Flow boiling heat transfer in a lotus leaf-inspired microchannel heat sink with enhanced critical heat flux for large area chips

Z. Xin; W. Tang; S. Hong; Z. Wu 

Integrated Thermal Management for a High-Power-Density Silicon Carbide Power Module With Die-Level Heat Flux Over 1000 W/cm2

W. Tang; X. Huang; Z. Chen; K. Sheng; Z. Wu 

Dynamic Heterogeneous Multi-Agent Inverse Reinforcement Learning Based on Graph Attention Mean Field

L. Song; I. A. Channa; Z. Wang; G. Sun 

Charge dynamics in spacecraft polymers: Trap-modulated mechanisms from bulk accumulation to surface secondary electron emission

W-T. An; B-P. Song; F-Z. Zou; G-Y. Sun; Y-T. Liu et al. 

Verification of techniques for accelerated and stable SOLPS-ITER simulations including plasma drifts

M. Carpita; E. Tonello; C. Colandrea; O. Février; H. Reimerdes et al. 

Advanced IGBT Module Design for Enhanced Overcurrent Capability Using Phase Change Materials

Z. Lu; H. Gao; J. Yan; W. Tang; Z. Wu 

Design and 3D Printing of Ceramic Insulation for Surface Flashover Mitigation in Vacuum

C. Wang; Y. Yang; X. Shi; X. Yang; G. Sun et al. 

Porous Lightweight Polyimide Films with Ultra-High Surface Insulation Strength and Thermal Insulation for Space Solar Arrays

W-R. Li; X. Yang; G-Y. Sun; Y-C. Zhang; H-Y. Liu et al. 

Three-Dimensional Simulation-Based Comparison of Streamer Initiation in SF6/N2 and SF6/CO2 for Different Mixing Ratios and Pressures

M. F. Abbas; G. Sun; B. Guo; Y. Xin 

Thermal responses and flow instability of manifold ring-microchannel heat sink applied for periodic heat flow conditions

S. Hong; Z. Xin; Z. Wu; W. Tang 

Response to comment on “Global model for flashover phenomena in vacuum: A comprehensive perspective” [J. Appl. Phys. 137, 100901 (2025)]

G-J. Zhang; G-Y. Sun; B-P. Song; A. Neuber; Y. Yamano 

Numerical investigation of vacuum surface flashover triggered by inverted potential gradient on solar cells using particle-in-cell method

K. Li; H. LIU; G. Sun; Z. Sheng; C. Qi et al. 

Terahertz Electronic Metadevices: Principles behind the Ultra-high Cutoff Frequency

M. Rezaei; A. Esteghamat; E. Matioli 

2.7 Kv E-mode Multichannel Gan-on-si Based on P-type Nio/sio₂ Junction Tri-gate

A. Esteghamat; Z. Hao; M. Rezaei; W. El Huni; H. Cakmak et al. 

First-principle model of multipactor discharge considering realistic surface morphology: the role of microstructures

H. Y. Liu; G. Y. Sun; Y. L. Liu; C. C. Qi; S. Zhou et al. 

Trap State Modulation via Strong Electron-Withdrawing Groups for Enhanced Vacuum Surface Insulation of All-Organic Polyimide

C. Qi; X. Yang; J. Dong; G. Sun; W. Li et al. 

Neutral pressure measurement in TCV tokamak using ASDEX-type pressure gauges

G-Y. Sun; H. Reimerdes; H. Elaian; M. Baquero Ruiz; B. Brown et al. 

Low‐Power Tunable Micro‐Plasma Device for Efficient and Scalable CO₂ Valorization

B. Karakurt; H. Zhu; O. Soydal; G. Sun; J. S. Luterbacher et al. 

Dynamic Charge Transport Behavior of Double-layer Thin Film Materials Under Electron Beam Irradiation

W-T. An; B-P. Song; G-Y. Sun; X. Yang; K-H. Cao et al. 

p-NiO/LiNiO-GaN heterojunctions: a potential alternative to p-GaN for advanced devices

Z. Hao; A. Floriduz; Y. Zong; U. Choi; M. Mensi et al. 

Uniform and Efficient Embedded Microfluidic Cooling for High-Power-Density Power Modules

W. Tang; X. Huang; Z. Chen; K. Sheng; Z. Wu 

Safe-Operation-Area Extended IGBT Module With Enhanced Near-Junction Thermal Capacitance and Advanced Cooling for Transient High-Current Operation

