Control of Ge island coalescence for the formation of nanowires on silicon

S. P. Ramanandan; J. R. Sapera; A. Morelle; S. Marti-Sanchez; A. Rudra et al. 

Nanoscale Horizons. 2024-02-12. DOI : 10.1039/d3nh00573a.

Single site-controlled inverted pyramidal InGaAs QD-nanocavity operating at the onset of the strong coupling regime

J. Huang; W. Liu; X. Cheng; A. M. D. Miranda; B. Dwir et al. 

Journal Of Applied Physics. 2023-12-14. Vol. 134, num. 22, p. 223103. DOI : 10.1063/5.0175055.

Investigating the Effect of Crystal Morphology on Optoelectronic Properties of Zinc Phosphide Thin Films via Optical-pump Terahertz Probe Spectroscopy

Y. Huang; X. Liu; R. Paul; E. Z. Stutz; M. Zamani et al. 

2023-01-01. 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Montreal, CANADA, SEP 17-22, 2023. DOI : 10.1109/IRMMW-THz57677.2023.10299122.

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

A. Giunto; L. E. Webb; T. Hagger; A. Fontcuberta i Morral 

Physical Review Materials. 2023-07-17. Vol. 7, num. 7, p. 074605. DOI : 10.1103/PhysRevMaterials.7.074605.

The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

A. Hager; L. Gueniat; N. Morgan; S. P. Ramanandan; A. Rudra et al. 

Nanotechnology. 2023-10-30. Vol. 34, num. 44, p. 445301. DOI : 10.1088/1361-6528/acea87.

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

C. Huang; D. Dede; N. Morgan; V. Piazza; X. Hu et al. 

Nano Letters. 2023-07-04. Vol. 23, num. 14, p. 6284-6291. DOI : 10.1021/acs.nanolett.3c00281.

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

N. Morgan; V. G. Dubrovskii; A-K. Stief; D. Dede; M. Sangle-Ferriere et al. 

Crystal Growth & Design. 2023-06-12. DOI : 10.1021/acs.cgd.3c00316.

Carrier generation and collection in Zn3P2/InP heterojunction solar cells

R. Paul; S. W. Tabernig; J. R. Sapera; J. Hurni; A. Tiede et al. 

Solar Energy Materials And Solar Cells. 2023-04-29. Vol. 256, p. 112349. DOI : 10.1016/j.solmat.2023.112349.

Exciton-polariton dynamics of the single site-controlled quantum dot-nanocavity in the coexisting strong-weak coupling regime

J. Huang; W. Liu; M. C. Sarihan; X. Cheng; A. Miranda et al. 

New Journal Of Physics. 2023-03-01. Vol. 25, num. 3, p. 033015. DOI : 10.1088/1367-2630/acc26c.

The 2022 applied physics by pioneering women: a roadmap

B. Abad; K. Alberi; K. E. Ayers; S. Badhulika; C. Ban et al. 

Journal Of Physics D-Applied Physics. 2023-02-16. Vol. 56, num. 7, p. 073001. DOI : 10.1088/1361-6463/ac82f9.

Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films

R. Paul; V. Conti; M. Zamani; S. Escobar-Steinvall; H. Sanchez-Martin et al. 

Solar Energy Materials And Solar Cells. 2023-01-14. Vol. 252, p. 112194. DOI : 10.1016/j.solmat.2023.112194.

Understanding the growth mechanism of BaZrS3 chalcogenide perovskite thin films from sulfurized oxide precursors

S. P. Ramanandan; A. Giunto; E. Z. Stutz; B. Reynier; I. T. F. M. Lefevre et al. 

Journal Of Physics-Energy. 2023-01-01. Vol. 5, num. 1, p. 014013. DOI : 10.1088/2515-7655/aca9fe.

Monolithic InSb nanostructure photodetectors on Si using rapid melt growth

H. Menon; H. Jeddi; N. P. Morgan; A. F. i. Morral; H. Pettersson et al. 

Nanoscale Advances. 2023-01-18. Vol. 5, num. 4, p. 1152-1162. DOI : 10.1039/d2na00903j.

THz characterization of GeSn monocrystalline thin films

X. Liu; A. Giunto; J. D. Hutchinson; N. Humblot; D. Damry et al. 

2022-01-01. 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Delft, NETHERLANDS, Aug 28-Sep 02, 2022. DOI : 10.1109/IRMMW-THz50927.2022.9895959.

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

D. Dede; F. Glas; V. Piazza; N. Morgan; M. Friedl et al. 

Nanotechnology. 2022-11-26. Vol. 33, num. 48, p. 485604. DOI : 10.1088/1361-6528/ac88d9.

Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide

S. E. Steinvall; E. Z. Stutz; R. Paul; M. Zamani; J-B. Leran et al. 

Acs Applied Energy Materials. 2022-05-23. Vol. 5, num. 5, p. 5298-5306. DOI : 10.1021/acsaem.1c02484.

Generation of Human iPSC-Derived Neurons on Nanowire Arrays Featuring Varying Lengths, Pitches, and Diameters

J. Harberts; M. Siegmund; C. Hedrich; W. Kim; A. F. Morral et al. 

Advanced Materials Interfaces. 2022-07-24.  p. 2200806. DOI : 10.1002/admi.202200806.

Light emission properties of mechanical exfoliation induced extended defects in hexagonal boron nitride flakes

G. Ciampalini; C. Blaga; N. Tappy; S. Pezzini; K. Watanabe et al. 

2D Materials. 2022-07-01. Vol. 9, num. 3, p. 035018. DOI : 10.1088/2053-1583/ac6f09.

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

L. Gueniat; N. Tappy; A. Balgarkashi; T. Charvin; R. Lemerle et al. 

Acs Applied Nano Materials. 2022-04-22. Vol. 5, num. 4, p. 5508-5515. DOI : 10.1021/acsanm.2c00507.

Porous Nitride Light-Emitting Diodes

N. Amador-Mendez; T. Mathieu-Pennober; S. Vézian; M-P. Chauvat; M. Morales et al. 

ACS Photonics. 2022-03-09. Vol. 9, num. 4, p. 1256-1263. DOI : 10.1021/acsphotonics.1c01729.

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks

S. P. Ramanandan; P. Tomić; N. P. Morgan; A. Giunto; A. Rudra et al. 

Nano Letters. 2022-05-04. Vol. 22, num. 10, p. 4269-4275. DOI : 10.1021/acs.nanolett.2c00358.

Image shift correction, noise analysis, and model fitting of (cathodo-)luminescence hyperspectral maps

N. Tappy; A. F. i. Morral; C. Monachon 

Review Of Scientific Instruments. 2022-05-01. Vol. 93, num. 5, p. 053702. DOI : 10.1063/5.0080486.

Stoichiometry modulates the optoelectronic functionality of Zinc Phosphide (Zn3-xP2+x)

E. Z. Stutz; S. P. Ramanandan; M. Flór; R. Paul; M. Zamani et al. 

Faraday Discussions. 2022-04-11. DOI : 10.1039/D2FD00055E.

Boron quantification, concentration mapping and picosecond excitons dynamics in High-Pressure-High-Temperature diamond by cathodoluminescence

N. Tappy; P. Gallo; A. Fontcuberta i Morral; C. Monachon 

Carbon. 2022-05-01. Vol. 191, p. 48-54. DOI : 10.1016/j.carbon.2022.01.030.

GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays

L. Gueniat; L. Ghisalberti; L. Wang; C. Dais; N. Morgan et al. 

Nanoscale Horizons. 2022-01-06. DOI : 10.1039/d1nh00553g.

Excitonic absorption and defect-related emission in three-dimensional MoS2 pyramids

M. Negri; L. Francaviglia; D. Kaplan; V. Swaminathan; G. Salviati et al. 

Nanoscale. 2022. Vol. 14, num. 4, p. 1179-1186. DOI : 10.1039/d1nr06041d.

