Journal Articles

CVD graphene contacts for lateral heterostructure MoS2 field effect transistors

D. S. Schneider; L. Lucchesi; E. Reato; Z. Wang; A. Piacentini et al. 

Npj 2D Materials And Applications. 2024-05-10. Vol. 8, num. 1, p. 35. DOI : 10.1038/s41699-024-00471-y.

High-κ Wide-Gap Layered Dielectric for Two-Dimensional van der Waals Heterostructures

A. Söll; E. Lopriore; A. K. Ottesen; J. Luxa; G. Pasquale et al. 

ACS Nano. 2024-04-01. Vol. 18, num. 15, p. 10397-10406. DOI : 10.1021/acsnano.3c10411.

Nanofluidic logic with mechano-ionic memristive switches

T. Emmerich; Y. Teng; N. Ronceray; E. Lopriore; R. Chiesa et al. 

Nature Electronics. 2024-03-19. DOI : 10.1038/s41928-024-01137-9.

Composition-tunable transition metal dichalcogenide nanosheets via a scalable, solution-processable method

R. A. Wells; N. J. Diercks; V. Boureau; Z. Wang; Y. Zhao et al. 

Nanoscale Horizons. 2024-01-30. DOI : 10.1039/d3nh00477e.


Journal Articles

A large-scale integrated vector–matrix multiplication processor based on monolayer molybdenum disulfide memories

G. Migliato Marega; H. G. Ji; Z. Wang; G. Pasquale; M. Tripathi et al. 

Nature Electronics. 2023. DOI : 10.1038/s41928-023-01064-1.

Disorder-induced bulk photovoltaic effect in a centrosymmetric van der Waals material

C-Y. Cheon; Z. Sun; J. Cao; J. F. Gonzalez Marin; M. Tripathi et al. 

npj 2D Materials and Applications. 2023. Vol. 7, p. 74 (2023). DOI : 10.1038/s41699-023-00435-8.

How to Achieve Large-Area Ultra-Fast Operation of MoS 2 Monolayer Flash Memories?

G. M. Marega; Z. Wang; Y. Zhao; H. G. Ji; A. Ottesen et al. 

IEEE Nanotechnology Magazine. 2023.  p. 1-5. DOI : 10.1109/MNANO.2023.3297118.

Electrical detection of the flat-band dispersion in van der Waals field-effect structures

G. Pasquale; E. Lopriore; Z. Sun; K. Čerņevičs; F. Tagarelli et al. 

Nature Nanotechnology. 2023. DOI : 10.1038/s41565-023-01489-x.

Electrically tunable dipolar interactions between layer-hybridized excitons

D. Erkensten; S. Brem; R. Perea-Causin; J. Hagel; F. Tagarelli et al. 

Nanoscale. 2023-06-13. DOI : 10.1039/d3nr01049j.

Electrical control of hybrid exciton transport in a van der Waals heterostructure

F. Tagarelli; E. Lopriore; D. Erkensten; R. Perea-Causín; S. Brem et al. 

Nature Photonics. 2023-04-20. DOI : 10.1038/s41566-023-01198-w.

High durability and stability of 2D nanofluidic devices for long-term single-molecule sensing

M. Thakur; N. Cai; M. Zhang; Y. Teng; A. Chernev et al. 

Npj 2D Materials And Applications. 2023-02-23. Vol. 7, num. 1, p. 11. DOI : 10.1038/s41699-023-00373-5.

Substitutional p‐type Doping in NbS2‐MoS2 Lateral Heterostructures Grown by MOCVD

Z. Wang; M. Tripathi; Z. Golsanamlou; P. Kumari; G. Lovarelli et al. 

Advanced Materials. 2023-01-16.  p. 2209371. DOI : 10.1002/adma.202209371.

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Y. Zhao; M. Tripathi; K. Čerņevičs; A. Avsar; H. G. Ji et al. 

Nature Communications. 2023-01-03. Vol. 14, num. 1, p. 44. DOI : 10.1038/s41467-022-35651-1.


Dataset for the paper High durability and stability of 2D nanofluidic devices for long-term single-molecule sensing

M. Thakur; N. Cai; M. Zhang; Y. Teng; A. Chernev et al. 



Journal Articles

Flat-Band-Induced Many-Body Interactions and Exciton Complexes in a Layered Semiconductor

Z. Wang; C-Y. Cheon; M. Tripathi; G. M. Marega; Y. Zhao et al. 

Nano Letters. 2022-11-08. Vol. 22, num. 22, p. 8883–8891. DOI : 10.1021/acs.nanolett.2c02965.

Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS2

G. Giusi; G. M. Marega; A. Kis; G. Iannaccone 

Ieee Transactions On Electron Devices. 2022-10-05. DOI : 10.1109/TED.2022.3208804.

Room-temperature electrical control of polarization and emission angle in a cavity-integrated 2D pulsed LED

J. F. Gonzalez Marin; D. Unuchek; Z. Sun; C. Y. Cheon; F. Tagarelli et al. 

Nature Communications. 2022-08-19. Vol. 13, num. 1, p. 1-9, 4884. DOI : 10.1038/s41467-022-32292-2.

Stable Al2O3 Encapsulation of MoS2 ‐FETs Enabled by CVD Grown h‐BN

A. Piacentini; D. Marian; D. S. Schneider; E. González Marín; Z. Wang et al. 

Advanced Electronic Materials. 2022-04-29.  p. 2200123. DOI : 10.1002/aelm.202200123.

Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates

E. Reato; P. Palacios; B. Uzlu; M. Saeed; A. Grundmann et al. 

Advanced Materials. 2022-02-17.  p. 2108469. DOI : 10.1002/adma.202108469.

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

G. Migliato Marega; Z. Wang; M. Paliy; G. Giusi; S. Strangio et al. 

ACS Nano. 2022-02-16. DOI : 10.1021/acsnano.1c07065.

Excitonic transport driven by repulsive dipolar interaction in a van der Waals heterostructure

Z. Sun; A. Ciarrocchi; F. Tagarelli; J. F. Gonzalez Marin; K. Watanabe et al. 

Nature Photonics. 2022. Vol. 16, p. 79–85. DOI : 10.1038/s41566-021-00908-6.


Excitonic devices with van der Waals heterostructures: valleytronics meets twistronics

A. Ciarrocchi; F. Tagarelli; A. Avsar; A. Kis 

Nature Reviews Materials. 2022-01-31. Vol. 7, p. 449–464. DOI : 10.1038/s41578-021-00408-7.


Journal Articles

How we made the 2D transistor

A. Kis 

Nature Electronics. 2021-11-12. Vol. 4, p. 853. DOI : 10.1038/s41928-021-00675-w.

Superconducting 2D NbS2 Grown Epitaxially by Chemical Vapor Deposition

Z. Wang; C-Y. Cheon; M. Tripathi; G. M. Marega; Y. Zhao et al. 

ACS Nano. 2021-11-10. Vol. 15, num. 11, p. 18403–18410. DOI : 10.1021/acsnano.1c07956.

Correlating chemical and electronic states from quantitative photoemission electron microscopy of transition-metal dichalcogenide heterostructures

O. Renault; H. Kim; D. Dumcenco; D. Unuchek; N. Chevalier et al. 

Journal of Vacuum Science & Technology. 2021-08-18. Vol. A39, num. 5, p. 053210. DOI : 10.1116/6.0001135.

Super-resolved Optical Mapping of Reactive Sulfur-Vacancies in Two-Dimensional Transition Metal Dichalcogenides

M. Zhang; M. Lihter; T-H. Chen; M. Macha; A. Rayabharam et al. 

Acs Nano. 2021-04-27. Vol. 15, num. 4, p. 7168-7178. DOI : 10.1021/acsnano.1c00373.

Electrochemical Functionalization of Selectively Addressed MoS2 Nanoribbons for Sensor Device Fabrication

M. Lihter; M. Graf; D. Ivekovic; M. Zhang; T-H. Shen et al. 

Acs Applied Nano Materials. 2021-02-26. Vol. 4, num. 2, p. 1076-1084. DOI : 10.1021/acsanm.0c02628.


Journal Articles

Logic-in-memory based on an atomically thin semiconductor

G. Migliato Marega; Y. Zhao; A. Avsar; Z. Wang; M. Tripathi et al. 

Nature. 2020-11-05. Vol. 587, num. 7832, p. 72-77. DOI : 10.1038/s41586-020-2861-0.

