Publications

2019

Journal Articles

Self-sensing, tunable monolayer MoS2 nanoelectromechanical resonators

S. Manzeli; D. Dumcenco; G. Migliato Marega; A. Kis 

Nature Communications. 2019-10-23. Vol. 10, num. 1. DOI : 10.1038/s41467-019-12795-1.

Valley-polarized exciton currents in a van der Waals heterostructure

D. Unuchek; A. Ciarrocchi; A. Avsar; Z. Sun; K. Watanabe et al. 

Nature Nanotechnology. 2019-10-21. DOI : 10.1038/s41565-019-0559-y.

Light-Enhanced Blue Energy Generation Using MoS2 Nanopores

M. Graf; M. Lihter; D. Unuchek; A. Sarathy; J-P. Leburton et al. 

Joule. 2019-06-19. Vol. 3, num. 6, p. 1549-1564. DOI : 10.1016/j.joule.2019.04.011.

Defect induced, layer-modulated magnetism in ultrathin metallic PtSe2

A. Avsar; A. Ciarrocchi; M. Pizzochero; D. Unuchek; O. V. Yazyev et al. 

Nature Nanotechnology. 2019-06-17. DOI : 10.1038/s41565-019-0467-1.

MoS2 photodetectors integrated with photonic circuits

J. F. Gonzalez Marin; D. Unuchek; K. Watanabe; T. Taniguchi; A. Kis 

npj 2D Materials and Applications. 2019-03-29. Vol. 3, num. 1, p. 14. DOI : 10.1038/s41699-019-0096-4.

Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography

X. Zheng; A. Calò; E. Albisetti; X. Liu; A. S. M. Alharbi et al. 

Nature Electronics. 2019-01-16. Vol. 2, num. 1, p. 17-25. DOI : 10.1038/s41928-018-0191-0.

Non equilibrium anisotropic excitons in atomically thin ReS2

J. M. Urban; M. Baranowski; A. Kuc; L. Klopotowski; A. Surrente et al. 

2D Materials. 2019-01-01. Vol. 6, num. 1, p. 015012. DOI : 10.1088/2053-1583/aae9b9.

Conference Papers

Excitonic Effects in Single Layer MoS2 Probed by Broadband Two-dimensional Electronic Spectroscopy

M. Maiuri; S. Dal Conte; M. Russo; J. Wang; G. Soavi et al. 

2019-01-01. Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, May 05-10, 2019.

Reviews

Development of graphene-based ionizing radiation sensors

G. Batignani; S. Bettarini; G. Borghi; M. Boscardin; A. Ciarrocchi et al. 

Nuclear Instruments & Methods In Physics Research Section A-Accelerators Spectrometers Detectors And Associated Equipment. 2019-08-21. Vol. 936, p. 666-668. DOI : 10.1016/j.nima.2018.08.088.

2018

Journal Articles

Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures

A. Ciarrocchi; D. Unuchek; A. Avsar; K. Watanabe; T. Taniguchi et al. 

Nature Photonics. 2018-12-31. Vol. 13, p. 131-136. DOI : 10.1038/s41566-018-0325-y.

Air and Water-Stable n-Type Doping and Encapsulation of Flexible MoS2 Devices with SU8

Y-C. Kung; N. Hosseini; D. Dumcenco; G. E. Fantner; A. Kis 

Advanced Electronic Materials. 2018-11-09.  p. 1800492. DOI : 10.1002/aelm.201800492.

Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111)

M-W. Chen; H. Kim; C. Bernard; M. Pizzochero; J. Zaldı́var et al. 

ACS Nano. 2018-11-02. DOI : 10.1021/acsnano.8b05628.

Room-temperature electrical control of exciton flux in a van der Waals heterostructure

D. Unuchek; A. Ciarrocchi; A. Avsar; K. Watanabe; T. Taniguchi et al. 

Nature. 2018-07-25. Vol. 560, num. 7718, p. 340-+. DOI : 10.1038/s41586-018-0357-y.

Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide

A. Ciarrocchi; A. Avsar; D. Ovchinnikov; A. Kis 

Nature Communications. 2018-03-02. Vol. 9, num. 1. DOI : 10.1038/s41467-018-03436-0.