X. Huang; Z. Chen; W. Tang; K. Sheng; Z. Wu 

Integration of Jet Impingement with Enhanced Pin Fin Structures for In-Chip Cooling of Power Electronics

I. O. Elhagali; H. Zhu; W. Tang; E. Matioli 

Investigation of Dynamic RON in p-GaN Gate HEMTs under Steady-State Soft-Switching: Roles of OFF-State Trapping and Hole Injections

H. Zhu; E. Matioli 

Efficient Chip-Integrated Microfluidic Cooling Through Jet-Enhanced Manifold Microchannels

W. Tang; H. Zhu; I. O. Elhagali; E. Matioli 

A review of advanced acoustic-chemical-optical partial discharge monitoring techniques for ultra-high-voltage gas-insulated equipment

X. Fan; W. Qin; R. Qiu; Y. Zang; W. Lu et al. 

A review of thermal management of batteries with a focus on immersion cooling

Z. Xin; W. Tang; W. Yao; Z. Wu 

Nanoplasma switch device for ultrafast switching

M. Samizadeh Nikooytabalvandani; E. Matioli 

Soft-Switching CO Hysteresis Losses in GaN HEMTs: A Resonant-Sawyer-Tower Measurement Method

H. Zhu; Y. Zong; Y. B. S. Al-Nuaimee; Y. S. Codjia; E. Matioli 

In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l

R. Van Erp; N. Perera; L. Nela; I. Osama Elhagali; H. Zhu et al. 

Numerical study on a new manifold ring-shaped microchannel structure for circular heat source with excellent temperature uniformity

Z. Xin; W. Tang; Z. Wu; Y. Wang; L. Luo et al. 

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

A. Floriduz; U. Choi; E. Matioli 

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

A. Floriduz; Z. Hao; E. Matioli 

Chip-Scale Watt-Range Terahertz Generation Based on Fast Transition in Nanoplasma Switches

M. Rezaei; E. Matioli; M. Rezaei; E. Matioli 

Direct high-temperature MOCVD growth of GaN on foreign substrates

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

H. Zhu; E. Matioli 

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

S. Bhadoria; F. Dijkhuizen; R. Raj; X. Wang; Q. Xu et al. 

Electronic metadevices for terahertz applications

M. S. Nikoo; E. Matioli 

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

E. Matioli; H. Zhu; N. Perera; M. S. Nikoo; A. Jafari et al. 

Measurement of WBG-based power supplies

H. Zhu; A. Jafari; K. Machtinger; M. Makoschitz; E. Matioli 

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

A. Floriduz; E. Matioli 

Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing

M. Samizadeh Nikoo; R. Soleiman; A. Krammer; G. Migliato Marega; Y. Park et al. 

Nanoplasma-based Millimiter-wave Modulators on a Single Metal Layer

M. Samizadeh Nikoo; M. O. Dilmaghanian; F. Farzaneh; E. Matioli 

A perspective on multi-channel technology for the next-generation of GaN power devices

L. Nela; M. Xiao; Y. Zhang; E. Matioli 

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

A. Floriduz; E. Matioli 

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

L. Nela; C. Erine; A. Miran Zadeh; E. Matioli 

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

T. Wang; Y. Zong; L. Nela; E. Matioli 

A Generalized Phase-Shift PWM Extension for Improved Natural and Active Balancing of Flying Capacitor Multilevel Inverters

G. Kampitsis; E. Batzelis; A. Kolokasis; E. Matioli; B. C. Pal 

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

L. Nela; C. Erine; E. Matioli 

Beyond 8 THz Displacement-field Nano-switches for 5G and 6G Communications

M. Samizadeh Nikoo; T. Wang; P. Sohi; M. Zhu; F. Qaderi et al. 

Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Hard-Switching Losses in Power FETs: The Role of Output Capacitance

