Recent Publication List (2015-2017)

2019

Journal Articles

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

A. Saeidi; F. Jazaeri; I. Stolichnov; C. C. Enz; A. M. Ionescu 

Scientific Reports. 2019-06-24. Vol. 9, p. 9105. DOI : 10.1038/s41598-019-45628-8.

Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering

T. Mittmann; M. Materano; P. D. Lomenzo; M. H. Park; I. Stolichnov et al. 

Advanced Materials Interfaces. 2019-06-01. Vol. 6, num. 11, p. 1900042. DOI : 10.1002/admi.201900042.

Towards X-ray transient grating spectroscopy

C. Svetina; R. Mankowsky; G. Knopp; F. Koch; G. Seniutinas et al. 

Optics Letters. 2019-02-01. Vol. 44, num. 3, p. 574-577. DOI : 10.1364/OL.44.000574.

Conference Papers

A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO2) Phase Change Switches

A. Müller; R. Abdul Khadar; E. A. Casu; A. Krammer; M. Cavaleri et al. 

2019-05-07. 2019 IEEE MTT-S International Microwave Symposium (IMS), Boston, June 7-11,2019. p. 865-867. DOI : 10.1109/MWSYM.2019.8701121.

2018

Journal Articles

A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition

E. A. Casu; A. A. Muller; M. Cavalieri; A. Fumarola; A. M. Ionescu et al. 

Ieee Microwave And Wireless Components Letters. 2018-09-01. Vol. 28, num. 9, p. 795-797. DOI : 10.1109/LMWC.2018.2854961.

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

A. Saeidi; F. Jazaeri; I. Stolichnov; G. V. Luong; Q-T. Zhao et al. 

Nanotechnology. 2018-01-26. Vol. 29, num. 9, p. 095202. DOI : 10.1088/1361-6528/aaa590.

Two-Dimensional Materials Negative capacitance gives a positive boost

A. Ionescu 

Nature Nanotechnology. 2018. Vol. 13, num. 1, p. 7-8. DOI : 10.1038/s41565-017-0046-2.

Special Section Proposal Tunable Devices for Modern Communications: Materials, Integration, Modeling, and Applications

A. Muller; R. Ziolkowski; J. Kim; E. Blokhina; M. Dragoman et al. 

IEEE ACCESS. 2018. Vol. 6, p. 42368-42372. DOI : 10.1109/ACCESS.2018.2855259.

Magnetoplasmonic enhancement of Faraday rotation in patterned graphene metasurfaces

M. Tamagnone; T. Slipchenko; C. Moldovan; P. Liu; A. Centeno et al. 

Physical Review B. 2018. Vol. 97, num. 24. DOI : 10.1103/PhysRevB.97.241410.

III-V heterostructure tunnel field-effect transistor

C. Convertino; C. Zota; H. Schmid; A. Ionescu; K. Moselund 

JOURNAL OF PHYSICS-CONDENSED MATTER. 2018. Vol. 30, num. 26. DOI : 10.1088/1361-648X/aac5b4.

Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor

J. Padilla; C. Medina-Bailon; C. Alper; F. Gamiz; A. Ionescu 

Applied Physics Letters. 2018. Vol. 112, num. 18. DOI : 10.1063/1.5012948.

Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities

J. Padilla; C. Medina-Bailon; C. Navarro; C. Alper; F. Gamiz et al. 

IEEE TRANSACTIONS ON ELECTRON DEVICES. 2018. Vol. 65, num. 1, p. 339-346. DOI : 10.1109/TED.2017.2777666.

A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET

C. Alper; J. Padilla; P. Palestri; A. Ionescu 

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2018. Vol. 6, num. 1, p. 2-7. DOI : 10.1109/JEDS.2017.2758018.

Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW

E. A. Casu; A. A. Muller; M. Fernandez-Bolanos; A. Fumarola; A. Krammer et al. 

IEEE Access. 2018. Vol. 6, p. 12206-12212. DOI : 10.1109/ACCESS.2018.2795463.