Intervalley Scattering of Interlayer Excitons in a MoS2/MoSe2/MoS2 Heterostructure in High Magnetic Field

A. Surrente; L. Klopotowski; N. Zhang; M. Baranowski; A. Mitioglu et al. 

NANO LETTERS. 2018. Vol. 18, num. 6, p. 3994-4000. DOI : 10.1021/acs.nanolett.8b01484.

Impact of photodoping on inter- and intralayer exciton emission in a MoS2/MoSe2/MoS2 heterostructure

N. Zhang; A. Surrente; M. Baranowski; D. Dumcenco; Y. Kung et al. 

Applied Physics Letters. 2018. Vol. 113, num. 6. DOI : 10.1063/1.5043098.

Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts

A. Avsar; K. Marinov; E. G. Marin; G. Iannaccone; K. Watanabe et al. 

Advanced Materials. 2018. Vol. 30, num. 18, p. 1707200. DOI : 10.1002/adma.201707200.

Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion

M-W. Chen; H. Kim; D. Ovchinnikov; A. Kuc; T. Heine et al. 

npj 2D Materials and Applications. 2018. Vol. 2, num. 1. DOI : 10.1038/s41699-017-0047-x.

2017

Journal Articles

Resolving the spin splitting in the conduction band of monolayer MoS2

K. Marinov; A. Avsar; K. Watanabe; T. Taniguchi; A. Kis 

Nature Communications. 2017. Vol. 8, num. 1. DOI : 10.1038/s41467-017-02047-5.

Probing the Interlayer Exciton Physics in a MoS2/MoSe2/MoS2 van der Waals Heterostructure

M. Baranowski; A. Surrente; L. Klopotowski; J. M. Urban; N. Zhang et al. 

Nano Letters. 2017. Vol. 17, num. 10, p. 6360-6365. DOI : 10.1021/acs.nanolett.7b03184.

Optospintronics in Graphene via Proximity Coupling

A. Avsar; D. Unuchek; J. Liu; O. L. Sanchez; K. Watanabe et al. 

ACS Nano. 2017. DOI : 10.1021/acsnano.7b06800.

On current transients in MoS2 Field Effect Transistors

M. Macucci; G. Tambellini; D. Ovchinnikov; A. Kis; G. Iannaccone et al. 

Scientific Reports. 2017. Vol. 7, num. 1. DOI : 10.1038/s41598-017-11930-6.

Your new travel guide to the flatlands

A. Kis 

Npj 2D Materials And Applications. 2017. Vol. 1. DOI : 10.1038/s41699-017-0006-6.

Field-induced charge separation dynamics in monolayer MoS2

D. Vella; D. Ovchinnikov; D. Viola; D. Dumcenco; Y. C. Kung et al. 

2D Materials. 2017. Vol. 4, num. 3, p. 035017. DOI : 10.1088/2053-1583/aa7ce0.

Suppressing Nucleation in Metal–Organic Chemical Vapor Deposition of MoS2

H. Kim; D. Ovchinnikov; D. Deiana; D. Unuchek; A. Kis 

Nano Letters. 2017. DOI : 10.1021/acs.nanolett.7b02311.

Defect Healing and Charge Transfer-Mediated Valley Polarization in MoS2/MoSe2/MoS2 heterostructures

A. Surrente; D. Dumcenco; Z. Yang; A. Kuc; Y. Jing et al. 

Nano Letters. 2017. DOI : 10.1021/acs.nanolett.7b00904.

Highly Oriented Atomically Thin Ambipolar MoSe2

M-W. Chen; D. Ovchinnikov; S. Lazar; M. Pizzochero; M. B. Whitwick et al. 

ACS Nano. 2017. DOI : 10.1021/acsnano.7b02726.

High Throughput Characterization of Epitaxially Grown Single-Layer MoS2

F. Ghasemi; R. Frisenda; D. Dumcenco; A. Kis; D. Perez De Lara et al. 

Electronics. 2017. Vol. 6, num. 2, p. 28. DOI : 10.3390/electronics6020028.

Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials

R. Frisenda; Y. Niu; P. Gant; A. J. Molina-Mendoza; R. Schmidt et al. 

Journal Of Physics D-Applied Physics. 2017. Vol. 50, num. 7, p. 074002. DOI : 10.1088/1361-6463/aa5256.

Dark excitons and the elusive valley polarization in transition metal dichalcogenides

M. Baranowski; A. Surrente; D. K. Maude; M. Ballottin; A. A. Mitioglu et al. 

2D Materials. 2017. Vol. 4, num. 2, p. 025016. DOI : 10.1088/2053-1583/aa58a0.

Unconventional electroabsorption in monolayer MoS2

D. Vella; D. Ovchinnikov; N. Martino; V. Vega-Mayoral; D. Dumcenco et al. 

2D Materials. 2017. Vol. 4, num. 2, p. 021005. DOI : 10.1088/2053-1583/aa5784.

Reviews

2D transition metal dichalcogenides

S. Manzeli; D. Ovchinnikov; D. Pasquier; O. V. Yazyev; A. Kis 

Nature Reviews Materials. 2017. Vol. 2, p. 17033. DOI : 10.1038/natrevmats.2017.33.

2016

Journal Articles

THz time-domain spectroscopy and IR spectroscopy on MoS2

D. Arcos; D. Gabriel; D. Dumcenco; A. Kis; N. Ferrer-Anglada 

Physica Status Solidi B-Basic Solid State Physics. 2016. Vol. 253, num. 12, p. 2499-2504. DOI : 10.1002/pssb.201600281.

High Responsivity, Large-Area Graphene/MoS2 flexible photodetectors

D. De Fazio; I. Goykhman; D. Yoon; M. Bruna; A. Eiden et al. 

ACS Nano. 2016. DOI : 10.1021/acsnano.6b05109.

Free-standing electronic character of monolayer

H. Kim; D. Dumcenco; M. Frégnaux; A. Benayad; M-W. Chen et al. 

Physical Review B. 2016. Vol. 94, num. 8, p. 081401. DOI : 10.1103/PhysRevB.94.081401.

Valley polarization by spin injection in a light-emitting van der Waals heterojunction

O. L. Sanchez; D. Ovchinnikov; S. Misra; A. Allain; A. Kis 

Nano Letters. 2016. DOI : 10.1021/acs.nanolett.6b02527.

A robust molecular probe for Ångstrom-scale analytics in liquids

P. Nirmalraj; D. Thompson; C. Dimitrakopoulos; B. Gotsmann; D. Dumcenco et al. 

Nature Communications. 2016. Vol. 7, p. 12403. DOI : 10.1038/ncomms12403.

Disorder engineering and conductivity dome in ReS2 with electrolyte gating

D. Ovchinnikov; F. Gargiulo; A. Allain; D. J. Pasquier; D. Dumcenco et al. 

Nature Communications. 2016. Vol. 7, p. 12391. DOI : 10.1038/ncomms12391.

Single-layer MoS2 nanopores as nanopower generators

J. Feng; M. Graf; K. Liu; D. Ovchinnikov; D. Dumcenco et al. 

Nature. 2016. Vol. 536, p. 197-200. DOI : 10.1038/nature18593.

Magnetoexcitons in large area CVD-grown monolayer MoS2 and MoSe2 on sapphire

A. A. Mitioglu; K. Galkowski; A. Surrente; L. Klopotowski; D. Dumcenco et al. 

Physical Review B. 2016. Vol. 93, num. 16, p. 165412. DOI : 10.1103/PhysRevB.93.165412.

Observation of ionic Coulomb blockade in nanopores

J. Feng; K. Liu; M. Graf; D. Dumcenco; A. Kis et al. 

Nature Materials. 2016. DOI : 10.1038/nmat4607.

Vacuum ultraviolet excitation luminescence spectroscopy of few-layered MoS2

V. Pankratov; J. Hoszowska; -C. Dousse; M. Huttula; A. Kis et al. 

Journal Of Physics-Condensed Matter. 2016. Vol. 28, num. 1, p. 015301. DOI : 10.1088/0953-8984/28/1/015301.