N. Perera; A. Jafari; R. Soleiman; N. Bollier; S. G. Abeyratne et al. 

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

L. Nela; C. Erine; M. V. Oropallo; E. Matioli 

GaN-based power devices: Physics, reliability, and perspectives

M. Meneghini; C. De Santi; I. Abid; M. Buffolo; M. Cioni et al. 

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

L. Nela; R. F. P. van Erp; N. Perera; A. Jafari; C. Erine et al. 

Seed Dibbling Method for the Grow of High-Quality Diamond on GaN

R. Soleimanzadeh; M. Naamoun; A. Floriduz; R. A. Khadar; R. van Erp et al. 

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

L. Nela; N. Perera; C. Erine; E. Matioli 

p-NiO junction termination extensions for GaN power devices

R. A. Khadar; A. Floriduz; T. Wang; E. Matioli 

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

P. Sohi; Carlin; M. D. Rossell; R. Erni; N. Grandjean et al. 

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

R. Abdul Khadar; A. Floriduz; C. Liu; R. Soleimanzadeh; E. Matioli 

Multi-channel nanowire devices for efficient power conversion

L. Nela; J. Ma; C. Erine; P. Xiang; T. -H. Shen et al. 

Kilowatt-range Picosecond Switching Based on Microplasma Devices

M. Samizadeh Nikoo; A. Jafari; R. Van Erp; E. Matioli 

Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs

M. Samizadeh Nikoo; R. A. Khadar; A. Jafari; M. Zhu; E. Matioli 

Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies (vol 35, pg 12595, 2020)

A. Jafari; M. Samizadeh Nikoo; N. Perera; H. K. Yildirim; F. Karakaya et al. 

Parallel PV Configuration with Magnetic-Free Switched Capacitor Module-Level Converters for Partial Shading Conditions

G. Kampitsis; E. Batzelis; R. F. P. van Erp; E. Matioli 

Optimized kW-Range Boost Converter Based on Impulse Rectification with 52 kW/l and 98.6% Efficiency

A. Jafari; M. Samizadeh Nikoo; R. Van Erp; E. Matioli 

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

M. Zhu; C. Erine; J. Ma; M. S. Nikoo; L. Nela et al. 

Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters

N. Perera; R. van Erp; J. Ancay; A. Jafari; E. Matioli 

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

L. Nela; C. Erine; J. Ma; H. K. Yildirim; R. F. P. van Erp et al. 

Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

M. Samizadeh Nikoo; A. Jafari; N. Perera; H. K. Yildirim; E. Matioli 

Enhanced-DAB Converter: Comprehensive Design Evaluation

A. Jafari; M. Samizadeh Nikoo; F. Karakaya; E. Matioli 

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

T. Wang; M. S. Nikoo; L. Nela; E. Matioli 

p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices

R. A. Khadar; A. Floriduz; T. Wang; C. Erine; R. van Erp et al. 

Radio Frequency Temperature Transducers Based On Insulator-Metal Phase Transition In Vo2 And Ge-Doped Vo2 Ald Thin Films

A. A. Muller; R. Khadar; K. M. Niang; G. Bai; E. Matioli et al. 

Embedded Microchannel Cooling for Monolithically-integrated GaN Half-bridge ICs

R. van Erp; N. Perera; L. Nela; E. Matioli 

Microchannel-based Calorimeter for Rapid and Accurate Loss Measurements on High-efficiency Power Converters

R. van Erp; N. Perera; E. Matioli 

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

GaN vertical power devices on silicon substrates

Heterostructure design and field management in III-N high-electron mobility electronic devices

Diamond on GaN integration for power semiconductor devices with efficient thermal management

Pushing the Limits of Efficiency and Power Density in High-Frequency Power Conversion Based on Wide-Band-Gap Technologies

Integrated electronic device with embedded microchannels and a method for producing thereof

E. D. N. Matioli; R. F. P. Van Erp 

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

L. Nela; H. K. Yildirim; C. Erine; R. F. P. van Erp; P. Xiang et al. 

Fully Soft-Switched High Step-Up Nonisolated Three-Port DC-DC Converter Using GaN HEMTs

R. Faraji; H. Farzanehfard; G. Kampitsis; M. Mattavelli; E. Matioli et al. 

Co-designing electronics with microfluidics for more sustainable cooling

R. F. P. van Erp; R. Soleiman Zadeh Ardebili; L. Nela; G. Kampitsis; E. Matioli 

Co-designing electronics with microfluidics for more sustainable cooling

R. van Erp; R. Soleimanzadeh; L. Nela; G. Kampitsis; E. Matioli 

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes

L. Nela; R. F. P. van Erp; G. Kampitsis; H. K. Yildirim; J. Ma et al. 

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

N. Perera; G. Kampitsis; R. Van Erp; J. Ancay; A. Jafari et al. 

Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies

A. Jafari; M. Samizadeh; N. Perera; H. K. Yildirim; F. Karakaya et al. 

Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

N. Perera; M. Samizadeh Nikoo; A. Jafari; L. Nela; E. Matioli 

Efficient High Step-up Operation in Boost Converters Based on Impulse Rectification