Probing magnetism in atomically thin semiconducting PtSe2

A. Avsar; C-Y. Cheon; M. Pizzochero; M. Tripathi; A. Ciarrocchi et al. 

Nature Communications. 2020-09-23. Vol. 11, num. 1, p. 4806. DOI : 10.1038/s41467-020-18521-6.

Strongly Coupled Coherent Phonons in Single-Layer MoS2

C. Trovatello; H. P. C. Miranda; A. Molina-Sanchez; R. Borrego-Varillas; C. Manzoni et al. 

Acs Nano. 2020-05-26. Vol. 14, num. 5, p. 5700-5710. DOI : 10.1021/acsnano.0c00309.

Wafer-Scale Fabrication of Nanopore Devices for Single-Molecule DNA Biosensing using MoS2

M. Thakur; M. Macha; A. Chernev; M. Graf; M. Lihter et al. 

Small Methods. 2020-05-11.  p. 2000072. DOI : 10.1002/smtd.202000072.

Quantitative Mapping of the Charge Density in a Monolayer of MoS2 at Atomic Resolution by Off-Axis Electron Holography

V. Boureau; B. Sklenard; R. McLeod; D. Ovchinnikov; D. Dumcenco et al. 

ACS Nano. 2020. Vol. 14, num. 1, p. 524–530. DOI : 10.1021/acsnano.9b06716.


Production and processing of graphene and related materials

C. Backes; A. M. Abdelkader; C. Alonso; A. Andrieux-Ledier; R. Arenal et al. 

2D Materials. 2020-01-30. Vol. 7, num. 2, p. 022001. DOI : 10.1088/2053-1583/ab1e0a.


Journal Articles

Quantitative Nanoscale Absorption Mapping: A Novel Technique To Probe Optical Absorption of Two-Dimensional Materials

M. Negri; L. Francaviglia; D. Dumcenco; M. Bosi; D. Kaplan et al. 

Nano Letters. 2019-12-24. Vol. 20, num. 1, p. 567-576. DOI : 10.1021/acs.nanolett.9b04304.

Waveguide-Based Platform for Large-FOV Imaging of Optically Active Defects in 2D Materials

E. Glushkov; A. Archetti; A. Stroganov; J. Comtet; M. Thakur et al. 

Acs Photonics. 2019-12-01. Vol. 6, num. 12, p. 3100-3107. DOI : 10.1021/acsphotonics.9b01103.

Valley-polarized exciton currents in a van der Waals heterostructure

D. Unuchek; A. Ciarrocchi; A. Avsar; Z. Sun; K. Watanabe et al. 

Nature Nanotechnology. 2019-10-21. Vol. 14, p. 1104–1109. DOI : 10.1038/s41565-019-0559-y.

Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

H. Cun; M. Macha; H. Kim; K. Liu; Y. Zhao et al. 

Nano Research. 2019-10-01. Vol. 12, num. 10, p. 2646-2652. DOI : 10.1007/s12274-019-2502-9.

Self-sensing, tunable monolayer MoS2 nanoelectromechanical resonators

S. Manzeli; D. Dumcenco; G. Migliato Marega; A. Kis 

Nature Communications. 2019-10-23. Vol. 10, num. 1, p. 4831. DOI : 10.1038/s41467-019-12795-1.

Light-Enhanced Blue Energy Generation Using MoS2 Nanopores

M. Graf; M. Lihter; D. Unuchek; A. Sarathy; J-P. Leburton et al. 

Joule. 2019-06-19. Vol. 3, num. 6, p. 1549-1564. DOI : 10.1016/j.joule.2019.04.011.

Defect induced, layer-modulated magnetism in ultrathin metallic PtSe2

A. Avsar; A. Ciarrocchi; M. Pizzochero; D. Unuchek; O. V. Yazyev et al. 

Nature Nanotechnology. 2019-06-17. Vol. 14, p. 674–678. DOI : 10.1038/s41565-019-0467-1.

MoS2 photodetectors integrated with photonic circuits

J. F. Gonzalez Marin; D. Unuchek; K. Watanabe; T. Taniguchi; A. Kis 

npj 2D Materials and Applications. 2019-03-29. Vol. 3, num. 1, p. 14. DOI : 10.1038/s41699-019-0096-4.

Non equilibrium anisotropic excitons in atomically thin ReS2

J. M. Urban; M. Baranowski; A. Kuc; L. Klopotowski; A. Surrente et al. 

2D Materials. 2019-01-01. Vol. 6, num. 1, p. 015012. DOI : 10.1088/2053-1583/aae9b9.

Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography

X. Zheng; A. Calò; E. Albisetti; X. Liu; A. S. M. Alharbi et al. 

Nature Electronics. 2019-01-16. Vol. 2, num. 1, p. 17-25. DOI : 10.1038/s41928-018-0191-0.

Conference Papers

Excitonic Effects in Single Layer MoS2 Probed by Broadband Two-dimensional Electronic Spectroscopy

M. Maiuri; S. Dal Conte; M. Russo; J. Wang; G. Soavi et al. 

2019-01-01. Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, May 05-10, 2019. DOI : 10.1364/CLEO_QELS.2019.FW3M.4.


Development of graphene-based ionizing radiation sensors

G. Batignani; S. Bettarini; G. Borghi; M. Boscardin; A. Ciarrocchi et al. 

Nuclear Instruments & Methods In Physics Research Section A-Accelerators Spectrometers Detectors And Associated Equipment. 2019-08-21. Vol. 936, p. 666-668. DOI : 10.1016/j.nima.2018.08.088.


Excitonic device and operating methods thereof

D. Unuchek; A. Ciarrocchi; A. Avsar; A. Kis 

US2021217919; WO2019229653.



Journal Articles

Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures

A. Ciarrocchi; D. Unuchek; A. Avsar; K. Watanabe; T. Taniguchi et al. 

Nature Photonics. 2018-12-31. Vol. 13, p. 131-136. DOI : 10.1038/s41566-018-0325-y.

Air and Water-Stable n-Type Doping and Encapsulation of Flexible MoS2 Devices with SU8

Y-C. Kung; N. Hosseini; D. Dumcenco; G. E. Fantner; A. Kis 

Advanced Electronic Materials. 2018-11-09.  p. 1800492. DOI : 10.1002/aelm.201800492.

Intervalley Scattering of Interlayer Excitons in a MoS2/MoSe2/MoS2 Heterostructure in High Magnetic Field

A. Surrente; L. Klopotowski; N. Zhang; M. Baranowski; A. Mitioglu et al. 

NANO LETTERS. 2018. Vol. 18, num. 6, p. 3994-4000. DOI : 10.1021/acs.nanolett.8b01484.

Impact of photodoping on inter- and intralayer exciton emission in a MoS2/MoSe2/MoS2 heterostructure

N. Zhang; A. Surrente; M. Baranowski; D. Dumcenco; Y. Kung et al. 

Applied Physics Letters. 2018. Vol. 113, num. 6, p. 062107. DOI : 10.1063/1.5043098.

Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111)

M-W. Chen; H. Kim; C. Bernard; M. Pizzochero; J. Zaldı́var et al. 

ACS Nano. 2018-11-02. Vol. 12, num. 11, p. 11161–11168. DOI : 10.1021/acsnano.8b05628.

Room-temperature electrical control of exciton flux in a van der Waals heterostructure

D. Unuchek; A. Ciarrocchi; A. Avsar; K. Watanabe; T. Taniguchi et al. 

Nature. 2018-07-25. Vol. 560, num. 7718, p. 340-344. DOI : 10.1038/s41586-018-0357-y.

Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts

A. Avsar; K. Marinov; E. G. Marin; G. Iannaccone; K. Watanabe et al. 

Advanced Materials. 2018. Vol. 30, num. 18, p. 1707200. DOI : 10.1002/adma.201707200.

Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide

A. Ciarrocchi; A. Avsar; D. Ovchinnikov; A. Kis 

Nature Communications. 2018-03-02. Vol. 9, num. 1, p. 919. DOI : 10.1038/s41467-018-03436-0.

Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion

M-W. Chen; H. Kim; D. Ovchinnikov; A. Kuc; T. Heine et al. 

npj 2D Materials and Applications. 2018. Vol. 2, num. 1, p. 2. DOI : 10.1038/s41699-017-0047-x.


Journal Articles

Resolving the spin splitting in the conduction band of monolayer MoS2

K. Marinov; A. Avsar; K. Watanabe; T. Taniguchi; A. Kis 

Nature Communications. 2017. Vol. 8, num. 1, p. 1938. DOI : 10.1038/s41467-017-02047-5.

