2006

Conference Papers: Y. S. Chauhan, F. Krummenacher, C. Anghel, R. Gillon, B. Bakeroot, M. Declercq, A. M. Ionescu, ”Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs”, IEEE International Electron Device Meeting, IEDM 2006, San Francisco CA, December 2006. N. Abelé, A. Villaret, A. Gangadharaiah, C. Gabioud, P. Ancey, A.M. Ionescu, ”1T MEMS Memory Based on Suspended Gate MOSFET”, IEEE International Electron Device Meeting, IEDM 2006, San Francisco CA, December 2006. V. Pott, D. Bouvet, K. E. Moselund, A. M. Ionescu, “Carrier mobility in ultra-scaled gate-all-around silicon nanowires”, 2006 International Conference on Nano Science and Nano Technology, GJ-NST 2006, Gwangju, Korea, 7-8 Dec. 2006. D. Tsamados, C. Anghel, A. M. Ionescu, ”Light-enhanced Hysteresis in Pentacene Field-effect Transistors”, 2006 International Conference on Nano Science and Nano Technology, GJ-NST 2006, Gwangju, Korea, 7-8 Dec. 2006. C. Leroy, M. B. Pisani, R. Fritschi, C. Hibert, A. M. Ionescu, “High quality factor copper inductors on wafer-level quartz package for RF MEMS applications”, Proceedings of the 36th European Solid-State Devices Research Conference, ESSDERC 2006, pp. 190-193, Montreux, Switzerland, 19-21 Sept. 2006. Y. S. Chauhan, C. Anghel, F. Krummenacher, A. M. Ionescu, M. Declercq, R. Gillon, S. Frere, B. Desoete, “A highly scalable high voltage MOSFET model”, Proceedings of the 36th European Solid-State Devices Research Conference, ESSDERC 2006, pp. 270-273, Montreux, Switzerland, 19-21 Sept. 2006. A. S. Roy, Y. S. Chauhan, J. M. Sallese, C. C. Enz, A. M. Ionescu, M. Declercq, “Partioning scheme in lateral asymmetric MOST”, Proceedings of the 36th European Solid-State Devices Research Conference, ESSDERC 2006, pp. 307-310, Montreux, Switzerland, 19-21 Sept. 2006. K. E. Moselund, D. Bouvet, L. Tschuor, V. Pott, P. Dainesi, A. M. Ionescu, “Local volume inversion and corner effects in triangular gate-all-around MOSFETs”, Proceedings of the 36th European Solid-State Devices Research Conference, ESSDERC 2006, pp. 359-362, Montreux, Switzerland, 19-21 Sept. 2006. K. Boucart, A. M. Ionescu, “Double gate tunnel FET with ultrathin silicon body and high-k dielectric”, Proceedings of the 36th European Solid-State Devices Research Conference, ESSDERC 2006, pp. 383-386, Montreux, Switzerland, 19-21 Sept. 2006. (Young Scientist Award) V. Pott, D. Bouvet, J. Boucart, L. Tschuor, K. E. Moselund, A. M. Ionescu, “Low temperature single electron characteristics in gate-all-around MOSFETs”, Proceedings of the 36th European Solid-State Devices Research Conference, ESSDERC 2006, pp. 427-430, Montreux, Switzerland, 19-21 Sept. 2006. V. Pott, J. Boucart, D. Bouvet, K. E. Moselund, A. M. Ionescu, “Coulomb blockade in gate-all-around silicon nanowire MOSFETs”, Proceedings of IEEE 2006 silicon nanoelectronics workshop, VLSI 2006 workshop, pp. 25-26. Honolulu, Hawaii, 11-12 June 2006. K. E. Moselund, L. Tschuor, D. Bouvet, V. Pott, P. Dainesi, C. Eggimann, N. Le Thomas, R. Houdré, A. M. Ionescu, “Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling”, Proceedings of IEEE 2006 silicon nanoelectronics workshop, VLSI 2006 workshop, pp. 31-32, Honolulu, Hawaii, 11-12 June 2006. C. Anghel, M. Manolescu, A. M. Ionescu, “Pentacene organic MOSFETs with Au and Pt bottom contacts”, International Semiconductor Conference, CAS 2006, Sinaia, Romania, October 2006. N. Abelé, K. Séguéni, K. Boucart, F. Casset, L. Buchaillot, P. Ancey, A. M. Ionescu, “Ultra-low voltage MEMS resonator based on RSG-MOSFET”, MEMS 2006, pp. 882-885. Y. S. Chauhan, C. Anghel, F. Krummenacher, R. Gillon, A. Baguenier, B. Desoete, S. Frere, A. M. Ionescu, M. Declercq, “A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor”, IEEE International Symposium on Quality Electronic Design, ISQED 2006, San Jose, USA, March 2006. A. Mehdaoui, M. B. Pisani, R. Fritschi, P. Ancey, A. M. Ionescu, “Vertical co-integration of AlSi MEMS tunable capacitors and Cu inductors for tunable LC blocks”, MNE 2006, Barcelona, Spain, 17-20 September 2006. C. Leroy, M. B. Pisani, C. Hibert, D. Bouvet, M. Puech, A. M. Ionescu, “High