Tunable RF phase shifters based on Vanadium Dioxide metal insulator transition

E. A. Casu; N. Oliva; M. Cavalieri; A. Muller; A. Fumarola et al. 

IEEE Journal of the Electron Devices Society. 2018.  p. 1-1. DOI : 10.1109/JEDS.2018.2837869.

Conference Papers

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

A. Saeidi; F. Jazaeri; I. Stlichnov; C. Enz; M. A. Ionescu 

2018-03-13. 

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

N. Oliva; E. A. Casu; C. Yan; A. Krammer; A. Magrez et al. 

2018-01-25. IEDM, San Francisco, California, USA, December 2-6, 2017. DOI : 10.1109/IEDM.2017.8268503.

Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications

A. Aziz; E. Breyer; A. Chen; X. Chen; S. Datta et al. 

2018. Proceedings Of The 2018 Design, Automation & Test In Europe Conference & Exhibition (Date), Dresden, GERMANY, Mar 19-23, 2018. p. 1289-1298. DOI : 10.23919/DATE.2018.8342213.

Embedded Passive Nano-Liter Micropump For Sweat Collection And Analysis

E. A. Garcia Cordero; F. Wildhaber; F. Bellando; J. F. Longo; M. Fernandez-Bolanos Badia et al. 

2018. 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Belfast, NORTH IRELAND, Jan 21-25, 2018. p. 1217-1220.

2017

Journal Articles

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

N. Oliva; E. A. Casu; C. Yan; A. Krammer; T. Rosca et al. 

Scientific Reports. 2017. Vol. 7, num. 1, p. 14250. DOI : 10.1038/s41598-017-12950-y.

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

A. Saeidi; F. Jazaeri; F. Bellando; I. Stolichnov; G. V. Luong et al. 

IEEE Electron Device Letters. 2017. Vol. 38, num. 10, p. 1485-1488. DOI : 10.1109/LED.2017.2734943.

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

W. A. Vitale; E. A. Casu; A. Biswas; T. Rosca; C. Alper et al. 

Scientific Reports. 2017. Vol. 7, num. 1. DOI : 10.1038/s41598-017-00359-6.

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

A. Biswas; G. V. Luong; M. F. Chowdhury; C. Alper; Q-T. Zhao et al. 

IEEE Transactions on Electron Devices. 2017.  p. 1-8. DOI : 10.1109/TED.2017.2665527.

Conference Papers

Lab On Skin: 3D Monolitically Integrated Zero-Energy Micro/Nanofluidics and FD SOI Ion Sensitive FETs for Wearable Multi-Sensing Sweat Applications

F. Bellando; E. A. Garcia Cordero; F. Wildhaber; J. F. Longo; H. M. Guérin et al. 

2017. 63rd International Electron Device Meeting, San Francisco, California, USA,

Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators.

M. M. Lopez; E. A. Casu; A. M. Ionescu; M. Fernandez-Bolanos 

2017. 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium ((EFTF/IFC), BESANÇON, France, 9-13 July 2017. p. 805-806. DOI : 10.1109/FCS.2017.8089040.

Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes

N. Oliva; E. A. Casu; W. A. Vitale; I. Stolichnov; M. A. Ionescu 

2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, September, 11-14, 2017. DOI : 10.1109/ESSDERC.2017.8066602.

Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications

E. A. Casu; W. A. Vitale; M. Tamagnone; M. M. Lopez; N. Oliva et al. 

2017. ESSDERC 2017 – 47th IEEE European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium, 11-14 September 2017. p. 232-235. DOI : 10.1109/ESSDERC.2017.8066634.

Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation

A. Saeidi; F. Jazaeri; F. Bellando; I. Stolichnov; C. Enz et al. 

2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, Leuven, Belgium, 11-14 Sept. 2017. DOI : 10.1109/ESSDERC.2017.8066596.

Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing

A. Saeidi; F. Jazaeri; I. Stolichnov; G. V. Luong; Q-T. Zhao et al. 

2017. Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.

Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing

M. M. Lopez; E. A. Casu; M. Fernandez-Bolanos; A. M. Ionescu 

2017.  p. 391. DOI : 10.3390/proceedings1040391.

