About our III-V MOVPE dual chamber reactor
Group III
TMGa – Trimethylgallium (CH3)3Ga
TEGa – Triethylgallium (C2H5)3Ga
TMAl – Trimethylaluminium (CH3)3Al
TMIn – Trimethylindium (CH3)3In
TEIn – Triethylindium (C2H5)3In
CBr4 – Carbon tetrabromide
DEZn – Diethylzinc (C2H5)2Zn
Group IV
IBGe – Isobutylgermane C4H12Ge
Group V
Arsine – AsH3
Phosphine – PH3
DMHy – Dimethylhydrazine C2H8N2
TBAs – Tetriarybutylarsine (CH3)3CAsH2
Grown on GaAs substrates
(Al)GaAs
(In)GaAs
Grown on InP substrates
(Al,In)(Ga,As)
(Al,Ga,In)(As,P)
Grown on Si substrates
Ge,SiGe
2” 3×2” 3” 4”
