Integrated Thermal Management for a High-Power-Density Silicon Carbide Power Module With Die-Level Heat Flux Over 1000 W/cm2

W. Tang; X. Huang; Z. Chen; K. Sheng; Z. Wu 

Low‐Power Tunable Micro‐Plasma Device for Efficient and Scalable CO₂ Valorization

B. Karakurt; H. Zhu; O. Soydal; G. Sun; J. S. Luterbacher et al. 

Dynamic Charge Transport Behavior of Double-layer Thin Film Materials Under Electron Beam Irradiation

W-T. An; B-P. Song; G-Y. Sun; X. Yang; K-H. Cao et al. 

p-NiO/LiNiO-GaN heterojunctions: a potential alternative to p-GaN for advanced devices

Z. Hao; A. Floriduz; Y. Zong; U. Choi; M. Mensi et al. 

A review of thermal management of batteries with a focus on immersion cooling

Z. Xin; W. Tang; W. Yao; Z. Wu 

Soft-Switching CO Hysteresis Losses in GaN HEMTs: A Resonant-Sawyer-Tower Measurement Method

H. Zhu; Y. Zong; Y. B. S. Al-Nuaimee; Y. S. Codjia; E. Matioli 

In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l

R. Van Erp; N. Perera; L. Nela; I. Osama Elhagali; H. Zhu et al. 

Numerical study on a new manifold ring-shaped microchannel structure for circular heat source with excellent temperature uniformity

Z. Xin; W. Tang; Z. Wu; Y. Wang; L. Luo et al. 

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

A. Floriduz; U. Choi; E. Matioli 

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

A. Floriduz; Z. Hao; E. Matioli 

Chip-Scale Watt-Range Terahertz Generation Based on Fast Transition in Nanoplasma Switches

M. Rezaei; E. Matioli; M. Rezaei; E. Matioli 

Direct high-temperature MOCVD growth of GaN on foreign substrates

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

H. Zhu; E. Matioli 

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

S. Bhadoria; F. Dijkhuizen; R. Raj; X. Wang; Q. Xu et al. 

Electronic metadevices for terahertz applications

M. S. Nikoo; E. Matioli 

Measurement of WBG-based power supplies

H. Zhu; A. Jafari; K. Machtinger; M. Makoschitz; E. Matioli 

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

E. Matioli; H. Zhu; N. Perera; M. S. Nikoo; A. Jafari et al. 

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

A. Floriduz; E. Matioli 

Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing

M. Samizadeh Nikoo; R. Soleiman; A. Krammer; G. Migliato Marega; Y. Park et al. 

Nanoplasma-based Millimiter-wave Modulators on a Single Metal Layer

M. Samizadeh Nikoo; M. O. Dilmaghanian; F. Farzaneh; E. Matioli 

A perspective on multi-channel technology for the next-generation of GaN power devices

L. Nela; M. Xiao; Y. Zhang; E. Matioli 

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

A. Floriduz; E. Matioli 

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

L. Nela; C. Erine; A. Miran Zadeh; E. Matioli 

A Generalized Phase-Shift PWM Extension for Improved Natural and Active Balancing of Flying Capacitor Multilevel Inverters

G. Kampitsis; E. Batzelis; A. Kolokasis; E. Matioli; B. C. Pal 

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

T. Wang; Y. Zong; L. Nela; E. Matioli 

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

L. Nela; C. Erine; E. Matioli 

Beyond 8 THz Displacement-field Nano-switches for 5G and 6G Communications

M. Samizadeh Nikoo; T. Wang; P. Sohi; M. Zhu; F. Qaderi et al. 

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Hard-Switching Losses in Power FETs: The Role of Output Capacitance

