2008 ‒ Nanolab ‐ EPFL

Conference Papers:

D. Grogg, M. Mazza, D. Tsamados, A. M. Ionescu, “Multi-Gate Vibrating-Body Field Effect Transistors (VB-FETs)”, IEDM 2008, San Francisco, USA, 15-17 December 2008. (Finalist in the IEDM 2008 Student Best Paper Award)
G. A. Salvatore, D. Bouvet, A. M. Ionescu, “Demonstration of Subthrehold Swing Smaller Than 60 mV/decade in Fe-FET with P(VDF-TrFE)/SiO2 Gate Stack”, IEDM 2008, San Francisco, USA, 15-17 December 2008.
M. Fernández-Bolaños, T. Lisec, P. Dainesi, A. M. Ionescu, ”Thermally Stable Distributed MEMS Phase Shifter for Airborne and Space Applications”, EuMC 2008, Amsterdam, NL, October 2008.
A. Arun, P. Salet, A. M. Ionescu, “SWCNT/MWCNT Crossed Junction by Two-Step Dielectrophoresis”, ESSDERC 2008, 15-19 September 2008, Edinburgh, Scotland, UK.
G. A. Salvatore, D. Bouvet, I. Stolitchnov, N. Setter, A. M. Ionescu, “Low Voltage Ferroelectric FET with sub-100nm Copolymer P(VDF-TrFE) Gate Dielectric for Non-Volatile 1T Memory”, ESSDERC 2008, 15-19 September 2008, Edinburgh, Scotland, UK.
V. Pott, K. E. Moselund and A. M. Ionescu, ”Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: application to abrupt inverter and NDR circuits”, ESSDERC 2008, 15-19 September 2008, Edinburgh, Scotland, UK.
D. Grogg, C. Meinen, D. Tsamados, H. C. Tekin, M. Kayal and A. M. Ionescu, ”Double Gate Movable Body Micro-Electro-Mechanical FET as Hysteretic Switch: Application to Data Transmission Systems”, ESSDERC 2008, 15-19 September 2008, Edinburgh, Scotland, UK.
M. Najmzadeh, K. E. Moselund, P. Dobrosz, S. Olsen, A. O’Neill, A. M. Ionescu, “Investigation of Strain Profile Optimization in Gate-All-Around Suspended Silicon Nanowire FET”, Fringe poster session, ESSDERC 2008, 15-19 September 2008, Edinburgh, Scotland, UK.
D. Acquaviva, G. Salvatore, D. Bouvet, D. Tsamados, P. Coronel, T. Skotnicki, A. M. Ionescu, “Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch”, 34th International Conference on Micro- and Nano-Engineering, MNE 2008, 15-19 September 2008, Athens, Greece.
M. Bopp, P. Coronel, J. Bustos, C. Pribat, P. Dainesi, T. Skotnicki, A. M. Ionescu, ”Silicon Nanostructuring for 3D Bulk Silicon Versatile Devices”, MNE 2008, 15-19 September 2008, Athens, Greece.
M. Fernández-Bolaños, P. Dainesi, A. M. Ionescu, ”High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)”, MEMSWAVE, 30 June – 03 July 2008, Heraklion, Greece.
D. Grogg, H. C. Tekin, N. D. Badila-Ciressan, M. Mazza, D. Tsamados, A. M. Ionescu, ”Laterally vibrating-body double gate MOSFET with improved signal detection”, DRC 2008, 23-25 June 2008, Santa-Barbara, USA.
D. Grogg, H. C. Tekin, N. D. Badila-Ciressan, D. Tsamados, M. Mazza, A. M. Ionescu, ”Nano-Gap High Quality Factor Thin Film SOI MEM Resonators”, NANOTEC 2008, 01-05 June, Boston, USA.
A. Arun, P. Salet, A. M. Ionescu, “Trapping Individual Carbon Nanotubes”, Electronic Materials Conference, 25-27 June 2008, Santa Barbara, US.
M. Bopp, P. Coronel, F. Judong, K. Jouannic, A. Talbot, D. Ristoiu, C. Pribat, N. Bardos, F. Pico, M.P. Samson, P. Dainesi, A. M. Ionescu and T. Skotnicki, ”3D Nanostructured Silicon Relying on Hard Mask Engineering for High Temperature Annealing (HME-HTA) Processes for Electronic Devices”, NANOTEC 2008, 01-05 June 2008, Boston, US.
N. V. Cvetkovic, D. Tsamados, K. Sidler, J. Brugger, A. M. Ionescu, “Pentacene – SiO₂ Interface: Role of the Environment Prior to Pentacene Deposition and its Impact on TFT DC Characteristics”, IEEE MIEL Conference, 11-14 May 2008, Nis, Serbia.
G. A. Salvatore, D. Bouvet, M. A. Ionescu, S. Riester, I. Stolichnov, R. Gysel, N. Setter, “1T memory cell based on PVDF-TrFE Field Effect Transistor”, MRS 2008, 24-28 March 2008, San Francisco, USA.
Y. S. Chauhan, D. Tsamados, N. Abele, C. Eggimann, M. Declercq, A. M. Ionescu, “Compact Modeling of Suspended Gate FET”, IEEE Conference on VLSI Design 2008, Hyderabad, India, Jan. 2008. (Honorable Mention Award)
K. E. Moselund, V. Pott, D. Bouvet, A. M. Ionescu, ”Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS PIMOS switch”, International Symposium on VLSI Technology, Systems and Applications (2008 VLSI-TSA), 21-23 April 2008, Taiwan.
K. E. Moselund, V. Pott, C. Meinen, D. Bouvet, M. Kayal, A. M. Ionescu, ”DRAM based on hysteresis in impact ionization single-transistor-latch”, MRS Spring Meeting, 24-28 March 2008, San Francisco, USA.
D. Molinero, N. Abele, L. Castaner, et al., “Oxide charging and memory effects in suspended-gate FET”, IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2008), 13-17 January 2008, Tucson, USA.