Showcasing the optical properties of monocrystalline zinc phosphide thin films as an earth-abundant photovoltaic absorber

E. Z. Stutz; M. Zamani; D. A. Damry; L. Buswell; R. Paul et al. 

Materials Advances. 2022. Vol. 3, num. 2, p. 1295-1303. DOI : 10.1039/D1MA00922B.

Raman tensor of zinc-phosphide (Zn3P2): from polarization measurements to simulation of Raman spectra

M. Flór; E. Z. Stutz; S. P. Ramanandan; M. Zamani; R. Paul et al. 

Physical Chemistry Chemical Physics. 2022. Vol. 24, num. 1, p. 63-72. DOI : 10.1039/D1CP04322F.

Rotated domains in selective area epitaxy grown Zn3P2: formation mechanism and functionality

M. Chiara Spadaro; S. E. Steinvall; N. Y. Dzade; S. Marti-Sanchez; P. Torres-Vila et al. 

Nanoscale. 2021-10-30. Vol. 13, num. 44, p. 18441-18450. DOI : 10.1039/d1nr06190a.

Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth

H. Menon; N. P. Morgan; C. Hetherington; R. Athle; M. Steer et al. 

Physica Status Solidi A-Applications And Materials Science. 2021-11-05.  p. 2100467. DOI : 10.1002/pssa.202100467.

Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2): Raman spectroscopy and magnetic properties

A. Kúkol’ová; M. Dimitrievska; A. P. Litvinchuk; S. P. Ramanandan; N. Tappy et al. 

CrystEngComm. 2021-08-20.  p. 1-12. DOI : 10.1039/D1CE00970B.

Promoting Persistent Superionic Conductivity in Sodium Monocarba-closo-dodecaborate NaCB11H12 via Confinement within Nanoporous Silica

M. S. Andersson; V. Stavila; A. Skripov; M. Dimitrievska; M. T. Psurek et al. 

Journal Of Physical Chemistry C. 2021-08-05. Vol. 125, num. 30, p. 16689-16699. DOI : 10.1021/acs.jpcc.1c03589.

Modeling the Shape Evolution of Selective Area Grown Zn3P2 Nanoislands

V. G. Dubrovskii; S. E. Steinvall; V. de Mestral; R. Paul; J-B. Leran et al. 

Crystal Growth & Design. 2021-08-04. Vol. 21, num. 8, p. 4732-4737. DOI : 10.1021/acs.cgd.1c00569.

Lamellar carbon-aluminosilicate nanocomposites with macroscopic orientation

D. Paripovic; L. Hartmann; H-G. Steinruck; A. Magerl; G. Li-Destri et al. 

Nanoscale. 2021-07-02. Vol. 13, num. 32, p. 13650-13657. DOI : 10.1039/d1nr00807b.

Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition

M. C. Giordano; S. Escobar Steinvall; S. Watanabe; A. Fontcuberta i Morral; D. Grundler 

Nanoscale. 2021-07-29. Vol. 13, num. 31, p. 13451-13462. DOI : 10.1039/d1nr02291a.

The Advantage of Nanowire Configuration in Band Structure Determination

M. Dimitrievska; F. Hage; S. R. Escobar Steinvall; A. Litvinchuk; E. Z. Stutz et al. 

Advanced Functional Materials. 2021-07-15.  p. 2105426. DOI : 10.1002/adfm.202105426.

The path towards 1 µm monocrystalline Zn3 P2 films on InP: substrate preparation, growth conditions and luminescence properties

M. Zamani; E. Z. Stutz; S. Escobar Steinvall; R. R. Zamani; R. Paul et al. 

Journal of Physics: Energy. 2021-04-22. Vol. 3, num. 3, p. 034011. DOI : 10.1088/2515-7655/abf723.

Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

V. G. Dubrovskii; W. Kim; V. Piazza; L. Güniat; A. Fontcuberta i Morral 

Nano Letters. 2021-04-15. Vol. 21, num. 7, p. 3139-3145. DOI : 10.1021/acs.nanolett.1c00349.

van der Waals Epitaxy of Co10–xZn10–yMnx+y Thin Films: Chemical Composition Engineering and Magnetic Properties

A. Kúkoĺová; S. Escobar Steinvall; R. Paul; J-B. Leran; P. Che et al. 

The Journal of Physical Chemistry C. 2021-04-26. Vol. 125, num. 17, p. 9391–9399. DOI : 10.1021/acs.jpcc.1c00452.

