Publications

2024

Investigation of room-temperature single-photon emitters in GaN-based materials and GaN/AlN quantum dots

J. N. Stachurski / N. Grandjean (Dir.)  

Lausanne, EPFL, 2024. 

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Y. Chen / N. Grandjean (Dir.)  

Lausanne, EPFL, 2024. 

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

P. C. Lottigier / N. Grandjean (Dir.)  

Lausanne, EPFL, 2024. 

Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography

K. Ji; M. Schnedler; Q. Lan; F. Zheng; Y. Wang et al. 

Applied Physics Express. 2024-01-01. Vol. 17, num. 1, p. 016505. DOI : 10.35848/1882-0786/ad163d.

2023

Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry

M. Elhajhasan; W. Seemann; K. Dudde; D. Vaske; G. Callsen et al. 

Physical Review B. 2023-12-29. Vol. 108, num. 23, p. 235313. DOI : 10.1103/PhysRevB.108.235313.

Dynamical nuclear polarization for dissipation-induced entanglement in NV centers

S. Khandelwal; S. Kumar; N. Palazzo; G. Haack; M. S. Chipaux 

Physical Review B. 2023-11-13. Vol. 108, num. 17, p. 174418. DOI : 10.1103/PhysRevB.108.174418.

Optically detected magnetic resonance with an open source platform

H. Babashah; H. Shirzad; E. Losero; V. Goblot; C. Galland et al. 

Scipost Physics Core. 2023-10-01. Vol. 6, num. 4, p. 065. DOI : 10.21468/SciPostPhysCore.6.4.065.

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities

P. Lottigier; D. M. Di Paola; D. T. L. Alexander; T. F. K. Weatherley; P. S. d. S. M. Modrono et al. 

Nanomaterials. 2023-09-01. Vol. 13, num. 18, p. 2569. DOI : 10.3390/nano13182569.

Optimizing Data Processing for Nanodiamond Based Relaxometry

T. A. Vedelaar; T. H. Hamoh; F. P. P. Martinez; M. Chipaux; R. Schirhagl 

Advanced Quantum Technologies. 2023-07-05.  p. 2300109. DOI : 10.1002/qute.202300109.

Fast, Broad-Band Magnetic Resonance Spectroscopy with Diamond Widefield Relaxometry

C. Mignon; A. R. O. Moreno; H. Shirzad; S. K. Padamati; V. G. Damle et al. 

Acs Sensors. 2023-04-12. DOI : 10.1021/acssensors.2c02809.

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

T. F. K. Weatherley / N. Grandjean (Dir.)  

Lausanne, EPFL, 2023. 

Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells

A. Delphan; M. N. Makhonin; T. Isoniemi; P. M. Walker; M. S. Skolnick et al. 

Apl Photonics. 2023-02-01. Vol. 8, num. 2, p. 021302. DOI : 10.1063/5.0132170.

Detecting the metabolism of individual yeast mutant strain cells when aged, stressed or treated with antioxidants with diamond magnetometry

A. Morita; A. C. Nusantara; A. Myzk; F. P. P. Martinez; T. Hamoh et al. 

Nano Today. 2023-02-01. Vol. 48, p. 101704. DOI : 10.1016/j.nantod.2022.101704.

2022

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

N. Roccato; F. Piva; C. De Santi; M. Buffolo; C. Haller et al. 

Microelectronics Reliability. 2022-11-01. Vol. 138, p. 114724. DOI : 10.1016/j.microrel.2022.114724.

Diamond-Based Nanoscale Quantum Relaxometry for Sensing Free Radical Production in Cells

A. Sigaeva; H. Shirzad; F. P. Martinez; A. C. Nusantara; N. Mougios et al. 

Small. 2022-09-28. DOI : 10.1002/smll.202105750.

