EPiX briefly

The EPiX platform offers training and access to the following equipments:

  • For III-nitrides semiconductor alloys: two MOVPE reactors (Aixtron Aix200 horizontal chamber reactor and Aixtron CCS shower-head reactor);

  • For III-V (arsenides/phosphides) and GeSi semiconductor alloys: a dual chamber Aixtron Aix200/4 MOVPE reactor;

  • For ZnP alloys: one MBE reactor (Veeco);

  • A High Resolution X-ray Diffractometer (Brucker D80 Discovery);

  • C-V and Hall effect measurement set-ups.

Interested in our services of epitaxial layer deposition or eager to become an independent grower in our facility ?

Our epitaxial growth laboratories

Recent publications based on our epitaxial materials

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

H. Okumura; D. Martin; M. Malinverni; N. Grandjean 

Applied Physics Letters. 2016. Vol. 108, num. 7, p. 072102. DOI : 10.1063/1.4942369.

Engineering GaAs nanostructures for heterointegration with 2D transition metal dichalcogenides

M. Zendrini / A. Fontcuberta i Morral; V. Piazza (Dir.)  

Lausanne, EPFL, 2025. 

GaN Surface Passivation by MoS2 Coating

D. Chen; J. Jiang; T. F. K. Weatherley; J-F. Carlin; M. Banerjee et al. 

Nano Letters. 2024. Vol. 24, num. 33, p. 10124 – 10130. DOI : 10.1021/acs.nanolett.4c02259.