N. Perera; A. Jafari; R. Soleiman; N. Bollier; S. G. Abeyratne et al. 

GaN-based power devices: Physics, reliability, and perspectives

M. Meneghini; C. De Santi; I. Abid; M. Buffolo; M. Cioni et al. 

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

L. Nela; C. Erine; M. V. Oropallo; E. Matioli 

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

L. Nela; R. F. P. van Erp; N. Perera; A. Jafari; C. Erine et al. 

Seed Dibbling Method for the Grow of High-Quality Diamond on GaN

R. Soleimanzadeh; M. Naamoun; A. Floriduz; R. A. Khadar; R. van Erp et al. 

p-NiO junction termination extensions for GaN power devices

R. A. Khadar; A. Floriduz; T. Wang; E. Matioli 

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

L. Nela; N. Perera; C. Erine; E. Matioli 

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

P. Sohi; Carlin; M. D. Rossell; R. Erni; N. Grandjean et al. 

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

R. Abdul Khadar; A. Floriduz; C. Liu; R. Soleimanzadeh; E. Matioli 

Multi-channel nanowire devices for efficient power conversion

L. Nela; J. Ma; C. Erine; P. Xiang; T. -H. Shen et al. 

Kilowatt-range Picosecond Switching Based on Microplasma Devices

M. Samizadeh Nikoo; A. Jafari; R. Van Erp; E. Matioli 

Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs

M. Samizadeh Nikoo; R. A. Khadar; A. Jafari; M. Zhu; E. Matioli 

Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies (vol 35, pg 12595, 2020)

A. Jafari; M. Samizadeh Nikoo; N. Perera; H. K. Yildirim; F. Karakaya et al. 

Parallel PV Configuration with Magnetic-Free Switched Capacitor Module-Level Converters for Partial Shading Conditions

G. Kampitsis; E. Batzelis; R. F. P. van Erp; E. Matioli 

Optimized kW-Range Boost Converter Based on Impulse Rectification with 52 kW/l and 98.6% Efficiency

A. Jafari; M. Samizadeh Nikoo; R. Van Erp; E. Matioli 

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

M. Zhu; C. Erine; J. Ma; M. S. Nikoo; L. Nela et al. 

Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters

N. Perera; R. van Erp; J. Ancay; A. Jafari; E. Matioli 

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

L. Nela; C. Erine; J. Ma; H. K. Yildirim; R. F. P. van Erp et al. 

Enhanced-DAB Converter: Comprehensive Design Evaluation

A. Jafari; M. Samizadeh Nikoo; F. Karakaya; E. Matioli 

Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

M. Samizadeh Nikoo; A. Jafari; N. Perera; H. K. Yildirim; E. Matioli 

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

T. Wang; M. S. Nikoo; L. Nela; E. Matioli 

Microchannel-based Calorimeter for Rapid and Accurate Loss Measurements on High-efficiency Power Converters

R. van Erp; N. Perera; E. Matioli 

p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices

R. A. Khadar; A. Floriduz; T. Wang; C. Erine; R. van Erp et al. 

Embedded Microchannel Cooling for Monolithically-integrated GaN Half-bridge ICs

R. van Erp; N. Perera; L. Nela; E. Matioli 

Radio Frequency Temperature Transducers Based On Insulator-Metal Phase Transition In Vo2 And Ge-Doped Vo2 Ald Thin Films

A. A. Muller; R. Khadar; K. M. Niang; G. Bai; E. Matioli et al. 

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Diamond on GaN integration for power semiconductor devices with efficient thermal management

GaN vertical power devices on silicon substrates

Heterostructure design and field management in III-N high-electron mobility electronic devices

Pushing the Limits of Efficiency and Power Density in High-Frequency Power Conversion Based on Wide-Band-Gap Technologies

Integrated electronic device with embedded microchannels and a method for producing thereof

E. D. N. Matioli; R. F. P. Van Erp 

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

L. Nela; H. K. Yildirim; C. Erine; R. F. P. van Erp; P. Xiang et al. 

Fully Soft-Switched High Step-Up Nonisolated Three-Port DC-DC Converter Using GaN HEMTs

R. Faraji; H. Farzanehfard; G. Kampitsis; M. Mattavelli; E. Matioli et al. 

Co-designing electronics with microfluidics for more sustainable cooling

R. F. P. van Erp; R. Soleiman Zadeh Ardebili; L. Nela; G. Kampitsis; E. Matioli 

Co-designing electronics with microfluidics for more sustainable cooling

R. van Erp; R. Soleimanzadeh; L. Nela; G. Kampitsis; E. Matioli 

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes

L. Nela; R. F. P. van Erp; G. Kampitsis; H. K. Yildirim; J. Ma et al. 

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

N. Perera; G. Kampitsis; R. Van Erp; J. Ancay; A. Jafari et al. 

Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

N. Perera; M. Samizadeh Nikoo; A. Jafari; L. Nela; E. Matioli 

Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies

A. Jafari; M. Samizadeh; N. Perera; H. K. Yildirim; F. Karakaya et al. 

Efficient High Step-up Operation in Boost Converters Based on Impulse Rectification