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

Nanoplasma-enabled picosecond switches for ultrafast electronics

M. Samizadeh Nikoo; A. Jafari; N. Perera; M. Zhu; G. Santoruvo et al. 

Negative Resistance in Cascode Transistors

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

C. Erine; J. Ma; G. Santoruvo; E. Matioli 

Fast-switching Tri-Anode Schottky Barrier Diodes for monolithically integrated GaN-on-Si power circuits

L. Nela; G. kampitsis; J. Ma; E. Matioli 

High-Accuracy Calibration-Free Calorimeter for the Measurement of Low Power Losses

A. Jafari; M. Heijnemans; R. Soleiman Zadeh Ardebili; R. van Erp; M. Samizadeh Nikoo et al. 

Efficient Microchannel Cooling of Multiple Power Devices with Compact Flow Distribution for High Power-Density Converters

R. Van Erp; G. Kampitsis; E. Matioli 

Small-Signal Approach for Precise Evaluation of Gate Losses in Soft-Switched Wide-Band-Gap Transistors

A. Jafari; M. S. Nikoo; N. Perera; F. Karakaya; R. Soleimanzadeh et al. 

Calibration-Free Calorimeter for Sensitive Loss Measurements: Case of High-Frequency Inductors

A. Jafari; M. Heijnemans; R. Soleimanzadeh; R. van Erp; M. Samizadeh Nikoo et al. 

Output-Capacitance Hysteresis Losses of Field-Effect Transistors

N. Perera; A. Jafari; L. Nela; G. Kampitsis; M. S. Nikoo et al. 

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

R. F. P. van Erp; G. Kampitsis; L. Nela; R. Soleiman Zadeh Ardebili; E. Matioli 

Output Capacitance Losses in Wide-Band-Gap Transistors: A Small-Signal Modeling Approach

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs

M. Zhu; J. Ma; E. Matioli 

High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs

L. Nela; G. Kampitsis; h. yildirim; R. F. P. van Erp; J. Ma et al. 

Mixed Simulation-Experimental Optimization of a Modular Multilevel Switched Capacitors Converter Cell

G. Kampitsis; M. Chevron; R. van Erp; N. Perera; S. Papathanassiou et al. 

97.4%-Efficient All-GaN Dual-Active-Bridge Converter with High Step-up High-Frequency Matrix Transformer

A. Jafari; M. Samizadeh Nikoo; F. Karakya; N. Perera; E. Matioli 

Bringing the Heat Sink Closer to the Heat: Evaluating Die-embedded Microchannel Cooling of GaN-on-Si Power Devices

R. van Erp; G. Kampitsis; L. Nela; R. Soleimanzadeh; N. Perera et al. 

Analysis of Output Capacitance Co-Energy and Discharge Losses in Hard-Switched FETs

N. Perera; N. Bollier; E. Figini; R. Soleimanzadeh; R. van Erp et al. 

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires

G. Santoruvo; M. Samizadeh Nikoo; E. Matioli 

New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

R. Soleimanzadeh; M. Naamoun; R. A. Khadar; R. van Erp; E. Matioli 

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

R. Soleimanzadeh; R. A. Khadar; M. Naamoun; R. van Erp; E. Matioli 

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

M. Samizadeh Nikoo; A. Jafari; N. Perera; E. Matioli 

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

J. Ma; G. Santoruvo; L. Nela; T. Wang; E. Matioli 

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

M. Zhu; J. Ma; L. Nela; C. Erine; E. Matioli 

GaN Transistors for Miniaturized Pulsed-Power Sources

M. Samizadeh Nikoo; A. Jafari; E. Matioli 

On the Dynamic Performance of Laterally Gated Transistors

M. Samizadeh Nikoo; G. Santoruvo; C. Erine; A. Jafari; E. Matioli 

Enhanced transformation of sulfonamide antibiotics by manganese(IV) oxide in the presence of model humic constituents