2016

Journal Articles

Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

J. L. Padilla; C. Alper; F. Gamiz; A. M. Ionescu 

IEEE Transactions on Electron Devices. 2016. Vol. 63, num. 8, p. 3320-3326. DOI : 10.1109/Ted.2016.2574893.

Graphene Quantum Capacitors for High Frequency Tunable Analog Applications

C. F. Moldovan; W. A. Vitale; P. Sharma; M. Tamagnone; J. R. Mosig et al. 

Nano Letters. 2016. Vol. 16, num. 8, p. 4746-4753. DOI : 10.1021/acs.nanolett.5b05235.

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

A. Saeidi; A. Biswas; A. M. Ionescu 

Solid State Electronics. 2016. Vol. 124, p. 16-23. DOI : 10.1016/j.sse.2016.07.025.

Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices

A. Rusu; A. Saeidi; A. M. Ionescu 

Nanotechnology. 2016. Vol. 27, num. 11, p. 115201. DOI : 10.1088/0957-4484/27/11/115201.

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

A. Saeidi; F. Jazaeri; I. Stolichnov; M. A. Ionescu 

IEEE Transactions on Electron Devices. 2016. Vol. 63, num. 12, p. 4678-4684. DOI : 10.1109/Ted.2016.2616035.

Tri-Band, Polarization-Independent Reflectarray at Terahertz Frequencies: Design, Fabrication, and Measurement

H. Hasani; M. Tamagnone; S. Capdevila Cascante; C. F. Moldovan; P. Maoddi et al. 

IEEE Transactions On Terahertz Science And Technology. 2016. Vol. 6, num. 2, p. 268-277. DOI : 10.1109/Tthz.2016.2522301.

Near optimal graphene terahertz non-reciprocal isolator

M. Tamagnone; C. Moldovan; J-M. Poumirol; A. B. Kuzmenko; A. M. Ionescu et al. 

Nature Communications. 2016. Vol. 7, p. 11216. DOI : 10.1038/ncomms11216.

Switching Behavior Constraint in the Heterogate Electron–Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations

J. L. Padilla; C. Alper; F. Gamiz; A. M. Ionescu 

IEEE Transactions on Electron Devices. 2016. Vol. 63, num. 6, p. 2570-2576. DOI : 10.1109/TED.2016.2556083.

The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization

C. Alper; P. Palestri; J. L. Padilla; A. M. Ionescu 

IEEE Transactions on Electron Devices. 2016. Vol. 63, num. 6, p. 2603-2609. DOI : 10.1109/TED.2016.2557282.

Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor

J. L. Padilla; A. Palomares; C. Alper; F. Gamiz; A. M. Ionescu 

Journal Of Applied Physics. 2016. Vol. 119, num. 4, p. 045705. DOI : 10.1063/1.4940741.

Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET

C. Alper; P. Palestri; J. L. Padilla; M. A. Ionescu 

Semiconductor Science and Technology. 2016. Vol. 31, num. 4, p. 045001. DOI : 10.1088/0268-1242/31/4/045001.

Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters

W. A. Vitale; L. Petit; C. F. Moldovan; M. Fernández-Bolaños; A. Paone et al. 

Sensors & Actuators: A. Physical. 2016. Vol. 241, p. 245-253. DOI : 10.1016/j.sna.2016.01.027.

Conference Papers

Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

E. Casu; W. Vitale; N. Oliva; T. Rosca; A. Biswas et al. 

2016. 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 3-7 December 2016. p. 19.3.1-19.3.4. DOI : 10.1109/IEDM.2016.7838452.

Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs

C. F. Moldovan; W. A. Vitale; M. Tamagnone; J. R. Mosig; A. M. Ionescu 

2016. ESSDERC 2016 – 46th European Solid-State Device Research Conference, Lausanne, Switzerland, 12-15 September 2016. p. 345-348. DOI : 10.1109/ESSDERC.2016.7599657.

Field-enhanced design of steep-slope VO2 switches for low actuation voltage

W. A. Vitale; M. Tamagnone; C. F. Moldovan; N. Emond; E. A. Casu et al. 

2016. ESSDERC 2016 – 46th European Solid-State Device Research Conference, Lausanne, Switzerland, 12-15 September 2016. p. 352-355. DOI : 10.1109/ESSDERC.2016.7599659.

Assessment of Confinement-Induced Band-to-Band Tunneling Leakage in the FinEHBTFET

J. L. Padilla; C. Alper; F. Gamiz; A. M. Ionescu 

2016. 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EURSOI-ULIS), TU Wien, Inst Microelectron, Vienna, AUSTRIA, JAN 25-27, 2016. p. 20-23. DOI : 10.1109/ULIS.2016.7440042.

Ultra-Low Power Ion-Sensing Smart Platform for Noninvasive Healthcare Applications

E. A. Garcia Cordero; H. M. Guérin; A. Muhech; F. Bellando; M. A. Ionescu 

2016. Smart Systems Integration, Munich, Germany, March 9-10, 2016.

Heterogeneous Integration of Low Power pH FinFET sensors with Passive Capillary Microfluidics and miniaturized Ag/AgCl quasi-Reference Electrode

E. A. Garcia Cordero; H. M. Guérin; A. Muhech; F. Bellando; M. A. Ionescu 

2016. European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland, September 12-15, 2016. p. 452-455.

Vertical versus lateral tunneling FET non-volatile memory cell

A. Biswas; S. Tomar; A. M. Ionescu 

2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 42-43. DOI : 10.1109/SNW.2016.7577976.

Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K

A. Biswas; S. Tomar; A. M. Ionescu 

2016. 2016 74th Annual Device Research Conference (DRC), Newark, DE, USA, 19-22 June 2016. p. 1-2. DOI : 10.1109/DRC.2016.7548493.

Solid-gap resonators based on PVDF-TrFE

M. M. Lopez; E. A. Casu; W. A. Vitale; A. M. Ionescu 

2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 72-73. DOI : 10.1109/SNW.2016.7577990.

Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope

W. A. Vitale; C. F. Moldovan; A. Paone; A. Schuler; A. M. Ionescu 

2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 180-181. DOI : 10.1109/SNW.2016.7578041.

Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications

E. A. Casu; M. M. Lopez; W. A. Vitale; M. Fernandez-Bolanos; A. M. Ionescu 

2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 70-71. DOI : 10.1109/SNW.2016.7577989.

Posters

Sub-20nm gaps in HSQ for ultra-scaled nanoelectronic devices

M. Rupakula; W. A. Vitale 

42nd Micro Nano Engineering, Vienna, Austria, Septemeber 19-23,2016.

2015

Journal Articles

Large area suspended graphene for nano-mechanical devices

T. Hallam; C. F. Moldovan; K. Gajewski; A. M. Ionescu; G. S. Duesberg 

Physica Status Solidi B-Basic Solid State Physics. 2015. Vol. 252, num. 11, p. 2429-2432. DOI : 10.1002/pssb.201552269.

Solid-gap wine-glass mode disks VB-FET resonators applied to biomass sensing

M. M. Lopez; M. F-B. Badia; W. Vitale; A. M. Ionescu 

Microelectronic Engineering. 2015. Vol. 145, p. 53-57. DOI : 10.1016/j.mee.2015.03.005.

Comment on ‘Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gale’

J. L. Padilla de la Torre; C. Alper; F. Gámiz; M. A. Ionescu 

Semiconductor Science and Technology. 2015. Vol. 30, num. 12, p. 128001-1-128001-3. DOI : 10.1088/0268-1242/30/12/128001.

Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor Including Quantum Confinement

J. L. Padilla de la Torre; C. Alper; A. Godoy; F. Gámiz; M. A. Ionescu 

IEEE Transactions on Electron Devices. 2015. DOI : 10.1109/TED.2015.2476350.

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

S. Rigante; P. Scarbolo; M. Wipf; R. L. Stoop; K. Bedner et al. 

ACS Nano. 2015. Vol. 9, num. 5, p. 4872-4881. DOI : 10.1021/nn5064216.

On the MIMO Capacity for Distributed System under Composite Rayleigh/Rician Fading and Shadowing

S. Gonzalez-Aurioles; J. L. Padilla; P. Padilla; J. F. Valenzuela-Valdes; J. C. Gonzalez-Macias 

International Journal Of Antennas And Propagation. 2015.  p. 105017. DOI : 10.1155/2015/105017.

Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION

W. A. Vitale; C. F. Moldovan; M. Tamagnone; A. Paone; A. Schüler et al. 

IEEE Electron Device Letters. 2015. Vol. 36, num. 9, p. 972-974. DOI : 10.1109/LED.2015.2454535.

Fabrication process and characterization of suspended graphene membranes for RF NEMS capacitive switches

C. F. Moldovan; W. A. Vitale; P. Sharma; L. S. Bernard; A. M. Ionescu 

Microelectronic Engineering. 2015. Vol. 145, p. 5-8. DOI : 10.1016/j.mee.2015.01.032.

Fabrication of CMOS-compatible abrupt electronic switches based on vanadium dioxide

W. A. Vitale; C. F. Moldovan; A. Paone; A. Schüler; A. M. Ionescu 

Microelectronic Engineering. 2015. Vol. 145, p. 117-119. DOI : 10.1016/j.mee.2015.03.055.

Assessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor

J. L. Padilla de la Torre; C. Alper; C. Medina-Bailón; F. Gámiz; M. A. Ionescu 

Applied Physics Letters. 2015. Vol. 106, num. 26, p. 2621021-2621024. DOI : 10.1063/1.4923467.

Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature

P. Sharma; L. S. Bernard; A. Bazigos; A. Magrez; A. M. Ionescu 

IEEE Electron Device Letters. 2015. Vol. 36, num. 8, p. 865-867. DOI : 10.1109/LED.2015.2445858.

Two dimensional quantum mechanical simulation of low dimensional tunneling devices

C. Alper; P. Palestri; L. Lattanzio; J. Padilla; A. Ionescu 

Solid-State Electronics. 2015. Vol. 113, p. 167-172. DOI : 10.1016/j.sse.2015.05.030.

Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

J. Cao; S. T. Bartsch; A. M. Ionescu 

Acs Nano. 2015. Vol. 9, num. 3, p. 2836-2842. DOI : 10.1021/nn506817y.

Self-biased reconfigurable graphene stacks for terahertz plasmonics

J. S. Gomez-Diaz; C. Moldovan; S. Capdevila Cascante; J. Romeu; L. S. Bernard et al. 

Nature Communications. 2015. Vol. 6. DOI : 10.1038/ncomms7334.

Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

J. L. Padilla de la Torre; C. Alper; F. Gámiz; M. A. Ionescu 

Applied Physics Letters. 2015. Vol. 106, num. 2, p. 026102-1. DOI : 10.1063/1.4905866.

Capacity in Weibull Fading with Shadowing for MIMO Distributed System

S. Gonzalez-Aurioles; J. F. Valenzuela-Valdes; J. L. Padilla; P. Padilla; F. Luna-Valero 

Wireless Personal Communications. 2015. Vol. 80, num. 4, p. 1625-1633. DOI : 10.1007/s11277-014-2103-6.

Gate-controlled mid-infrared light bending with aperiodic graphene nanoribbons array

E. Carrasco; M. Tamagnone; J. R. Mosig; T. Low; J. Perruisseau-Carrier 

Nanotechnology. 2015. Vol. 26, num. 13. DOI : 10.1088/0957-4484/26/13/134002.

Carbon nanotube gas sensor array for multiplex analyte discrimination

H. Guerin; H. Le Poche; R. Pohle; E. Buitrago; M. F-B. Badia et al. 

Sensors And Actuators B-Chemical. 2015. Vol. 207, p. 833-842. DOI : 10.1016/j.snb.2014.10.117.

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

P. Sharma; L. S. Bernard; A. Bazigos; A. Magrez; A. M. Ionescu 

ACS Nano. 2015. Vol. 9, num. 1, p. 620-625. DOI : 10.1021/nn5059437.

Conference Papers

Efficient quantum mechanical simulation of band-to-band tunneling

C. Alper; P. Palestri; J. L. Padilla; A. Gnudi; R. Grassi et al. 

2015. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy, 26-28 January 2015. p. 141-144. DOI : 10.1109/ULIS.2015.7063793.

Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k.p

C. Alper; M. Visciarelli; P. Palestri; J. L. Padilla; A. Gnudi et al. 

2015. 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA, 9-11 September 2015. p. 273-276. DOI : 10.1109/SISPAD.2015.7292312.

Compact modeling of DG-Tunnel FET for Verilog-A implementation

A. Biswas; L. De Michielis; A. Bazigos; A. M. Ionescu 

2015. ESSDERC 2015 – 45th European Solid-State Device Research Conference, Graz, Austria, 14-18 September 2015. p. 40-43. DOI : 10.1109/ESSDERC.2015.7324708.

A capacitance-voltage model for DG-TFET

A. Biswas; M. A. Ionescu 

2015. IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, 14-15 June 2015. p. 1-2.

Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature

P. Sharma; L. S. Bernard; A. Bazigos; A. Magrez; A. M. Ionescu 

2015. Device Research Conference (DRC), 2015 73rd Annual, Columbus, OH, USA, June 21-24, 2015. p. 267-268. DOI : 10.1109/DRC.2015.7175676.

Ultra Fine-Pitch TSV Technology for Ultra-Dense High-Q RF Inductors

W. A. Vitale; M. Fernández-Bolaños; A. Klumpp; J. Weber; P. Ramm et al. 

2015. 2015 Symposium on VLSI Technology, Kyoto, Japan, June 15-19, 2015.

Tunable Capacitors and Microwave Filters Based on Vanadium Dioxide Metal-Insulator Transition

W. A. Vitale; M. Fernández-Bolaños; C. F. Moldovan; A. Paone; A. Schüler et al. 

2015. 18th International Conference on Solid-State Sensors, Actuators and Microsystems Transducers 2015, Anchorage, Alaska, USA, June 21-25, 2015.

Graphene RF NEMS shunt switches for analog and digital phase shifters

C. F. Moldovan; W. A. Vitale; M. Tamagnone; M. A. Ionescu 

2015. Transducers Conference, Anchorage, Alaska, US, June, 21-25, 2015.

Performance evaluation of novel technologies for terahertz reflectarrays

M. Tamagnone; S. Capdevila Cascante; H. Hasani; P. Romano; W. A. Vitale et al. 

2015. 2015 Europaen Microwave Week, Paris, France, September, 6-11, 2015.

Design, Fabrication and Characterization of Terahertz Reflectarrays Based on a Silicon Substrate

H. Hasani; M. Tamagnone; S. Capdevila Cascante; C. F. Moldovan; M. A. Ionescu et al. 

2015. International Conference on Metamaterials, Photonic Crystals and Plasmonics, New York, US, August, 4-7, 2015.

Evaluation of graphene for terahertz reflectarray antennas

M. Tamagnone; S. Capdevila Cascante; H. Hasani; C. F. Moldovan; M. A. Ionescu et al. 

2015. Graphene Week 2015, Manchester, UK, June, 22-26, 2015.

Fine Pitch 3D-TSV Based High Frequency Components for RF MEMS Applications

W. A. Vitale; M. Fernández-Bolaños; R. Merkel; A. Enayati; I. Ocket et al. 

2015. IEEE Electronic Components and Technology Conference, San Diego, California, USA, May 26-29, 2015.

Negative Differential Resistance in Top-Gated Chemical Vapor Deposition Grown Graphene Transistors

P. Sharma; L. S. Bernard; A. Bazigos; A. Magrez; M. A. Ionescu 

2015. Graphene Conference, Bilbao, Spain, March 10-13, 2015.

Spatial Variability in Large Area Single and Few-layer CVD Graphene

C. F. Moldovan; K. Gajewski; M. Tamagnone; R. S. Weatherup; H. Sugime et al. 

2015. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy, January 26-28, 2015.