Probing the Interlayer Exciton Physics in a MoS2/MoSe2/MoS2 van der Waals Heterostructure

M. Baranowski; A. Surrente; L. Klopotowski; J. M. Urban; N. Zhang et al. 

Nano Letters. 2017. Vol. 17, num. 10, p. 6360-6365. DOI : 10.1021/acs.nanolett.7b03184.

Optospintronics in Graphene via Proximity Coupling

A. Avsar; D. Unuchek; J. Liu; O. L. Sanchez; K. Watanabe et al. 

ACS Nano. 2017. Vol. 11, num. 11, p. 11678–11686. DOI : 10.1021/acsnano.7b06800.

On current transients in MoS2 Field Effect Transistors

M. Macucci; G. Tambellini; D. Ovchinnikov; A. Kis; G. Iannaccone et al. 

Scientific Reports. 2017. Vol. 7, num. 1, p. 11575. DOI : 10.1038/s41598-017-11930-6.

Your new travel guide to the flatlands

A. Kis 

Npj 2D Materials And Applications. 2017. Vol. 1, p. 1. DOI : 10.1038/s41699-017-0006-6.

Field-induced charge separation dynamics in monolayer MoS2

D. Vella; D. Ovchinnikov; D. Viola; D. Dumcenco; Y. C. Kung et al. 

2D Materials. 2017. Vol. 4, num. 3, p. 035017. DOI : 10.1088/2053-1583/aa7ce0.

Suppressing Nucleation in Metal–Organic Chemical Vapor Deposition of MoS2

H. Kim; D. Ovchinnikov; D. Deiana; D. Unuchek; A. Kis 

Nano Letters. 2017. Vol. 17, num. 8, p. 5056–5063. DOI : 10.1021/acs.nanolett.7b02311.

Defect Healing and Charge Transfer-Mediated Valley Polarization in MoS2/MoSe2/MoS2 heterostructures

A. Surrente; D. Dumcenco; Z. Yang; A. Kuc; Y. Jing et al. 

Nano Letters. 2017. Vol. 17, num. 7, p. 4130–4136. DOI : 10.1021/acs.nanolett.7b00904.

Highly Oriented Atomically Thin Ambipolar MoSe2

M-W. Chen; D. Ovchinnikov; S. Lazar; M. Pizzochero; M. B. Whitwick et al. 

ACS Nano. 2017. Vol. 11, num. 6, p. 6355–6361. DOI : 10.1021/acsnano.7b02726.

High Throughput Characterization of Epitaxially Grown Single-Layer MoS2

F. Ghasemi; R. Frisenda; D. Dumcenco; A. Kis; D. Perez De Lara et al. 

Electronics. 2017. Vol. 6, num. 2, p. 28. DOI : 10.3390/electronics6020028.

Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials

R. Frisenda; Y. Niu; P. Gant; A. J. Molina-Mendoza; R. Schmidt et al. 

Journal Of Physics D-Applied Physics. 2017. Vol. 50, num. 7, p. 074002. DOI : 10.1088/1361-6463/aa5256.

Dark excitons and the elusive valley polarization in transition metal dichalcogenides

M. Baranowski; A. Surrente; D. K. Maude; M. Ballottin; A. A. Mitioglu et al. 

2D Materials. 2017. Vol. 4, num. 2, p. 025016. DOI : 10.1088/2053-1583/aa58a0.

Unconventional electroabsorption in monolayer MoS2

D. Vella; D. Ovchinnikov; N. Martino; V. Vega-Mayoral; D. Dumcenco et al. 

2D Materials. 2017. Vol. 4, num. 2, p. 021005. DOI : 10.1088/2053-1583/aa5784.


2D transition metal dichalcogenides

S. Manzeli; D. Ovchinnikov; D. Pasquier; O. V. Yazyev; A. Kis 

Nature Reviews Materials. 2017. Vol. 2, p. 17033. DOI : 10.1038/natrevmats.2017.33.


Journal Articles

THz time-domain spectroscopy and IR spectroscopy on MoS2

D. Arcos; D. Gabriel; D. Dumcenco; A. Kis; N. Ferrer-Anglada 

Physica Status Solidi B-Basic Solid State Physics. 2016. Vol. 253, num. 12, p. 2499-2504. DOI : 10.1002/pssb.201600281.

