Description
PlasmaLab system 80 RIE (Reactive Ion Etching), made by Oxford Instruments is configured for general fluorine processes for etching of Si, SiO2, Si3N4 and other films (under staff permission). Machine is controlled by a PC2000 software.
Gold (Au) contamined and not microelectronic compatible
System Configuration
- Available gaz in the chamber:
- -Ar
-CF4
-O2
-CHF3
-SF6
-CH4 - Max flow rate per gaz: 100 sccm
- Wafer size: small piece of wafer until max full 8 inches wafer
- RF generator: 300 Watt 13.56MHz
- Table : only cooled down, no heating
- Typical process pressure: 30 – 100 mtorr
- Pumping system : corrosion-resistant turbo-molecular pump with rotary pump
- Quartz platen cover plate ( also available Carbon platen cover plate )