2012

Journal Articles

Vertically stacked Si nanostructures for biosensing applications

E. Buitrago; M. Fernández-Bolaños; A. M. Ionescu 

Microelectronic Engineering. 2012. Vol. 97, p. 345-348. DOI : 10.1016/j.mee.2012.03.017.

Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

S. Barraud; M. Berthome; R. Coquand; M. Casse; T. Ernst et al. 

IEEE Electron Device Letters. 2012. Vol. 33, num. 9, p. 1225-1227. DOI : 10.1109/Led.2012.2203091.

In-situ grown horizontal carbon nanotube membrane

H. Guerin; D. Tsamados; H. Le Poche; J. Dijon; A. M. Ionescu 

Microelectronic Engineering. 2012. Vol. 97, p. 166-168. DOI : 10.1016/j.mee.2012.05.017.

On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET

L. Lattanzio; N. Dagtekin; L. De Michielis; A. M. Ionescu 

IEEE Transactions on Electron Devices. 2012. Vol. 59, num. 11, p. 2932-2938. DOI : 10.1109/Ted.2012.2211600.

Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

L. De Michielis; L. Lattanzio; A. M. Ionescu 

IEEE Electron Device Letters. 2012. Vol. 33, num. 11, p. 1523-1525. DOI : 10.1109/LED.2012.2212175.

Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor

S. T. Bartsch; A. Rusu; M. A. Ionescu 

Applied Physics Letters. 2012. DOI : 10.1063/1.4758991.

Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs

M. Najmzadeh; J-M. Sallese; M. Berthomé; W. Grabinski; M. A. Ionescu 

IEEE Transactions on Electron Devices. 2012. Vol. 59, p. 3519-3526. DOI : 10.1109/TED.2012.2220363.

Streched organic transistors maintain mobility on flexible substrates

K. Sidler; N. V. Cvetkovic; D. Tsamados; A. M. Ionescu; J. Brugger et al. 

Microelectronic Engineering. 2012. Vol. 98, p. 508-511. DOI : 10.1016/j.mee.2012.07.080.

Organic half-wave rectifier fabricated by stencil lithography on flexible substrate

N. V. Cvetkovic; K. Sidler; V. Savu; J. Brugger; D. Tsamados et al. 

Microelectronic Engineering. 2012. Vol. 100, p. 47-50. DOI : 10.1016/j.mee.2012.07.110.

RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric

M. Fernández-Bolaños Badía; E. Buitrago; A. M. Ionescu 

Journal of Microelectromechanical Systems. 2012.  p. 1-12. DOI : 10.1109/JMEMS.2012.2203101.

Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors

J. Cao; A. M. Ionescu 

Solid-State Electronics. 2012. Vol. 74, p. 121-125. DOI : 10.1016/j.sse.2012.04.022.

TCAD Simulation of SOI TFETs and Calibration of Non-local Band-to-Band Tunneling Model

A. Biswas; S. S. Dan; C. Le Royer; W. Grabinski; M. A. Ionescu 

Microelectronic Engineering. 2012. Vol. 98, p. 334-337. DOI : 10.1016/j.mee.2012.07.077.

Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility

M. Najmzadeh; Y. Tsuchiya; D. Bouvet; W. Grabinski; M. A. Ionescu 

IEEE Transactions on Nanotechnology. 2012. Vol. 11, p. 902-906. DOI : 10.1109/TNANO.2012.2205401.

La récolte d’énergie pour les micro et nanosystèmes autonomes

D. Briand; M. A. Ionescu 

Journal ElectroSuisse. 2012. Vol. 6, p. 30-36.

Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor

G. A. Salvatore; A. Rusu; A. M. Ionescu 

Applied Physics Letters. 2012. Vol. 100, p. -. DOI : 10.1063/1.4704179.

The electron–hole bilayer tunnel FET

L. Lattanzio; L. De Michielis; A. M. Ionescu 

Solid-State Electronics. 2012. Vol. 74, p. 85-90. DOI : 10.1016/j.sse.2012.04.016.

Non-contact characterization of graphene surface impedance at micro and millimeter waves

J. S. Gomez-Diaz; J. Perruisseau-Carrier; P. Sharma; M. A. Ionescu 

Journal of Applied Physics. 2012. Vol. 111, p. 114908-7. DOI : 10.1063/1.4728183.