Single-Particle Tracking and Trajectory Analysis of Fluorescent Nanodiamonds in Cell-Free Environment and Live Cells

A. Sigaeva; A. Hochstetter; S. Bouyim; M. Chipaux; M. Stejfova et al. 

Small. 2022-08-29.  p. 2201395. DOI : 10.1002/smll.202201395.

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

M. Buffolo; N. Roccato; F. Piva; C. De Santi; R. Brescancin et al. 

2022-01-01. Conference on Light-Emitting Devices, Materials, and Applications XXVI at SPIE Photonics WEST OPTO Conference, ELECTR NETWORK, Jan 22-Feb 28, 2022. p. 120220G. DOI : 10.1117/12.2606599.

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

N. Roccato; F. Piva; C. De Santi; R. Brescancin; K. Mukherjee et al. 

2022-01-01. Conference on Gallium Nitride Materials and Devices XVII at SPIE OPTO Conference, ELECTR NETWORK, Jan 22-Feb 28, 2022. p. 1200105. DOI : 10.1117/12.2606560.

Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

J. Stachurski; S. Tamariz; G. Callsen; R. Butte; N. Grandjean 

Light-Science & Applications. 2022-04-28. Vol. 11, num. 1, p. 114. DOI : 10.1038/s41377-022-00799-4.

Quantum Sensing of Free Radicals in Primary Human Dendritic Cells

L. Nie; A. C. Nusantara; V. G. Damle; M. V. Baranov; M. Chipaux et al. 

Nano Letters. 2022. Vol. 22, num. 4, p. 1818–1825. DOI : 10.1021/acs.nanolett.1c03021.

2021

Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

N. Roccato; F. Piva; C. De Santi; M. Buffolo; C. Haller et al. 

Journal Of Physics D-Applied Physics. 2021-12-16. Vol. 54, num. 50, p. 505108. DOI : 10.1088/1361-6463/ac2693.

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

N. Roccato; F. Piva; C. De Santi; R. Brescancin; K. Mukherjee et al. 

Journal Of Physics D-Applied Physics. 2021-10-21. Vol. 54, num. 42, p. 425105. DOI : 10.1088/1361-6463/ac16fd.

Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature

D. M. Di Paola; P. M. Walker; R. P. A. Emmanuele; A. V. Yulin; J. Ciers et al. 

Nature Communications. 2021-06-09. Vol. 12, num. 1, p. 3504. DOI : 10.1038/s41467-021-23635-6.

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

T. F. K. Weatherley; W. Liu; V. Osokin; D. T. L. Alexander; R. A. Taylor et al. 

Nano Letters. 2021-06-23. Vol. 21, num. 12, p. 5217-5224. DOI : 10.1021/acs.nanolett.1c01295.

Quantum monitoring of cellular metabolic activities in single mitochondria

L. Nie; A. C. Nusantara; V. G. Damle; R. Sharmin; E. P. P. Evans et al. 

Science Advances. 2021-05-01. Vol. 7, num. 21, p. eabf0573. DOI : 10.1126/sciadv.abf0573.

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

P. Sohi; Carlin; M. D. Rossell; R. Erni; N. Grandjean et al. 

Semiconductor Science And Technology. 2021-05-01. Vol. 36, num. 5, p. 055020. DOI : 10.1088/1361-6641/abf3a7.

Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

M. Hrytsaienko; M. Gallart; M. Ziegler; O. Cregut; S. Tamariz et al. 

Journal Of Applied Physics. 2021-02-07. Vol. 129, num. 5, p. 054301. DOI : 10.1063/5.0038733.

Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

F. Piva; C. De Santi; A. Caria; C. Haller; J. F. Carlin et al. 

Journal Of Physics D-Applied Physics. 2021-01-14. Vol. 54, num. 2, p. 025108. DOI : 10.1088/1361-6463/abb727.

Smooth GaN membranes by polarization-assisted electrochemical etching

J. Ciers; M. A. Bergmann; F. Hjort; Carlin; N. Grandjean et al. 

Applied Physics Letters. 2021-02-08. Vol. 118, num. 6, p. 062107. DOI : 10.1063/5.0034898.