Y. Song; J. Jiang; J. Ma; Y. Zhou; U. von Gunten 

On-Chip High-Voltage Sensors Based on Trap-Assisted 2DEG Channel Control

M. Samizadeh Nikoo; A. Jafari; E. Matioli 

High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal

L. Nela; M. Zhu; J. Ma; E. Matioli 

Fully-vertical GaN-on-Si power MOSFETs

R. A. Khadar; C. Liu; R. Soleimanzadeh; E. Matioli 

Enhanced DAB for Efficiency Preservation using Adjustable-Tap High-Frequency Transformer

A. Jafari; M. Samizadeh Nikoo; F. Karakaya; E. Matioli 

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

J. Ma; C. Erine; M. Zhu; N. Luca; P. Xiang et al. 

High-performance normally-off tri-gate GaN power MOSFETs

M. Zhu; J. Ma; L. Nela; E. Matioli 

Ultra-High Power Density Magnetic-less DC/DC Converter Utilizing GaN Transistors

G. Kampitsis; R. v. Erp; E. Matioli 

A manifold microchannel heat sink for ultra-high power density liquid-cooled converters

R. van Erp; G. Kampitsis; E. Matioli 

High performance Fully-vertical GaN-on-Si power MOSFETs

R. M. A. Khadar; C. Liu; R. Soleimanzadeh; E. Matioli 

High-performance nanowire-based E-mode Power GaN MOSHEMTs

L. Nela; M. Zhu; J. Ma; E. Matioli 

Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide

T. Wang; L. Nela; J. Ma; E. Matioli 

Tri-gate technologies for high-performance power GaN devices

Multi-Channel Tri-gate GaN Power Schottky Diodes with Low ON-Resistance

J. Ma; G. Kampitsis; P. Xiang; K. Cheng; E. Matioli 

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

J. Ma; C. Erine; P. Xiang; K. Cheng; E. Matioli 

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

C. Liu; R. Abdul Khadar; E. Matioli 

GaN-on-Si Quasi-Vertical Power MOSFETs

C. Liu; R. Abdul Khadar; E. Matioli 

1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

T. Wang; J. Ma; E. Matioli 

820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2

R. A. Khadar; C. Liu; L. Zhang; P. Xiang; K. Cheng et al. 

Electromechanics of suspended spiral capacitors and inductors

S. Khorasani 

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

J. Ma; E. Matioli 

High Step-Up High-Frequency Zero-Voltage Switched GaN-Based Single-Stage Isolated DC-DC Converter for PV Integration and Future DC Grids

A. Jafari; E. Matioli 

645 V quasi-vertical GaN power transistors on silicon substrates

C. Liu; R. A. Khadar; E. Matioli 

Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain

J. Ma; E. Matioli 

Monolithic integration of GaN-based NMOS digital logic gate circuits with E-mode power GaN MOSHEMTs

M. Zhu; E. Matioli 

Semiconductor devices with multiple channels and three-dimensional electrodes

E. D. N. Matioli; J. Ma 

Semiconductor device comprising a three-dimensional field plate

E. D. N. Matioli; J. Ma 

Slanted Tri-gates for High-Voltage GaN Power Devices

J. Ma; E. Matioli 

In-Plane-Gate GaN Transistors for High-Power RF Applications

G. Santoruvo; E. Matioli 

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

J. Ma; E. Matioli 

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

J. Ma; M. Zhu; E. Matioli 

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-Off Voltage

J. Ma; D. C. Zanuz; E. Matioli 

High Performance Tri-gate GaN Power MOSHEMTs on Silicon Substrate

J. Ma; E. Matioli 

GaN-Based Nanowire Transistors

E. Matioli; B. Lu; D. Piedra; T. Palacios 

Internal Quantum Efficiency in Light-Emitting Diodes

E. Matioli; C. Weisbuch 

Compound Semiconductors Preface

T. Palacios; E. Matioli; R. Myers; S. Rajan; H. Wang 

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

J. Ma; G. Santoruvo; P. Tandon; E. Matioli 

Magneto-ballistic transport in GaN nanowires

G. Santoruvo; A. Allain; D. Ovchinnikov; E. Matioli 

Improved electrical and thermal performances in nanostructured GaN devices

J. Ma; E. Matioli 

Room-Temperature Ballistic Transport in III-Nitride Heterostructures

E. Matioli; T. Palacios 

Advanced power electronic devices based on Gallium Nitride (GaN)

