Balzers BAS 450

Contents

  1. Introduction
  2. Equipement description
  3. How to use the system

I. Introduction

The BAS 450 is a sputtering machine allowing the deposition of metallic or dielectric materials.

The tool is composed of one chamber with 3 magnetrons. The system allows the deposition of up to 2 metallic materials & 1 dielectric material without target change.

II . Equipement description

Capability of the equipment

Thanks to its design, up to 9 x 100 mm wafers can be loaded in the system and coated at the same time.

Substrate holder

The substrate holder can be heated up to 300 °C maximum.

The substrate holder turns around targets at 4 to 24 rpm.

Pumping

Pumping in the system is achieved by:

  • Primary pump : Rotary vane pump – Alcatel
  • Secondary pump : Turbomolecular pump – Pfeiffer TMH 1600 –  Pumping speed = 1600 m3h-1.
  • Cold trap with liquid nitrogen Meissner to trap H20 molecules.

Pressure

The pressure in the system is measured by:

  • Gauges Pirani (10-3 mbar): Primary vacuum control.
  • 1 x Hot cathode gauge Bayard-Alpert IMG 060 B (10-1 à 10-6 mbar) : Secondary vacuum control .
  • 1 x Cold cathode gauge Penning IKG 011 (5.10-3 à 10-10 mbar): Secondary vacuum control .

Typical vacuum level is: 6.10-6 mbar.

Gas

3 different gases are available:

  • Ar [0-100 sccm]
  • O2 [0-100 sccm]
  • N2

Sources & Magnetron

Generators are :

  • DC generator: Max. power 5 kW.
  • RF generator: Max. power 2 kW @ 13,56 Mhz.

3 x Magnetrons : plane, rectangular (5″x 10″) water cooled ( Typical uniformity: ± 3% on 100 mm wafer)

  1. Chamber
  2. Shutter
  3. Substrate holder
  4. Centrale part of the chamber
  5. Substrates (100 mm wafers)
  6. Heater lamps ( 2 x 2 lamps)
  7.  Rotatable lead-through
  8. Motor for substrate holder rotation
  9. RF source for the cleaning of samples (RF Etching)
  10. Target RF
  11. Magnetron
  12. RF source for sputtering
  13. Target DC
  14. Magnetron
  15. DC source
  16. Throttle valve (3 positions)
  17. Turbomolecular pump
  18. Isolation valve (Primary pump / Secondary pump)
  19. By-Pass valve
  20. Primary pump
  21. Exhaust
  22. Gauge TPR2
  23. Gauge TPR1
  24. Cold cathode gauge IKG
  25. Gauge TPR3
  26. Hot cathode gauge
  27. Isolation valve for the membrane gauge
  28. Membrane gauge
  29. Isolation valve for Ar flow-meter
  30. Ar flow-meter
  31. Ar line
  32. Isolation valve for Ar flow-meter
  33. O2 flow-meter
  34. O2 line
  35. Cold trap
  36. Liquid Nitrogen IN
  37. Liquid Nitrogen OUT

III. How to use the system

  1. Power box A
  2. Target n°1 DC 
  3. Power box B
  4. Target n°2 RF 
  5. Power box C
  6. Electrode for RF Etching
  7. Power box D
  8. Target n°3 DC
  9. Shutter : Closed part
  10. Shutter : Open part
  11. Substrates and substrate holder
  12. Lamps
  13. Selector for shutter position.
Box A B C D
  Target n°1 DC Target n°2 RF RF Etching Target n°3 DC
AI        
A        
BI        
B        
CI        
C        
DI        
D        
Open 90 % Closed Closed

All the actions to operate the system are detailed in the user manual. 

For details concerning precious material billing, see Processing fees page.