European Community

  • 2004-2007 EU FP6 NITWAVE Nitride intersubband devices at telecommunication wavelengths  
  • 2005-2008 EU FP6 STIMSCAT Polariton lasers and amplifiers
  • 2005-2008 EU-FP6 ULTRAGAN InAlN/InGaN Heterostructure Technology for Ultra-high Power Transistor  
  • 2008-2011 EU-FP7 MORGAN Materials for Robust Gallium Nitride                                                                                      

  • 2008-2011 EU-FP7 RAINBOW High quality material and intrinsic properties of InN and In rich nitride alloys   

  • 2009-2013 EU-FP7 CLERMONT4 Exciton-polaritons in microcavities: physics and devices
  • 2016-2019 EU-H2020 SUPERTWIN All Solid-State Super-Twinning Photon Microscope
  • 2017-2019 EU-H2020 MSCA-IF Heat Transport and its Effects on the Perf. of Nanostruct., Photonic Materials                            









Swiss National Science Foundation

  • 2004-2006 SNF III-V Nitride Microcavities for Strong Coupling
  • 2005-2009 SNF-NCCR Quantum PhotonicsNitride based light emitters                                                                         

  • 2005-2007 SNF Growth and physical properties of AlInN/GaN heterostructures 

  • 2006-2008 SNF III-V nitride microcavities  

  • 2008-2010 SNF Light matter interaction in III-V Nitride Microcavities and Nanostructures                                       

  • 2009-2010 SNF R’Equip GaN based Semiconductor heterostructures/MOVPE reactor                                     

  • 2011-2013 SNF Light-matter interaction in GaN semiconductor cavities  

  • 2013-2015 SNF Light-matter interaction in III-V nitride semiconductor cavities and waveguides

  • 2015-2017 SNF-DACH Advanced GaN based quantum devices

  • 2015-2018 SNF (Al,Ga,In)N/GaN heterostructures for high frequency, high power, and high temperature         

  • 2015-2018 SNF III-V nitride photonics

  • 2018-2022 SNF GaN Nanophotonics

  • 2018-2019 SNF R’Equip III-nitride based single-photon emitters in the telecom range