Evidence of the entanglement constraint on wave-particle duality using the IBM Q quantum computer

N. Schwaller; M-A. Dupertuis; C. Javerzac-Galy 

Physical Review A. 2021-02-09. Vol. 103, num. 2, p. 022409. DOI : 10.1103/PhysRevA.103.022409.

Interaction of Confined Polaritons in Microcavity Structures

M. Navadeh Toupchi / M. Portella Oberli; D. Oberli (Dir.)  

Lausanne, EPFL, 2021. 

2020

Dimensioning a full color LED microdisplay for augmented reality headset in a very bright environment

E. Quesnel; A. Lagrange; M. Vigier; M. Consonni; M. Tournaire et al. 

Journal Of The Society For Information Display. 2020-04-01. Vol. 29, num. 1, p. 3-16. DOI : 10.1002/jsid.884.

Efficient second harmonic generation in a doubly resonant photonic crystal cavity based on a bound state in the continuum

J. Wang; M. Clementi; A. Barone; M. Minicoy; J-F. Carlin et al. 

2020-01-01. IEEE Photonics Conference (IPC), ELECTR NETWORK, Sep 28-Oct 01, 2020. DOI : 10.1109/IPC47351.2020.9252325.

Nanodiamond Relaxometry-Based Detection of Free-Radical Species When Produced in Chemical Reactions in Biologically Relevant Conditions

F. P. Martinez; A. C. Nusantara; M. Chipaux; S. K. Padamati; R. Schirhagl 

Acs Sensors. 2020-12-24. Vol. 5, num. 12, p. 3862-3869. DOI : 10.1021/acssensors.0c01037.

Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces

Y. Wang; M. Schnedler; Q. Lan; F. Zheng; L. Freter et al. 

Physical Review B. 2020-12-21. Vol. 102, num. 24, p. 245304. DOI : 10.1103/PhysRevB.102.245304.

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

L. Freter; Y. Wang; M. Schnedler; J. -F. Carlin; R. Butte et al. 

Journal Of Applied Physics. 2020-11-14. Vol. 128, num. 18, p. 185701. DOI : 10.1063/5.0020652.

Combined synchrotron x-ray diffraction and NV diamond magnetic microscopy measurements at high pressure

L. Toraille; A. Hilberer; T. Plisson; M. Lesik; M. Chipaux et al. 

New Journal Of Physics. 2020-10-01. Vol. 22, num. 10, p. 103063. DOI : 10.1088/1367-2630/abc28f.

Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides

J. Ciers; D. D. Solnyshkov; G. Callsen; Y. Kuang; Carlin et al. 

Physical Review B. 2020-10-19. Vol. 102, num. 15, p. 155304. DOI : 10.1103/PhysRevB.102.155304.

Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

A. Y. Polyakov; C. Haller; R. Butte; N. B. Smirnov; L. A. Alexanyan et al. 

Journal Of Alloys And Compounds. 2020-12-10. Vol. 845, p. 156269. DOI : 10.1016/j.jallcom.2020.156269.

Doubly resonant second-harmonic generation of a vortex beam from a bound state in the continuum

J. Wang; M. Clementi; M. Minkov; A. Barone; J-F. Carlin et al. 

Optica. 2020-09-03. Vol. 7, num. 9, p. 1126. DOI : 10.1364/OPTICA.396408.

Localized Photon Lasing in a Polaritonic Lattice Landscape

M. Navadeh-Toupchi; F. Jabeen; D. Y. Oberli; M. T. Portella-Oberli 

Physical Review Applied. 2020-08-19. Vol. 14, num. 2, p. 024055. DOI : 10.1103/PhysRevApplied.14.024055.

Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

A. Y. Polyakov; C. Haller; R. Butte; N. B. Smirnov; L. A. Alexanyan et al. 

Journal Of Physics D-Applied Physics. 2020-10-28. Vol. 53, num. 44, p. 445111. DOI : 10.1088/1361-6463/aba6b7.

