NanoLab
Recent Highlights
Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots
In this work, Fabio Bersano demonstrates the integration of nano-sized cobalt control gates into a fully-depleted silicon-on-insulator (FDSOI) nanowire architecture, combining electrical and ferromagnetic properties for scalable quantum computing with electron spins. The design supports stray magnetic fields for electric dipole spin resonance (EDSR) and achieves functional quantum dot formation at cryogenic temperatures. Characterization and micromagnetic simulations confirm front-end-of-line (FEOL) compatibility, high material quality, and suitability for EDSR operation in magnetic fields exceeding 1 T. Check it out in Advanced Functional Materials.
Vanadium-Doped Hafnium Oxide: A High-Endurance Ferroelectric Thin Film with Demonstrated Negative Capacitance
In this study, Ehsan Ansari introduced vanadium-doped HfO₂ (V:HfO₂) as a novel CMOS-compatible ferroelectric thin film, developed through an optimized atomic layer deposition (ALD) process. He demonstrated its outstanding endurance of over 10¹¹ cycles, long-term nonvolatile retention (projected 10-years), and negative capacitance characteristics. The implications of this doped high-k ferroelectric are significant, with the potential to drive future advancements in computing, nonvolatile memory, and neuromorphic devices and circuits. For more details, check out the publication in Nano Letters.
Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices
In his research, Sadegh Kamaei has introduced an innovative technology that merges the capabilities of continuous analog processing with the precision of digital devices. This pioneering approach involves integrating ultra-thin, two-dimensional semiconductors with ferroelectric materials, offering a novel means to enhance energy efficiency and introduce additional functionalities in computing. Explore the details in the latest issue of Nature Electronics.
News
NanoLab at Transducer2025 in Orlando, USAThree members of NanoLab have been accepted for talks at IEEE Transducers 2025 in Orlando, Florida. Their papers cover a diverse range of topics, from CMOS-compatible biosensing platforms to antiferroelectric capacitors and VO₂ nanostructures: Lotte De Schrijver et al., “CMOS-compatible biosensing platform for multiplexed lactate and pH monitoring in low-volume biosamples” Hung-Wei Li et al., “CMOS-compatible antiferroelectric-dielectric capacitors for multifunctional energy storage and tunable electronics“ Vanessa Conti et al., “An investigation of VO2 nanowire arrays for integrated sensing. From non-stochastic nanowires to stochastic nanostructures” |
Fabio Bersano presents at IEDM2024Fabio Bersano, PhD student of NanoLab, presented his work titled “Integration of Co Nanomagnets for Localized EDSR in Scalable FDSOI Spin Qubit Architectures” at IEDM24, held in San Francisco, USA. The presented study validates the integration of thin cobalt nanomagnets in a FEOL-compatible process for EDSR manipulation in Si spin qubits, showcasing the design, fabrication, and electrically characterization of three compact spin qubit architectures with Co nanomagnets on Fully Depleted Silicon-on-Insulator.
|
Prof. Adrian Ionescu receives the IEEE Cledo Brunetti Award at IEDM2024Professor Adrian Ionescu, head of NanoLab, was awarded the prestigious IEEE Cledo Brunetti Award at IEDM2024 in San Francisco for “leadership and contributions to the field of energy-efficient steep slope devices and technologies“.
|
Nanolab wins Melexis GrantOur Nanoelectronic Devices Laboratory was selected for a funding program in collaboration with the Belgian company Melexis for the proposal “Real-time monitoring of stress hormone with wearable graphene sensors in the interstitial fluid”. Under this industrial affiliation program, Melexis and EPFL will explore innovative solutions for improving the accuracy, reliability, and accessibility of health data using nano- and microsystems. |
April 2024Professor Adrian M. Ionescu was awarded the title of Doctor Honoris Causa from the Politehnica University of Bucharest, Romania. The honorary degree is a distinction offered by a university to a personality who has made his or her mark in a particular field. |
December 2023
Sadegh Kamaei received the EPFL Microsystems & Microelectronics Doctoral Program 2023 Thesis Distinction for his dissertation titled “Energy-Efficient Electronic Functions through the Co-integration of 2D and Ferroelectric Materials.“ |
December 2021
Luca Capua presented his conference paper (co-authored by Yann Sprunger) titled ‘Double-Gate Si Nanowire FET Sensor Arrays For Label-Free C-Reactive Protein detection enabled by antibodies fragments and pseudo-super-Nernstian back-gate operation’ at IEDM 2021, in San Francisco. January 2021Clara Moldovan awarded the Musy award for entrepeneurship, supporting her to transfer the novel energy storage technology developed in Nanolab to address an essential market application today. She led the development of high density supercapacitors based on aligned carbon nanotubes structures, which due to their high surface area and to the device design and optimized processes can store very high energy levels, removing the performance gap between batteries and supercapacitors while charging ultra-fast, extending the lifetime and use environmentally friendly materials. This allows the resulting spin-off, Swistor, to offer a competitive energy storage solution. |
January 2021
Yogesh Chauhan 2021 IEEE Fellow. Piscataway, New Jersey, USA, January 2021: former member of Nanolab Yogesh Chauhan, from Kanpur, Uttar Pradesh, India, has been named an IEEE Fellow, being recognized for contributions to compact modeling of Si and GaN transistors. |
December 2020
Professor Adrian M. Ionescu appointed to Proceedings of IEEE Editorial Board. In its last meeting the IEEE Publication Services and Products Board fully endorsed the appointment of our lab director, professor Ionescu, as a member of the Editorial Board of the Proceedings of the IEEE, effective 1 January 2021 through 31 December 2023. The Proceedings of the IEEE is one of the most distinguished journals serving the engineering profession. It is the IEEE leading journal to provide in-depth review, survey, and tutorial coverage of the technical developments in electronics, electrical engineering, and computer science. |
August 2020
Luca Capua will hold an e-poster presentation on “Antibodies fragments as capturing sites to enhance cardiac troponin detection (cTn) in Extended Gate Metal-Oxide-Semiconductor Field Effect Transistors (EGFET)” at the ESC Congress 2020, Amsterdam, NL. |
July 2020
Matteo Cavalieri is giving a presentation on “Fabrication of ferroelectric Gd:HfO2 by pulsed laser deposition in a CMOS compatible process” at the IFCS-ISAF 2020, Keystone, CO, USA. |
May 2020
A paper written by Nicolò Oliva, “WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake” was published on Nature. The paper shows a p-type TFET co-integrated on the same flake with a p-type MOSFET in a WSe2/SnSe2 material system platform, which represents the new state-of-the-art in the field. |