High Responsivity, Large-Area Graphene/MoS2 flexible photodetectors

D. De Fazio; I. Goykhman; D. Yoon; M. Bruna; A. Eiden et al. 

ACS Nano. 2016. Vol. 10, num. 9, p. 8252–8262. DOI : 10.1021/acsnano.6b05109.

Free-standing electronic character of monolayer

H. Kim; D. Dumcenco; M. Frégnaux; A. Benayad; M-W. Chen et al. 

Physical Review B. 2016. Vol. 94, num. 8, p. 081401. DOI : 10.1103/PhysRevB.94.081401.

Valley polarization by spin injection in a light-emitting van der Waals heterojunction

O. L. Sanchez; D. Ovchinnikov; S. Misra; A. Allain; A. Kis 

Nano Letters. 2016. Vol. 16, num. 9, p. 5792–5797. DOI : 10.1021/acs.nanolett.6b02527.

A robust molecular probe for Ångstrom-scale analytics in liquids

P. Nirmalraj; D. Thompson; C. Dimitrakopoulos; B. Gotsmann; D. Dumcenco et al. 

Nature Communications. 2016. Vol. 7, p. 12403. DOI : 10.1038/ncomms12403.

Disorder engineering and conductivity dome in ReS2 with electrolyte gating

D. Ovchinnikov; F. Gargiulo; A. Allain; D. J. Pasquier; D. Dumcenco et al. 

Nature Communications. 2016. Vol. 7, p. 12391. DOI : 10.1038/ncomms12391.

Single-layer MoS2 nanopores as nanopower generators

J. Feng; M. Graf; K. Liu; D. Ovchinnikov; D. Dumcenco et al. 

Nature. 2016. Vol. 536, p. 197-200. DOI : 10.1038/nature18593.

Magnetoexcitons in large area CVD-grown monolayer MoS2 and MoSe2 on sapphire

A. A. Mitioglu; K. Galkowski; A. Surrente; L. Klopotowski; D. Dumcenco et al. 

Physical Review B. 2016. Vol. 93, num. 16, p. 165412. DOI : 10.1103/PhysRevB.93.165412.

Observation of ionic Coulomb blockade in nanopores

J. Feng; K. Liu; M. Graf; D. Dumcenco; A. Kis et al. 

Nature Materials. 2016. Vol. 15, p. 850–855. DOI : 10.1038/nmat4607.

Vacuum ultraviolet excitation luminescence spectroscopy of few-layered MoS2

V. Pankratov; J. Hoszowska; -C. Dousse; M. Huttula; A. Kis et al. 

Journal Of Physics-Condensed Matter. 2016. Vol. 28, num. 1, p. 015301. DOI : 10.1088/0953-8984/28/1/015301.

Conference Papers

High-quality Synthetic 2D Transition Metal Dichalcogenide Semiconductors

D. Dumcenco; D. Ovchinnikov; K. Marinov; A. Kis 

2016. 46th European Solid-State Device Research Conference (ESSDERC) / 42nd European Solid-State Circuits Conference (ESSCIRC), Lausanne, SWITZERLAND, SEP 12-15, 2016. p. 284-286. DOI : 10.1109/ESSDERC.2016.7599641.


Journal Articles

Large-area MoS2 grown using H2S as the sulphur source

D. Dumcenco; D. Ovchinnikov; O. Lopez Sanchez; P. Gillet; D. T. L. Alexander et al. 

2D Materials. 2015. Vol. 2, num. 4, p. 044005. DOI : 10.1088/2053-1583/2/4/044005.

Electromechanical oscillations in bilayer graphene

M. M. Benameur; F. Gargiulo; S. Manzeli; G. Autès; M. Tosun et al. 

Nature Communications. 2015. Vol. 6, p. 8582. DOI : 10.1038/ncomms9582.

Identification of single nucleotides in MoS2 nanopores

J. Feng; K. Liu; R. D. Bulushev; S. Khlybov; D. Dumcenco et al. 

Nature Nanotechnology. 2015. Vol. 10, num. 12, p. 1070-1076. DOI : 10.1038/nnano.2015.219.

Electronic properties of transition-metal dichalcogenides

A. Kuc; T. Heine; A. Kis 

MRS Bulletin. 2015. Vol. 40, num. 07, p. 577-584. DOI : 10.1557/mrs.2015.143.

Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2

S. Manzeli; A. Allain; A. Ghadimi; A. Kis 

Nano Letters. 2015.  p. 150720132701006. DOI : 10.1021/acs.nanolett.5b01689.