Optical properties and carrier dynamics in Co-doped ZnO nanorods

A. K. Sivan; A. Galan-Gonzalez; L. Di Mario; N. Tappy; J. Hernandez-Ferrer et al. 

Nanoscale Advances. 2021-01-07. Vol. 3, num. 1, p. 214-222. DOI : 10.1039/d0na00693a.

Optical properties and carrier dynamics in Co-doped ZnO nanorods (vol 3, pg 214, 2021)

A. K. Sivan; A. Galan-Gonzalez; L. Di Mario; N. Tappy; J. Hernandez-Ferrer et al. 

Nanoscale Advances. 2021-01-21. Vol. 3, num. 2, p. 618-618. DOI : 10.1039/d0na90065f.

Ag-doped As-S-Se chalcogenide glasses: a correlative study of structural and dielectrical properties

K. O. Cajko; M. Dimitrievska; D. L. Sekulic; D. M. Petrovic; S. R. Lukic-Petrovic 

Journal Of Materials Science-Materials In Electronics. 2021-02-08. Vol. 32, num. 5, p. 6688-6700. DOI : 10.1007/s10854-021-05384-w.

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

W. Kim; L. Güniat; A. Fontcuberta i Morral; V. Piazza 

Applied Physics Reviews. 2021-01-12. Vol. 8, num. 1, p. 011304. DOI : 10.1063/5.0031549.

Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning

S. Escobar Steinvall; E. Z. Stutz; R. Paul; M. Zamani; N. Y. Dzade et al. 

Nanoscale Advances. 2021. Vol. 3, p. 326-332. DOI : 10.1039/D0NA00841A.

Co-Sputtered Monocrystalline GeSn for Infrared Photodetection

A. Giunto; N. Humblot; L. Burnier; A. Krammer; A. Schuler et al. 

2020-08-06. 2020 IEEE Photonics Society Summer Topicals Meeting Series (SUM), Online conference, July 13-15, 2020. p. 1-2. DOI : 10.1109/SUM48678.2020.9161032.

Raman spectroscopy and lattice dynamics calculations of tetragonally-structured single crystal zinc phosphide (Zn3P2) nanowires

E. Z. Stutz; S. Escobar Steinvall; A. P. Litvinchuk; J-B. Leran; M. Zamani et al. 

Nanotechnology. 2020-12-01. Vol. 32, num. 8, p. 085704. DOI : 10.1088/1361-6528/abc91b.

Heterotwin Zn3P2 superlattice nanowires: the role of indium insertion in the superlattice formation mechanism and their optical properties

S. Escobar Steinvall; L. Ghisalberti; R. R. Zamani; N. Tappy; F. S. Hage et al. 

Nanoscale. 2020-10-22. Vol. 12, num. 44, p. 22534-22540. DOI : 10.1039/d0nr05852a.

Measuring the Optical Absorption of Single Nanowires

M. Y. Swinkels; A. Campo; D. Vakulov; W. Kim; L. Gagliano et al. 

Physical Review Applied. 2020-08-17. Vol. 14, p. 024045. DOI : 10.1103/PhysRevApplied.14.024045.

3D Ordering at the Liquid-Solid Polar Interface of Nanowires

M. Zamani; G. Imbalzano; N. Tappy; D. T. L. Alexander; S. Marti-Sanchez et al. 

Advanced Materials. 2020-08-06. Vol. 32, num. 38, p. 2001030. DOI : 10.1002/adma.202001030.

Time-resolved open-circuit conductive atomic force microscopy for direct electromechanical characterisation

Y. Calahorra; W. Kim; J. Vukajlovic-Plestina; A. Fontcuberta i Morral; S. Kar-Narayan 

Nanotechnology. 2020-10-02. Vol. 31, num. 40, p. 404003. DOI : 10.1088/1361-6528/ab9b4b.