Journal Papers:

J. Bhandari, M. Vineta, T. Poirouxa, B. Previtalia, B. Vincenta, L. Hutina, J.P. Barnesa, S. Deleonibusa, A. M. Ionescu, “Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)”, Materials Science and Engineering, vol. 154-155, pp. 114-117, December 2008.
F. Balestra, E. Parker, D. Leadley, S. Mantl, E. Dubois, O. Engstroma, R. Clerc, S. Cristoloveanu, H. Kurz, J. P. Raskin, M. Lemmea, A. M. Ionescu, K. E. Moselund, K. Boucart, E. Kasper, A. Karmous, M. Baus, B. Spangenberg, M. Ostling, E. Sangiorgi, G. Ghibaudo, D. Flandre, “NANOSIL network of excellence – silicon-based nanostructures and nanodevices for long-term nanoelectronics applications”, Materials Science in Semiconductor Processing, December 2008.
M. H. B. Jamaa, K. E. Moselund, D. Atienza, D. Bouvet, A. M. Ionescu, Y. Leblebici, G. De Micheli, “Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories”, IEEE Transactions on Computer-Aided Design of Iintegrated Circuits and Systems, vol. 27, iss. 11, pp. 2053-2067, November 2008.
V. Pott, K. E. Moselund, D. Bouvet, L. De Michielis, A. M. Ionescu, “Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon”, IEEE Transactions on Nanotechnology, vol. 7, iss. 6, pp. 733-744, November 2008.
M. Fernández-Bolaños, T. Lisec, P. Dainesi, A. M. Ionescu, “Thermally stable distributed MEMS phase shifter for airborne and space applications,” 38th European Microwave Conference, Proceeding of, pp. 100-103, October 2008.
D. Tsamados, Y. S. Chauhan, C. Eggimann, et al., “Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters”, Solid-State Electronics, vol. 52, iss. 9, pp. 1374-1381, September 2008.
K. E. Moselund, D. Bouvet, A. M. Ionescu, “Abrupt NMOS inverter based on punch-through impact ionization with hysteresis in the voltage transfer characteristics”, IEEE Electron Device Letters, vol. 29, iss. 9, pp. 1059-1061, September 2008.
K. Boucart, A. M. Ionescu, ”A new definition of threshold voltage in Tunnel FETs”, Solid-State Electronics, vol. 52, iss. 9, pp. 1318-1323, September 2008.
K. E. Moselund, D. Bouvet, V. Pott, C. Meinen, M. Kayal, A. M. Ionescu, ”Punch-through impact ionization MOSFET (PIMOS): From device principle to applications”, Solid-State Electronics, vol. 52, iss. 9, pp. 1336-1344, September 2008.
N. D. Badila-Ciressan, M. Mazza, D. Grogg, A. M. Ionescu, ”Nano-Gap Micro-Electro-Mechanical Bulk Lateral Resonators with High Quality Factors and Low Motional Resistances on Thin Silicon-On-Insulator”, Solid State Electronics, vol. 52, iss. 9, pp. 1394-1400, September 2008.
D. Grogg, N. D. Badila-Ciressan, A. M. Ionescu, “Focussed ion beam based fabrication of micro-electro-mechanical resonators”, Microsystem Techologies Microand Nanosystems Information Storage and Processing Systems, vol. 14, iss. 7, pp. 1049-1053, July 2008.
C. Durand, F. Casset, P. Renaux, N. Abelé, B. Legrand, D. Renaud, E. Ollier, P. Ancey, A. M. Ionescu, L. Buchaillot, “In-plane silicon-on-nothing nanometer-scale resonant suspended gate MOSFET for In-IC integration perspectives”, IEEE Electron Device Letters, vol. 29, iss. 5, pp. 494-496, May 2008.
K. E. Moselund, D. Bouvet, M. H. Ben Jamaa, D. Atienza, Y. Leblebici, G. De Micheli, A. M. Ionescu, ”Prospects for Logic-On-A-Wire”, special edition of Microelectronic Engineering, vol. 85, iss. 5-6, pp. 1406-1409, May 2008.
N. V. Cvetkovic, D. Tsamados, K. Sidler, J. Brugger, A. M. Ionescu, “Pentacene – SiO2 Interface: Role of the Environment Prior to Pentacene Deposition and its Impact on TFT DC Characteristics”, 26th International Conference On Microelectronics (MIEL 2008), Proceedings of, vol. 1, pp. 295-297, May 2008.
M. Fernández-Bolaños, J. Perruisseau-Carrier, P. Dainesi, A. M. Ionescu, ”RF MEMS Capacitive Switch on Semi-Suspended CPW using Low-Loss High-Resistivity Silicon Substrate”, Microelectronic Engineering, vol. 85, pp. 1039-1042, Feb. 2008.
K. Akarvardar, C. Eggimann, D. Tsamados, Y. S. Chauhan, G. C. Wan, A. M. Ionescu, R. T. Howe, H.-S. P. Wong, “Analytical Modeling of the Suspended-Gate FET and Design Insights for Low Power Logic”, IEEE Transactions on Electron Devices, vol. 51, no. 1, pp. 48-59, January 2008.

Invited presentations: