10.1109/ICIPRM.2019.8818997.Theses
Tri-gate technologies for high-performance power GaN devices
Lausanne, EPFL, 2019.2018
Journal Articles
Multi-Channel Tri-gate GaN Power Schottky Diodes with Low ON-Resistance
IEEE Electron Device Letters. 2018. Vol. 40, num. 2, p. 275 – 278. DOI : 10.1109/LED.2018.2887199.Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance
Applied Physics Letters. 2018. Vol. 113, num. 24, p. 242102. DOI : 10.1063/1.5064407.Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes
IEEE Electron Device Letters. 2018. Vol. 39, num. 7, p. 1034 – 1037. DOI : 10.1109/LED.2018.2841959.820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2
IEEE Electron Device Letters. 2018. Vol. 39, num. 3, p. 401 – 404. DOI : 10.1109/LED.2018.2793669.2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current
Applied Physics Letters. 2018. Vol. 112, num. 5, p. 052101. DOI : 10.1063/1.5012866.GaN-on-Si Quasi-Vertical Power MOSFETs
IEEE Electron Device Letters. 2018. Vol. 39, num. 1, p. 71 – 74. DOI : 10.1109/LED.2017.2779445.Electromechanics of suspended spiral capacitors and inductors
Applied Physics Letters. 2018. Vol. 112, p. 031906. DOI : 10.1063/1.5012867.1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes
IEEE Electron Device Letters. 2018. Vol. 39, num. 7, p. 1038 – 1041. DOI : 10.1109/LED.2018.2842031.Conference Papers
High Step-Up High-Frequency Zero-Voltage Switched GaN-Based Single-Stage Isolated DC-DC Converter for PV Integration and Future DC Grids
2018. PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany,645 V quasi-vertical GaN power transistors on silicon substrates
2018. 30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, May 13-17, 2018. p. 240 – 243. DOI : 10.1109/ISPSD.2018.8393647.Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain
2018. 30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, May 13-17, 2018. p. 192 – 195. DOI : 10.1109/ISPSD.2018.8393635.Monolithic integration of GaN-based NMOS digital logic gate circuits with E-mode power GaN MOSHEMTs
2018. 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, May 13-17, 2018. p. 236 – 239. DOI : 10.1109/ISPSD.2018.8393646.Patents
Semiconductor devices with multiple channels and three-dimensional electrodes
EP3539159; US10985253; EP3539159; US2019267454; WO2018087728.
2018.Semiconductor device comprising a three-dimensional field plate
US11476357; EP3520142; EP3520142; US2019229208; WO2018060918.
2018.