Plasma-enhanced atomic layer deposition of nickel nanotubes with low resistivity and coherent magnetization dynamics for 3D spintronics

M. C. Giordano; K. Baumgaertl; S. Escobar Steinvall; J. Gay; M. Vuichard et al. 

ACS Applied Materials & Interfaces. 2020-08-12. Vol. 12, num. 36, p. 40443. DOI : 10.1021/acsami.0c06879.

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

A. Balgarkashi; S. P. Ramanandan; N. Tappy; M. Nahra; W. Kim et al. 

Journal of Optics. 2020-08-01. Vol. 22, num. 8, p. 084002. DOI : 10.1088/2040-8986/ab9aad.

In-situ reflectometry to monitor locally-catalyzed initiation and growth of nanowire assemblies

M. R. Braun; L. Gueniat; A. F. I. Morral; P. C. McIntyre 

Nanotechnology. 2020-08-14. Vol. 31, num. 33, p. 335703. DOI : 10.1088/1361-6528/ab8def.

Remote Doping of Scalable Nanowire Branches

M. Friedl; K. Cerveny; C. Huang; D. Dede; M. Samani et al. 

Nano Letters. 2020-05-13. Vol. 20, num. 5, p. 3577-3584. DOI : 10.1021/acs.nanolett.0c00517.

Formation, electronic structure, and optical properties of self-assembled quantum-dot single-photon emitters in Ga(N,As,P) nanowires

M. Jansson; L. Francaviglia; R. La; C. W. Tu; W. M. Chen et al. 

Physical Review Materials. 2020-05-15. Vol. 4, num. 5, p. 056005. DOI : 10.1103/PhysRevMaterials.4.056005.

van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics

R. Paul; N. Humblot; S. E. Steinvall; E. Z. Stutz; S. S. Joglekar et al. 

Crystal Growth & Design. 2020-04-22. Vol. 20, num. 6, p. 3816–3825. DOI : 10.1021/acs.cgd.0c00125.

Nanostructured alloys light the way to silicon-based photonics

A. Fontcuberta i Morral 

Nature. 2020-04-01. Vol. 580, num. 7802, p. 188-189. DOI : 10.1038/d41586-020-00976-8.

Efficient wavelength conversion of exchange magnons below 100 nm by magnetic coplanar waveguides

P. Che; K. Baumgaertl; A. Kúkol’ová; C. Dubs; D. Grundler 

Nature Communications. 2020-03-19. Vol. 11, num. 1, p. 1445. DOI : 10.1038/s41467-020-15265-1.

GaAs nanoscale membranes: prospects for seamless integration of III-Vs on silicon

A. M. Raya; M. Friedl; S. Marti-Sanchez; V. G. Dubrovskii; L. Francaviglia et al. 

Nanoscale. 2020-01-14. Vol. 12, num. 2, p. 815-824. DOI : 10.1039/c9nr08453c.

Rational strain engineering in delafossite oxides for highly efficient hydrogen evolution catalysis in acidic media

F. Podjaski; D. Weber; S. Zhang; L. Diehl; R. Eger et al. 

Nature Catalysis. 2020. Vol. 3, p. 55–63. DOI : 10.1038/s41929-019-0400-x.

Multiple morphologies and functionality of nanowires made from earth-abundant zinc phosphide

S. Escobar Steinvall; N. Tappy; M. Ghasemi; R. R. Zamani; T. LaGrange et al. 

Nanoscale Horizons. 2020. Vol. 5, num. 2, p. 274-282. DOI : 10.1039/C9NH00398C.

Unveiling Temperature-Dependent Scattering Mechanisms in Semiconductor Nanowires Using Optical-Pump Terahertz-Probe Spectroscopy

J. L. Boland; F. Amaduzzi; S. Sterzl; H. Potts; G. Tutuncuoglu et al. 

2019-01-01. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, FRANCE, Sep 01-06, 2019. DOI : 10.1109/IRMMW-THz.2019.8873897.

Crystal Phase Tuning in Planar Films of III-V Semiconductors

P. Staudiner; N. Tappy; S. Mauthe; K. Moselund; A. Fontcuberta i Morral et al. 

2019-01-01. Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019. DOI : 10.1109/ICIPRM.2019.8819144.

