EPiX Facilities

EPiX, as the EPFL Epitaxy Core Facility offer access and provide trainings to the following equipment:

  • For III-nitride semiconductors: one Aixtron Aix 200 horizontal MOVPE reactor, one Aixtron closed coupled showerhead MOVPE reactor and one Riber MBE reactor 

  • For III-V (arsenides/phosphides) and GeSi semiconductors: Aixtron Aix200/4 dual chamber MOVPE reactor

  • For ZnP alloys: one Veeco MBE reactor

  • A High Resolution Brucker D80 Discovery X-ray Diffractometer

  • C-V and Hall effect set-ups

Recent publications based on epitaxial layers from EPiX

On-chip Germanium nanowires for hole spin qubits

S. P. Ramanandan / A. Fontcuberta i Morral (Dir.)  

Lausanne, EPFL, 2025. 

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Y. Chen / N. Grandjean (Dir.)  

Lausanne, EPFL, 2024. 

GaN Surface Passivation by MoS2 Coating

D. Chen; J. Jiang; T. F. K. Weatherley; J-F. Carlin; M. Banerjee et al. 

Nano Letters. 2024. Vol. 24, num. 33, p. 10124 – 10130. DOI : 10.1021/acs.nanolett.4c02259.