STI – PhD position in THz electronic devices

POWERlab – EPFL  https://powerlab.epfl.ch

At the POWERlab, we develop novel semiconductor devices, including GaN and Diamond, based on a judicious device design to exploit their unique properties and conceive new, drastically more efficient devices that outperform the state-of-the-art. Our research is multidisciplinary at the interface of power electronic devices and converters, RF communications and thermal sciences.

We are looking for excellent and motivated candidates for a PhD in the field of THz electronic devices. The candidate will pursue novel ideas based on concepts of nanoplasma devices, metastructures and semiconductor concepts for RF to tackle the important challenge of THz gap. Below are some relevant references and a youtube video:

Nature 2020: https://www.nature.com/articles/s41586-020-2118-y

Youtube video: https://youtu.be/DKISJ4M_Tj0

The candidate will have the opportunity to work several aspects involved in demonstrating high-performance devices: device fabrication in cleanroom (relying on EPFL’s excellent cleanroom facilities), device simulations, device characterization (relying on the excellent facilities in the lab, for microfluidic, thermal and electrical measurements). Most importantly, the candidate is encouraged to try new ideas and approaches.

Profile: The candidate is expected to have a solid background in RF electronic devices or circuits, with strong aptitude for performing RF experiments, and building experiments. Experience with metastructures, plasmonics and/or RF electronic devices is very welcome.

What is offered: The selected candidate will be offered a fully-paid fellowship with very competitive salary and excellent conditions to excel in his/her research. https://www.epfl.ch/education/phd/doctoral-studies-structure/doctoral-students-salary/

Starting date: The ideal starting date would be as soon as possible.

How to apply: If you are interested, and have the correct profile for this position, please send your CV to [email protected], including publications (if any) and names of two references.