Quantitative Nanoscale Absorption Mapping: A Novel Technique To Probe Optical Absorption of Two-Dimensional Materials

M. Negri; L. Francaviglia; D. Dumcenco; M. Bosi; D. Kaplan et al. 

Nano Letters. 2019-12-24. Vol. 20, num. 1, p. 567-576. DOI : 10.1021/acs.nanolett.9b04304.

Semiconductor Nanowires: To Grow or Not to Grow?

P. McIntyre; A. Fontcuberta i Morral 

Materials Today Nano. 2019-10-14.  p. 100058. DOI : 10.1016/j.mtnano.2019.100058.

Does desorption affect the length distributions of nanowires?

V. G. Dubrovskii; J. Barcus; W. Kim; J. Vukajlovic-Plestina; A. Fontcuberta i Morral 

Nanotechnology. 2019-11-22. Vol. 30, num. 47, p. 475604. DOI : 10.1088/1361-6528/ab3bb6.

Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence

M. Jansson; L. Francaviglia; R. La; R. Balagula; J. E. Stehr et al. 

Nanotechnology. 2019-10-04. Vol. 30, num. 40, p. 405703. DOI : 10.1088/1361-6528/ab2cdb.

III–V Integration on Si(100): Vertical Nanospades

L. Güniat; S. Martí-Sánchez; O. Garcia; M. Boscardin; D. Vindice et al. 

ACS Nano. 2019-05-06. Vol. 13, num. 5, p. 5833–5840. DOI : 10.1021/acsnano.9b01546.

The Role of Polarity in Nonplanar Semiconductor Nanostructures

M. de la Mata; R. R. Zamani; S. Martí-Sánchez; M. Eickhoff; Q. Xiong et al. 

Nano Letters. 2019-05-05. Vol. 19, num. 6, p. 3396–3408. DOI : 10.1021/acs.nanolett.9b00459.

Segregation scheme of indium in AlGaInAs nanowire shells

L. Francaviglia; G. Tütüncüoglu; S. Martí-Sánchez; E. Di Russo; S. Escobar Steinvall et al. 

Physical Review Materials. 2019-02-13. Vol. 3, num. 2, p. 023001(R). DOI : 10.1103/PhysRevMaterials.3.023001.

Questioning liquid droplet stability on nanowire tips: from theory to experiment

L. Ghisalberti; H. Potts; M. Friedl; M. Zamani; L. Güniat et al. 

Nanotechnology. 2019-04-10. Vol. 30, num. 28, p. 285604. DOI : 10.1088/1361-6528/ab139c.

Thermodynamic re-assessment of the Zn–P binary system

M. Ghasemi; E. Stutz; S. Escobar Steinvall; M. Zamani; A. Fontcuberta i Morral 

Materialia. 2019-03-30. Vol. 6, p. 100301. DOI : 10.1016/j.mtla.2019.100301.

Growth of nanowire arrays from micron-feature templates

C. Jürgensen; D. Mikulik; W. Kim; L. Ghisalberti; G. Bernard et al. 

Nanotechnology. 2019-04-24. Vol. 30, num. 28, p. 285302. DOI : 10.1088/1361-6528/ab1699.

Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions

L. Güniat; P. Caroff; A. Fontcuberta i Morral 

Chemical Reviews. 2019-04-18. Vol. 119, num. 15, p. 8958-8971. DOI : 10.1021/acs.chemrev.8b00649.

Nanosails Showcasing Zn 3 As 2 as an Optoelectronic‐Grade Earth Abundant Semiconductor

E. Z. Stutz; M. Friedl; T. Burgess; H. H. Tan; P. Caroff et al. 

physica status solidi (RRL) – Rapid Research Letters. 2019-03-26.  p. 1900084. DOI : 10.1002/pssr.201900084.

Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

J. Vukajlovic-Plestina; W. Kim; L. Ghisalberti; G. Varnavides; G. Tuetuencuoglu et al. 

Nature Communications. 2019-02-20. Vol. 10, p. 869. DOI : 10.1038/s41467-019-08807-9.