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

Nanoplasma-enabled picosecond switches for ultrafast electronics

M. Samizadeh Nikoo; A. Jafari; N. Perera; M. Zhu; G. Santoruvo et al. 

Negative Resistance in Cascode Transistors

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

C. Erine; J. Ma; G. Santoruvo; E. Matioli 

High-Accuracy Calibration-Free Calorimeter for the Measurement of Low Power Losses

A. Jafari; M. Heijnemans; R. Soleiman Zadeh Ardebili; R. van Erp; M. Samizadeh Nikoo et al. 

Fast-switching Tri-Anode Schottky Barrier Diodes for monolithically integrated GaN-on-Si power circuits

L. Nela; G. kampitsis; J. Ma; E. Matioli 

Efficient Microchannel Cooling of Multiple Power Devices with Compact Flow Distribution for High Power-Density Converters

R. Van Erp; G. Kampitsis; E. Matioli 

Small-Signal Approach for Precise Evaluation of Gate Losses in Soft-Switched Wide-Band-Gap Transistors

A. Jafari; M. S. Nikoo; N. Perera; F. Karakaya; R. Soleimanzadeh et al. 

Calibration-Free Calorimeter for Sensitive Loss Measurements: Case of High-Frequency Inductors

A. Jafari; M. Heijnemans; R. Soleimanzadeh; R. van Erp; M. Samizadeh Nikoo et al. 

Output-Capacitance Hysteresis Losses of Field-Effect Transistors

N. Perera; A. Jafari; L. Nela; G. Kampitsis; M. S. Nikoo et al. 

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

R. F. P. van Erp; G. Kampitsis; L. Nela; R. Soleiman Zadeh Ardebili; E. Matioli 

Output Capacitance Losses in Wide-Band-Gap Transistors: A Small-Signal Modeling Approach

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs

M. Zhu; J. Ma; E. Matioli 

High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs

L. Nela; G. Kampitsis; h. yildirim; R. F. P. van Erp; J. Ma et al. 

97.4%-Efficient All-GaN Dual-Active-Bridge Converter with High Step-up High-Frequency Matrix Transformer

A. Jafari; M. Samizadeh Nikoo; F. Karakya; N. Perera; E. Matioli 

Analysis of Output Capacitance Co-Energy and Discharge Losses in Hard-Switched FETs

N. Perera; N. Bollier; E. Figini; R. Soleimanzadeh; R. van Erp et al. 

Mixed Simulation-Experimental Optimization of a Modular Multilevel Switched Capacitors Converter Cell

G. Kampitsis; M. Chevron; R. van Erp; N. Perera; S. Papathanassiou et al. 

Bringing the Heat Sink Closer to the Heat: Evaluating Die-embedded Microchannel Cooling of GaN-on-Si Power Devices

R. van Erp; G. Kampitsis; L. Nela; R. Soleimanzadeh; N. Perera et al. 

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires

G. Santoruvo; M. Samizadeh Nikoo; E. Matioli 

New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

R. Soleimanzadeh; M. Naamoun; R. A. Khadar; R. van Erp; E. Matioli 

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

R. Soleimanzadeh; R. A. Khadar; M. Naamoun; R. van Erp; E. Matioli 

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

J. Ma; G. Santoruvo; L. Nela; T. Wang; E. Matioli 

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

M. Zhu; J. Ma; L. Nela; C. Erine; E. Matioli 

GaN Transistors for Miniaturized Pulsed-Power Sources

M. Samizadeh Nikoo; A. Jafari; E. Matioli 

On the Dynamic Performance of Laterally Gated Transistors

M. Samizadeh Nikoo; G. Santoruvo; C. Erine; A. Jafari; E. Matioli 

Enhanced transformation of sulfonamide antibiotics by manganese(IV) oxide in the presence of model humic constituents

