EPiX Facilities

EPiX, as the EPFL Epitaxy Core Facility offers access and provides trainings to the following equipment:

  • For III-nitride semiconductors: one Aixtron Aix 200 horizontal MOVPE reactor, one Aixtron closed coupled showerhead MOVPE reactor and one Riber MBE reactor 

  • For III-V (arsenides/phosphides) and GeSi semiconductors: Aixtron Aix200/4 dual chamber MOVPE reactor

  • For ZnP alloys: one Veeco MBE reactor

  • A High Resolution Brucker D80 Discovery X-ray Diffractometer

  • C-V and Hall effect set-ups

Recent publications based on epitaxial layers from EPiX

A Design Methodology for Correlated Disorder in Nanophotonic Structures with Application to Thin-Film Photovoltaic Absorbers

A. Tiede / A. Fontcuberta i Morral; E. Alarcon Llado (Dir.)  

Lausanne, EPFL, 2026. 

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Y. Chen / N. Grandjean (Dir.)  

Lausanne, EPFL, 2024. 

Subpicosecond thermalization of carriers in polar GaN/AlN quantum dots

M. Hrytsaienko; D. O. Siebadji Tchuimeni; M. Ziegler; O. Crégut; G. Schmidt et al. 

Journal of Applied Physics. 2026. Vol. 139, num. 8. DOI : 10.1063/5.0309975.