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

S. Tamariz; G. Callsen; J. Stachurski; K. Shojiki; R. Butte et al. 

Acs Photonics. 2020-06-17. Vol. 7, num. 6, p. 1515-1522. DOI : 10.1021/acsphotonics.0c00310.

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

W. Liu; C. Haller; Y. Chen; T. Weatherley; J. -F. Carlin et al. 

Applied Physics Letters. 2020-06-01. Vol. 116, num. 22, p. 222106. DOI : 10.1063/5.0004321.

III-nitride photonic cavities

R. Butte; N. Grandjean 

Nanophotonics. 2020-03-01. Vol. 9, num. 3, p. 569-598. DOI : 10.1515/nanoph-2019-0442.

2019

Efficient Quantum Algorithms for GHZ and W States, and Implementation on the IBM Quantum Computer

D. Cruz; R. Fournier; F. Gremion; A. Jeannerot; K. Komagata et al. 

Advanced Quantum Technologies. 2019-06-01. Vol. 2, num. 5-6, p. 1900015. DOI : 10.1002/qute.201900015.

Room temperature single photon emission from planar GaN/AlN quantum dot samples grown by MBE

G. Callsen; S. Tamariz; N. Grandjean 

2019-01-01. Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019. DOI : 10.1109/ICIPRM.2019.8819364.

Probing alloy formation using different excitonic species: The particular case of InGaN

G. Callsen; R. Butte; N. Grandjean 

2019-01-01. Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019. DOI : 10.1109/ICIPRM.2019.8819178.

Anderson localisation in steady states of microcavity polaritons

T. J. Sturges; M. D. Anderson; A. Buraczewski; M. Navadeh-Toupchi; A. F. Adiyatullin et al. 

Scientific Reports. 2019-12-18. Vol. 9, p. 19396. DOI : 10.1038/s41598-019-55673-y.

Broadened Bandwidth Amplified Spontaneous Emission from Blue GaN-Based Short-Cavity Superluminescent Light-Emitting Diodes

H. Zhang; C-W. Shih; D. Martin; A. Caut; J-F. Carlin et al. 

Ecs Journal Of Solid State Science And Technology. 2019-12-16. Vol. 9, num. 1, p. 015019. DOI : 10.1149/2.0432001JSS.

Impact of alloy disorder on Auger recombination in single InGaN/GaN core-shell microrods

W. Liu; G. Rossbach; A. Avramescu; T. Schimpke; H. -J. Lugauer et al. 

Physical Review B. 2019-12-04. Vol. 100, num. 23, p. 235301. DOI : 10.1103/PhysRevB.100.235301.

Gas pressure measurement device

I. Rousseau; P. Sohi 

US2021231512; EP3791170; WO2019215610.

2019.

Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes

C. Haller / N. Grandjean (Dir.)  

Lausanne, EPFL, 2019. 

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

A. Y. Polyakov; C. Haller; N. B. Smirnov; A. S. Shiko; I. V. Shchemerov et al. 

Journal Of Applied Physics. 2019-09-28. Vol. 126, num. 12, p. 125708. DOI : 10.1063/1.5122314.

Ultrafast carrier dynamics in III-nitride nanostructures and LED quantum efficiency

W. Liu / N. Grandjean; G. J. Jacopin (Dir.)  

Lausanne, EPFL, 2019. 

Probing Alloy Formation Using Different Excitonic Species: The Particular Case of InGaN

G. Callsen; R. Butte; N. Grandjean 

Physical Review X. 2019-08-21. Vol. 9, num. 3, p. 031030. DOI : 10.1103/PhysRevX.9.031030.

Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases

P. Sohi / N. Grandjean (Dir.)  

Lausanne, EPFL, 2019. 

