The Science of Epitaxy

On-chip Germanium nanowires for hole spin qubits

Engineering GaAs nanostructures for heterointegration with 2D transition metal dichalcogenides

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Origin of giant enhancement of phase contrast in electron holography of modulation-doped n-type GaN

K. Ji; M. Schnedler; Q. Lan; J. F. Carlin; R. Butté et al. 

Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

F. Piva; C. De Santi; A. Caria; C. Haller; J. F. Carlin et al. 

Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

A. Y. Polyakov; C. Haller; R. Butte; N. B. Smirnov; L. A. Alexanyan et al. 

p-NiO/LiNiO-GaN heterojunctions: a potential alternative to p-GaN for advanced devices

Z. Hao; A. Floriduz; Y. Zong; U. Choi; M. Mensi et al. 

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

A. Floriduz; U. Choi; E. Matioli 

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

A. Floriduz; Z. Hao; E. Matioli 

Direct high-temperature MOCVD growth of GaN on foreign substrates