Publications

2026

Journal Articles

Evidence of the non-radiative character of dislocations in V-pit-free InGaN/GaN quantum wells

A. Toschi; A. Schwab; G. Ganeeva; Y. Chen; C. Haller et al. 

Journal of Applied Physics. 2026. Vol. 139, num. 7. DOI : 10.1063/5.0308314.

Deep Learning-assisted Tracking of Bubble Dynamics for Elucidating Oxygen Evolution Reaction on Nickel Electrodes

D. Ashizawa; D. Kurosu; M. Itatani; N. Oyamada; D. Sato et al. 

JOURNAL OF ELECTROANALYTICAL CHEMISTRY. 2026. Vol. 1003. DOI : 10.1016/j.jelechem.2025.119760.

Sputtered AlN Buffer Layer for Low-Loss Crystalline AlN-on-Sapphire Integrated Photonics

S. Brunetta; S. Sbarra; B. S. Y. Loke; J-F. Carlin; N. Grandjean et al. 

ACS Photonics. 2026. DOI : 10.1021/acsphotonics.5c02661.

2025

Journal Articles

Three-octave Supercontinuum Generation in Thick Crystalline Aluminum Nitride Waveguides

S. Sbarra; S. Brunetta; P. A. Demongodin; J. -F. Carlin; N. Grandjean et al. 

OPTICS LETTERS. 2025. Vol. 50, num. 22, p. 7147 – 7150. DOI : 10.1364/OL.577343.

Homogeneous Free-Standing Nanostructures from Bulk Diamond over Millimeter Scales for Quantum Technologies

A. Corazza; S. Ruffieux; Y. Zhu; C. A. Jaramillo Concha; Y. Fontana et al. 

Nano Letters. 2025. DOI : 10.1021/acs.nanolett.5c03083.

Interlayer Coupling and Exciton Dynamics in Two-dimensional Hybrid Structures Based on an (in, Ga)n Quantum Well Coupled to a Mose2 Monolayer

D. Chen; D. Lagarde; L. Hemmen; L. Lombez; P. Renucci et al. 

PHYSICAL REVIEW APPLIED. 2025. Vol. 24, num. 3. DOI : 10.1103/xmk4-zy5q.

Plasmonic Nanoparticle‐on‐Nanoslit Antenna as Independently Tunable Dual‐Resonant Systems for Efficient Frequency Upconversion

H. Hu; Z. Hu; C. Galland; W. Chen 

Advanced Optical Materials. 2025. DOI : 10.1002/adom.202501674.

VN-VIn divacancies as the origin of non-radiative recombination centers in InGaN quantum wells

A. Toschi; Y. Chen; J-F. Carlin; R. Butte; N. Grandjean 

APL MATERIALS. 2025. Vol. 13, num. 3. DOI : 10.1063/5.0256650.

Giant Purcell Broadening and Lamb Shift for DNA-Assembled Near-Infrared Quantum Emitters

S. Verlekar; M. Sanz-Paz; M. Zapata-Herrera; M. Pilo-Pais; K. Kołątaj et al. 

ACS Nano. 2025. DOI : 10.1021/acsnano.4c09829.

Quantifying carbon site switching dynamics in GaN by electron holography

K. Ji; M. Schnedler; Q. Lan; J. F. Carlin; R. Butté et al. 

Physical Review Research. 2025. Vol. 7, num. 1, p. 013200. DOI : 10.1103/PhysRevResearch.7.013200.

Photon antibunching in single-molecule vibrational sum-frequency generation

F. M. Kalarde; F. Ciccarello; C. S. Muñoz; J. Feist; C. Galland 

Nanophotonics. 2025. Vol. 14, num. 1, p. 59 – 73. DOI : 10.1515/nanoph-2024-0469.

Conference Papers

Monolayer-Thick GaN/AlN Quantum Well Anodes and Far-UVC Field Emission Device at 226 nm

D. Boiko; P. Demolon; J-F. Carlin; E. Eriksson; A. Hoogerwerf et al. 

2025. 2025 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, Munich, Germany, 2025-06-23 – 2025-06-27. DOI : 10.1109/cleo/europe-eqec65582.2025.11110195.

Multi-octave bandwidth supercontinuum generation in crystalline Aluminum Nitride-on-sapphire waveguides

S. Sbarra; S. Brunetta; J. F. Carlin; N. Grandjean; R. Butté et al. 

2025. 24th Nonlinear Frequency Generation and Conversion (2025), San Francisco, United States, 2025-01-28 – 2025-01-31. DOI : 10.1117/12.3043189.

On the influence of the buffer layer on the optical quality of AlN-on-sapphire epilayers for photonic integrated devices

S. Brunetta; S. Sbarra; J. F. Carlin; N. Grandjean; C. S. Brès et al. 

2025. 29 Integrated Optics: Devices, Materials, and Technologies, San Francisco, California, United States, 2025-01-27 – 2025-01-30. DOI : 10.1117/12.3041202.

Extending the Supercontinuum Spectrum in Fully Etched Thick Aluminum Nitride Waveguides

S. Sbarra; S. Brunetta; J. F. Carlin; N. Grandjean; R. Butté et al. 

2025. 2025 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, Munich, Germany, 2025-06-23 – 2025-06-27. DOI : 10.1109/CLEO/EUROPE-EQEC65582.2025.11110287.

Defects in InGaN QW Structures: Microscopic Properties and Modeling

M. Meneghini; M. Nicoletto; F. Piva; N. Roccato; A. Caria et al. 

2025. 29 Light-Emitting Devices, Materials, and Applications, San Francisco, California, United States, 2025-01-27 – 2025-01-29. DOI : 10.1117/12.3038351.

Theses

Optical properties of 2D-material/III-nitride van der Waals heterostructures

D. Chen / N. Grandjean (Dir.)  

Lausanne, EPFL, 2025. 

Book Chapters

Micro- and nanofabrication techniques for single crystal diamond photonics

N. Quack; C. Galland; E. Losero 

Nanophotonics with Diamond and Silicon Carbide for Quantum Technologies; Elsevier, 2025. p. 27 – 45.

Working Papers

A Microfluidic Platform for Whole-Membrane Integrity Profiling in Live Neuronal Cells

C. Guiducci; T. J. Ryser; A. Krichene; N. Marchi; F. R. Espinal et al. 

2025

2024

Journal Articles

Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs

N. Roccato; F. Piva; M. Buffolo; C. D. Santi; N. Trivellin et al. 

Journal of Physics D : Applied Physics. 2024. Vol. 57, num. 47, p. 475102. DOI : 10.1088/1361-6463/ad7039.