Electrochemical Reaction in Single Layer MoS2: nanopores opened atom by atom

J. Feng; K. Liu; M. Graf; M. Lihter; R. D. Bulushev et al. 

Nano Letters. 2015.  p. 150504094212005. DOI : 10.1021/acs.nanolett.5b00768.

Optically active quantum dots in monolayer WSe2

A. Srivastava; M. Sidler; A. V. Allain; D. S. Lembke; A. Kis et al. 

Nature Nanotechnology. 2015. Vol. 10, p. 491-496. DOI : 10.1038/nnano.2015.60.

Large-Area Epitaxial Monolayer MoS2

D. Dumcenco; D. Ovchinnikov; K. Marinov; P. Lazić; M. Gibertini et al. 

ACS Nano. 2015. Vol. 9, p. 4611-4620. DOI : 10.1021/acsnano.5b01281.

Direct fabrication of thin layer MoS2 field-effect nanoscale transistors by oxidation scanning probe lithography

F. M. Espinosa; Y. K. Ryu; K. Marinov; D. Dumcenco; A. Kis et al. 

Applied Physics Letters. 2015. Vol. 106, num. 10, p. 103503. DOI : 10.1063/1.4914349.

Thickness-dependent mobility in two-dimensional MoS2

D. Lembke; A. Allain; A. Kis 

Nanoscale. 2015. Vol. 7, num. 14, p. 6255-6260. DOI : 10.1039/C4NR06331G.

Atomic Scale Microstructure and Properties of Se-Deficient Two-Dimensional MoSe2

O. Lehtinen; H-P. Komsa; A. Pulkin; M. B. Whitwick; M-W. Chen et al. 

ACS Nano. 2015. Vol. 9, num. 3, p. 3274-3283. DOI : 10.1021/acsnano.5b00410.

Valley Zeeman effect in elementary optical excitations of monolayer WSe2

A. Srivastava; M. Sidler; A. V. Allain; D. S. Lembke; A. Kis et al. 

Nature Physics. 2015. Vol. 11, p. 141–147. DOI : 10.1038/nphys3203.

Single-Layer MoS2 Electronics

D. Lembke; S. Bertolazzi; A. Kis 

Accounts of Chemical Research. 2015. Vol. 48, num. 1, p. 100-110. DOI : 10.1021/ar500274q.

Numerical correction of anti-symmetric aberrations in single HRTEM images of weakly scattering 2D-objects

O. Lehtinen; D. Geiger; Z. Lee; M. B. Whitwick; M-W. Chen et al. 

Ultramicroscopy. 2015. Vol. 151, p. 130-135. DOI : 10.1016/j.ultramic.2014.09.010.

Conference Papers

High-Frequency Scaled MoS2 Transistors

D. Krasnozhon; S. Dutta; C. B. Nyffeler; Y. Leblebici; A. Kis 

2015. International Electron Devices Meeting (IEDM 2015), Washington, DC, 7-9 December, 2015. DOI : 10.1109/IEDM.2015.7409781.


Electrical contacts to two-dimensional semiconductors

A. Allain; J. Kang; K. Banerjee; A. Kis 

Nature Materials. 2015. Vol. 14, num. 12, p. 1195-1205. DOI : 10.1038/nmat4452.

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

A. C. Ferrari; F. Bonaccorso; V. Fal’Ko; K. S. Novoselov; S. Roche et al. 

Nanoscale. 2015. Vol. 7, num. 11, p. 4598-4810. DOI : 10.1039/c4nr01600a.

MoS2 and semiconductors in the flatland

O. V. Yazyev; A. Kis 

Materials Today. 2015. Vol. 18, num. 1, p. 20-30. DOI : 10.1016/j.mattod.2014.07.005.


Journal Articles

MoS2 Transistors Operating at Gigahertz Frequencies

D. Krasnozhon; D. Lembke; C. Nyffeler; Y. Leblebici; A. Kis 

Nano Letters. 2014. Vol. 14, num. 10, p. 5905-5911. DOI : 10.1021/nl5028638.

Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?

W. Cao; J. Kang; S. Bertolazzi; A. Kis; K. Banerjee 

IEEE Transactions on Electron Devices. 2014. Vol. 61, num. 10, p. 3456-3464. DOI : 10.1109/TED.2014.2350483.