Extraction of p-n junction properties and series resistance in GaAs nanowire-based solar cells using light concentration

D. Mikulik; M. Mintairov; I. Nachemson; V. Evstropov; P. Romero-Gomez et al. 

Nanotechnology. 2019-03-01. Vol. 30, num. 9, p. 094001. DOI : 10.1088/1361-6528/aaf67c.

Novel illumination strategy for lidar enabled by update in the laser product standards

S. T. Keller; F. Matteini; B. Penlae; L. Carrara 

Journal Of Laser Applications. 2018-02-01. Vol. 30, num. 1, p. 012011. DOI : 10.2351/1.5024300.

Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment

M. Albani; L. Ghisalberti; R. Bergamaschini; M. Friedl; M. Salvalaglio et al. 

Physical Review Materials. 2018-09-17. Vol. 2, num. 9, p. 093404. DOI : 10.1103/PhysRevMaterials.2.093404.

Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires

A. S. Sokolovskii; W. Kim; J. Vukajlovic-Plestina; G. Tutuncuoglu; L. Francaviglia et al. 

2018-01-01. International Conference on Laser Optics (ICLO), St Petersburg, RUSSIA, Jun 04-08, 2018. p. 412-412. DOI : 10.1109/LO.2018.8435260.

Dopant-Induced Modifications of GaxIn(1-x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)

N. Bologna; S. Wirths; L. Francaviglia; M. Campanini; H. Schmid et al. 

ACS Applied Materials & Interfaces. 2018-09-26. Vol. 10, num. 38, p. 32588-32596. DOI : 10.1021/acsami.8b10770.

Coherent Dynamics of Nanowire Force Sensors

F. Braakman; N. Rossi; D. Cadeddu; D. Vasyukov; G. Tutuncuoglu et al. 

2018-01-01. Conference on Precision Electromagnetic Measurements (CPEM), Paris, FRANCE, Jul 08-13, 2018. DOI : 10.1109/CPEM.2018.8501011.

Tuning adatom mobility and nanoscale segregation by twin formation and polytypism

L. Francaviglia; G. Tütüncüoglu; F. Matteini; A. F. i. Morral 

Nanotechnology. 2018-12-05. Vol. 30, num. 5, p. 054006. DOI : 10.1088/1361-6528/aaefdd.

The investigation of in situ removal of Si substrates for freestanding GaN crystals by HVPE

M. Lee; D. Mikulik; S. Park 

RSC ADVANCES. 2018. Vol. 8, num. 22, p. 12310-12314. DOI : 10.1039/c8ra01347k.

3-D structured PtJrGO-polyethyleneimine-functionalized MWCNTs prepared with different mass ratio of rGO and MWCNT for proton exchange membrane fuel cell

H. Yang; Y. Ko; W. Kim 

International Journal of Hydrogen Energy. 2018. Vol. 43, num. 9, p. 4439-4447. DOI : 10.1016/j.ijhydene.2017.12.135.

Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

M. Zamani; G. Tütüncüoglu; S. Martí-Sánchez; L. Francaviglia; L. Güniat et al. 

Nanoscale. 2018-09-04. Vol. 10, num. 36, p. 17080-17091. DOI : 10.1039/C8NR05787G.

Imaging Stray Magnetic Field of Individual Ferromagnetic Nanotubes

W. Kim; V. G. Dubrovskii; J. Vukajlovic-Plestina; G. Tütüncüoglu; L. Francaviglia et al. 

Nano Letters. 2018-01-02. Vol. 18, num. 2, p. 964-970. DOI : 10.1021/acs.nanolett.7b04386.

Observation of end-vortex nucleation in individual ferromagnetic nanotubes

A. Mehlin; B. Gross; M. Wyss; T. Schefer; G. Tütüncüoglu et al. 

Physical Review B. 2018. Vol. 97, num. 13, p. 134422. DOI : 10.1103/PhysRevB.97.134422.

Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots

L. Francaviglia; A. Giunto; W. Kim; P. Romero-Gomez; J. Vukajlovic-Plestina et al. 

Nano Letters. 2018-03-26. Vol. 18, num. 4, p. 2393-2401. DOI : 10.1021/acs.nanolett.7b05402.

Plasmonic Photodetectors

A. Dorodnyy; Y. Salamin; P. Ma; J. Vukajlovic Plestina; N. Lassaline et al. 

IEEE Journal of Selected Topics in Quantum Electronics. 2018-10-01. Vol. 24, num. 6, p. 1-13. DOI : 10.1109/JSTQE.2018.2840339.

Template-Assisted Scalable Nanowire Networks

M. Friedl; K. Cerveny; P. Weigele; G. Tütüncüoglu; S. Martí-Sánchez et al. 

Nano Letters. 2018-03-26. Vol. 18, num. 4, p. 2666-2671. DOI : 10.1021/acs.nanolett.8b00554.

Coherent Two-Mode Dynamics of a Nanowire Force Sensor

F. R. Braakman; N. Rossi; G. Tütüncüoglu; A. F. i. Morral; M. Poggio 

Physical Review Applied. 2018-02-02. Vol. 9, num. 5, p. 054045. DOI : 10.1103/PhysRevApplied.9.054045.

High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires

J. L. Boland; F. Amaduzzi; S. Sterzl; H. Potts; L. M. Herz et al. 

Nano Letters. 2018-05-02. Vol. 18, num. 6, p. 3703-3710. DOI : 10.1021/acs.nanolett.8b00842.

Surface Defect Passivation of Silicon Micropillars

D. Mikulik; A. C. Meng; R. Berrazouane; J. Stückelberger; P. Romero-Gomez et al. 

Advanced Materials Interfaces. 2018-08-15. Vol. 5, num. 20, p. 1800865. DOI : 10.1002/admi.201800865.

Photophysics behind highly luminescent two-dimensional hybrid perovskite (CH3(CH2)2NH3)2(CH3NH3)2Pb3Br10 thin films

D. Ramirez; J. I. Uribe; L. Francaviglia; P. Romero-Gomez; A. Fontcuberta i Morral et al. 

Journal of Materials Chemistry C. 2018-05-10. Vol. 6, num. 23, p. 6216-6221. DOI : 10.1039/C8TC01582A.

Bistability of Contact Angle and Its Role in Achieving Quantum-Thin Self-Assisted GaAs nanowires

W. Kim; V. G. Dubrovskii; J. Vukajlovic-Plestina; G. Tütüncüoglu; L. Francaviglia et al. 

Nano Letters. 2018. Vol. 18, num. 1, p. 49-57. DOI : 10.1021/acs.nanolett.7b03126.

Conductive-probe atomic force microscopy as a characterization tool for nanowire-based solar cells

D. Mikulik; M. Ricci; G. Tutuncuoglu; F. Matteini; J. Vukajlovic et al. 

Nano Energy. 2017. Vol. 41, p. 566-572. DOI : 10.1016/j.nanoen.2017.10.016.

Visual Understanding of Light Absorption and Waveguiding in Standing Nanowires with 3D Fluorescence Confocal Microscopy

R. Frederiksen; G. Tutuncuoglu; F. Matteini; K. L. Martinez; A. Fontcuberta I Morral et al. 

Acs Photonics. 2017. Vol. 4, num. 9, p. 2235-2241. DOI : 10.1021/acsphotonics.7b00434.

Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon

J. Vukajlovic-Plestina; W. Kim; V. G. Dubrovski; G. Tutuncuoglu; M. Lagier et al. 

Nano Letters. 2017. Vol. 17, num. 7, p. 4101-4108. DOI : 10.1021/acs.nanolett.7b00842.

Tilting Catalyst-Free InAs Nanowires by 3D-Twinning and Unusual Growth Directions

H. Potts; Y. Van Hees; G. Tutuncuoglu; M. Friedl; J-B. Leran et al. 

Crystal Growth & Design. 2017. Vol. 17, num. 7, p. 3596-3605. DOI : 10.1021/acs.cgd.7b00487.