Short cavity InGaN-based laser diodes with cavity length below 300 mu m

H. Zhang; C-W. Shih; D. Martin; A. Caut; J-F. Carlin et al. 

Semiconductor Science And Technology. 2019-08-01. Vol. 34, num. 8, p. 085005. DOI : 10.1088/1361-6641/ab2c2f.

GaN Quantum Dots for Room Temperature Excitonic Physics

S. P. Tamariz Kaufmann / N. Grandjean (Dir.)  

Lausanne, EPFL, 2019. 

Electroluminescence of Single InGaN/GaN Micropyramids

A. V. Babichev; D. V. Denisov; P. Lavenus; G. Jacopin; M. Tchernycheva et al. 

Optics And Spectroscopy. 2019-02-01. Vol. 126, num. 2, p. 118-123. DOI : 10.1134/S0030400X19020036.

Density control of GaN quantum dots on AlN single crystal

S. Tamariz; G. Callsen; N. Grandjean 

Applied Physics Letters. 2019-02-25. Vol. 114, num. 8, p. 082101. DOI : 10.1063/1.5083018.

InAlN underlaver for near ultraviolet InGaN based light emitting diodes

C. Haller; J-F. Carlin; M. Mosca; M. D. Rossell; R. Erni et al. 

Applied Physics Express. 2019-03-01. Vol. 12, num. 3, p. 034002. DOI : 10.7567/1882-0786/ab0147.

Polaritonic Cross Feshbach Resonance

M. Navadeh-Toupchi; N. Takemura; M. D. Anderson; D. Y. Oberli; M. T. Portella-Oberli 

Physical Review Letters. 2019-01-31. Vol. 122, num. 4, p. 047402. DOI : 10.1103/PhysRevLett.122.047402.

Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

P. Sohi; M. Mosca; Y. Chen; J-F. Carlin; N. Grandjean 

Semiconductor Science And Technology. 2019-01-01. Vol. 34, num. 1, p. 015002. DOI : 10.1088/1361-6641/aaed6e.

2018

Insights about the Absence of Rb Cation from the 3D Perovskite Lattice: Effect on the Structural, Morphological, and Photophysical Properties and Photovoltaic Performance

R. Uchida; S. Binet; N. Arora; G. Jacopin; M. H. Alotaibi et al. 

Small. 2018-09-06. Vol. 14, num. 36, p. 1802033. DOI : 10.1002/smll.201802033.

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

C. Haller; J. -F. Carlin; G. Jacopin; W. Liu; D. Martin et al. 

Applied Physics Letters. 2018-09-10. Vol. 113, num. 11, p. 111106. DOI : 10.1063/1.5048010.

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

R. Butte; L. Lahourcade; T. Uzdavinys; G. Callsen; M. Mensi et al. 

Applied Physics Letters. 2018. Vol. 112, num. 3, p. 032106. DOI : 10.1063/1.5010879.

Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

I. Rousseau; G. Callsen; G. Jacopin; J. Carlin; R. Butte et al. 

Journal of Applied Physics. 2018. Vol. 123, num. 11, p. 113103. DOI : 10.1063/1.5022150.

Impact of surface morphology on the properties of light emission in InGaN epilayers

T. Uzdavinys; S. Marcinkevicius; M. Mensi; L. Lahourcade; J. Carlin et al. 

APPLIED PHYSICS EXPRESS. 2018. Vol. 11, num. 5, p. 051004. DOI : 10.7567/APEX.11.051004.

Excited states of neutral donor bound excitons in GaN

G. Callsen; T. Kure; M. Wagner; R. Butte; N. Grandjean 

Journal of Applied Physics. 2018. Vol. 123, num. 21, p. 215702. DOI : 10.1063/1.5028370.

Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography

E. Di Russo; F. Moyon; N. Gogneau; L. Largeau; E. Giraud et al. 

JOURNAL OF PHYSICAL CHEMISTRY C. 2018. Vol. 122, num. 29, p. 16704-16714. DOI : 10.1021/acs.jpcc.8b03223.

Alloy disorder limited mobility of InGaN two-dimensional electron gas

P. Sohi; J. Carlin; N. Grandjean 

Applied Physics Letters. 2018. Vol. 112, num. 26, p. 262101. DOI : 10.1063/1.5030992.

A quantum optical study of thresholdless lasing features in high-beta nitride nanobeam cavities

S. Jagsch; N. Trivino; F. Lohof; G. Callsen; S. Kalinowski et al. 

Nature Communications. 2018. Vol. 9, p. 564. DOI : 10.1038/s41467-018-02999-2.

Light-Matter Interaction in III-Nitride Waveguides: Propagating Polaritons and Optical Gain

J. A. S. Ciers / N. Grandjean; R. Butté (Dir.)  

Lausanne, EPFL, 2018. 

III-Nitride Semiconductor Photonic Nanocavities on Silicon

I. M. Rousseau / N. Grandjean; R. Butté (Dir.)  

Lausanne, EPFL, 2018. 

Impact of Mode-Hopping Noise on InGaN Edge Emitting Laser Relative Intensity Noise Properties

A. Congar; K. Hussain; C. Pareige; R. Butte; N. Grandjean et al. 

IEEE Journal of Quantum Electronics. 2018. Vol. 54, num. 1, p. 1100107. DOI : 10.1109/Jqe.2017.2774358.

2017

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

C. Haller; J. -F. Carlin; G. Jacopin; D. Martin; R. Butte et al. 

Applied Physics Letters. 2017. Vol. 111, num. 26, p. 262101. DOI : 10.1063/1.5007616.

AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range

S. Tamariz; D. Martin; N. Grandjean 

Journal Of Crystal Growth. 2017. Vol. 476, p. 58-63. DOI : 10.1016/j.jcrysgro.2017.08.006.

Multilayer porous structures on GaN for the fabrication of Bragg reflectors

T. Braniste; E. Monaico; D. Martin; J-F. Carlin; V. Popa et al. 

2017. Conference on Nanotechnology VIII, Barcelona, SPAIN, MAY 08-09, 2017. p. 102480R. DOI : 10.1117/12.2266280.

Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

P. Sohi; D. Martin; N. Grandjean 

Semiconductor Science And Technology. 2017. Vol. 32, num. 7, p. 075010. DOI : 10.1088/1361-6641/aa7248.

Determining the nature of excitonic dephasing in high-quality GaN/AlGaN quantum wells through time-resolved and spectrally resolved four-wave mixing spectroscopy

M. Gallart; M. Ziegler; O. Cregut; E. Feltin; J. -F. Carlin et al. 

Physical Review B. 2017. Vol. 96, num. 4, p. 041303. DOI : 10.1103/PhysRevB.96.041303.

Method for labeling products with a transparent photoluminescent label, and transparent photoluminescent label

N. Hefyene; N. Grandjean 

KR102595036; US11298968; CN108699672; US2020369069; US10752043; JP6622910; JP2019501035; CN108699672; EP3380642; US2018257421; KR20180085712; TWI596226; TW201718919; WO2017089857.

2017.

Thin-Wall GaN/InAlN Multiple Quantum Well Tubes

C. Durand; J-F. Carlin; C. Bougerol; B. Gayral; D. Salomon et al. 

Nano Letters. 2017. Vol. 17, num. 6, p. 3347-3355. DOI : 10.1021/acs.nanolett.6b04852.

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

M. Shahmohammadi; W. Liu; G. Rossbach; L. Lahourcade; A. Dussaigne et al. 

Physical Review B. 2017. Vol. 95, num. 12, p. 125314. DOI : 10.1103/PhysRevB.95.125314.

Quantification of scattering loss of III-nitride photonic crystal cavities in the blue spectral range

I. Rousseau; I. Sanchez-Arribas; K. Shojiki; J-F. Carlin; R. Butte et al. 

Physical Review B. 2017. Vol. 95, num. 12, p. 125313. DOI : 10.1103/PhysRevB.95.125313.