D. Piedra; B. Lu; M. Sun; Y. Zhang; E. Matioli et al. 

Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure

E. Matioli; B. Lu; T. Palacios 

Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

J. Sakaguchi; T. Araki; T. Fujishima; E. Matioli; T. Palacios et al. 

Active Region Part A. Internal Quantum Efficiency in LEDs

E. Matioli; C. Weisbuch 

Nitride-based electron devices for high-power/high-frequency applications

Y. Cordier; T. Fujishima; B. Lu; E. Matioli; T. Palacios 

Tri-Gate Normally-Off GaN Power MISFET

B. Lu; E. Matioli; T. Palacios 

High-brightness polarized light-emitting diodes

E. Matioli; S. Brinkley; K. M. Kelchner; Y-L. Hu; S. Nakamura et al. 

Low Leakage Normally-off Tri-gate GaN MISFET

B. Lu; E. Matioli; T. Palacios 

High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

J. R. Lang; C. J. Neufeld; C. A. Hurni; S. C. Cruz; E. Matioli et al. 

High internal and external quantum efficiency InGaN/GaN solar cells

E. Matioli; C. Neufeld; M. Iza; S. C. Cruz; A. A. Al-Heji et al. 

Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals

E. Matioli; S. Brinkley; K. M. Kelchner; S. Nakamura; S. Denbaars et al. 

Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes

E. Rangel; E. Matioli; Y-S. Choi; C. Weisbuch; J. S. Speck et al. 

Direct measurement of internal quantum efficiency in light emitting diodes under electrical injection

E. Matioli; C. Weisbuch 

YAG:Ce nanoparticle based converter layer for white LEDs

A. Revaux; G. Dantelle; S. Brinkley; E. Matioli; C. Weisbuch et al. 

Impact of the Vertical Layer Structure on the Emission Directionality of Thin-Film InGaN Photonic Crystal LEDs

E. Rangel; E. Matioli; H-T. Chen; C. Weisbuch; J. S. Speck et al. 

High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals

E. Matioli; E. Rangel; M. Iza; B. Fleury; N. Pfaff et al. 

Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs

E. Matioli; C. Weisbuch 

CdSe Nanorods Dominate Photocurrent of Hybrid CdSe-P3HT Photovoltaic Cell

M. Schierhorn; S. W. Boettcher; J. H. Peet; E. Matioli; G. C. Bazan et al. 

High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes: Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals

E. Matioli; B. Fleury; E. Rangel; T. Melo; E. Hu et al. 

Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes

E. Rangel; E. Matioli; H-T. Chen; Y-S. Choi; C. Weisbuch et al. 

Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes

E. Matioli; B. Fleury; E. Rangel; E. Hu; J. Speck et al. 

Growth of embedded photonic crystals for GaN-based optoelectronic devices

E. Matioli; S. Keller; F. Wu; Y-S. Choi; E. Hu et al. 

Electroluminescent measurement of the internal quantum efficiency of light emitting diodes

A. Getty; E. Matioli; M. Iza; C. Weisbuch; J. S. Speck 

Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal

T. A. Truong; L. M. Campos; E. Matioli; I. Meinel; C. J. Hawker et al. 

GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization

E. Matioli; M. Iza; Y-S. Choi; F. Wu; S. Keller et al. 

Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes

K. Mcgroddy; A. David; E. Matioli; M. Iza; S. Nakamura et al. 

GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

A. David; B. Moran; K. Mcgroddy; E. Matioli; E. L. Hu et al. 

Submicron-thick microcavity InGaN light emitting diodes

Y. Choi; M. Iza; E. Matioli; G. Koblmuller; J. Speck et al. 

Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells

S. Keller; N. A. Fichtenbaum; C. Schaake; C. J. Neufeld; A. David et al. 

2.5 lambda microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process

Y-S. Choi; M. Iza; E. Matioli; G. Koblmueller; J. S. Speck et al. 

GaN light-emitting diodes with Archimedean lattice photonic crystals

A. David; T. Fujii; E. Matioli; R. Sharma; S. Nakamura et al. 

Omnidirectional light extraction in GaN LEDs using an Archimedean tiling photonic crystal

A. David; T. Fujii; E. Matioli; R. Sharma; S. Nakamura et al.