About our II-V MBE reactor
Ge
Sn
Zn
In
GaP – (Only P is sent in the molecular beam)
Au – (coming soon)
1/2 – 1x 2” wafer
1-5x 10x10mm square wafer
Recent PhD work based on MBE-grown materials
Selective-Area Deposition of Indium and Its Plasmonic Properties
ACS Applied Optical Materials. 2025. DOI : 10.1021/acsaom.5c00373.Polarization-Sensitive Nanowire Terahertz Receivers: From Laboratory Research to Industry
2025. 2025 IEEE Photonics Conference (IPC), Singapore, Singapore, 2025-11-09 – 2025-11-13. p. 1 – 2. DOI : 10.1109/ipc65510.2025.11282030.Single Photon Emitters in Thin GaAsN Nanowire Tubes Grown on Si
ACS Nano. 2025. DOI : 10.1021/acsnano.5c12139.On-chip Germanium nanowires for hole spin qubits
Lausanne, EPFL, 2025.Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires
Nature communications. 2024. Vol. 15, num. 1. DOI : 10.1038/s41467-023-44345-1.Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices
ACS Applied Nano Materials. 2024. Vol. 7, num. 16, p. 19065 – 19074. DOI : 10.1021/acsanm.4c02765.Scalable Receivers Based on Horizontally-grown InAs Nanowires Promise All-fiber Terahertz Spectrometer Systems
2024. 49 International Conference on Infrared, Millimeter, and Terahertz Waves, Perth, Australia, 2024-09-01 – 2024-09-06. DOI : 10.1109/IRMMW-THz60956.2024.10697914.Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy
Lausanne, EPFL, 2024.Ready to help you with MBE !
Contact
Monday – Friday 8:00-17:00
Laboratory MXE 038