1999-2001 ‒ Nanolab ‐ EPFL

Conference Papers:

S. Ecoffey, D. Bouvet, A. M. Ionescu, P. Fazan, “LPCVD deposition techniques for nanograin sub-10nm polysilicon ultra-thin films”, MRS Fall Meeting 2001, Boston, MA, USA, MRS Proceedings, Volume: 686, 2001.
P. Dainesi, L. Thevenaz, Ph. Fluckiger, C. Hibert, G. Racine, Ph. Robert, Ph. Renaud, A.M. Ionescu, M. Declercq, ”A novel CMOS SOI unbalanced Mach-Zehnder interferometer: from design and simulations to fabrication and characterization”, International IEEE SOI Conference 2001, USA, pp. 137 -138, October 2001.
A. M. Ionescu, “MEMS for reconfigurable wide-band RF ICs”, Proceedings of SBMICRO 2001, Pirenopolis, Brazil, September 2001. (invited)
C. Anghel, N. Hefyene, A. M. Ionescu, M. Vermandel, B. Bakeroot, J. Doutreloigne, R. Gillon, S. Frere, C. Maier, Y. Mourier, “Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage”, Proceedings of the 31 European Solid-State device Research Conference, ESSDERC 2001, Nuremberg, Germany, September 2001.
N. Hefyene, C. Anghel, A.M. Ionescu, S. Frere, R. Gillon, M. Vermandel, B. Bakeroot, J. Doutreloigne, “An experimental approach for bias-dependent drain series resistances evaluation in asymmetric HV MOSFETs”, Proceedings of the 31 European Solid-State device Research Conference, ESSDERC 2001, Nuremberg, Germany, September 2001.
V. Pott, A. M. Ionescu, R. Fritschi, C. Hibert, Ph. Fluckiger, G.A. Racine, M. Declercq, Ph. Renaud, A. Rusu, D. Dobrescu, L. Dobrescu, ”The suspended-gate MOSFET (SG-MOSFET): a modeling outlook for the design of RF MEMS switches and tunable capacitors”, Proceedings of IEEE International Annual Semiconductor Conference, CAS 2001, Sinaia, Romania, Volume: 1, pp. 137-140, October 2001.
C. Anghel, N. Hefyene, A. M. Ionescu, M. Vermandel, B. Bakeroot, J. Doutreloigne, R. Gillon, S. Frere, C. Maier, Y. Mourier, “Physical modelling strategy for (quasi-) saturation effects in lateral dmos transistor based on the concept of intrinsic drain voltage”, Proceedings of IEEE International Annual Semiconductor Conference, CAS 2001, Sinaia, Romania, Volume: 2, pp. 417 –420, October 2001.
L. Dobrescu, M. Brezeanu, A. Rusu, A. M. Ionescu, “On the limit between subthreshold and strong inversion regions in the EKV model using the nonlinear electrical conduction theorem”, Proceedings of IEEE International Annual Semiconductor Conference, CAS 2001, Volume: 2, pp. 421 –424, October 2001.
A. M. Ionescu, J.W. Tringe, A. Chovet, J. Plummer, “On a Novel Technique for the Electrical Characterization of Polycrystalline Silicon”, Proceedings of the 30 European Solid-State Device Research Conference, ESSDERC 2000, pp. 420-423, Cork Ireland, 11-13 September 2000.
C. Anghel, N. Hefyene, A. M. Ionescu, M. Declercq, J.W. Tringe, J.D. Plummer, “Pseudo-MOS Operation of Ultra-Narrow Polycrystalline Silicon Wires : Electrical Characterization and Memory Effects”, Proc. MRS Fall Meeting, Symposium F, MRS 2000, Boston, MA, Nov 27-Dec 2001.
L. Michelutti, J. M. Terrot, A. Chovet, A. Ionescu, “1/f Noise in Polycrystalline Silicon Thin Films Versus Technological Parameters”, IEEE 15th Intern. Conference on Noise in Physical Systems and 1/f Fluctuations, ICNF 1999, pp.122-124, Hong Kong, 23-26 August 1999.

Journal Papers: