Recent Publication List (2017-2020)

 

2020

Journal Articles

Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature

A. Müller; R. A. Khadar; T. Abel; N. Negm; T. Rosca et al. 

ACS Applied Electronic Materials. 2020-04-16. num. [Just Accepted]. DOI : 10.1021/acsaelm.0c00078.

Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO2 on Si Oscillators

E. Corti; A. Khanna; K. Niang; J. Robertson; K. E. Moselund et al. 

IEEE Electron Device Letters. 2020-04-04. Vol. 41, num. 4, p. 629 – 632. DOI : 10.1109/LED.2020.2972006.

2019

Journal Articles

Scaled resistively-coupled VO2 oscillators for neuromorphic computing

E. Corti; B. Gotsmann; K. Moselund; A. M. Ionescu; J. Robertson et al. 

Solid-State Electronics. 2019-12-25.  p. 107729. DOI : 10.1016/j.sse.2019.107729.

Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization

A. Verhulst; A. Saeidi; I. Stolichnov; A. Alian; H. Iwai et al. 

IEEE Transactions on Electron Devices. 2019-12-17. Vol. 67, num. 1, p. 377-382. DOI : 10.1109/TED.2019.2954585.

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

A. A. Muller; A. Moldoveanu; V. Asavei; R. A. Khadar; E. Sanabria-Codesal et al. 

Scientific Reports. 2019-12-04. Vol. 9, p. 18346. DOI : 10.1038/s41598-019-54600-5.

Scaled resistively-coupled VO2 oscillators for neuromorphic computing

E. Corti; B. Gotsmann; K. E. Moselund; M. A. Ionescu; J. Robertson et al. 

Solid-State Electronics. 2019-11-26. DOI : 10.1016/j.sse.2019.107729.

Detection of ultra-low protein concentrations with the simplest possible field effect transistor

Y. M. Georgiev; N. Petkov; R. Yu; A. M. Nightingale; E. Buitrago et al. 

Nanotechnology. 2019-08-09. Vol. 30, num. 32, p. 324001. DOI : 10.1088/1361-6528/ab192c.

Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric

N. Oliva; Y. Y. Ilarionov; E. A. Casu; M. Cavalieri; T. Knobloch et al. 

IEEE Journal of the Electron Devices Society. 2019-08-07. Vol. 7, p. 1163-1169. DOI : 10.1109/JEDS.2019.2933745.

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

J. Zhang; M. Rupakula; F. Bellando; E. G. Cordero; J. Longo et al. 

Acs Sensors. 2019-08-01. Vol. 4, num. 8, p. 2039-2047. DOI : 10.1021/acssensors.9b00597.

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

J. Zhang; M. Rupakula; F. Bellando; E. A. Garcia Cordero; F. Wildhaber et al. 

ACS Sensors. 2019-07-08. Vol. 4, num. 8, p. 2039-2047. DOI : 10.1021/acssensors.9b00597.

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

A. Saeidi; F. Jazaeri; I. Stolichnov; C. Enz; M. A. Ionescu 

Scientific Reports. 2019-06-24. Vol. 9, p. 9105 . DOI : 10.1038/s41598-019-45628-8.

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

A. Saeidi; F. Jazaeri; I. Stolichnov; C. C. Enz; A. M. Ionescu 

Scientific Reports. 2019-06-24. Vol. 9, p. 9105. DOI : 10.1038/s41598-019-45628-8.

Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering

T. Mittmann; M. Materano; P. D. Lomenzo; M. H. Park; I. Stolichnov et al. 

Advanced Materials Interfaces. 2019-06-01. Vol. 6, num. 11, p. 1900042. DOI : 10.1002/admi.201900042.

NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration

J. Ahopelto; G. Ardila; L. Baldi; F. Balestra; D. Belot et al. 

Solid-State Electronics. 2019-05-01. Vol. 155, p. 7-19. DOI : 10.1016/j.sse.2019.03.014.

Towards X-ray transient grating spectroscopy

C. Svetina; R. Mankowsky; G. Knopp; F. Koch; G. Seniutinas et al. 

Optics Letters. 2019-02-01. Vol. 44, num. 3, p. 574-577. DOI : 10.1364/OL.44.000574.

Conference Papers

A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO2) Phase Change Switches

A. Müller; R. Abdul Khadar; E. A. Casu; A. Krammer; M. Cavaleri et al. 

2019-05-07. 2019 IEEE MTT-S International Microwave Symposium (IMS), Boston, June 7-11,2019. p. 865-867. DOI : 10.1109/MWSYM.2019.8701121.

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV

A. Saeidi; A. S. Verhulst; I. Stolichnov; A. Alian; H. Iwai et al. 

2019-01-17. IEEE International Electron Devices Meeting (IEDM). DOI : 10.1109/IEDM.2018.8614583.

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

M. Rupakula; J. Zhang; F. Bellando; F. Wildhaber; C. Convertino et al. 

2019-01-01. 49th European Solid-State Device Research Conference (ESSDERC), Cracow, POLAND, Sep 23-26, 2019. p. 106-109.

2018

Journal Articles

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

E. Garcia-Cordero; F. Bellando; J. Zhang; F. Wildhaber; J. Longo et al. 

ACS Nano. 2018-12-13. Vol. 12, num. 12, p. 12646-12656. DOI : 10.1021/acsnano.8b07413.

Stabilization of ferroelectric HfxZr1-xO2 films using a millisecond flash lamp annealing technique

E. O’Connor; M. Halter; F. Eltes; M. Sousa; A. Kellock et al. 

Apl Materials. 2018-12-01. Vol. 6, num. 12, p. 121103. DOI : 10.1063/1.5060676.

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

E. Garcia-Cordero; F. Bellando; J. Zhang; F. Wildhaber; J. Longo et al. 

Acs Nano. 2018-12-01. Vol. 12, num. 12, p. 12646-12656. DOI : 10.1021/acsnano.8b07413.

A Review and Mathematical Treatment of Infinity on the Smith Chart, 3D Smith Chart and Hyperbolic Smith Chart

M. Jose Perez-Penalver; E. Sanabria-Codesal; F. Moldoveanu; A. Moldoveanu; V. Asavei et al. 

Symmetry-Basel. 2018-10-01. Vol. 10, num. 10, p. 458. DOI : 10.3390/sym10100458.

Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor

J. L. Padilla; C. Medina-Bailon; C. Marquez; C. Sampedro; L. Donetti et al. 

IEEE Transactions on Electron Devices. 2018-10-01. Vol. 65, num. 10, p. 4679-4686. DOI : 10.1109/TED.2018.2866123.

Dopant-Induced Modifications of GaxIn(1-x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)

N. Bologna; S. Wirths; L. Francaviglia; M. Campanini; H. Schmid et al. 

Acs Applied Materials & Interfaces. 2018-09-26. Vol. 10, num. 38, p. 32588-32596. DOI : 10.1021/acsami.8b10770.

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

I. Stolichnov; M. Cavalieri; E. Colla; T. Schenk; T. Mittmann et al. 

Acs Applied Materials & Interfaces. 2018-09-12. Vol. 10, num. 36, p. 30514-30521. DOI : 10.1021/acsami.8b07988.

A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition

E. A. Casu; A. A. Muller; M. Cavalieri; A. Fumarola; A. M. Ionescu et al. 

Ieee Microwave And Wireless Components Letters. 2018-09-01. Vol. 28, num. 9, p. 795-797. DOI : 10.1109/LMWC.2018.2854961.

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

A. Saeidi; F. Jazaeri; I. Stolichnov; G. V. Luong; Q-T. Zhao et al. 

Nanotechnology. 2018-01-26. Vol. 29, num. 9, p. 095202. DOI : 10.1088/1361-6528/aaa590.

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

N. Oliva; E. A. Casu; W. A. Vitale; I. Stolichnov; A. M. Ionescu 

Ieee Journal Of The Electron Devices Society. 2018-01-01. Vol. 6, num. 1, p. 1041-1047. DOI : 10.1109/JEDS.2018.2817289.

Two-Dimensional Materials Negative capacitance gives a positive boost

A. Ionescu 

Nature Nanotechnology. 2018. Vol. 13, num. 1, p. 7-8. DOI : 10.1038/s41565-017-0046-2.

Special Section Proposal Tunable Devices for Modern Communications: Materials, Integration, Modeling, and Applications

A. A. Muller; R. Ziolkowski; J. Kim; E. Blokhina; M. Dragoman et al. 

IEEE Access. 2018. Vol. 6, p. 42368-42372. DOI : 10.1109/ACCESS.2018.2855259.

Magnetoplasmonic enhancement of Faraday rotation in patterned graphene metasurfaces

M. Tamagnone; T. Slipchenko; C. Moldovan; P. Liu; A. Centeno et al. 

Physical Review B. 2018. Vol. 97, num. 24. DOI : 10.1103/PhysRevB.97.241410.

III-V heterostructure tunnel field-effect transistor

C. Convertino; C. Zota; H. Schmid; A. Ionescu; K. Moselund 

JOURNAL OF PHYSICS-CONDENSED MATTER. 2018. Vol. 30, num. 26. DOI : 10.1088/1361-648X/aac5b4.

Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor

J. Padilla; C. Medina-Bailon; C. Alper; F. Gamiz; A. Ionescu 

Applied Physics Letters. 2018. Vol. 112, num. 18. DOI : 10.1063/1.5012948.

Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities

J. Padilla; C. Medina-Bailon; C. Navarro; C. Alper; F. Gamiz et al. 

IEEE TRANSACTIONS ON ELECTRON DEVICES. 2018. Vol. 65, num. 1, p. 339-346. DOI : 10.1109/TED.2017.2777666.

A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET

C. Alper; J. Padilla; P. Palestri; A. Ionescu 

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2018. Vol. 6, num. 1, p. 2-7. DOI : 10.1109/JEDS.2017.2758018.

Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW

E. A. Casu; A. A. Muller; M. Fernandez-Bolanos; A. Fumarola; A. Krammer et al. 

IEEE Access. 2018. Vol. 6, p. 12206-12212. DOI : 10.1109/ACCESS.2018.2795463.

Tunable RF phase shifters based on Vanadium Dioxide metal insulator transition

E. A. Casu; N. Oliva; M. Cavalieri; A. A. Muller; A. Fumarola et al. 

IEEE Journal of the Electron Devices Society. 2018.  p. 1-1. DOI : 10.1109/JEDS.2018.2837869.

Conference Papers

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

N. Oliva; E. A. Casu; M. Cavalieri; M. A. Ionescu 

2018-10-11. 48th European Solid-State Device Research Conference – ESSDERC 2018, 3-6 Sept. 2018 , Dresden, Germany. p. 114-117. DOI : 10.1109/ESSDERC.2018.8486867.

Steep Slope Transistors for Quantum Computing

M. A. Ionescu; T. Rosca; C. Alper 

2018-07-31. IEEE 2nd Electron Devices Technology and Manufacturing Conference – EDTM 2018, Kobe, Japan , 13-16 March 2018 . p. 56 – 58. DOI : 10.1109/EDTM.2018.8421422.

Low power analog frontend for ISFET sensor readout

J. Zhang; F. Bellando; E. A. Garcia Cordero; M. Fernandez-Bolanos Badia; M. A. Ionescu et al. 

2018-07-15. 17th International Meeting on Chemical Sensors – IMCS 2018, Vienna, Austria, 2018-07-15 – 2018-07-19. DOI : 10.5162/IMCS2018/FE.1.

Sodium Concentration Of Sweat Correlates With Dietary Sodium Intake

P. Braconnier; N. Loncle; J. D. S. Lourenco; H. Guerin; M. Burnier et al. 

2018-06-01. 28th European Meeting of Hypertension and Cardiovascular Protection of the European-Society-of-Hypertension (ESH), Barcelona, SPAIN, Jun 08-11, 2018. p. E170-E170. DOI : 10.1097/01.hjh.0000539466.81926.69.

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

A. Saeidi; F. Jazaeri; I. Stlichnov; C. Enz; M. A. Ionescu 

2018-03-13. 

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

N. Oliva; E. A. Casu; C. Yan; A. Krammer; A. Magrez et al. 

2018-01-25. IEDM, San Francisco, California, USA, December 2-6, 2017. DOI : 10.1109/IEDM.2017.8268503.

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

A. Saeidi; F. Jazaeri; I. Stolichnov; G. Luong; Q. Zhao et al. 

2018-01-01. 2017 Silicon Nanoelectronics Workshop, Kyoto, Japan, June 4-5, 2017. DOI : 10.23919/SNW.2017.8242270.

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices

I. O’Connor; M. Cantan; C. Marchand; B. Vilquin; S. Slesazeck et al. 

2018-01-01. 26th IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), Verona, ITALY, Oct 08-10, 2018. p. 180-183.

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V-DD=400mV

A. Saeidi; A. S. Verhulst; I. Stolichnov; A. Alian; H. Iwai et al. 

2018-01-01. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018.

An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays: Digital and Analog Figures of Merit from 300K to 10K

T. Rosca; A. Saeidi; E. Memisevic; -E. Wernersson; A. M. Ionescu 

2018-01-01. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018.

Resistive coupled VO2 oscillators for image recognition

E. Corti; B. Gotsmann; K. Moselund; I. Stolichnov; A. Ionescu et al. 

2018-01-01. 3rd IEEE International Conference on Rebooting Computing (ICRC), Tysons, VA, Nov 07-09, 2018. p. 195-201.

Advanced Sensor Systems by Low-Temperature Heterogeneous 3D Integration Processes

M. Fernandez-Bolanos; A. A. Muller; J. Weber; P. Ramm 

2018-01-01. 20th Symposium on Design, Test, Integration and Packaging of MEMS and MOEMS (DTIP), Roma, ITALY, May 22-25, 2018.

All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensing

J. -R. Zhang; M. Rupakula; F. Bellando; E. G. Cordero; J. Longo et al. 

2018-01-01. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018.

The Future of Electronics: Silicon to Cloud Technologies

A. M. Ionescu 

2018-01-01. 20th International Conference on Transparent Optical Networks (ICTON), Bucharest, ROMANIA, Jul 01-05, 2018.

Remotely-Powered Front-End at 2.45 GHz for Real-Time Continuous Temperature Sensing

O. Kazanc; F. Maloberti; C. Dehollain 

2018-01-01. IEEE International Conference on RFID (RFID), Orlando, FL, Apr 10-12, 2018.

CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity

J-R. Zhang; F. Bellando; M. Rupakula; E. G. Cordero; N. Ebejer et al. 

2018-01-01. 76th Device Research Conference (DRC), Santa Barbara, CA, Jun 24-27, 2018.

Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications

A. Aziz; E. Breyer; A. Chen; X. Chen; S. Datta et al. 

2018. Proceedings Of The 2018 Design, Automation & Test In Europe Conference & Exhibition (Date), Dresden, GERMANY, Mar 19-23, 2018. p. 1289-1298. DOI : 10.23919/DATE.2018.8342213.

Embedded Passive Nano-Liter Micropump For Sweat Collection And Analysis

E. A. Garcia Cordero; F. Wildhaber; F. Bellando; J. F. Longo; M. Fernandez-Bolanos Badia et al. 

2018. 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Belfast, NORTH IRELAND, Jan 21-25, 2018. p. 1217-1220.

2017

Journal Articles

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

N. Oliva; E. A. Casu; C. Yan; A. Krammer; T. Rosca et al. 

Scientific Reports. 2017. Vol. 7, num. 1, p. 14250. DOI : 10.1038/s41598-017-12950-y.

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

A. Saeidi; F. Jazaeri; F. Bellando; I. Stolichnov; G. V. Luong et al. 

IEEE Electron Device Letters. 2017. Vol. 38, num. 10, p. 1485-1488. DOI : 10.1109/LED.2017.2734943.

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

W. A. Vitale; E. A. Casu; A. Biswas; T. Rosca; C. Alper et al. 

Scientific Reports. 2017. Vol. 7, num. 1. DOI : 10.1038/s41598-017-00359-6.

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

A. Biswas; G. V. Luong; M. F. Chowdhury; C. Alper; Q-T. Zhao et al. 

IEEE Transactions on Electron Devices. 2017.  p. 1-8. DOI : 10.1109/TED.2017.2665527.

Conference Papers

Lab on skin™: 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications

F. Bellando; E. Garcia-Cordero; F. Wildhaber; J. Longo; H. Guerin et al. 

2017-12-05. 2017 IEEE International Electron Devices Meeting – IEDM 2017, San Francisco, CA, US, December 2-6, 2017. p. 978-1-5386-3559-9. DOI : 10.1109/IEDM.2017.8268413.

Energy efficient computing and sensing in the Zettabyte era: From silicon to the cloud

M. A. Ionescu 

2017. 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2-6 Dec, 2017. DOI : 10.1109/IEDM.2017.8268307.

Lab On Skin: 3D Monolitically Integrated Zero-Energy Micro/Nanofluidics and FD SOI Ion Sensitive FETs for Wearable Multi-Sensing Sweat Applications

F. Bellando; E. A. Garcia Cordero; F. Wildhaber; J. F. Longo; H. M. Guérin et al. 

2017. 63rd International Electron Device Meeting, San Francisco, California, USA,

Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators.

M. M. Lopez; E. A. Casu; A. M. Ionescu; M. Fernandez-Bolanos 

2017. 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium ((EFTF/IFC), BESANÇON, France, 9-13 July 2017. p. 805-806. DOI : 10.1109/FCS.2017.8089040.

Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes

N. Oliva; E. A. Casu; W. A. Vitale; I. Stolichnov; M. A. Ionescu 

2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, September, 11-14, 2017. DOI : 10.1109/ESSDERC.2017.8066602.

Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications

E. A. Casu; W. A. Vitale; M. Tamagnone; M. M. Lopez; N. Oliva et al. 

2017. ESSDERC 2017 – 47th IEEE European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium, 11-14 September 2017. p. 232-235. DOI : 10.1109/ESSDERC.2017.8066634.

Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation

A. Saeidi; F. Jazaeri; F. Bellando; I. Stolichnov; C. Enz et al. 

2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, Leuven, Belgium, 11-14 Sept. 2017. DOI : 10.1109/ESSDERC.2017.8066596.

Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing

A. Saeidi; F. Jazaeri; I. Stolichnov; G. V. Luong; Q-T. Zhao et al. 

2017. Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.

Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing

M. M. Lopez; E. A. Casu; M. Fernandez-Bolanos; A. M. Ionescu 

2017.  p. 391. DOI : 10.3390/proceedings1040391.