Y. Song; J. Jiang; J. Ma; Y. Zhou; U. von Gunten 

On-Chip High-Voltage Sensors Based on Trap-Assisted 2DEG Channel Control

M. Samizadeh Nikoo; A. Jafari; E. Matioli 

High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal

L. Nela; M. Zhu; J. Ma; E. Matioli 

Fully-vertical GaN-on-Si power MOSFETs

R. A. Khadar; C. Liu; R. Soleimanzadeh; E. Matioli 

Enhanced DAB for Efficiency Preservation using Adjustable-Tap High-Frequency Transformer

A. Jafari; M. Samizadeh Nikoo; F. Karakaya; E. Matioli 

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

J. Ma; C. Erine; M. Zhu; N. Luca; P. Xiang et al. 

High-performance normally-off tri-gate GaN power MOSFETs

M. Zhu; J. Ma; L. Nela; E. Matioli 

Ultra-High Power Density Magnetic-less DC/DC Converter Utilizing GaN Transistors

G. Kampitsis; R. v. Erp; E. Matioli 

A manifold microchannel heat sink for ultra-high power density liquid-cooled converters

R. van Erp; G. Kampitsis; E. Matioli 

High performance Fully-vertical GaN-on-Si power MOSFETs

R. M. A. Khadar; C. Liu; R. Soleimanzadeh; E. Matioli 

High-performance nanowire-based E-mode Power GaN MOSHEMTs

L. Nela; M. Zhu; J. Ma; E. Matioli 

Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide

T. Wang; L. Nela; J. Ma; E. Matioli 

Tri-gate technologies for high-performance power GaN devices

Multi-Channel Tri-gate GaN Power Schottky Diodes with Low ON-Resistance

J. Ma; G. Kampitsis; P. Xiang; K. Cheng; E. Matioli 

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

J. Ma; C. Erine; P. Xiang; K. Cheng; E. Matioli 

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

C. Liu; R. Abdul Khadar; E. Matioli 

820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2

R. A. Khadar; C. Liu; L. Zhang; P. Xiang; K. Cheng et al. 

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

J. Ma; E. Matioli 

GaN-on-Si Quasi-Vertical Power MOSFETs

C. Liu; R. Abdul Khadar; E. Matioli 

Electromechanics of suspended spiral capacitors and inductors

S. Khorasani 

1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

T. Wang; J. Ma; E. Matioli 

High Step-Up High-Frequency Zero-Voltage Switched GaN-Based Single-Stage Isolated DC-DC Converter for PV Integration and Future DC Grids

A. Jafari; E. Matioli 

645 V quasi-vertical GaN power transistors on silicon substrates

C. Liu; R. A. Khadar; E. Matioli 

Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain

J. Ma; E. Matioli 

Monolithic integration of GaN-based NMOS digital logic gate circuits with E-mode power GaN MOSHEMTs

M. Zhu; E. Matioli 

Semiconductor devices with multiple channels and three-dimensional electrodes

E. D. N. Matioli; J. Ma 

Semiconductor device comprising a three-dimensional field plate

E. D. N. Matioli; J. Ma 

High Performance Tri-gate GaN Power MOSHEMTs on Silicon Substrate

J. Ma; E. Matioli 

Slanted Tri-gates for High-Voltage GaN Power Devices

J. Ma; E. Matioli 

In-Plane-Gate GaN Transistors for High-Power RF Applications

G. Santoruvo; E. Matioli 

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

J. Ma; M. Zhu; E. Matioli 

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

J. Ma; E. Matioli 

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-Off Voltage

J. Ma; D. C. Zanuz; E. Matioli 

Internal Quantum Efficiency in Light-Emitting Diodes

E. Matioli; C. Weisbuch 

GaN-Based Nanowire Transistors

E. Matioli; B. Lu; D. Piedra; T. Palacios 

Magneto-ballistic transport in GaN nanowires

G. Santoruvo; A. Allain; D. Ovchinnikov; E. Matioli 

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

J. Ma; G. Santoruvo; P. Tandon; E. Matioli 

Compound Semiconductors Preface

T. Palacios; E. Matioli; R. Myers; S. Rajan; H. Wang 

Improved electrical and thermal performances in nanostructured GaN devices

J. Ma; E. Matioli 

Room-Temperature Ballistic Transport in III-Nitride Heterostructures

E. Matioli; T. Palacios 

Advanced power electronic devices based on Gallium Nitride (GaN)