Conference Papers

High-quality Synthetic 2D Transition Metal Dichalcogenide Semiconductors

D. Dumcenco; D. Ovchinnikov; K. Marinov; A. Kis 

2016. 46th European Solid-State Device Research Conference (ESSDERC) / 42nd European Solid-State Circuits Conference (ESSCIRC), Lausanne, SWITZERLAND, SEP 12-15, 2016. p. 284-286. DOI : 10.1109/ESSDERC.2016.7599641.

2015

Journal Articles

Large-area MoS2 grown using H2S as the sulphur source

D. Dumcenco; D. Ovchinnikov; O. Lopez Sanchez; P. Gillet; D. T. L. Alexander et al. 

2D Materials. 2015. Vol. 2, num. 4, p. 044005. DOI : 10.1088/2053-1583/2/4/044005.

Electromechanical oscillations in bilayer graphene

M. M. Benameur; F. Gargiulo; S. Manzeli; G. Autès; M. Tosun et al. 

Nature Communications. 2015. Vol. 6, p. 8582. DOI : 10.1038/ncomms9582.

Identification of single nucleotides in MoS2 nanopores

J. Feng; K. Liu; R. D. Bulushev; S. Khlybov; D. Dumcenco et al. 

Nature Nanotechnology. 2015. Vol. 10, num. 12, p. 1070-+. DOI : 10.1038/nnano.2015.219.

Electronic properties of transition-metal dichalcogenides

A. Kuc; T. Heine; A. Kis 

MRS Bulletin. 2015. Vol. 40, num. 07, p. 577-584. DOI : 10.1557/mrs.2015.143.

Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2

S. Manzeli; A. Allain; A. Ghadimi; A. Kis 

Nano Letters. 2015.  p. 150720132701006. DOI : 10.1021/acs.nanolett.5b01689.

Electrochemical Reaction in Single Layer MoS2: nanopores opened atom by atom

J. Feng; K. Liu; M. Graf; M. Lihter; R. D. Bulushev et al. 

Nano Letters. 2015.  p. 150504094212005. DOI : 10.1021/acs.nanolett.5b00768.

Optically active quantum dots in monolayer WSe2

A. Srivastava; M. Sidler; A. V. Allain; D. S. Lembke; A. Kis et al. 

Nature Nanotechnology. 2015. Vol. 10, p. 491-496. DOI : 10.1038/nnano.2015.60.

Large-Area Epitaxial Monolayer MoS2

D. Dumcenco; D. Ovchinnikov; K. Marinov; P. Lazić; M. Gibertini et al. 

ACS Nano. 2015. Vol. 9, p. 4611-4620. DOI : 10.1021/acsnano.5b01281.

Direct fabrication of thin layer MoS2 field-effect nanoscale transistors by oxidation scanning probe lithography

F. M. Espinosa; Y. K. Ryu; K. Marinov; D. Dumcenco; A. Kis et al. 

Applied Physics Letters. 2015. Vol. 106, num. 10, p. 103503. DOI : 10.1063/1.4914349.

Thickness-dependent mobility in two-dimensional MoS2

D. Lembke; A. Allain; A. Kis 

Nanoscale. 2015. DOI : 10.1039/C4NR06331G.

Atomic Scale Microstructure and Properties of Se-Deficient Two-Dimensional MoSe2

O. Lehtinen; H-P. Komsa; A. Pulkin; M. B. Whitwick; M-W. Chen et al. 

ACS Nano. 2015. Vol. 9, num. 3, p. 3274-3283. DOI : 10.1021/acsnano.5b00410.

Valley Zeeman effect in elementary optical excitations of monolayer WSe2

A. Srivastava; M. Sidler; A. V. Allain; D. S. Lembke; A. Kis et al. 

Nature Physics. 2015. DOI : 10.1038/nphys3203.

Single-Layer MoS2 Electronics

D. Lembke; S. Bertolazzi; A. Kis 

Accounts of Chemical Research. 2015. Vol. 48, num. 1, p. 100-110. DOI : 10.1021/ar500274q.

