GaN MOVPE vertical reactor

Group III
TMGa – Trimethylgallium (CH₃)₃Ga
TEGa – Triethylgallium (C₂H₅)₃Ga
TMAl – Trimethylaluminium (CH₃)₃Al
TMIn – Trimethylindium (CH₃)₃In

Dopant sources:

Cp₂Mg – Magnesocene C₁₀H₁₀Mg

Silane – Siliciumtetrahydride SiH₄

Carrier gases:

H2    N2

Dedicated to low aluminium contents (Ga Al In)N alloys : GaN, AlGaN with Al < 30% , InGaN. Not suitable for AlInN.

3×2”    1×4”