Single Active Nanoelectromechanical Tuning Fork Front-End Radio-Frequency Receiver

S. Bartsch; A. Rusu; M. A. Ionescu 

Nanotechnology. 2012. Vol. 23, num. 22, p. 225501. DOI : 10.1088/0957-4484/23/22/225501.

Self-Aligned Lateral Dual-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect Transistors

J. Cao; A. M. Ionescu 

Applied Physics Letters. 2012. Vol. 100, p. 063103. DOI : 10.1063/1.3682085.

Nanoelectronics: Ferroelectric devices show potential

A. M. Ionescu 

Nature Nanotechnology. 2012. Vol. 7, p. 83-85. DOI : 10.1038/nnano.2012.10.

Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation

L. Lattanzio; L. De Michielis; A. M. Ionescu 

IEEE Electron Device Letters. 2012. Vol. 33, num. 2, p. 167-169. DOI : 10.1109/LED.2011.2175898.

A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction

S. S. Dan; A. Biswas; C. L. Royer; W. Grabinski; A. M. Ionescu 

IEEE Electron Device Letters. 2012. Vol. 33, num. 2, p. 140-142. DOI : 10.1109/LED.2011.2174027.

Conference Papers

Coulomb blockade in a granular material made of gold nanowires

H. Guerin; M. Yoshihira; H. Kura; T. Ogawa; T. Sato et al. 

2012. 12th IEEE International Conference on Nanotechnology (IEEE-NANO), Birmingham, United Kingdom, August 20-23, 2012. DOI : 10.1109/NANO.2012.6322047.

Precise Alignment of Individual Carbon Nanotubes for Nanoelectronics

J. Cao; A. M. Ionescu 

2012. 12th IEEE International Conference on Nanotechnology (IEEE-NANO).

Large-Scale Assembly of Tunable Resonant-Body Carbon Nanotube Transistors without Hysteresis

J. Cao; S. Bartsch; M. A. Ionescu 

2012. IEEE International Electron Devices Meeting IEDM, San Francisco, USA, Dec 10-13, 2012.

Resonant-Body Silicon Nanowire Field Effect Transistor without Junctions

S. Bartsch; C. Dupré; E. Ollier; M. A. Ionescu 

2012. 2012 IEEE International Electron Devices Meeting IEDM, San Francisco, USA, December 10-13, 2012.

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

C. Alper; L. De Michielis; N. Dagtekin; L. Lattanzio; A. M. Ionescu 

2012. ESSDERC 2012 – 42nd European Solid State Device Research Conference, Bordeaux, France, 17-21 09 2012. p. 161-164. DOI : 10.1109/ESSDERC.2012.6343358.

Gate-All-Around Buckled Dual Si Nanowire nMOSFETs on Bulk Si for Transport Enhancement and Digital Logic Application

M. Najmzadeh; Y. Tsuchiya; D. Bouvet; W. Grabinski; M. A. Ionescu 

2012. 38th International Conference on Micro and Nano Engineering (MNE), Toulouse, France, September 16-20, 2012.

New Tunnel-FET Architecture with Enhanced Ion and Improved Miller Effect for Energy Efficient Switching

A. Biswas; C. Alper; L. D. Michielis; A. M. Ionescu 

2012. 70th Device Research Conference, State College, PA, USA, June 18-20, 2012. p. 131-132. DOI : 10.1109/DRC.2012.6256999.

High-Q 3D Embedded Inductors using TSV for RF MEMS Tunable Bandpass Filters (4.65-6.8 GHz)

W. A. Vitale; M. Fernandez-Bolanos Badia; M. A. Ionescu 

2012. 42nd European Microwave Conference, Amsterdam, Netherlands,

Determination of minimum conductivity of graphene from contactless microwaves measurements

P. Sharma; J. S. Gomez-Diaz; M. A. Ionescu; J. Perruisseau-Carrier 

2012. IEEE NANO 2012 – 12th International Conference on Nanotechnology, Birmingham, UK, August, 20-23, 2012. DOI : 10.1109/NANO.2012.6322060.

Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain

M. Najmzadeh; D. Bouvet; W. Grabinski; J-M. Sallese; M. A. Ionescu 

2012.  p. 114-120. DOI : 10.1016/j.sse.2012.04.021.

Self-Assembled Nano-Electro-Mechanical Tri-state Carbon Nanotube Switches for Reconfigurable Integrated Circuits

J. Cao; W. A. Vitale; A. M. Ionescu 

2012. IEEE MEMS 2012, Paris, Jan. 29-Feb. 2, 2012.