It is generally believed that the simple charge modulation employed in MOSFET electronics will not be sufficient for future electronic devices. Controlling and manipulating new degrees of freedom, like spin and orbits will play major role in the new generation of electronic materials like organic conductors, manganites, vanadates and cuprates. Therefore the understanding of the basic properties of such systems is primordial. Their engineering could have a significant impact on the electronics of the twenty first century and some of them are already present in new technologies.
It turns out that in most of these materials the electronic mean free path is very short, often even shorter than the lattice spacing. In other words, despite the metallic-like temperature dependence of the resistivity, strictly speaking they do not qualify for metals and they are very often called bad metals. Our goal is to investigate the bad metallicity by transport and magnetotransport studies in wide pressure (up to 20 GPa) and temperature (50 mK- 1000 K) ranges. The lattice compression can vary the electron-phonon coupling, the screening of the electron-electron interactions, alter the exchange interaction, suppress low-dimensional fluctuations, etc. We are confident that in some cases high pressures can tune the transition from a bad metal to a good metal (or from non-Fermi liquid to a Fermi liquid), thus contributing towards the understanding of this peculiar state. Our research in novel electronic materials is described in this general context.
Below we list few families of low-dimensional metals, which are the subject of our investigations.