D. Piedra; B. Lu; M. Sun; Y. Zhang; E. Matioli et al. 

Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

J. Sakaguchi; T. Araki; T. Fujishima; E. Matioli; T. Palacios et al. 

Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure

E. Matioli; B. Lu; T. Palacios 

Active Region Part A. Internal Quantum Efficiency in LEDs

E. Matioli; C. Weisbuch 

Nitride-based electron devices for high-power/high-frequency applications

Y. Cordier; T. Fujishima; B. Lu; E. Matioli; T. Palacios 

High-brightness polarized light-emitting diodes

E. Matioli; S. Brinkley; K. M. Kelchner; Y-L. Hu; S. Nakamura et al. 

Tri-Gate Normally-Off GaN Power MISFET

B. Lu; E. Matioli; T. Palacios 

Low Leakage Normally-off Tri-gate GaN MISFET

B. Lu; E. Matioli; T. Palacios 

Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes

E. Rangel; E. Matioli; Y-S. Choi; C. Weisbuch; J. S. Speck et al. 

High internal and external quantum efficiency InGaN/GaN solar cells

E. Matioli; C. Neufeld; M. Iza; S. C. Cruz; A. A. Al-Heji et al. 

High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

J. R. Lang; C. J. Neufeld; C. A. Hurni; S. C. Cruz; E. Matioli et al. 

Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals

E. Matioli; S. Brinkley; K. M. Kelchner; S. Nakamura; S. Denbaars et al. 

Direct measurement of internal quantum efficiency in light emitting diodes under electrical injection

E. Matioli; C. Weisbuch 

YAG:Ce nanoparticle based converter layer for white LEDs

A. Revaux; G. Dantelle; S. Brinkley; E. Matioli; C. Weisbuch et al. 

Impact of the Vertical Layer Structure on the Emission Directionality of Thin-Film InGaN Photonic Crystal LEDs

E. Rangel; E. Matioli; H-T. Chen; C. Weisbuch; J. S. Speck et al. 

Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes

E. Rangel; E. Matioli; H-T. Chen; Y-S. Choi; C. Weisbuch et al. 

Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes

E. Matioli; B. Fleury; E. Rangel; E. Hu; J. Speck et al. 

High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes: Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals

E. Matioli; B. Fleury; E. Rangel; T. Melo; E. Hu et al. 

CdSe Nanorods Dominate Photocurrent of Hybrid CdSe-P3HT Photovoltaic Cell

M. Schierhorn; S. W. Boettcher; J. H. Peet; E. Matioli; G. C. Bazan et al. 

Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs

E. Matioli; C. Weisbuch 

High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals

E. Matioli; E. Rangel; M. Iza; B. Fleury; N. Pfaff et al. 

Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal

T. A. Truong; L. M. Campos; E. Matioli; I. Meinel; C. J. Hawker et al. 

Growth of embedded photonic crystals for GaN-based optoelectronic devices

E. Matioli; S. Keller; F. Wu; Y-S. Choi; E. Hu et al. 

Electroluminescent measurement of the internal quantum efficiency of light emitting diodes

A. Getty; E. Matioli; M. Iza; C. Weisbuch; J. S. Speck 

GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization

E. Matioli; M. Iza; Y-S. Choi; F. Wu; S. Keller et al. 

Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes

K. Mcgroddy; A. David; E. Matioli; M. Iza; S. Nakamura et al. 

GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

A. David; B. Moran; K. Mcgroddy; E. Matioli; E. L. Hu et al. 

Submicron-thick microcavity InGaN light emitting diodes

Y. Choi; M. Iza; E. Matioli; G. Koblmuller; J. Speck et al. 

2.5 lambda microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process

Y-S. Choi; M. Iza; E. Matioli; G. Koblmueller; J. S. Speck et al. 

Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells

S. Keller; N. A. Fichtenbaum; C. Schaake; C. J. Neufeld; A. David et al. 

GaN light-emitting diodes with Archimedean lattice photonic crystals

A. David; T. Fujii; E. Matioli; R. Sharma; S. Nakamura et al. 

Omnidirectional light extraction in GaN LEDs using an Archimedean tiling photonic crystal

A. David; T. Fujii; E. Matioli; R. Sharma; S. Nakamura et al.