CMOS-compatible abrupt switches based on VO2 metal-insulator transition

W. A. Vitale; C. F. Moldovan; A. Paone; A. Schueler; A. M. Ionescu 

2015. Ultimate Integration on Silicon, Bologna, Italy, January 26-28, 2015.

2014

Conference Papers

Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts

C. L. Ayala; D. Grogg; A. Bazigos; S. J. Bleiker; M. Fernandez-Bolanos et al. 

2014. 44th European Solid-State Device Research Conference (ESSDERC), Venice, ITALY, SEP 22-26, 2014. p. 157-166. DOI : 10.1016/j.sse.2015.05.029.

Measurement of biased graphene stacks at terahertz: dynamic reconfiguration and hysteresis

J. S. Gomez-Diaz; C. Moldova; S. Capdevilla; L. S. Bernard; J. Romeu et al. 

2014. 8th European Conference on Antennas and Propagation (EuCAP), The Hague, The Netherlands, April, 6-11, 2014.

Microfluidic beamscanning optical leaky-wave antenna concept

J. Jacome-Munoz; J. S. Gomez-Diaz; A. Alvarez-Melcon; M. Garcıa-Vigueras; J. Perruisseau-Carrier 

2014. 8th European Conference on Antennas and Propagation (EuCAP), The Hague, The Netherlands, April, 6-11, 2014. DOI : 10.1109/EuCAP.2014.6901712.

A tapered CRLH mushroom-like leaky wave antenna with reduced sidelobe level

J. Jacome-Munoz; J. S. Gomez-Diaz; J. Perruisseau-Carrier; A. Alvarez-Melcon 

2014. 8th European Conference on Antennas and Propagation (EuCAP), The Hague, The Netherlands, April, 6-11, 2014. DOI : 10.1109/EuCAP.2014.6901826.

Study of spatial dispersion in graphene parallel-plate waveguides and equivalent circuit

D. Correas-Serrano; J. S. Gomez-Diaz; J. Perruisseau-Carrier; A. Alvarez-Melcon 

2014. 8th European Conference on Antennas and Propagation (EuCAP), The Hague, The Netherlands, April, 6-11, 2014. DOI : 10.1109/EuCAP.2014.6902374.

Finfet With Fully Ph-Responsive Hfo2 As Highly Stable Biochemical Sensor

S. Rigante; M. Wipf; A. Bazigos; K. Bedner; D. Bouvet et al. 

2014. [27th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)’, u’27th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)’]. p. 1063-1066.

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

N. Dagtekin; A. M. Ionescu 

2014. 44th European Solid-State Device Research Conference (ESSDERC)’, 44th European Solid-State Device Research Conference (ESSDERC)’. p. 190-193.

Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices

C. Alper; P. Palestri; L. Lattanzio; J. L. Padilla; A. M. Ionescu 

2014. 44th European Solid-State Device Research Conference (ESSDERC), 44th European Solid-State Device Research Conference (ESSDERC)’]. p. 186-189. DOI : 10.1109/ESSDERC.2014.6948791.

A 6.7 MHz Nanoelectromechanical Ring Oscillator Using Curved Cantilever Switches Coated with Amorphous Carbon

C. L. Ayala; D. Grogg; A. Bazigos; M. F-B. Badia; U. T. Duerig et al. 

2014. 44th European Solid-State Device Research Conference (ESSDERC), 44th European Solid-State Device Research Conference (ESSDERC)’]. p. 66-69.

Compact Modeling of Homojunction Tunnel FETs

A. Biswas; N. Dagtekin; C. Alper; L. De Michielis; A. Bazigos et al. 

2014. 21st International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES)’, u’21st International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES). p. 54-57.

Steep slope VO2 switches for wide-band (DC-40 GHz) reconfigurable electronics

W. A. Vitale; A. Paone; M. Fernandez-Bolanos; A. Bazigos; W. Grabinski et al. 

2014. 72nd Annual Device Research Conference (DRC), June 2014. p. 29-30.

Posters

Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor

E. A. Casu; S. Rigante; M. Fernandez-Bolanos Badia; M. A. Ionescu 

40th Micro and Nano Engineering Conference, Lausanne, CH, September 22-26, 2014.