2013 Journal Articles


Journal Articles

Spatially Dispersive Graphene Single and Parallel Plate Waveguides: Analysis and Circuit Model

D. Correas-Serrano; J. S. Gomez-Diaz; J. Perruisseau-Carrier; A. Alvarez-Melcon 

IEEE Transactions On Microwave Theory And Techniques. 2013. Vol. 61, num. 12, p. 4333-4344. DOI : 10.1109/Tmtt.2013.2286971.

Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic

M. Najmzadeh; Y. Tsuchiya; D. Bouvet; W. Grabinski; A. M. Ionescu 

Microelectronic Engineering. 2013. Vol. 110, p. 278-281. DOI : 10.1016/j.mee.2013.02.003.

An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

L. De Michielis; N. DağTekin; A. Biswas; L. Lattanzio; L. Selmi et al. 

Applied Physics Letters. 2013. Vol. 103, num. 12, p. 123509. DOI : 10.1063/1.4821100.

Quantum Mechanical Study of the Germanium Electron-Hole Bilayer Tunnel FET

C. Alper; L. Lattanzio; L. De Michielis; P. Palestri; L. Selmi et al. 

IEEE Transactions on Electron Devices. 2013. Vol. 60, num. 9, p. 2754-2760. DOI : 10.1109/TED.2013.2274198.

FinFET integrated low-power circuits for enhanced sensing applications

S. Rigante; P. Livi; A. Rusu; Y. Chen; A. Bazigos et al. 

Sensors and Actuators B: Chemical. 2013. Vol. 186, p. 789-795. DOI : 10.1016/j.snb.2013.06.031.

Single electron transistors with ultra-thin Au nanowires as a single Coulomb island

M. Yoshihira; S. Moriyama; H. Guerin; Y. Ochi; H. Kura et al. 

Applied Physics Letters. 2013. Vol. 102, num. 20, p. 203117. DOI : 10.1063/1.4807806.

Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?

L. De Michielis; L. Lattanzio; K. E. Moselund; H. Riel; A. M. Ionescu 

IEEE Electron Device Letters. 2013. Vol. 34, num. 6, p. 726-728. DOI : 10.1109/LED.2013.2257665.

Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor

E. Buitrago; G. Fagas; M. F-B. Badia; Y. M. Georgiev; M. Berthomé et al. 

Sensors and Actuators B: Chemical. 2013. Vol. 183, p. 1-10. DOI : 10.1016/j.snb.2013.03.028.

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

C. Alper; L. De Michielis; N. Dağtekin; L. Lattanzio; D. Bouvet et al. 

Solid-State Electronics. 2013. Vol. 84, p. 205-210. DOI : 10.1016/j.sse.2013.02.032.

Measurement and Compact Modeling of 1/f Noise in HV-MOSFETs

N. Mavredakis; M. Bucher; R. Friedrich; A. Bazigos; F. Krummenacher et al. 

IEEE Transactions on Electron Devices. 2013. Vol. 60, num. 2, p. 670-676. DOI : 10.1109/TED.2012.2230329.

Conference Papers

A transmission line model for plasmon propagation on a graphene strip

J. S. Gomez-Diaz; J. Perruisseau-Carrier 

2013. 2013 International Microwave Symposium (IMS 2013), Seattle, USA, June, 2-7, 2013. DOI : 10.1109/MWSYM.2013.6697750.

Design of a reflectarray element integrated in a solar cell panel

P. Dreyer; J-S. Gomez-Diaz; J. Perruisseau-Carrier 

2013. 2013 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, Orlando, USA, July, 7-13, 2013. p. 1558-1559. DOI : 10.1109/APS.2013.6711438.

Functionalized 3D 7×20-array of vertically stacked SiNW FET for streptavidin sensing

E. Buitrago; M. F-B. Badia; Y. M. Georgiev; R. Yu; O. Lotty et al. 

2013. 2013 71st Annual Device Research Conference (DRC), Notre Dame, IN, USA, 23-26 06 2013. p. 1-2. DOI : 10.1109/DRC.2013.6633887.

Silicon nanowires reliability and robustness investigation using AFM-based techniques

T. Bieniek; G. Janczyk; P. Janus; P. Grabiec; M. Nieprzecki et al. 

2013. DOI : 10.1117/12.2031229.

Ultra low power NEMFET based logic

M. Enachescu; M. Lefter; A. Bazigos; A. M. Ionescu; S. Dan Cotofana 

2013. 2013 IEEE International Symposium on Circuits and Systems (ISCAS), Beijing, China, 19-23 05 2013. p. 566-569. DOI : 10.1109/ISCAS.2013.6571905.

A study on 1T Capacitor-less Tunnel FET DRAM Exploiting Ungated Body

A. Biswas; N. Dagtekin; W. Grabinski; A. Bazigos; C. Le Royer et al. 

2013. ISDRS 2013, Washington DC, USA, December 11-13, 2013.

Mobility Extraction Assessment in GAA Si NW JL FETs with Cross-Section Down to 5 nm

M. Najmzadeh; J-M. Sallese; M. Berthome; W. Grabinski; A. M. Ionescu 

2013. 14th International Conference on Ultimate Integration on Silicon (ULIS). p. 106-109. DOI : 10.1109/ULIS.2013.6523512.

High-k dielectric FinFETs towards Sensing Integrated Circuits

S. Rigante; P. Scarbolo; D. Bouvet; M. Wipf; A. Tarasov et al. 

2013. 14th International Conference on Ultimate Integration on Silicon (ULIS). p. 73-76. DOI : 10.1109/ULIS.2013.6523494.

Tungsten Through Silicon Vias for 3D high quality factor embedded RF MEMS inductors

W. A. Vitale; M. Fernández-Bolaños Badía; R. Wieland; J. Weber; A. Klumpp et al. 

2013. 39th International Conference on Micro and Nano Engineering, London, UK, September 16-19, 2013.

RF MEMS power sensors for ultra-low power wake-up circuit applications

W. A. Vitale; M. Fernández-Bolaños Badía; A. Bazigos; C. Dehollain; A. M. Ionescu 

2013. 43rd Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, September 16-20, 2013. DOI : 10.1109/ESSDERC.2013.6818875.

Horizontal growth of dense carbon nanotube membranes for interconnects and sensors

H. Le Poche; A. Fournier; J. Dijon; H. Okuno; H. Guerin et al. 

2013. Annual meeting of the GDR-I GNT: Graphene and Nanotubes Science and Applications, Ecully, France, January 23-27, 2012.

Sustained Nano-Mechanical Oscillation of a Resonant-Body Transistor by Frequency-Modulated Heterodyne Phase-Locked-Loop

S. T. Bartsch; A. Rusu; M. A. Ionescu 

2013. 2013 Symposia on VLSI Technology and Circuits (2013 Silicon Nanoelectronics Workshop), Kyoto, Japan, June 9-14, 2013.

Growth of graded doped Si/SiGe Heterostructure Tunnel FET

S. Wirths; S. Blaeser; A. Biswas; A. T. Tiedemann; P. Bernardy et al. 

2013. E-MRS 2013, Strasbourg, France, May 27-31, 2013.

Nanoelectromechanical microwave switch based on graphene

P. Sharma; J. Perruisseau Carrier; A. M. Ionescu 

2013. 2013 14th International Conference on Ultimate Integration on Silicon (ULIS), Coventry, United Kingdom, 19-21 03 2013. p. 189-192. DOI : 10.1109/ULIS.2013.6523516.