



Contents
I. Introduction ↑
The BAS 450 is a sputtering machine allowing the deposition of metallic or dielectric materials.
The tool is composed of one chamber with 3 magnetrons. The system allows the deposition of up to 2 metallic materials & 1 dielectric material without target change.
II . Equipement description ↑
Capability of the equipment
Thanks to its design, up to 9 x 100 mm wafers can be loaded in the system and coated at the same time.
Substrate holder
The substrate holder can be heated up to 300 °C maximum.
The substrate holder turns around targets at 4 to 24 rpm.
Pumping
Pumping in the system is achieved by:
- Primary pump : Rotary vane pump – Alcatel
- Secondary pump : Turbomolecular pump – Pfeiffer TMH 1600 – Pumping speed = 1600 m3h-1.
- Cold trap with liquid nitrogen Meissner to trap H20 molecules.
Pressure
The pressure in the system is measured by:
- Gauges Pirani (10-3 mbar): Primary vacuum control.
- 1 x Hot cathode gauge Bayard-Alpert IMG 060 B (10-1 à 10-6 mbar) : Secondary vacuum control .
- 1 x Cold cathode gauge Penning IKG 011 (5.10-3 à 10-10 mbar): Secondary vacuum control .
Typical vacuum level is: 6.10-6 mbar.
Gas
3 different gases are available:
- Ar [0-100 sccm]
- O2 [0-100 sccm]
- N2
Sources & Magnetron
Generators are :
- DC generator: Max. power 5 kW.
- RF generator: Max. power 2 kW @ 13,56 Mhz.
3 x Magnetrons : plane, rectangular (5″x 10″) water cooled ( Typical uniformity: ± 3% on 100 mm wafer)

- Chamber
- Shutter
- Substrate holder
- Centrale part of the chamber
- Substrates (100 mm wafers)
- Heater lamps ( 2 x 2 lamps)
- Rotatable lead-through
- Motor for substrate holder rotation
- RF source for the cleaning of samples (RF Etching)
- Target RF
- Magnetron
- RF source for sputtering
- Target DC
- Magnetron
- DC source
- …
- Throttle valve (3 positions)
- Turbomolecular pump
- Isolation valve (Primary pump / Secondary pump)
- By-Pass valve
- Primary pump
- Exhaust
- Gauge TPR2
- Gauge TPR1
- Cold cathode gauge IKG
- Gauge TPR3
- Hot cathode gauge
- Isolation valve for the membrane gauge
- Membrane gauge
- Isolation valve for Ar flow-meter
- Ar flow-meter
- Ar line
- Isolation valve for Ar flow-meter
- O2 flow-meter
- O2 line
- Cold trap
- Liquid Nitrogen IN
- Liquid Nitrogen OUT
III. How to use the system ↑

- Power box A
- Target n°1 DC
- Power box B
- Target n°2 RF
- Power box C
- Electrode for RF Etching
- Power box D
- Target n°3 DC
- Shutter : Closed part
- Shutter : Open part
- Substrates and substrate holder
- Lamps
- Selector for shutter position.
Box | A | B | C | D |
Target n°1 DC | Target n°2 RF | RF Etching | Target n°3 DC | |
AI | ||||
A | ||||
BI | ||||
B | ||||
CI | ||||
C | ||||
DI | ||||
D |
Open | 90 % Closed | Closed |
All the actions to operate the system are detailed in the user manual.
For details concerning precious material billing, see Processing fees page.