AZ 1512 HS is a thin photoresist designed for fast and reproducible photolithography, with high contrast and high development rate as well as improved substrate adhesion. It is the standard resist choice for photolithography steps with no strict requirements in terms of resolution, sidewall profile or thickness.
AZ ECI 3007 is a thin (0.6 to 1.5 um) chemically amplified i-line photoresist designed for high resolution photolithography and accurate pattern transfer. It is the standard resist choice to reach critical dimensions (CD) < 1um with mask-aligners in vaccum contact mode or the VPG200 laser writer.
AZ ECI 3027 is a chemically amplified i-line photoresist from the AZ ECI family. With an intermediate thickness range (2 to 5 um), it is a good resist choice for dry-etching applications with moderate etching depth but requiring accurate control of the pattern dimensions.
AZ 10XT-20 is a photoresist from the AZ 10XT family (which replaces the old AZ9200 line of products) with a thickness range from 2um to 4um. It is the standard resist choice for dry etching applications requiring steep sidewalls. Transfer of critical dimensions from the mask/design is not accurate and will require the introduction of CD biases (~800nm).
AZ 10XT-60 is a thick photoresist from the AZ 10XT family (which replaces the old AZ9200 line of products). With steep sidewalls and high aspect ratio, it is the ideal resist choice for deep etching of silicon (Bosch process). Transfer of critical dimensions from the mask/design is not accurate and will require the introduction of CD biases (~800nm).
AZ 40XT is a chemically amplified ultrathick positive photoresist, requiring low exposure doses and with high development rate. The field of applications of the resist starts at 15-30 µm, where photolithography processes with conventional positive resists become very time-consuming due to increasing delays for rehydratation or N2-outgassing, both not required for this resist. This resist is recommended for deep etching in harsh environnment.
AZ nLOF 2020 is a negative photoresist, whereby the exposed resist remains after development with an adjustable undercut. The negative profile in combination with its high softening point makes AZ nLOF 2020 a well-suited resist for lift-off aswell as for any other processes requiring resist structures with high to very high thermal stability.
AZ nLOF 2070 is a thick negative photoresist, whereby the exposed resist remains after development with an adjustable undercut. AZ nLOF 2070 achieve thicker films and more pronounced undercut, compared to AZ nLOF 2020, which makes it ideal for lift-off of extremely thick metal stacks (up to 2-3um), or metal stacks deposited in conformal deposition equipment.
AZ 15 nXT is a cross-linking negative resist for resist film thicknesses up to approximatively 30 µm. The high stability and superior adhesion make the AZ 15 nXT well suited for most deep etching and electroplating applications. The resist sidewalls are very steep.
LOR (Lift-Off Resist) 5A is a polymer which dissolve in alkaline solutions. LOR 5A, used as sacrificial material, can be underetched with standard photoresist developers (TMAH- or KOH-based) just by extending the development time of the imaging top resist (AZ 1512 HS, AZ ECI 3007). This method is known as the double layer lift-off or bi-layer lift-off. Extreme resist profile can be obtained, enabling efficient lift-off of evaporated or even sputtered material.
LOR (Lift-Off Resist) 15C is a polymer which dissolve in alkaline solutions. LOR 15C, used as sacrificial material, can be underetched with standard photoresist developers (TMAH- or KOH-based) just by extending the development time of the imaging top resist (AZ ECI 3027). This method is known as the double layer lift-off or bi-layer lift-off. Extreme resist profile can be obtained, enabling efficient lift-off of evaporated or even sputtered material.
XHRiC (16cP) is a thin (~160nm), conformal bottom anti-reflection coating (BARC) that helps reducing standing waves in the exposed i-line resist in order to improve resolution, resist profiles (reduced LER), process stability and CD control. The film has high absorption at the exposure wavelength (λ = 365nm) to prevent any backside reflections. After the photoresist development step, XHRiC is etched down with conventional plasma chemistries.
MC PC62E is used for wafer surface protection during physical or chemical related processes. It has the same base polymer than common i-line photoresist but without the photosensitive component, therefore it cannot be patterned through exposition.
