Publications

Quantum Computing with Semiconductor Spin

S. P. Ramanandan; A. Fontcuberta i Morral 

Single‐Crystalline Lateral p ‐SnS/ n ‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

P. Sutter; V. Piazza; P. Ghimire; A. Fontcuberta i Morral; E. Sutter 

Flash Lamp Annealing Enables Dislocation Density Reduction and Probing of Defect Dynamics in Epitaxial Germanium for On‑Chip Integration

A. Giunto; J. René Sapera; S. Ben-David; T. Hagger; V. Boureau et al. 

Single Photon Emitters in Thin GaAsN Nanowire Tubes Grown on Si

N. Denis; A. S. Sharma; D. Dede; T. Nurmamytov; S. Cianci et al. 

Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy

S. P. Ramanandan; A. Morelle; M. Masseroni; S. Ben-David; S. Marti-Sanchez et al. 

Thermal Rectification in Telescopic Nanowires: Impact of Thermal Boundary Resistance

Y. Kaur; S. Tachikawa; M. Y. Swinkels; M. López-Suárez; M. Camponovo et al. 

Engineering GaAs nanostructures for heterointegration with 2D transition metal dichalcogenides

On-chip Germanium nanowires for hole spin qubits

Light and Carrier Management in Emerging Zn3P2 – based solar cells: A Numerical Simulation Approach

M. Micali; R. F. Lemerle; A. Tiede; A. Fontcuberta i Morral; E. Alarcón Lladó 

Defects in Ge and GeSn and their impact on optoelectronic properties

A. Giunto; A. Fontcuberta i Morral 

Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires

K. Peng; N. P. Morgan; F. M. Wagner; T. Siday; C. Q. Xia et al. 

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

M. Zendrini; V. Dubrovskii; A. Rudra; D. Dede; A. Fontcuberta i Morral et al. 

Unveiling the complex phonon nature and phonon cascades in 1L to 5L WSe2 using multiwavelength excitation Raman scattering

C. V. Blaga; Á. Labord Álvarez; A. Balgarkas; M. Banerjee; A. Fontcuberta i Morral et al. 

Control of Ge island coalescence for the formation of nanowires on silicon

S. P. Ramanandan; J. R. Sapera; A. Morelle; S. Marti-Sanchez; A. Rudra et al. 

Towards Quantitative Terahertz Characterisation of Zinc Phosphide Thin Films for Photovoltaic Applications

Y. Huang; X. Liu; R. Paul; E. Z. Stutz; M. Zamani et al. 

Scalable Receivers Based on Horizontally-grown InAs Nanowires Promise All-fiber Terahertz Spectrometer Systems

K. Peng; N. Morgan; F. Wagner; T. Siday; C. Xia et al. 

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Scalable Approaches to III-V Nanowires for Photodetection

The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

A. Hager; L. Gueniat; N. Morgan; S. P. Ramanandan; A. Rudra et al. 

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

A. Giunto; L. E. Webb; T. Hagger; A. Fontcuberta i Morral