Numerical correction of anti-symmetric aberrations in single HRTEM images of weakly scattering 2D-objects

O. Lehtinen; D. Geiger; Z. Lee; M. B. Whitwick; M-W. Chen et al. 

Ultramicroscopy. 2015. Vol. 151, p. 130-135. DOI : 10.1016/j.ultramic.2014.09.010.

Conference Papers

High-Frequency Scaled MoS2 Transistors

D. Krasnozhon; S. Dutta; C. B. Nyffeler; Y. Leblebici; A. Kis 

2015. International Electron Devices Meeting (IEDM 2015), Washington, DC, 7-9 December, 2015. DOI : 10.1109/IEDM.2015.7409781.

Reviews

Electrical contacts to two-dimensional semiconductors

A. Allain; J. Kang; K. Banerjee; A. Kis 

Nature Materials. 2015. Vol. 14, num. 12, p. 1195-1205. DOI : 10.1038/nmat4452.

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

A. C. Ferrari; F. Bonaccorso; V. Fal’Ko; K. S. Novoselov; S. Roche et al. 

Nanoscale. 2015. Vol. 7, num. 11, p. 4598-4810. DOI : 10.1039/c4nr01600a.

MoS2 and semiconductors in the flatland

O. V. Yazyev; A. Kis 

Materials Today. 2015. Vol. 18, num. 1, p. 20-30. DOI : 10.1016/j.mattod.2014.07.005.

2014

Journal Articles

MoS2 Transistors Operating at Gigahertz Frequencies

D. Krasnozhon; D. Lembke; C. Nyffeler; Y. Leblebici; A. Kis 

Nano Letters. 2014. Vol. 14, num. 10, p. 5905-5911. DOI : 10.1021/nl5028638.

Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?

W. Cao; J. Kang; S. Bertolazzi; A. Kis; K. Banerjee 

IEEE Transactions on Electron Devices. 2014. Vol. 61, num. 10, p. 3456-3464. DOI : 10.1109/TED.2014.2350483.

Electrical Transport Properties of Single-Layer WS2

D. Ovchinnikov; A. Allain; Y-S. Huang; D. Dumcenco; A. Kis 

ACS Nano. 2014.  p. 140728153134003. DOI : 10.1021/nn502362b.

Electron and Hole Mobilities in Single-Layer WSe2

A. Allain; A. Kis 

ACS Nano. 2014.  p. doi:10.1021/nn5021538. DOI : 10.1021/nn5021538.

Atomically Thin Molybdenum Disulfide Nanopores with High Sensitivity for DNA Translocation

K. Liu; J. Feng; A. Kis; A. Radenovic 

ACS Nano. 2014. Vol. 8, p. 2504-2511. DOI : 10.1021/nn406102h.

Light Generation and Harvesting in a van der Waals Heterostructure

O. Lopez-Sanchez; E. Alarcon Llado; V. Koman; A. Fontcuberta I. Morral; A. Radenovic et al. 

ACS Nano. 2014. Vol. 8, p. 3042-3048. DOI : 10.1021/nn500480u.

Thermal Conductivity of Monolayer Molybdenum Disulfide Obtained from Temperature-Dependent Raman Spectroscopy

R. Yan; J. R. Simpson; S. Bertolazzi; J. Brivio; M. Watson et al. 

ACS Nano. 2014. Vol. 8, num. 1, p. 986-993. DOI : 10.1021/nn405826k.

2013

Journal Articles

Detecting the translocation of DNA through a nanopore using graphene nanoribbons

F. Traversi; C. Raillon; S. M. Benameur; K. Liu; S. Khlybov et al. 

Nature Nanotechnology. 2013. Vol. 8, num. 12, p. 939-945. DOI : 10.1038/Nnano.2013.240.

Mobility engineering and a metal–insulator transition in monolayer MoS2

B. Radisavljevic; A. Kis 

Nature Materials. 2013. DOI : 10.1038/nmat3687.

Nonvolatile Memory Cells Based on MoS2/graphene heterostructures

S. Bertolazzi; D. Krasnozhon; A. Kis 

ACS Nano. 2013. Vol. 7, p. 3246-3252. DOI : 10.1021/nn3059136.

