III-N MBE

RIBER compact 21 reactor

-Gallium
-Indium
-Aluminum
-Silicon (dopant)
-Magnesium (dopant)

-Ammonia

-Nitrogen Plasma

  • 3”
  • 2” (1/2 and 1/4 of 2”)
  • 10×10 mm2 square wafer
  • custom sizes available on request 

Our system is dedicated for GaN, AlN, InGaN, and AlGaN growth, using NH3 as V-element precursor, or N2-plasma

Research carried out on our III-Nitrides MBE system

Ready to help you with MBE !