Quality Factor Copper Inductors Integrated in Deep Dry Etched Quartz Substrates”, Proceedings of the 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. A. Mehdaoui, M. B. Pisani, D. Tsamados, F. Casset, P. Ancey, A. M. Ionescu, “MEMS Tunable Capacitor with Fragmented Electrodes and Rotational Electro-Thermal Drive”, Proceedings of the 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. M. Fernández-Bolaños, P. Dainesi, A. Luque, J.M. Quero, A. M. Ionescu, “MEMS Capacitive Pressure Sensor Based on Polysilicon Sealed Membrane”, XX Eurosensors, vol. 2, pp. 456-457, Göteborg (Sweden), 17-20 Sept. 2006. N.-D. Badila, C. Hibert, M. Mazza, A. M. Ionescu, “Fabrication of Silicon-On-Insulator MEM Resonators with Deep Sub-Micron Transduction Gaps”, Proceedings of the 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. A. Mehdaoui, D. Tsamados, F. Casset, A. M. Ionescu, P. Ancey, “MEMS Tunable Capacitor with laterally driven fragmented electrodes and electro-thermal actuation”, MEMSWAVE 2006, Orvieto, Italy, 27-30 June 2006. A. Luque, R. G. Bolea, M. Fernández-Bolaños, A. M. Ionescu, J. M. Quero, “Capacitive pressure microsensor fabricated by bulk micromachining and sacrificial layer etching”, 32nd Annual Conference on IEEE Industrial Electronics, IECON 2006, pp. 2969-2974, Paris, France, 7-10 Nov. 2006 Journal Papers: Y. S. Chauhan, C. Anghel, F. Krummenacher, C. Maier, R. Gillon, B. Bakeroot, B. Desoete, S. Frere, A. Baguenier Desormeaux, A. Sharma et al., ”Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects”, Solid-State Electronics, vol. 50, iss. 11-12, pp 1801-1813, Nov.-Dec. 2006. M. Fernández-Bolaños, N. Abelé, V. Pott, D. Bouvet, G. A. Racine, J. M. Quiero, A. M. Ionescu, “Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor”, Microelectronic Engineering, vol. 83, pp. 1185-1188, 2006. V. Pott, A. M. Ionescu, “Conduction in ultra-thin SOI nanowires prototyped by FIB milling”, Microelectronic Engineering, vol. 83, pp. 1718-1720, 2006. S. Ecoffey, D. Bouvet, S. Mahapatra, G. Reimbold, A. M. Ionescu, “Electrical conduction in 10 nm thin polysilicon wires from 4 to 400 K and their operation for hybrid memory”, Japanese Journal of Applied Physics, Vol. 45, No. 6B, pp. 5461-5466, 2006. C. Anghel, B. Bakeroot, Y. S. Chauhan, R. Gillon, C. Maier, P. Moens, J. Doutreloigne, A. M. Ionescu, “New Method for Threshold Voltage Extraction of High Voltage MOSFETs based on Gate-to-Drain Capacitance Measurement”, IEEE Electron Device Letters, Vol. 27, No. 7, pp. 602-604, July 2006. K. E. Moselund, J. E. Freiermuth, P. Dainesi, A. M. Ionescu, “Experimental study of the process dependence of Mo, Cr, Ti, and W silicon Schottky diodes and contact resistance”, IEEE Transactions on Electron Devices, Pages 712-718, Volume 53, Issue 4, April 2006. K. E. Moselund, P. Dainesi, M. Declercq, M. Bopp, P. Coronel, T. Skotnicki, A.M. Ionescu, “Compact gate-all-around silicon light modulator for ultra high speed operation”, Sensors and Actuators A: Physical, 2006. J. Perruisseau-Carrier, R. Fritschi, P. Crespo-Valero, A.K. Skrivervik, “Modeling of periodic distributed MEMS-Application to the design of variable true-time delay lines”, IEEE Trans. Microwave Theory Tech. 54 (1), pp. 383-392, Jan. 2006. Invited presentations: A. M. Ionescu, ”Hybrid CMOS – Single Electron Transistor Circuits: Promise or Dream?”, 2006 International Conference on Nano Science and Nano Technology, GJ-NST 2006, Gwangju, Korea, 7-8 Dec. 2006. A. M. Ionescu, “Nano-scale ICT devices and systems”, Future and Emerging Technologies, IST Event 2006, Helsinki, Finland, 21-22 Nov. 2006. [-> more info] V. Pott, D. Bouvet, K. E. Moselund, A. M. Ionescu, “Gate-all-around MOSFETs: true fabrication and characteristics”, SINANO workshop on silicon nanodevices, Beyond CMOS: Emerging devices, Aachen, Germany, 7-8 Nov. 2006. S. Ecoffey, V. Pott, S. Mahapatra, D. Bouvet, A. M. Ionescu, “Hybrid Nanowire-MOS circuit architectures: from basic physics to digital and analog applications”, 6e Rencontres du Vietnam, Nanophysics 2006, Hanoi, Vietnam, 8-12 Aug. 2006.