Ultrasensitive photodetectors based on monolayer MoS2

O. Lopez-Sanchez; D. Lembke; M. Kayci; A. Radenovic; A. Kis 

Nature Nanotechnology. 2013. Vol. 8, num. 7, p. 497-501. DOI : 10.1038/nnano.2013.100.

Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2

H. Shi; R. Yan; S. Bertolazzi; J. Brivio; B. Gao et al. 

ACS Nano. 2013. Vol. 7, num. 2, p. 1072-1080. DOI : 10.1021/nn303973r.

2012

Journal Articles

Ultrathin MoS2 membranes and their characterization through HRTEM and electron diffraction studies

J. Brivio; A. Kis; D. Alexander 

Microscopy and Microanalysis. 2012. Vol. 18, num. S2, p. 1582-1583. DOI : 10.1017/S1431927612009762.

Breakdown of High-Performance Monolayer MoS2

D. Lembke; A. Kis 

ACS Nano. 2012.  p. 121005131244003. DOI : 10.1021/nn303772b.

Small-signal amplifier based on single-layer MoS2

B. Radisavljevic; M. B. Whitwick; A. Kis 

Applied Physics Letters. 2012. Vol. 101, num. 4, p. 043103. DOI : 10.1063/1.4738986.

Long-term retention in organic ferroelectric-graphene memories

S. Raghavan; I. Stolichnov; N. Setter; J-S. Heron; M. Tosun et al. 

Applied Physics Letters. 2012. Vol. 100, num. 2, p. 023507. DOI : 10.1063/1.3676055.

Conference Papers

Micro-fabrication process for small transport devices of layered manganite

A. Alahgholipour Omrani; G. Deng; A. Radenovic; A. Kis; H. Rønnow 

2012. THE 56TH ANNUAL CONFERENCE ON MAGNETISM AND MAGNETIC MATERIALS, Phoenix, Arizona, USA, October, 30- November 3, 2011. DOI : 10.1063/1.3675995.

Reviews

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Q. H. Wang; K. Kalantar-Zadeh; A. Kis; J. N. Coleman; M. S. Strano 

Nature Nanotechnology. 2012. Vol. 7, num. 11, p. 699-712. DOI : 10.1038/nnano.2012.193.

Patents

Semiconductor device

A. Kis; B. Radisavljevic 

US9608101; US2014197459; EP2661775; WO2012093360.

2012.

2011

Journal Articles

Stretching and Breaking of Ultrathin MoS2

S. Bertolazzi; J. Brivio; A. Kis 

ACS Nano. 2011. Vol. 5, num. 12, p. 9703-9709. DOI : 10.1021/nn203879f.

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

B. Radisavljevic; M. B. Whitwick; A. Kis 

ACS Nano. 2011. Vol. 5, p. 9934-9938. DOI : 10.1021/nn203715c.

Ripples and Layers in Ultrathin MoS2 Membranes

J. Brivio; D. Alexander; A. Kis 

Nano Letters. 2011. Vol. 11, p. 5148-5153. DOI : 10.1021/nl2022288.

Single-layer MoS2 transistors

B. Radisavljevic; A. Radenovic; J. Brivio; V. Giacometti; A. Kis 

Nature Nanotechnology. 2011. Vol. 6, p. 147. DOI : 10.1038/nnano.2010.279.

Visibility of dichalcogenide nanolayers

M. M. Benameur; B. Radisavljevic; J. S. Héron; S. Sahoo; H. Berger et al. 

Nanotechnology. 2011. Vol. 22, num. 12, p. 125706. DOI : 10.1088/0957-4484/22/12/125706.

2010

Journal Articles

ssDNA Binding Reveals the Atomic Structure of Graphene

B. S. Husale; S. Sahoo; A. Radenovic; F. Traversi; P. Annibale et al. 

Langmuir. 2010. Vol. 26, num. 23, p. 18078-18082. DOI : 10.1021/la102518t.

