LASPE is currently investigating group-III nitride (GaN, AlN, InN, and their alloys) wide-bandgap semiconductors for Photonics and Electronics:

Microcavities for Strong Coupling
Growth and physics of AlInN/(Al)GaN microcavities and waveguides for polariton physics and novel photonic devices such as polariton-based nonlinear emitters and novel photonic integrated circuits.


Quantum Dots and Nanostructures
Experimental study of wide-bandgap quantum wells and quantum dots aimed at cavity quantum electrodynamics in solid-state physics. Zero-dimensional structures for UV and visible optoelectronics including site-controlled dots.


Two- and One-dimensional Photonic Crystals 
Investigation of GaN on silicon two-dimensional and one-dimensional photonic crystal nanocavities and waveguides operating in the telecommunication bands (1.3 and 1.55 μm, passive structures) as well as in the visible range (high-β nanolasers).


Short-Wavelength Optoelectronics
Exploring new routes for short-wavelength optoelectronics: e.g., high reflectivity lattice-matched AlInN/(Al)GaN DBRs for VCSELs. High-frequency pulsed blue lasers, superluminescent light emitting diodes (SLEDs), and high power edge emitting blue laser diodes.


High Power Electronics
Growth and physics of AlInN/GaN 2D electron gas heterojunctions for high-electron mobility transistors.