Propagating Polaritons in III-Nitride Slab Waveguides

J. Ciers; J. G. Roch; J. -F. Carlin; G. Jacopin; R. Butte et al. 

Physical Review Applied. 2017. Vol. 7, num. 3, p. 034019. DOI : 10.1103/PhysRevApplied.7.034019.

Light-emitting diode technology and applications: introduction

M. Krames; N. Grandjean 

Photonics Research. 2017. Vol. 5, num. 2, p. LED1-LED2. DOI : 10.1364/Prj.5.00Led1.

Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

M. S. Mohamed; A. Simbula; J-F. Carlin; M. Minkov; D. Gerace et al. 

APL Photonics. 2017. Vol. 2, num. 3, p. 031301. DOI : 10.1063/1.4974311.

Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

T. Braniste; J. Ciers; E. Monaico; D. Martin; J. -F. Carlin et al. 

Superlattices And Microstructures. 2017. Vol. 102, p. 221-234. DOI : 10.1016/j.spmi.2016.12.041.

Fermi-level pinning and intrinsic surface states of Al1-xInxNd(10(1)over-bar0) surfaces

V. Portz; M. Schnedler; L. Lymperakis; J. Neugebauer; H. Eisele et al. 

Applied Physics Letters. 2017. Vol. 110, num. 2, p. 022104. DOI : 10.1063/1.4973765.

2016

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

H. Okumura; D. Martin; N. Grandjean 

Applied Physics Letters. 2016. Vol. 109, num. 25, p. 252101. DOI : 10.1063/1.4972408.

Thresholdless Lasing of Nitride Nanobeam Cavities on Silicon

S. T. Jagsch; N. V. Trivino; G. Callsen; S. Kalinowski; I. M. Rousseau et al. 

2016. 25th International Semiconductor Laser Conference (ISLC), Kobe, JAPAN, SEP 12-15, 2016.

Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN

L. Lugani; M. A. Py; J. -F. Carlin; N. Grandjean 

Applied Physics Letters. 2016. Vol. 109, num. 15, p. 152102. DOI : 10.1063/1.4964466.

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells

W. Liu; R. Butte; A. Dussaigne; N. Grandjean; B. Deveaud et al. 

Physical Review B. 2016. Vol. 94, num. 19, p. 195411. DOI : 10.1103/PhysRevB.94.195411.

Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures

G. R. Mutta; S. Carapezi; A. Vilalta-Clemente; N. A. K. Kauffman; N. Grandjean et al. 

Materials Science In Semiconductor Processing. 2016. Vol. 55, p. 12-18. DOI : 10.1016/j.mssp.2016.03.017.

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

E. C. Young; N. Grandjean; T. E. Mates; J. S. Speck 

Applied Physics Letters. 2016. Vol. 109, num. 21, p. 212103. DOI : 10.1063/1.4968586.

Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures

V. Portz; M. Schnedler; M. Duchamp; F. -M. Hsiao; H. Eisele et al. 

Applied Physics Letters. 2016. Vol. 109, num. 13, p. 132102. DOI : 10.1063/1.4963184.

Room-Temperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum Wells

F. Fedichkin; T. Guillet; P. Valvin; B. Jouault; C. Brimont et al. 

Physical Review Applied. 2016. Vol. 6, num. 1, p. 014011. DOI : 10.1103/PhysRevApplied.6.014011.

Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence

W. Liu; J. -F. Carlin; N. Grandjean; B. Deveaud; G. Jacopin 

Applied Physics Letters. 2016. Vol. 109, num. 4, p. 042101. DOI : 10.1063/1.4959832.

W-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

D. Marti; L. Lugani; J-F. Carlin; M. Malinverni; N. Grandjean et al. 

Ieee Electron Device Letters. 2016. Vol. 37, num. 8, p. 1025-1028. DOI : 10.1109/Led.2016.2581301.