Beta amyloid and hyperphosphorylated tau deposits in the pancreas in type 2 diabetes

J. Miklossy; H. Qing; A. Radenovic; A. Kis; B. Villeno et al. 

Neurobiology of Aging. 2010. Vol. 31, num. 9, p. 1503-1515. DOI : 10.1016/j.neurobiolaging.2008.08.019.

2009

Journal Articles

Mechanical and electronic properties of vanadium oxide nanotubes

B. Sipos; M. Duchamp; A. Magrez; L. Forró; N. BarišIć et al. 

Journal of Applied Physics. 2009. Vol. 105, num. 7, p. 074317. DOI : 10.1063/1.3103280.

2008

Journal Articles

Nanomechanics of carbon nanotubes

A. Kis; A. Zettl 

Philosophical Transactions Of The Royal Society A-Mathematical Physical And Engineering Sciences. 2008. Vol. 366, p. 1591-1611. DOI : 10.1098/rsta.2007.2174.

Temperature-Dependent Elasticity of Microtubules

A. Kis; S. Kasas; A. J. Kulik; S. Catsicas; L. Forró 

Langmuir. 2008. Vol. 24, num. 12, p. 6176-6181. DOI : 10.1021/la800438q.

2007

Journal Articles

A cell nanoinjector based on carbon nanotubes

X. Chen; A. Kis; A. Zettl; C. R. Bertozzi 

Proceedings of the National Academy of Sciences. 2007. Vol. 104, num. 20, p. 8218-8222. DOI : 10.1073/pnas.0700567104.

Buckling and kinking force measurements on individual multiwalled carbon nanotubes

K. Jensen; W. Mickelson; A. Kis; A. Zettl 

Physical Review B. 2007. Vol. 76, num. 19. DOI : 10.1103/PhysRevB.76.195436.

Nanomechanical investigation of $Mo_6S_{9-x}I_x$ nanowire bundles

A. Kis; G. Csanyi; D. Vrbanic; A. Mrzel; D. Mihailovic et al. 

Small. 2007. Vol. 3, num. 9, p. 1544-1548. DOI : 10.1002/smll.200700164.

Book Chapters

Mechanical Properties of Carbon Nanotubes

A. J. Kulik; A. Kis; B. Lukic; K. Lee; L. Forró 

Fundamentals of Friction and Wear on the Nanoscale; Springer, 2007. p. 583-601.

2006

Journal Articles

Interlayer Forces and Ultralow Sliding Friction in Multiwalled Carbon Nanotubes

A. Kis; K. Jensen; S. Aloni; W. Mickelson; A. Zettl 

Physical Review Letters. 2006. Vol. 97, num. 2. DOI : 10.1103/PhysRevLett.97.025501.

Shrinking a Carbon Nanotube

T. D. Yuzvinsky; W. Mickelson; S. Aloni; G. E. Begtrup; A. Kis et al. 

Nano Letters. 2006. Vol. 6, num. 12, p. 2718-2722. DOI : 10.1021/nl061671j.

Beta-amyloid deposition and Alzheimer’s type changes induced by Borrelia spirochetes

J. Miklossy; A. Kis; A. Radenovic; L. Miller; L. Forro et al. 

Neurobiology of Aging. 2006. Vol. 27, num. 2, p. 228-236. DOI : 10.1016/j.neurobiolaging.2005.01.018.

Book Chapters

Nanoscale mechanical properties – measuring techniques and applications

A. J. Kulik; A. Kis; G. Gremaud; S. Hengsberger; P. Zysset et al. 

Springer Handbook of nanotechnology; Springer, 2006. p. 661-682.

2005

Journal Articles

Controlled placement of highly aligned carbon nanotubes for the manufacture of arrays of nanoscale torsional actuators

T. D. Yuzvinsky; A. M. Fennimore; A. Kis; A. Zettl 

Nanotechnology. 2005. Vol. 17, num. 2, p. 434-438. DOI : 10.1088/0957-4484/17/2/015.

Imaging the life story of nanotube devices

T. D. Yuzvinsky; W. Mickelson; S. Aloni; S. L. Konsek; A. M. Fennimore et al. 

Applied Physics Letters. 2005. Vol. 87, num. 8, p. 083103. DOI : 10.1063/1.2012529.